TW200729220A - Test circuit for multi-port memory device - Google Patents

Test circuit for multi-port memory device

Info

Publication number
TW200729220A
TW200729220A TW095136053A TW95136053A TW200729220A TW 200729220 A TW200729220 A TW 200729220A TW 095136053 A TW095136053 A TW 095136053A TW 95136053 A TW95136053 A TW 95136053A TW 200729220 A TW200729220 A TW 200729220A
Authority
TW
Taiwan
Prior art keywords
memory device
bus line
test circuit
port memory
write
Prior art date
Application number
TW095136053A
Other languages
English (en)
Other versions
TWI310560B (en
Inventor
Hwang Hur
Chang-Ho Do
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200729220A publication Critical patent/TW200729220A/zh
Application granted granted Critical
Publication of TWI310560B publication Critical patent/TWI310560B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/14—Implementation of control logic, e.g. test mode decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/022—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in I/O circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/1201—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising I/O circuitry

Landscapes

  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
TW095136053A 2005-09-28 2006-09-28 Semiconductor memory device with multi-port TWI310560B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20050090857 2005-09-28
KR1020060041190A KR100842757B1 (ko) 2005-09-28 2006-05-08 반도체 메모리 장치

Publications (2)

Publication Number Publication Date
TW200729220A true TW200729220A (en) 2007-08-01
TWI310560B TWI310560B (en) 2009-06-01

Family

ID=38045087

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095136053A TWI310560B (en) 2005-09-28 2006-09-28 Semiconductor memory device with multi-port

Country Status (3)

Country Link
KR (1) KR100842757B1 (zh)
CN (1) CN100589208C (zh)
TW (1) TWI310560B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI462109B (zh) * 2008-03-25 2014-11-21 Advanced Risc Mach Ltd 多埠記憶體之自我測試期間的時脈控制

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140076128A (ko) 2012-12-12 2014-06-20 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 동작 방법과, 이를 포함하는 데이터 처리 시스템
US10566034B1 (en) 2018-07-26 2020-02-18 Winbond Electronics Corp. Memory device with control and test circuit, and method for test reading and writing using bit line precharge voltage levels

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0817040B2 (ja) 1986-10-20 1996-02-21 日本電信電話株式会社 半導体メモリ
KR100265764B1 (ko) * 1998-02-02 2000-10-02 윤종용 다수군의 데이터 입출력 채널들 중 어느 일군이 선택되어 테스트되는 반도체 메모리장치
US6178532B1 (en) 1998-06-11 2001-01-23 Micron Technology, Inc. On-chip circuit and method for testing memory devices
KR20000046815A (ko) * 1998-12-31 2000-07-25 구자홍 메모리용 테스트 로직회로

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI462109B (zh) * 2008-03-25 2014-11-21 Advanced Risc Mach Ltd 多埠記憶體之自我測試期間的時脈控制

Also Published As

Publication number Publication date
CN1945746A (zh) 2007-04-11
CN100589208C (zh) 2010-02-10
KR20070035938A (ko) 2007-04-02
KR100842757B1 (ko) 2008-07-01
TWI310560B (en) 2009-06-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees