TW200739263A - Positive photoresist composition for immersion lithography, and method for forming resist pattern - Google Patents

Positive photoresist composition for immersion lithography, and method for forming resist pattern

Info

Publication number
TW200739263A
TW200739263A TW095144004A TW95144004A TW200739263A TW 200739263 A TW200739263 A TW 200739263A TW 095144004 A TW095144004 A TW 095144004A TW 95144004 A TW95144004 A TW 95144004A TW 200739263 A TW200739263 A TW 200739263A
Authority
TW
Taiwan
Prior art keywords
photoresist composition
positive photoresist
immersion lithography
resist pattern
forming resist
Prior art date
Application number
TW095144004A
Other languages
English (en)
Inventor
Kazuhito Sasaki
Hiroaki Shimizu
Kotaro Endo
Kyoko Ohshita
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200739263A publication Critical patent/TW200739263A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/02—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings
    • C08F232/04—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings having one carbon-to-carbon double bond
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW095144004A 2005-12-05 2006-11-28 Positive photoresist composition for immersion lithography, and method for forming resist pattern TW200739263A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005351358 2005-12-05
JP2006006012 2006-01-13
JP2006117962A JP2007212990A (ja) 2005-12-05 2006-04-21 液浸露光用ポジ型レジスト組成物およびレジストパターン形成方法

Publications (1)

Publication Number Publication Date
TW200739263A true TW200739263A (en) 2007-10-16

Family

ID=38122737

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095144004A TW200739263A (en) 2005-12-05 2006-11-28 Positive photoresist composition for immersion lithography, and method for forming resist pattern

Country Status (4)

Country Link
JP (1) JP2007212990A (zh)
KR (1) KR20080065694A (zh)
TW (1) TW200739263A (zh)
WO (1) WO2007066591A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5481768B2 (ja) * 2006-09-08 2014-04-23 Ｊｓｒ株式会社 感放射線性樹脂組成物及びそれを用いたレジストパターン形成方法
US8518628B2 (en) * 2006-09-22 2013-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Surface switchable photoresist
EP1975705B1 (en) 2007-03-28 2016-04-27 FUJIFILM Corporation Positive resist composition and pattern-forming method
JP5358107B2 (ja) * 2007-03-28 2013-12-04 富士フイルム株式会社 ポジ型レジスト組成物およびパターン形成方法
JP5537829B2 (ja) * 2009-03-31 2014-07-02 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法
JP5586294B2 (ja) 2009-03-31 2014-09-10 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法
JP5572643B2 (ja) * 2012-01-23 2014-08-13 富士フイルム株式会社 レジスト組成物及び該レジスト組成物を用いたパターン形成方法
JP2012150501A (ja) * 2012-03-21 2012-08-09 Jsr Corp 感放射線性樹脂組成物及びそれを用いたレジストパターン形成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3633194B2 (ja) * 1997-03-12 2005-03-30 Ｊｓｒ株式会社 感放射線性樹脂組成物
EP0982636B1 (en) * 1998-08-27 2005-12-14 Ricoh Company, Ltd. Toner for use in electrophotography, image formation method using the toner, method of producing the toner, and apparatus for producing the toner
JP4131062B2 (ja) * 1998-09-25 2008-08-13 信越化学工業株式会社 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法
JP3812622B2 (ja) * 1999-09-17 2006-08-23 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP2003335826A (ja) * 2002-05-20 2003-11-28 Jsr Corp 共重合体とその製造方法および感放射線性樹脂組成物
JP4530751B2 (ja) * 2003-07-24 2010-08-25 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP4424500B2 (ja) * 2004-04-09 2010-03-03 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
WO2005121193A1 (ja) * 2004-06-08 2005-12-22 Tokyo Ohka Kogyo Co., Ltd. 重合体、ポジ型レジスト組成物およびレジストパターン形成方法
US7799883B2 (en) * 2005-02-22 2010-09-21 Promerus Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
JP4524207B2 (ja) * 2005-03-02 2010-08-11 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2006301435A (ja) * 2005-04-22 2006-11-02 Fuji Photo Film Co Ltd 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法

Also Published As

Publication number Publication date
JP2007212990A (ja) 2007-08-23
WO2007066591A1 (ja) 2007-06-14
KR20080065694A (ko) 2008-07-14

Similar Documents

Publication Publication Date Title
TW200739263A (en) Positive photoresist composition for immersion lithography, and method for forming resist pattern
TW200801810A (en) Resist composition for immersion lithography, and method for forming resist pattern
TW200627071A (en) Resist composition for immersion exposure and method for forming resist pattern
TW200728922A (en) Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition
TW200734822A (en) Positive resist composition and pattern forming method using the same
TW200641536A (en) Positive resist composition and pattern-forming method using the same
EP1739483A3 (en) Positive photosensitive composition and pattern forming method using the same
GB2437887A (en) Exposure apparatus and device manufacturing method
EP1717261A4 (en) POLYMER COMPOUND, PHOTORESISTIC COMPOSITION WITH SUCH A POLYMER COMPOUND AND METHOD FOR FORMING A RESISTANCE STRUCTURE
EP2345933A4 (en) POSITIVE PHOTOSENSITIVE RESIN COMPOSITION FOR SPRAY COATING AND PROCESS FOR PRODUCING THROUGH ELECTRODE USING THE SAME
TW200712777A (en) Positive photosensitive resin composition, uses thereof, and method for forming positive pattern
TW200719088A (en) Method for forming positive resist composition, positive resist composition, and method for forming resist pattern
TW200734830A (en) Lithogrpahic apparatus and device manufacturing method using multiple exposures and multiple exposure types
EP1736485A4 (en) POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD OF MAKING RESIST PATTERN
WO2006107010A3 (en) Positive photoresist composition, thick film photoresist laminate, method for producing thick film resist pattern, and method for producing connecting terminal
WO2009090474A8 (en) A process for imaging a photoresist coated over an antireflective coating
EP2329320A4 (en) POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN FORMATION METHOD
TW200715057A (en) Positive resist composition and method for forming resist pattern
TW200715372A (en) Exposure method
TW200725181A (en) Positive resist composition and pattern forming method using the same
TW200707108A (en) Positive resist composition and method for forming resist pattern
WO2009022561A1 (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
SG155061A1 (en) Photoresist composition for deep ultraviolet lithography
TW200732843A (en) Photosensitive resin composition and manufacturing method of semiconductor device using the same
TW200611894A (en) Compound, polymer compound, positive resist composition, and method for forming resist pattern