TW200741866A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
TW200741866A
TW200741866A TW095124792A TW95124792A TW200741866A TW 200741866 A TW200741866 A TW 200741866A TW 095124792 A TW095124792 A TW 095124792A TW 95124792 A TW95124792 A TW 95124792A TW 200741866 A TW200741866 A TW 200741866A
Authority
TW
Taiwan
Prior art keywords
seal ring
interlayer insulation
insulation film
semiconductor device
film
Prior art date
Application number
TW095124792A
Other languages
Chinese (zh)
Inventor
Keiji Hashimoto
Kazuo Tomita
Atsushi Ishii
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200741866A publication Critical patent/TW200741866A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/564—Details not otherwise provided for, e.g. protection against moisture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A semiconductor device according to the present invention has a first interlayer insulation film including a low-dielectric-constant film, a second interlayer insulation film formed on the first interlayer insulation film and not including a low-dielectric-constant film, a first seal ring formed in the first interlayer insulation film, and a second seal ring formed in the second interlayer insulation film and connected to the first seal ring. The number of the vias of the first seal ring is two or more, and the number of the via of the second seal ring is one. It is preferable that two or more seal rings each comprising of the first seal ring and the second seal ring are provided.
TW095124792A 2005-07-08 2006-07-07 Semiconductor device TW200741866A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005199762A JP2008270232A (en) 2005-07-08 2005-07-08 Semiconductor device

Publications (1)

Publication Number Publication Date
TW200741866A true TW200741866A (en) 2007-11-01

Family

ID=37636991

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095124792A TW200741866A (en) 2005-07-08 2006-07-07 Semiconductor device

Country Status (3)

Country Link
JP (1) JP2008270232A (en)
TW (1) TW200741866A (en)
WO (1) WO2007007595A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI466257B (en) * 2010-03-31 2014-12-21 Toshiba Kk Semiconductor device and method for manufacturing same
CN110875256A (en) * 2018-08-30 2020-03-10 南亚科技股份有限公司 Semiconductor element and method for manufacturing the same

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009081351A (en) * 2007-09-27 2009-04-16 Sanyo Electric Co Ltd Semiconductor device, and manufacturing method thereof
JP5334459B2 (en) * 2008-05-30 2013-11-06 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
JP5439901B2 (en) * 2009-03-31 2014-03-12 富士通セミコンダクター株式会社 Semiconductor device and manufacturing method thereof
JP6406138B2 (en) * 2014-07-18 2018-10-17 株式会社デンソー Semiconductor device and manufacturing method thereof
WO2016143195A1 (en) * 2015-03-11 2016-09-15 オリンパス株式会社 Size reduction of imaging device
CN106898580B (en) * 2015-12-18 2019-05-03 中芯国际集成电路制造(上海)有限公司 Chip protection ring, semiconductor chip, semiconductor crystal wafer and packaging method
KR102450310B1 (en) 2017-11-27 2022-10-04 삼성전자주식회사 Semiconductor chip and multi-chip package having the same
JP7367669B2 (en) * 2018-04-02 2023-10-24 株式会社ソシオネクスト semiconductor equipment
KR102599050B1 (en) 2018-08-20 2023-11-06 삼성전자주식회사 Method of manufacturing semiconductor chip

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100199368B1 (en) * 1996-06-21 1999-06-15 김영환 Contact mask used in manufacturing semiconductor devices
JP3778445B2 (en) * 2003-03-27 2006-05-24 富士通株式会社 Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI466257B (en) * 2010-03-31 2014-12-21 Toshiba Kk Semiconductor device and method for manufacturing same
CN110875256A (en) * 2018-08-30 2020-03-10 南亚科技股份有限公司 Semiconductor element and method for manufacturing the same

Also Published As

Publication number Publication date
JP2008270232A (en) 2008-11-06
WO2007007595A1 (en) 2007-01-18

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