TW200739975A - Piezoelectric MEMS switches and methods of making - Google Patents

Piezoelectric MEMS switches and methods of making

Info

Publication number
TW200739975A
TW200739975A TW096104000A TW96104000A TW200739975A TW 200739975 A TW200739975 A TW 200739975A TW 096104000 A TW096104000 A TW 096104000A TW 96104000 A TW96104000 A TW 96104000A TW 200739975 A TW200739975 A TW 200739975A
Authority
TW
Taiwan
Prior art keywords
high temperature
making
methods
piezoelectric layer
mems switches
Prior art date
Application number
TW096104000A
Other languages
English (en)
Inventor
Lianjun Liu
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200739975A publication Critical patent/TW200739975A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H57/00Electrostrictive relays; Piezoelectric relays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H57/00Electrostrictive relays; Piezoelectric relays
    • H01H2057/006Micromechanical piezoelectric relay

Landscapes

  • Micromachines (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
TW096104000A 2006-02-28 2007-02-05 Piezoelectric MEMS switches and methods of making TW200739975A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/363,791 US7556978B2 (en) 2006-02-28 2006-02-28 Piezoelectric MEMS switches and methods of making

Publications (1)

Publication Number Publication Date
TW200739975A true TW200739975A (en) 2007-10-16

Family

ID=38444513

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096104000A TW200739975A (en) 2006-02-28 2007-02-05 Piezoelectric MEMS switches and methods of making

Country Status (5)

Country Link
US (1) US7556978B2 (zh)
JP (1) JP2009528667A (zh)
CN (1) CN101390226B (zh)
TW (1) TW200739975A (zh)
WO (1) WO2007127515A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI739121B (zh) * 2019-04-01 2021-09-11 台灣積體電路製造股份有限公司 微機電系統裝置及其形成方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8680955B1 (en) * 2009-02-20 2014-03-25 Rf Micro Devices, Inc. Thermally neutral anchor configuration for an electromechanical actuator
US8570122B1 (en) 2009-05-13 2013-10-29 Rf Micro Devices, Inc. Thermally compensating dieletric anchors for microstructure devices
IT1397520B1 (it) * 2009-12-21 2013-01-16 Ribes Ricerche E Formazione S R L Microswitch piezoelettrico, in particolare per applicazioni industriali.
KR20110082420A (ko) * 2010-01-11 2011-07-19 삼성전자주식회사 초전 재료를 이용한 에너지 수확 장치
JP5598653B2 (ja) * 2010-02-01 2014-10-01 ソニー株式会社 有接点スイッチ
DE102010002818B4 (de) * 2010-03-12 2017-08-31 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Bauelementes
US8551798B2 (en) * 2010-09-21 2013-10-08 Taiwan Semiconductor Manufacturing Company, Ltd. Microstructure with an enhanced anchor
US9225311B2 (en) 2012-02-21 2015-12-29 International Business Machines Corporation Method of manufacturing switchable filters
US9633930B2 (en) * 2014-11-26 2017-04-25 Kookmin University Industry Academy Cooperation Foundation Method of forming through-hole in silicon substrate, method of forming electrical connection element penetrating silicon substrate and semiconductor device manufactured thereby
CN108584864B (zh) * 2018-04-16 2019-08-09 大连理工大学 一种基于聚酰亚胺的柔性静电驱动mems继电器的制造方法
US20210139314A1 (en) * 2019-11-07 2021-05-13 Innovative Interface Laboratory Corp. Linear actuator
US11360014B1 (en) * 2021-07-19 2022-06-14 Multi-Chem Group, Llc Methods and systems for characterizing fluid composition and process optimization in industrial water operations using MEMS technology

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5004555A (en) * 1989-10-31 1991-04-02 Industrial Technology Research Institute Heat cycle treatment for improving the performance of piezoelectric ceramics
US5578976A (en) * 1995-06-22 1996-11-26 Rockwell International Corporation Micro electromechanical RF switch
US5638946A (en) * 1996-01-11 1997-06-17 Northeastern University Micromechanical switch with insulated switch contact
US5938612A (en) 1997-05-05 1999-08-17 Creare Inc. Multilayer ultrasonic transducer array including very thin layer of transducer elements
US6046659A (en) * 1998-05-15 2000-04-04 Hughes Electronics Corporation Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications
US6060336A (en) 1998-12-11 2000-05-09 C.F. Wan Incorporated Micro-electro mechanical device made from mono-crystalline silicon and method of manufacture therefore
WO2002096166A1 (en) * 2001-05-18 2002-11-28 Corporation For National Research Initiatives Radio frequency microelectromechanical systems (mems) devices on low-temperature co-fired ceramic (ltcc) substrates
KR100517496B1 (ko) 2002-01-04 2005-09-28 삼성전자주식회사 스텝-업 구조를 갖는 외팔보 및 그 제조방법
US6706548B2 (en) 2002-01-08 2004-03-16 Motorola, Inc. Method of making a micromechanical device
US6794101B2 (en) 2002-05-31 2004-09-21 Motorola, Inc. Micro-electro-mechanical device and method of making
EP1514285B1 (en) 2002-06-05 2011-08-10 Nxp B.V. Electronic device and method of matching the impedance thereof
US7098577B2 (en) 2002-10-21 2006-08-29 Hrl Laboratories, Llc Piezoelectric switch for tunable electronic components
US7132723B2 (en) 2002-11-14 2006-11-07 Raytheon Company Micro electro-mechanical system device with piezoelectric thin film actuator
US7119440B2 (en) * 2004-03-30 2006-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Back end IC wiring with improved electro-migration resistance

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI739121B (zh) * 2019-04-01 2021-09-11 台灣積體電路製造股份有限公司 微機電系統裝置及其形成方法

Also Published As

Publication number Publication date
US7556978B2 (en) 2009-07-07
US20070202626A1 (en) 2007-08-30
CN101390226A (zh) 2009-03-18
WO2007127515A2 (en) 2007-11-08
WO2007127515A3 (en) 2008-01-24
CN101390226B (zh) 2011-04-06
JP2009528667A (ja) 2009-08-06

Similar Documents

Publication Publication Date Title
TW200739975A (en) Piezoelectric MEMS switches and methods of making
Kim et al. Microstructures and piezoelectric properties in the Li2O‐excess 0.95 (Na0. 5K0. 5) NbO3–0.05 LiTaO3 ceramics
WO2007024732A3 (en) Dual substrate electrostatic mems switch with hermetic seal and method of manufacture
WO2011017625A3 (en) Method of forming a thermally stable diamond cutting element
EP1353443A3 (en) Spring contact
TW200641948A (en) Electrostatic micro switch, production method thereof, and apparatus provided with electrostatic micro switch
WO2007022275A3 (en) Siox:si sputtering targets and method of making and using such targets
ATE353536T1 (de) Niedertemperaturverfahren und zusammensetzungen zur herstellung elektischer leiter
TWI268183B (en) Capacitive ultrasonic transducer and method of fabricating the same
ATE447794T1 (de) Entprellungsschaltung
TW200503085A (en) Custom electrodes for molecular memory and logic devices
TW200714650A (en) Paste composition, dielectric composition, capacitor, and process for manufacturing paste composition
ATE502397T1 (de) Halbleiterbauelement
BR112012014648A2 (pt) método para manufatura de uma ilha de contato elétrico e contato elétrico
EP2013939A4 (en) ELEMENT OF ACCORD AND RESONATOR MAY BE GRANTED
DK2011166T3 (da) Piezoaktuator med flerlagsindkapsling og fremgangsmåde til fremstilling deraf
EP1895270A3 (fr) Microsystème, plus particulièrement microgyromètre, avec élément de détection à électrodes capacitives
Wang et al. Studies on the platinum thick film sensor conformally written by laser micro-cladding: Formability, microstructure, and performance
EP1955346B8 (en) Contact configurations for mems relays and mems switches and method for making same
TW200727360A (en) SiOx:Si composite articles and methods of making same
TW200718748A (en) Application of electrical material in high frequency and manufacturing method of the same
WO2012008989A3 (en) Forming memory using high power impulse magnetron sputtering
Xu et al. Ultrasensitive piezoresistive behavior of silicon carbonitride thin films by optimizing nanomorphologies
TW200710278A (en) Complex oxide film and method for producing same, dielectric material including complex oxide film, piezoelectric material, capacitor, piezoelectric element and electronic device.
DK1169492T3 (da) Method of producing thin, poorly soluble coatings