TW200730613A - Polishing liquid for polishing aluminum film and polishing method for aluminum film using the same - Google Patents

Polishing liquid for polishing aluminum film and polishing method for aluminum film using the same

Info

Publication number
TW200730613A
TW200730613A TW095142765A TW95142765A TW200730613A TW 200730613 A TW200730613 A TW 200730613A TW 095142765 A TW095142765 A TW 095142765A TW 95142765 A TW95142765 A TW 95142765A TW 200730613 A TW200730613 A TW 200730613A
Authority
TW
Taiwan
Prior art keywords
polishing
aluminum film
same
liquid
polishing liquid
Prior art date
Application number
TW095142765A
Other languages
English (en)
Chinese (zh)
Other versions
TWI326706B (https=
Inventor
Hiroshi Ono
Toranosuke Ashizawa
Yasuo Kamigata
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW200730613A publication Critical patent/TW200730613A/zh
Application granted granted Critical
Publication of TWI326706B publication Critical patent/TWI326706B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/02—Light metals
    • C23F3/03—Light metals with acidic solutions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW095142765A 2005-11-22 2006-11-20 Polishing liquid for polishing aluminum film and polishing method for aluminum film using the same TW200730613A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005336938 2005-11-22
JP2006260709 2006-09-26

Publications (2)

Publication Number Publication Date
TW200730613A true TW200730613A (en) 2007-08-16
TWI326706B TWI326706B (https=) 2010-07-01

Family

ID=38067090

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095142765A TW200730613A (en) 2005-11-22 2006-11-20 Polishing liquid for polishing aluminum film and polishing method for aluminum film using the same

Country Status (5)

Country Link
US (1) US7887609B2 (https=)
JP (2) JP5090925B2 (https=)
KR (2) KR20080059301A (https=)
TW (1) TW200730613A (https=)
WO (1) WO2007060859A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4922019B2 (ja) * 2007-03-06 2012-04-25 株式会社東芝 半導体装置の製造方法
KR101279963B1 (ko) * 2008-12-24 2013-07-05 제일모직주식회사 금속 배선 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
JP5294202B2 (ja) * 2009-02-10 2013-09-18 セイコーインスツル株式会社 パッケージの製造方法
CN102554748B (zh) * 2010-12-23 2014-11-05 中芯国际集成电路制造(北京)有限公司 抛光方法
JP6817896B2 (ja) * 2017-05-26 2021-01-20 株式会社荏原製作所 基板研磨装置および基板研磨方法
KR102349153B1 (ko) * 2019-12-16 2022-01-10 주식회사 포스코 알루미늄 합금용 연마 용액, 그 제조방법 및 이를 이용한 연마 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
JP2002080827A (ja) * 2000-02-09 2002-03-22 Jsr Corp 化学機械研磨用水系分散体
TWI296006B (https=) * 2000-02-09 2008-04-21 Jsr Corp
US6569215B2 (en) * 2000-04-17 2003-05-27 Showa Denko Kabushiki Kaisha Composition for polishing magnetic disk substrate
TW528645B (en) * 2000-04-17 2003-04-21 Showa Denko Kk Composition for polishing magnetic disk substrate
US6568997B2 (en) * 2001-04-05 2003-05-27 Rodel Holdings, Inc. CMP polishing composition for semiconductor devices containing organic polymer particles
JP2005136256A (ja) * 2003-10-31 2005-05-26 Sumitomo Bakelite Co Ltd 研磨用組成物
JP2005158867A (ja) * 2003-11-21 2005-06-16 Jsr Corp 化学機械研磨用水系分散体を調製するためのセット
US20070196975A1 (en) * 2004-04-12 2007-08-23 Hitachi Chemical Co., Ltd. Metal-Polishing Liquid And Polishing Method Using The Same

Also Published As

Publication number Publication date
JP2011228728A (ja) 2011-11-10
JP5090925B2 (ja) 2012-12-05
KR20080059301A (ko) 2008-06-26
KR101189899B1 (ko) 2012-10-10
JPWO2007060859A1 (ja) 2009-05-07
TWI326706B (https=) 2010-07-01
WO2007060859A1 (ja) 2007-05-31
US7887609B2 (en) 2011-02-15
US20070141957A1 (en) 2007-06-21
KR20110120990A (ko) 2011-11-04

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