TW200611894A - Compound, polymer compound, positive resist composition, and method for forming resist pattern - Google Patents
Compound, polymer compound, positive resist composition, and method for forming resist patternInfo
- Publication number
- TW200611894A TW200611894A TW094120312A TW94120312A TW200611894A TW 200611894 A TW200611894 A TW 200611894A TW 094120312 A TW094120312 A TW 094120312A TW 94120312 A TW94120312 A TW 94120312A TW 200611894 A TW200611894 A TW 200611894A
- Authority
- TW
- Taiwan
- Prior art keywords
- compound
- resist composition
- positive resist
- resist pattern
- polymer compound
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/74—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring
- C07C69/757—Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/56—Ring systems containing bridged rings
- C07C2603/58—Ring systems containing bridged rings containing three rings
- C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
- C07C2603/74—Adamantanes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/56—Ring systems containing bridged rings
- C07C2603/90—Ring systems containing bridged rings containing more than four rings
- C07C2603/91—Polycyclopentadienes; Hydrogenated polycyclopentadienes
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
A positive resist composition, which can favorably develop a resist pattern with good resolution by using an acid generator that generates acid whose strength is week, are provided. The positive resist composition of the present invention includes a polymer including constitutional unit (a1) represented by a general formula (II) and an acid generator (B) that generates acid on exposure.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004182299A JP2006001907A (en) | 2004-06-21 | 2004-06-21 | Compound, polymer, positive resist composition, and resist pattern formation method |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200611894A true TW200611894A (en) | 2006-04-16 |
TWI305201B TWI305201B (en) | 2009-01-11 |
Family
ID=35509602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094120312A TWI305201B (en) | 2004-06-21 | 2005-06-17 | Compound, polymer compound, positive resist composition, and method for forming resist pattern |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2006001907A (en) |
TW (1) | TWI305201B (en) |
WO (1) | WO2005123655A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4738803B2 (en) * | 2004-12-14 | 2011-08-03 | 東京応化工業株式会社 | Polymer compound, positive resist composition, and resist pattern forming method |
JP4191150B2 (en) | 2005-02-16 | 2008-12-03 | 東京応化工業株式会社 | Positive resist composition and resist pattern forming method |
JP4684740B2 (en) * | 2005-05-19 | 2011-05-18 | 東京応化工業株式会社 | Positive resist composition and resist pattern forming method |
JP2006330180A (en) * | 2005-05-24 | 2006-12-07 | Tokyo Ohka Kogyo Co Ltd | Positive photoresist composition, thick film photoresist laminated body, method for manufacturing thick film resist pattern, and method for manufacturing connecting terminal |
JP4925954B2 (en) * | 2007-07-20 | 2012-05-09 | 東京応化工業株式会社 | Positive resist composition and resist pattern forming method |
JP2009053688A (en) * | 2007-07-30 | 2009-03-12 | Fujifilm Corp | Positive resist composition and pattern forming method |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1130864A (en) * | 1997-07-10 | 1999-02-02 | Fuji Photo Film Co Ltd | Positive photoresist composition for exposure to far uv ray |
JP2002182393A (en) * | 2000-10-04 | 2002-06-26 | Jsr Corp | Radiation sensitive resin composition |
-
2004
- 2004-06-21 JP JP2004182299A patent/JP2006001907A/en not_active Withdrawn
-
2005
- 2005-06-16 WO PCT/JP2005/011067 patent/WO2005123655A1/en active Application Filing
- 2005-06-17 TW TW094120312A patent/TWI305201B/en active
Also Published As
Publication number | Publication date |
---|---|
WO2005123655A1 (en) | 2005-12-29 |
TWI305201B (en) | 2009-01-11 |
JP2006001907A (en) | 2006-01-05 |
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