TW200729208A - Memory device with self refresh cycle control function - Google Patents

Memory device with self refresh cycle control function

Info

Publication number
TW200729208A
TW200729208A TW095136292A TW95136292A TW200729208A TW 200729208 A TW200729208 A TW 200729208A TW 095136292 A TW095136292 A TW 095136292A TW 95136292 A TW95136292 A TW 95136292A TW 200729208 A TW200729208 A TW 200729208A
Authority
TW
Taiwan
Prior art keywords
self refresh
memory device
voltage
signal
temperature
Prior art date
Application number
TW095136292A
Other languages
Chinese (zh)
Other versions
TWI337356B (en
Inventor
Jee-Yul Kim
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200729208A publication Critical patent/TW200729208A/en
Application granted granted Critical
Publication of TWI337356B publication Critical patent/TWI337356B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40626—Temperature related aspects of refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses

Abstract

Provided is a memory device capable of automatically controlling a self refresh cycle by sensing an ambient temperature, rather than setting Extended Mode Register Set (EMRS) code. The memory device includes a temperature sensing unit for generating a first voltage independent of a temperature variation and a second voltage dependent upon a temperature variation, a comparing unit for comparing the first voltage with the second voltage to provide a comparison result signal, and a self refresh signal generating unit for receiving a self refresh entry signal and generating a self refresh signal of temperature compensated cycle under the control of the comparison result signal.
TW095136292A 2005-09-29 2006-09-29 Memory device with self refresh cycle control function TWI337356B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20050090913 2005-09-29
KR1020060049122A KR100799102B1 (en) 2005-09-29 2006-05-31 Memory device with temperature compensated self refresh cycle

Publications (2)

Publication Number Publication Date
TW200729208A true TW200729208A (en) 2007-08-01
TWI337356B TWI337356B (en) 2011-02-11

Family

ID=38158769

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095136292A TWI337356B (en) 2005-09-29 2006-09-29 Memory device with self refresh cycle control function

Country Status (2)

Country Link
KR (1) KR100799102B1 (en)
TW (1) TWI337356B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI449889B (en) * 2012-08-13 2014-08-21 Univ Nat Taiwan Temperature sensing apparatus and methods

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100892723B1 (en) 2007-11-19 2009-04-10 주식회사 하이닉스반도체 Digital temperature information generator of semiconductor integrated circuit
KR100909224B1 (en) * 2008-01-28 2009-07-23 (주)이엠엘에스아이 Temperature compensating self refresh control circuit having tolerance to manufacturing condition
KR100949271B1 (en) 2008-09-05 2010-03-25 주식회사 하이닉스반도체 On die thermal sensor suitable for auto self refresh, integrated circuit with the same and method for on die thermal sensor suitable for auto self refresh
TWI475562B (en) * 2012-06-07 2015-03-01 Elite Semiconductor Esmt Semiconductor memory device with self-refresh timing circuit
JP6779816B2 (en) * 2017-03-21 2020-11-04 キオクシア株式会社 Semiconductor storage device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0129197B1 (en) * 1994-04-21 1998-10-01 문정환 A refresh control circuit of memory cell array
JP4021643B2 (en) 2001-10-29 2007-12-12 富士通株式会社 Semiconductor device with temperature detection function
DE10214103A1 (en) 2002-03-28 2003-10-23 Infineon Technologies Ag Oscillator with adjustable temperature gradients of reference voltage and virtual ground has comparator that outputs memory cell refresh signal if capacitor voltage exceeds reference potential
JP2005222574A (en) 2004-02-03 2005-08-18 Renesas Technology Corp Semiconductor memory device
KR101096207B1 (en) * 2005-03-31 2011-12-23 주식회사 하이닉스반도체 Temperature compensated self refresh circuit
KR20060118733A (en) * 2005-05-17 2006-11-24 주식회사 하이닉스반도체 Temperature compensation oscillator of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI449889B (en) * 2012-08-13 2014-08-21 Univ Nat Taiwan Temperature sensing apparatus and methods

Also Published As

Publication number Publication date
KR20070036642A (en) 2007-04-03
KR100799102B1 (en) 2008-01-29
TWI337356B (en) 2011-02-11

Similar Documents

Publication Publication Date Title
TW200746163A (en) Semiconductor memory device with temperature sensing device capable of minimizing power consumption in refresh
TW200729208A (en) Memory device with self refresh cycle control function
TW200721088A (en) Touch sensitive display device and method thereof
TW200617986A (en) Memory devices configured to detect failure of temperature sensors thereof and methods of operating and testing same
TW200717534A (en) Semiconductor device
WO2005050654A3 (en) Back-bias voltage generator with temperature control
EP2120109A3 (en) Electronic device and method providing improved management of multiple times from multiple time zones
TW200625327A (en) Self refresh circuit of PSRAM for real access time measurement and operating method for the same
TW200604676A (en) Display device and driving device for a light source
TW200705445A (en) Sensing circuit for multi-level flash memory
TW200619950A (en) Memory command delay balancing in a daisy-chained memory topology
KR101559906B1 (en) Method for outputting temperature data in semiconductor memory device and temperature data output circuit therefor
ATE443269T1 (en) TEST-READY INTEGRATED CIRCUIT AND SYSTEM IN ONE PACKAGING
TW200710871A (en) Memory device and tracking circuit
TW200627114A (en) Internal voltage generation control circuit and internal voltage generation circuit using the same
TW200943044A (en) Motherboard with functions of overclocking and overvolting
TW346629B (en) Semiconductor memory device
TW200634502A (en) Semiconductor device with a power down mode
KR101741465B1 (en) pixel circuit and display device including the same
TW200601351A (en) Semiconductor memory device having test mode for data access time
TW200728976A (en) Device and method for controlling refresh rate of memory
DE602007014187D1 (en) DISTRIBUTED CONTROL SYSTEM OF A MEMORY DEVICE
TW200504760A (en) Semiconductor memory device capable of reducing current consumption in active mode
TW200710702A (en) Touch display module and power saving method thereof
TW200511316A (en) Temperature detecting circuit for controlling a self-refresh period of a semiconductor memory device