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Application filed by Innolux Display CorpfiledCriticalInnolux Display Corp
Priority to TW95115383ApriorityCriticalpatent/TWI296444B/en
Publication of TW200742083ApublicationCriticalpatent/TW200742083A/en
Application grantedgrantedCritical
Publication of TWI296444BpublicationCriticalpatent/TWI296444B/en
The present invention relates to a thin film transistor substrate and the method of manufacturing the same. The thin film transistor includes a substrate, a Si thin film, an insulator layer, and a metal layer. The substrate, the Si film and the insulator layer are orderly disposed from bottom to top. The insulator layer includes a first insulator layer and a second insulator layer, and the second insulator layer covers part of the first insulator layer. The present invention also relates to a method of manufacturing the said thin film transistor substrate.
TW95115383A2006-04-282006-04-28Thin film transistor substrate and method of manufacturing same
TWI296444B
(en)
Structure and method for manufacturing strained silicon directly-on insulator substrate with hybrid crystalling orientation and different stress levels
Nitride semiconductor substrate, method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate