TW200733231A - Apparatus and method for controlling plasma density profile - Google Patents

Apparatus and method for controlling plasma density profile

Info

Publication number
TW200733231A
TW200733231A TW095147444A TW95147444A TW200733231A TW 200733231 A TW200733231 A TW 200733231A TW 095147444 A TW095147444 A TW 095147444A TW 95147444 A TW95147444 A TW 95147444A TW 200733231 A TW200733231 A TW 200733231A
Authority
TW
Taiwan
Prior art keywords
power transmission
power
plasma density
density profile
transmitted
Prior art date
Application number
TW095147444A
Other languages
English (en)
Other versions
TWI348734B (en
Inventor
Rajinder Dhindsa
Felix Kozakevich
Lumin Li
Dave Trussell
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200733231A publication Critical patent/TW200733231A/zh
Application granted granted Critical
Publication of TWI348734B publication Critical patent/TWI348734B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0081—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by electric means
TW095147444A 2005-12-16 2006-12-18 Apparatus and method for controlling plasma density profile TWI348734B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/303,729 US7683289B2 (en) 2005-12-16 2005-12-16 Apparatus and method for controlling plasma density profile

Publications (2)

Publication Number Publication Date
TW200733231A true TW200733231A (en) 2007-09-01
TWI348734B TWI348734B (en) 2011-09-11

Family

ID=38174144

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095147444A TWI348734B (en) 2005-12-16 2006-12-18 Apparatus and method for controlling plasma density profile

Country Status (5)

Country Link
US (2) US7683289B2 (zh)
KR (1) KR101433386B1 (zh)
CN (2) CN102097273A (zh)
TW (1) TWI348734B (zh)
WO (1) WO2007078572A2 (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
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TWI463517B (zh) * 2011-07-28 2014-12-01 Applied Materials Israel Ltd 檢查物的高速放電的調變器、系統及方法
TWI486102B (zh) * 2008-12-24 2015-05-21 Oxford Instr Nanotechnology Tools Ltd 訊號產生系統
TWI599272B (zh) * 2012-09-14 2017-09-11 蘭姆研究公司 根據三個或更多狀態之功率及頻率調整
TWI665710B (zh) * 2013-09-19 2019-07-11 美商蘭姆研究公司 在基板的電漿處理期間控制離子的方法及系統
TWI774283B (zh) * 2016-01-24 2022-08-11 美商應用材料股份有限公司 用於產生派形加工的電漿源組件、處理腔室及方法

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US7683289B2 (en) * 2005-12-16 2010-03-23 Lam Research Corporation Apparatus and method for controlling plasma density profile
US8012306B2 (en) * 2006-02-15 2011-09-06 Lam Research Corporation Plasma processing reactor with multiple capacitive and inductive power sources
US8222156B2 (en) * 2006-12-29 2012-07-17 Lam Research Corporation Method and apparatus for processing a substrate using plasma
US20090236214A1 (en) 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers
US8206552B2 (en) * 2008-06-25 2012-06-26 Applied Materials, Inc. RF power delivery system in a semiconductor apparatus
EP4066797A1 (en) 2009-04-30 2022-10-05 Zeltiq Aesthetics, Inc. Device for removing heat from subcutaneous lipid-rich cells
US9083182B2 (en) 2011-11-21 2015-07-14 Lam Research Corporation Bypass capacitors for high voltage bias power in the mid frequency RF range
US9263240B2 (en) 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
KR101971312B1 (ko) * 2011-11-23 2019-04-22 램 리써치 코포레이션 다중 존 가스 주입 상부 전극 시스템
CN104011838B (zh) 2011-11-24 2016-10-05 朗姆研究公司 具有柔性对称的rf返回带的等离子体处理室
US9114666B2 (en) * 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
CN104685608A (zh) 2012-09-26 2015-06-03 应用材料公司 具有闭环控制的底部和侧边等离子体调节
US9157730B2 (en) 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
CN105097603B (zh) * 2014-04-30 2019-03-12 北京北方华创微电子装备有限公司 工艺腔室检测装置及检测工艺腔室中工艺环境的方法
JP2017134950A (ja) 2016-01-26 2017-08-03 東京エレクトロン株式会社 プラズマ処理装置および制御方法
KR102487342B1 (ko) 2016-06-14 2023-01-13 삼성전자주식회사 정전척 어셈블리 및 이를 구비하는 플라즈마 처리장치
JP6869034B2 (ja) * 2017-01-17 2021-05-12 東京エレクトロン株式会社 プラズマ処理装置
JP2018129224A (ja) 2017-02-09 2018-08-16 東京エレクトロン株式会社 プラズマ処理装置
CN117174641A (zh) 2017-04-07 2023-12-05 应用材料公司 在基板边缘上的等离子体密度控制
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
KR102475069B1 (ko) 2017-06-30 2022-12-06 삼성전자주식회사 반도체 제조 장치, 이의 동작 방법
US10892142B2 (en) 2018-03-16 2021-01-12 Samsung Electronics Co., Ltd. System for fabricating a semiconductor device
US11086233B2 (en) 2018-03-20 2021-08-10 Lam Research Corporation Protective coating for electrostatic chucks
US11183368B2 (en) * 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
CN114730688A (zh) * 2019-11-15 2022-07-08 朗姆研究公司 调谐电路中基于频率的阻抗调整
CN112530773B (zh) * 2020-11-27 2023-11-14 北京北方华创微电子装备有限公司 半导体工艺设备

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
US5847918A (en) * 1995-09-29 1998-12-08 Lam Research Corporation Electrostatic clamping method and apparatus for dielectric workpieces in vacuum processors
US5998932A (en) * 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
US6259334B1 (en) * 1998-12-22 2001-07-10 Lam Research Corporation Methods for controlling an RF matching network
AU2001224729A1 (en) 2000-01-10 2001-07-24 Tokyo Electron Limited Segmented electrode assembly and method for plasma processing
TW506234B (en) * 2000-09-18 2002-10-11 Tokyo Electron Ltd Tunable focus ring for plasma processing
US6741446B2 (en) * 2001-03-30 2004-05-25 Lam Research Corporation Vacuum plasma processor and method of operating same
WO2002097855A1 (en) * 2001-05-29 2002-12-05 Tokyo Electron Limited Plasma processing apparatus and method
US6770166B1 (en) * 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
US6887340B2 (en) * 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity
KR100486712B1 (ko) 2002-09-04 2005-05-03 삼성전자주식회사 복층 코일 안테나를 구비한 유도결합 플라즈마 발생장치
US7405521B2 (en) * 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
US7144521B2 (en) * 2003-08-22 2006-12-05 Lam Research Corporation High aspect ratio etch using modulation of RF powers of various frequencies
US7767055B2 (en) * 2004-12-03 2010-08-03 Tokyo Electron Limited Capacitive coupling plasma processing apparatus
US7683289B2 (en) * 2005-12-16 2010-03-23 Lam Research Corporation Apparatus and method for controlling plasma density profile

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI486102B (zh) * 2008-12-24 2015-05-21 Oxford Instr Nanotechnology Tools Ltd 訊號產生系統
TWI463517B (zh) * 2011-07-28 2014-12-01 Applied Materials Israel Ltd 檢查物的高速放電的調變器、系統及方法
TWI599272B (zh) * 2012-09-14 2017-09-11 蘭姆研究公司 根據三個或更多狀態之功率及頻率調整
TWI665710B (zh) * 2013-09-19 2019-07-11 美商蘭姆研究公司 在基板的電漿處理期間控制離子的方法及系統
TWI774283B (zh) * 2016-01-24 2022-08-11 美商應用材料股份有限公司 用於產生派形加工的電漿源組件、處理腔室及方法

Also Published As

Publication number Publication date
WO2007078572A3 (en) 2009-02-05
CN101542712A (zh) 2009-09-23
WO2007078572A2 (en) 2007-07-12
US20100126847A1 (en) 2010-05-27
US8299390B2 (en) 2012-10-30
KR101433386B1 (ko) 2014-08-26
US7683289B2 (en) 2010-03-23
CN102097273A (zh) 2011-06-15
CN101542712B (zh) 2011-02-09
KR20080077202A (ko) 2008-08-21
TWI348734B (en) 2011-09-11
US20070141729A1 (en) 2007-06-21

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