TW200735206A - Method of dry etching of interlayer insulation film and etching device - Google Patents
Method of dry etching of interlayer insulation film and etching deviceInfo
- Publication number
- TW200735206A TW200735206A TW095108291A TW95108291A TW200735206A TW 200735206 A TW200735206 A TW 200735206A TW 095108291 A TW095108291 A TW 095108291A TW 95108291 A TW95108291 A TW 95108291A TW 200735206 A TW200735206 A TW 200735206A
- Authority
- TW
- Taiwan
- Prior art keywords
- etching
- dry etching
- insulation film
- interlayer insulation
- gas
- Prior art date
Links
- 238000001312 dry etching Methods 0.000 title abstract 3
- 238000005530 etching Methods 0.000 title abstract 3
- 238000009413 insulation Methods 0.000 title abstract 2
- 239000011229 interlayer Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 229910052794 bromium Inorganic materials 0.000 abstract 2
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 150000002367 halogens Chemical class 0.000 abstract 2
- 229910052740 iodine Inorganic materials 0.000 abstract 2
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095108291A TW200735206A (en) | 2006-03-10 | 2006-03-10 | Method of dry etching of interlayer insulation film and etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095108291A TW200735206A (en) | 2006-03-10 | 2006-03-10 | Method of dry etching of interlayer insulation film and etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200735206A true TW200735206A (en) | 2007-09-16 |
| TWI343601B TWI343601B (https=) | 2011-06-11 |
Family
ID=45074892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095108291A TW200735206A (en) | 2006-03-10 | 2006-03-10 | Method of dry etching of interlayer insulation film and etching device |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200735206A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110178206A (zh) * | 2016-12-30 | 2019-08-27 | 乔治洛德方法研究和开发液化空气有限公司 | 用于蚀刻半导体结构的含碘化合物 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11798811B2 (en) | 2020-06-26 | 2023-10-24 | American Air Liquide, Inc. | Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures |
-
2006
- 2006-03-10 TW TW095108291A patent/TW200735206A/zh unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110178206A (zh) * | 2016-12-30 | 2019-08-27 | 乔治洛德方法研究和开发液化空气有限公司 | 用于蚀刻半导体结构的含碘化合物 |
| CN110178206B (zh) * | 2016-12-30 | 2023-08-18 | 乔治洛德方法研究和开发液化空气有限公司 | 用于蚀刻半导体结构的含碘化合物 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI343601B (https=) | 2011-06-11 |
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