TW200727088A - Radiation system and lithographic apparatus - Google Patents
Radiation system and lithographic apparatusInfo
- Publication number
- TW200727088A TW200727088A TW095142867A TW95142867A TW200727088A TW 200727088 A TW200727088 A TW 200727088A TW 095142867 A TW095142867 A TW 095142867A TW 95142867 A TW95142867 A TW 95142867A TW 200727088 A TW200727088 A TW 200727088A
- Authority
- TW
- Taiwan
- Prior art keywords
- radiation
- euv
- spectral filter
- euv source
- radiation system
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
- G21K1/04—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using variable diaphragms, shutters, choppers
- G21K1/043—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using variable diaphragms, shutters, choppers changing time structure of beams by mechanical means, e.g. choppers, spinning filter wheels
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Plasma & Fusion (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- General Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/292,310 US7262423B2 (en) | 2005-12-02 | 2005-12-02 | Radiation system and lithographic apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200727088A true TW200727088A (en) | 2007-07-16 |
Family
ID=37891642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095142867A TW200727088A (en) | 2005-12-02 | 2006-11-20 | Radiation system and lithographic apparatus |
Country Status (9)
Country | Link |
---|---|
US (1) | US7262423B2 (zh) |
EP (1) | EP1793277B1 (zh) |
JP (1) | JP4446996B2 (zh) |
KR (1) | KR100856103B1 (zh) |
CN (1) | CN1975581A (zh) |
AT (1) | ATE445863T1 (zh) |
DE (1) | DE602006009749D1 (zh) |
SG (1) | SG132659A1 (zh) |
TW (1) | TW200727088A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI488544B (zh) * | 2009-04-09 | 2015-06-11 | Asml Netherlands Bv | 用以保護極紫外線(euv)光源腔室免於高壓源材料洩漏之系統與方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7332731B2 (en) * | 2005-12-06 | 2008-02-19 | Asml Netherlands, B.V. | Radiation system and lithographic apparatus |
CN101849212A (zh) * | 2007-11-08 | 2010-09-29 | Asml荷兰有限公司 | 辐射系统和方法以及光谱纯度滤光片 |
US7960701B2 (en) * | 2007-12-20 | 2011-06-14 | Cymer, Inc. | EUV light source components and methods for producing, using and refurbishing same |
DE102008042462B4 (de) * | 2008-09-30 | 2010-11-04 | Carl Zeiss Smt Ag | Beleuchtungssystem für die EUV-Mikrolithographie |
JP5559562B2 (ja) * | 2009-02-12 | 2014-07-23 | ギガフォトン株式会社 | 極端紫外光光源装置 |
US9082521B2 (en) * | 2009-02-13 | 2015-07-14 | Asml Netherlands B.V. | EUV multilayer mirror with interlayer and lithographic apparatus using the mirror |
JP2012209182A (ja) * | 2011-03-30 | 2012-10-25 | Ushio Inc | 極端紫外光光源装置 |
US8791440B1 (en) * | 2013-03-14 | 2014-07-29 | Asml Netherlands B.V. | Target for extreme ultraviolet light source |
US9905323B2 (en) | 2013-03-22 | 2018-02-27 | Deutsches Krebsforschungszentrum | Contour collimator for radiotherapy |
KR20200128275A (ko) * | 2019-05-02 | 2020-11-12 | 삼성전자주식회사 | 반도체 소자의 제조 장치 및 그를 이용한 반도체 소자의 제조 방법 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4408338A (en) | 1981-12-31 | 1983-10-04 | International Business Machines Corporation | Pulsed electromagnetic radiation source having a barrier for discharged debris |
JP4505664B2 (ja) | 2000-03-24 | 2010-07-21 | 株式会社ニコン | X線発生装置 |
JP2003022950A (ja) | 2001-07-05 | 2003-01-24 | Canon Inc | X線光源用デブリ除去装置及び、デブリ除去装置を用いた露光装置 |
EP1349010B1 (en) | 2002-03-28 | 2014-12-10 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI229242B (en) * | 2002-08-23 | 2005-03-11 | Asml Netherlands Bv | Lithographic projection apparatus and particle barrier for use in said apparatus |
JP4235480B2 (ja) | 2002-09-03 | 2009-03-11 | キヤノン株式会社 | 差動排気システム及び露光装置 |
JP2004103773A (ja) * | 2002-09-09 | 2004-04-02 | Nikon Corp | X線発生装置、x線露光装置及びx線フィルター |
WO2005017624A1 (en) * | 2003-08-13 | 2005-02-24 | Philips Intellectual Property & Standards Gmbh | Filter for retaining a substance originating from a radiation source and method for the manufacture of the same |
US7098466B2 (en) * | 2004-06-30 | 2006-08-29 | Intel Corporation | Adjustable illumination source |
-
2005
- 2005-12-02 US US11/292,310 patent/US7262423B2/en not_active Expired - Fee Related
-
2006
- 2006-11-20 DE DE602006009749T patent/DE602006009749D1/de not_active Expired - Fee Related
- 2006-11-20 AT AT06077059T patent/ATE445863T1/de not_active IP Right Cessation
- 2006-11-20 TW TW095142867A patent/TW200727088A/zh unknown
- 2006-11-20 EP EP06077059A patent/EP1793277B1/en not_active Not-in-force
- 2006-11-24 JP JP2006316940A patent/JP4446996B2/ja not_active Expired - Fee Related
- 2006-11-29 SG SG200608340-6A patent/SG132659A1/en unknown
- 2006-12-01 CN CNA2006101630615A patent/CN1975581A/zh active Pending
- 2006-12-01 KR KR1020060120801A patent/KR100856103B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI488544B (zh) * | 2009-04-09 | 2015-06-11 | Asml Netherlands Bv | 用以保護極紫外線(euv)光源腔室免於高壓源材料洩漏之系統與方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1793277A1 (en) | 2007-06-06 |
US20070125963A1 (en) | 2007-06-07 |
KR20070058359A (ko) | 2007-06-08 |
JP2007173792A (ja) | 2007-07-05 |
JP4446996B2 (ja) | 2010-04-07 |
ATE445863T1 (de) | 2009-10-15 |
KR100856103B1 (ko) | 2008-09-02 |
EP1793277B1 (en) | 2009-10-14 |
SG132659A1 (en) | 2007-06-28 |
DE602006009749D1 (de) | 2009-11-26 |
US7262423B2 (en) | 2007-08-28 |
CN1975581A (zh) | 2007-06-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG132659A1 (en) | Radiation system and lithographic apparatus | |
SG133510A1 (en) | Lithographic apparatus and device manufacturing method | |
WO2008039068A3 (en) | Radiation system and lithographic apparatus comprising the same | |
GB2456980A (en) | Euv pellicle with increased euv light transmittance | |
WO2011020599A3 (de) | Verfahren und vorrichtung zur herstellung eines dreidimensionalen objektes | |
WO2016079052A3 (en) | Apparatus | |
EP1726028A4 (en) | PLASMA EUV LIGHT SOURCE PRODUCED BY A LASER WITH HIGH REPLACEMENT RATES | |
EP1851520A4 (en) | LASER PRODUCED PLASMA EUV LIGHT SOURCE | |
WO2008072959A3 (en) | Radiation system and lithographic apparatus | |
WO2012085638A8 (en) | Laser apparatus and extreme ultraviolet light generation system including the laser apparatus | |
SG142289A1 (en) | Lithographic apparatus and method | |
TW200739243A (en) | Microlithography projection optical system, microlithographic tool, method for microlithographic production and microstructured component | |
MY154171A (en) | In-situ cleaning of an imprint lithography tool | |
WO2006075298A3 (en) | Spotlight unit comprising means for adjusting the light beam direction | |
TW200728767A (en) | Laser optical device | |
TW200625500A (en) | Alignment method and apparatus, lithographic apparatus, device manufacturing method, and algnment tool | |
WO2009056765A3 (fr) | Perfectionnement a une porte, permettant de faciliter le reperage de celle-ci | |
MX2018012693A (es) | Dispositivo y procedimiento de marcado laser de una lentilla oftalmica con un pulso laser de longitud de onda y energia por pulsos seleccionados. | |
WO2009028811A8 (en) | Apparatus for measuring three-dimensional profile using lcd | |
ATE424263T1 (de) | Ein plattenförmiges gestell aufweisende vorrichtung zur herstellung eines schnittes, einer falte und dgl. | |
TW200740249A (en) | Projection apparatus provided with an adjustable filtration system and method thereof for adjusting the colour components of a light beam | |
TW200634850A (en) | Working device and working method | |
BRPI0810857A2 (pt) | Meios de posicionamento e método de uso dos mesmos | |
WO2010014850A3 (en) | Apparatus and method including a direct bombardment detector and a secondary detector for use in electron microscopy | |
MY155087A (en) | Energy sources for curing in an imprint lithography system |