TW200746291A - Plasma processing apparatus and plasma processing method - Google Patents

Plasma processing apparatus and plasma processing method

Info

Publication number
TW200746291A
TW200746291A TW095131153A TW95131153A TW200746291A TW 200746291 A TW200746291 A TW 200746291A TW 095131153 A TW095131153 A TW 095131153A TW 95131153 A TW95131153 A TW 95131153A TW 200746291 A TW200746291 A TW 200746291A
Authority
TW
Taiwan
Prior art keywords
plasma processing
voltage
electrostatic chuck
processing substrate
chuck mechanism
Prior art date
Application number
TW095131153A
Other languages
English (en)
Other versions
TWI318425B (zh
Inventor
Hitoshi Tamura
Naoki Yasui
Seiichi Watanabe
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of TW200746291A publication Critical patent/TW200746291A/zh
Application granted granted Critical
Publication of TWI318425B publication Critical patent/TWI318425B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
TW095131153A 2006-02-22 2006-08-24 Plasma processing apparatus and plasma processing method TW200746291A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006045729A JP4920991B2 (ja) 2006-02-22 2006-02-22 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
TW200746291A true TW200746291A (en) 2007-12-16
TWI318425B TWI318425B (zh) 2009-12-11

Family

ID=38427109

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095131153A TW200746291A (en) 2006-02-22 2006-08-24 Plasma processing apparatus and plasma processing method

Country Status (4)

Country Link
US (3) US20070193976A1 (zh)
JP (1) JP4920991B2 (zh)
KR (1) KR100838750B1 (zh)
TW (1) TW200746291A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI478204B (zh) * 2012-08-24 2015-03-21 Hitachi High Tech Corp Plasma processing device and plasma processing method

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KR101394337B1 (ko) * 2006-08-30 2014-05-13 엘아이지에이디피 주식회사 정전척
KR101045621B1 (ko) * 2008-12-31 2011-06-30 엘아이지에이디피 주식회사 정전척 및 상기 정전척을 이용한 기판의 바이어스 전압 측정방법
JP2010199429A (ja) * 2009-02-26 2010-09-09 Fujifilm Corp プラズマエッチング方法及びプラズマエッチング装置並びに液体吐出ヘッドの製造方法
US9299539B2 (en) 2009-08-21 2016-03-29 Lam Research Corporation Method and apparatus for measuring wafer bias potential
KR101760536B1 (ko) * 2009-11-19 2017-07-31 램 리써치 코포레이션 플라즈마 프로세싱 시스템을 제어하는 방법 및 장치
JP6541623B2 (ja) * 2016-06-20 2019-07-10 東京エレクトロン株式会社 プラズマ処理装置、及び波形補正方法
JP7241540B2 (ja) * 2018-12-28 2023-03-17 東京エレクトロン株式会社 測定方法及び測定治具
CN114008755A (zh) * 2019-04-29 2022-02-01 应用材料公司 接地带组件
US11694869B2 (en) * 2020-12-08 2023-07-04 Applied Materials Israel Ltd. Evaluating a contact between a wafer and an electrostatic chuck
WO2023211665A1 (en) * 2022-04-25 2023-11-02 Lam Research Corporation Method to enhance etch rate and improve critical dimension of features and mask selectivity

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US5556549A (en) * 1994-05-02 1996-09-17 Lsi Logic Corporation Power control and delivery in plasma processing equipment
US5474648A (en) * 1994-07-29 1995-12-12 Lsi Logic Corporation Uniform and repeatable plasma processing
US5576629A (en) * 1994-10-24 1996-11-19 Fourth State Technology, Inc. Plasma monitoring and control method and system
JP2880920B2 (ja) * 1994-10-27 1999-04-12 日本電気株式会社 エッチング装置
JP3208044B2 (ja) * 1995-06-07 2001-09-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR100280443B1 (ko) * 1998-02-06 2001-06-01 김영환 반도체식각장비의3극척장치
JP2000049216A (ja) * 1998-07-28 2000-02-18 Mitsubishi Electric Corp プラズマ処理装置および当該装置で用いられる静電チャック吸着方法
KR20000038597A (ko) 1998-12-08 2000-07-05 윤종용 반도체 식각장치
JP3959200B2 (ja) * 1999-03-19 2007-08-15 株式会社東芝 半導体装置の製造装置
US6188564B1 (en) * 1999-03-31 2001-02-13 Lam Research Corporation Method and apparatus for compensating non-uniform wafer processing in plasma processing chamber
US6563076B1 (en) 1999-09-30 2003-05-13 Lam Research Corporation Voltage control sensor and control interface for radio frequency power regulation in a plasma reactor
JP3659180B2 (ja) * 2000-03-24 2005-06-15 株式会社日立製作所 半導体製造装置および処理方法、およびウエハ電位プローブ
JP2003045846A (ja) * 2001-08-01 2003-02-14 Tokyo Electron Ltd 半導体製造装置の監視方法及びその制御方法
US6727655B2 (en) * 2001-10-26 2004-04-27 Mcchesney Jon Method and apparatus to monitor electrical states at a workpiece in a semiconductor processing chamber
JP2003228459A (ja) * 2001-11-30 2003-08-15 Fujitsu Component Ltd 入力装置
TWI259546B (en) * 2002-06-28 2006-08-01 Tokyo Electron Ltd Method and system for predicting process performance using material processing tool and sensor data
JP4319514B2 (ja) 2002-11-29 2009-08-26 株式会社日立ハイテクノロジーズ サグ補償機能付き高周波電源を有するプラズマ処理装置
US7247218B2 (en) * 2003-05-16 2007-07-24 Applied Materials, Inc. Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power
US20050072444A1 (en) * 2003-10-03 2005-04-07 Shigeru Shirayone Method for processing plasma processing apparatus
KR100668956B1 (ko) 2004-12-22 2007-01-12 동부일렉트로닉스 주식회사 반도체 제조 방법
JP2006210415A (ja) * 2005-01-25 2006-08-10 Renesas Technology Corp 部品検査方法、部品検査装置および製造装置
JP4928817B2 (ja) * 2006-04-07 2012-05-09 株式会社日立ハイテクノロジーズ プラズマ処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI478204B (zh) * 2012-08-24 2015-03-21 Hitachi High Tech Corp Plasma processing device and plasma processing method

Also Published As

Publication number Publication date
US20070193976A1 (en) 2007-08-23
KR100838750B1 (ko) 2008-06-17
JP4920991B2 (ja) 2012-04-18
KR20070085010A (ko) 2007-08-27
TWI318425B (zh) 2009-12-11
US8142674B2 (en) 2012-03-27
US20090194506A1 (en) 2009-08-06
US20120145323A1 (en) 2012-06-14
JP2007227562A (ja) 2007-09-06

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees