TW200727532A - Single event transient immune antenna diode circuit - Google Patents

Single event transient immune antenna diode circuit

Info

Publication number
TW200727532A
TW200727532A TW095137387A TW95137387A TW200727532A TW 200727532 A TW200727532 A TW 200727532A TW 095137387 A TW095137387 A TW 095137387A TW 95137387 A TW95137387 A TW 95137387A TW 200727532 A TW200727532 A TW 200727532A
Authority
TW
Taiwan
Prior art keywords
diode circuit
antenna diode
single event
event transient
signal line
Prior art date
Application number
TW095137387A
Other languages
English (en)
Inventor
Roy M Carlson
Keith W Golke
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Publication of TW200727532A publication Critical patent/TW200727532A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
TW095137387A 2006-01-12 2006-10-11 Single event transient immune antenna diode circuit TW200727532A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/330,882 US20070162880A1 (en) 2006-01-12 2006-01-12 Single event transient immune antenna diode circuit

Publications (1)

Publication Number Publication Date
TW200727532A true TW200727532A (en) 2007-07-16

Family

ID=37983533

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095137387A TW200727532A (en) 2006-01-12 2006-10-11 Single event transient immune antenna diode circuit

Country Status (4)

Country Link
US (1) US20070162880A1 (zh)
EP (1) EP1808893A3 (zh)
JP (1) JP2007189191A (zh)
TW (1) TW200727532A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112087144A (zh) * 2020-09-04 2020-12-15 西安电子科技大学 一种宇航用高压二极管抗单粒子烧毁系统级加固方法及电路

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Publication number Priority date Publication date Assignee Title
US7774732B2 (en) * 2007-08-14 2010-08-10 International Business Machines Corporation Method for radiation tolerance by automated placement
US8217458B2 (en) * 2009-12-11 2012-07-10 Honeywell International Inc. Non-aligned antenna effect protection circuit with single event transient hardness
US9013844B2 (en) * 2013-01-15 2015-04-21 Xilinx, Inc. Circuit for and method of enabling the discharge of electric charge in an integrated circuit
US10930646B2 (en) 2017-06-15 2021-02-23 Zero-Error Systems Pte Ltd Circuit and method of forming the same
US11356094B2 (en) 2018-03-19 2022-06-07 Nanyang Technological University Circuit arrangements and methods for forming the same
JP2022178087A (ja) * 2021-05-19 2022-12-02 国立研究開発法人宇宙航空研究開発機構 Ｃｍｏｓ回路

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Publication number Priority date Publication date Assignee Title
US5175605A (en) * 1990-02-05 1992-12-29 Rockwell International Corporation Single event upset hardening circuits, devices and methods
JP3461443B2 (ja) * 1998-04-07 2003-10-27 松下電器産業株式会社 半導体装置、半導体装置の設計方法、記録媒体および半導体装置の設計支援装置
ITTO980556A1 (it) * 1998-06-26 1999-12-26 St Microelectronics Srl Procedimento di fabbricazione di dispositivi integrati con protezione dell'ossido di porta da danni di processo e relativa struttura di
US6329691B1 (en) * 1999-12-13 2001-12-11 Tower Semiconductor Ltd. Device for protection of sensitive gate dielectrics of advanced non-volatile memory devices from damage due to plasma charging
DE19961578A1 (de) * 1999-12-21 2001-06-28 Bosch Gmbh Robert Sensor mit zumindest einer mikromechanischen Struktur und Verfahren zur Herstellung
US6275089B1 (en) * 2000-01-13 2001-08-14 Chartered Semiconductor Manufacturing Ltd. Low voltage controllable transient trigger network for ESD protection
US6501683B2 (en) * 2000-05-19 2002-12-31 Matsushita Electric Co., Ltd. Nonvolatile semiconductor memory device
US6978437B1 (en) * 2000-10-10 2005-12-20 Toppan Photomasks, Inc. Photomask for eliminating antenna effects in an integrated circuit and integrated circuit manufacture with same
US6594809B2 (en) * 2000-11-29 2003-07-15 Taiwan Semiconductor Manufacturing Co., Ltd. Low leakage antenna diode insertion for integrated circuits
US6502229B2 (en) * 2001-03-26 2002-12-31 Oridus, Inc. Method for inserting antenna diodes into an integrated circuit design
EP1265164A3 (en) * 2001-06-04 2009-07-29 Broadcom Corporation Method and apparatus for circuit design
US7103863B2 (en) * 2001-06-08 2006-09-05 Magma Design Automation, Inc. Representing the design of a sub-module in a hierarchical integrated circuit design and analysis system
WO2003021499A1 (en) * 2001-08-29 2003-03-13 Morphics Technology Inc. Integrated circuit chip design
US6794908B2 (en) * 2002-05-31 2004-09-21 Honeywell International Inc. Radiation-hard circuit
US7061734B2 (en) * 2003-02-14 2006-06-13 Visteon Global Technologies, Inc. Class II bus negative transient protection
EP2107680B1 (en) * 2004-02-04 2012-01-25 Japan Aerospace Exploration Agency Single-event-effect tolerant SOI-based data latch device
JP4425707B2 (ja) * 2004-05-25 2010-03-03 Ｎｅｃエレクトロニクス株式会社 半導体装置およびその製造方法
US7265433B2 (en) * 2005-01-13 2007-09-04 International Business Machines Corporation On-pad broadband matching network
US7116606B2 (en) * 2005-01-14 2006-10-03 Macronix International Co., Ltd. Method and circuit of plasma damage protection

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112087144A (zh) * 2020-09-04 2020-12-15 西安电子科技大学 一种宇航用高压二极管抗单粒子烧毁系统级加固方法及电路

Also Published As

Publication number Publication date
EP1808893A3 (en) 2008-05-21
JP2007189191A (ja) 2007-07-26
US20070162880A1 (en) 2007-07-12
EP1808893A2 (en) 2007-07-18

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