TW200718797A - SnO2 sputtering target and process for producing the same - Google Patents
SnO2 sputtering target and process for producing the sameInfo
- Publication number
- TW200718797A TW200718797A TW095141372A TW95141372A TW200718797A TW 200718797 A TW200718797 A TW 200718797A TW 095141372 A TW095141372 A TW 095141372A TW 95141372 A TW95141372 A TW 95141372A TW 200718797 A TW200718797 A TW 200718797A
- Authority
- TW
- Taiwan
- Prior art keywords
- sputtering target
- sno2
- producing
- same
- nb2o5
- Prior art date
Links
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 title abstract 4
- 238000005477 sputtering target Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 2
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
- C04B2235/3265—Mn2O3
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3272—Iron oxides or oxide forming salts thereof, e.g. hematite, magnetite
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3275—Cobalt oxides, cobaltates or cobaltites or oxide forming salts thereof, e.g. bismuth cobaltate, zinc cobaltite
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3279—Nickel oxides, nickalates, or oxide-forming salts thereof
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- C—CHEMISTRY; METALLURGY
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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- C—CHEMISTRY; METALLURGY
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3298—Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5409—Particle size related information expressed by specific surface values
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Disclosed is a high-performance sputtering target having a high relative density which enables to form a sputtered film having both low resistivity and high transmittance at a high film-forming rate while preventing abnormal discharge and generation of particles. Specifically disclosed is a sputtering target which is produced by a process comprising a step wherein an unsintered molded body, which is mainly composed of SnO2 and also contains Nb2O5 and Ta2O5 in an amount of 1.15-10% by mass in total at a mass ratio Nb2O5/Ta2O5 of 0.15-0.90, is sintered at 1550-1650 DEG C.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005324837A JP4851777B2 (en) | 2005-11-09 | 2005-11-09 | SnO2-based sputtering target and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200718797A true TW200718797A (en) | 2007-05-16 |
TWI336731B TWI336731B (en) | 2011-02-01 |
Family
ID=38023233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095141372A TW200718797A (en) | 2005-11-09 | 2006-11-08 | SnO2 sputtering target and process for producing the same |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4851777B2 (en) |
KR (1) | KR100948557B1 (en) |
CN (1) | CN101128618A (en) |
TW (1) | TW200718797A (en) |
WO (1) | WO2007055231A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007142330A1 (en) * | 2006-06-08 | 2007-12-13 | Asahi Glass Company, Limited | Transparent conductive film, process for production of the film, and sputtering target for use in the production of the film |
US7452488B2 (en) | 2006-10-31 | 2008-11-18 | H.C. Starck Inc. | Tin oxide-based sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein |
JP5437919B2 (en) * | 2010-06-04 | 2014-03-12 | 三井金属鉱業株式会社 | ITO sputtering target and manufacturing method thereof |
JP5947413B1 (en) * | 2015-02-13 | 2016-07-06 | Jx金属株式会社 | Sputtering target and manufacturing method thereof |
JP2018206467A (en) * | 2017-05-30 | 2018-12-27 | 株式会社アルバック | Transparent conductive film |
KR20240046818A (en) | 2021-09-01 | 2024-04-09 | 미쓰이금속광업주식회사 | Oxide sintered body and its manufacturing method and sputtering target material |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61256506A (en) * | 1985-05-08 | 1986-11-14 | 工業技術院長 | Low resistance transparent conductive film and generation thereof |
JPH03101202A (en) * | 1989-06-13 | 1991-04-26 | Hitachi Maxell Ltd | Soft magnetic thin film and manufacture thereof |
JP3616128B2 (en) * | 1994-03-27 | 2005-02-02 | グンゼ株式会社 | Method for producing transparent conductive film |
JPH11106217A (en) * | 1997-09-30 | 1999-04-20 | Sumitomo Chem Co Ltd | Production of high-density ito sintered compact and high-density ito sintered compact, and ito sputter target using the same |
JP3636914B2 (en) * | 1998-02-16 | 2005-04-06 | 株式会社日鉱マテリアルズ | High resistance transparent conductive film, method for producing high resistance transparent conductive film, and sputtering target for forming high resistance transparent conductive film |
JP3957917B2 (en) * | 1999-03-26 | 2007-08-15 | 三井金属鉱業株式会社 | Thin film forming materials |
JP4018839B2 (en) * | 1999-03-30 | 2007-12-05 | 三井金属鉱業株式会社 | SnO2-based sintered body, thin film forming material and conductive film |
-
2005
- 2005-11-09 JP JP2005324837A patent/JP4851777B2/en active Active
-
2006
- 2006-11-08 KR KR1020077018540A patent/KR100948557B1/en active IP Right Grant
- 2006-11-08 CN CNA2006800062355A patent/CN101128618A/en active Pending
- 2006-11-08 WO PCT/JP2006/322253 patent/WO2007055231A1/en active Application Filing
- 2006-11-08 TW TW095141372A patent/TW200718797A/en unknown
Also Published As
Publication number | Publication date |
---|---|
TWI336731B (en) | 2011-02-01 |
KR100948557B1 (en) | 2010-03-18 |
KR20070096017A (en) | 2007-10-01 |
CN101128618A (en) | 2008-02-20 |
JP2007131891A (en) | 2007-05-31 |
WO2007055231A1 (en) | 2007-05-18 |
JP4851777B2 (en) | 2012-01-11 |
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