TW200718797A - SnO2 sputtering target and process for producing the same - Google Patents

SnO2 sputtering target and process for producing the same

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Publication number
TW200718797A
TW200718797A TW095141372A TW95141372A TW200718797A TW 200718797 A TW200718797 A TW 200718797A TW 095141372 A TW095141372 A TW 095141372A TW 95141372 A TW95141372 A TW 95141372A TW 200718797 A TW200718797 A TW 200718797A
Authority
TW
Taiwan
Prior art keywords
sputtering target
sno2
producing
same
nb2o5
Prior art date
Application number
TW095141372A
Other languages
Chinese (zh)
Other versions
TWI336731B (en
Inventor
Taizo Morinaka
Original Assignee
Mitsui Mining & Smelting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co filed Critical Mitsui Mining & Smelting Co
Publication of TW200718797A publication Critical patent/TW200718797A/en
Application granted granted Critical
Publication of TWI336731B publication Critical patent/TWI336731B/zh

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3217Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
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    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3225Yttrium oxide or oxide-forming salts thereof
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    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3251Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
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    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3262Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
    • C04B2235/3265Mn2O3
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    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/327Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
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    • C04B2235/327Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
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    • C04B2235/3286Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

Disclosed is a high-performance sputtering target having a high relative density which enables to form a sputtered film having both low resistivity and high transmittance at a high film-forming rate while preventing abnormal discharge and generation of particles. Specifically disclosed is a sputtering target which is produced by a process comprising a step wherein an unsintered molded body, which is mainly composed of SnO2 and also contains Nb2O5 and Ta2O5 in an amount of 1.15-10% by mass in total at a mass ratio Nb2O5/Ta2O5 of 0.15-0.90, is sintered at 1550-1650 DEG C.
TW095141372A 2005-11-09 2006-11-08 SnO2 sputtering target and process for producing the same TW200718797A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005324837A JP4851777B2 (en) 2005-11-09 2005-11-09 SnO2-based sputtering target and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW200718797A true TW200718797A (en) 2007-05-16
TWI336731B TWI336731B (en) 2011-02-01

Family

ID=38023233

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095141372A TW200718797A (en) 2005-11-09 2006-11-08 SnO2 sputtering target and process for producing the same

Country Status (5)

Country Link
JP (1) JP4851777B2 (en)
KR (1) KR100948557B1 (en)
CN (1) CN101128618A (en)
TW (1) TW200718797A (en)
WO (1) WO2007055231A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007142330A1 (en) * 2006-06-08 2007-12-13 Asahi Glass Company, Limited Transparent conductive film, process for production of the film, and sputtering target for use in the production of the film
US7452488B2 (en) 2006-10-31 2008-11-18 H.C. Starck Inc. Tin oxide-based sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein
JP5437919B2 (en) * 2010-06-04 2014-03-12 三井金属鉱業株式会社 ITO sputtering target and manufacturing method thereof
JP5947413B1 (en) * 2015-02-13 2016-07-06 Jx金属株式会社 Sputtering target and manufacturing method thereof
JP2018206467A (en) * 2017-05-30 2018-12-27 株式会社アルバック Transparent conductive film
KR20240046818A (en) 2021-09-01 2024-04-09 미쓰이금속광업주식회사 Oxide sintered body and its manufacturing method and sputtering target material

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61256506A (en) * 1985-05-08 1986-11-14 工業技術院長 Low resistance transparent conductive film and generation thereof
JPH03101202A (en) * 1989-06-13 1991-04-26 Hitachi Maxell Ltd Soft magnetic thin film and manufacture thereof
JP3616128B2 (en) * 1994-03-27 2005-02-02 グンゼ株式会社 Method for producing transparent conductive film
JPH11106217A (en) * 1997-09-30 1999-04-20 Sumitomo Chem Co Ltd Production of high-density ito sintered compact and high-density ito sintered compact, and ito sputter target using the same
JP3636914B2 (en) * 1998-02-16 2005-04-06 株式会社日鉱マテリアルズ High resistance transparent conductive film, method for producing high resistance transparent conductive film, and sputtering target for forming high resistance transparent conductive film
JP3957917B2 (en) * 1999-03-26 2007-08-15 三井金属鉱業株式会社 Thin film forming materials
JP4018839B2 (en) * 1999-03-30 2007-12-05 三井金属鉱業株式会社 SnO2-based sintered body, thin film forming material and conductive film

Also Published As

Publication number Publication date
TWI336731B (en) 2011-02-01
KR100948557B1 (en) 2010-03-18
KR20070096017A (en) 2007-10-01
CN101128618A (en) 2008-02-20
JP2007131891A (en) 2007-05-31
WO2007055231A1 (en) 2007-05-18
JP4851777B2 (en) 2012-01-11

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