TW200718270A - Apparatus for continuous metal deposition for mass production - Google Patents

Apparatus for continuous metal deposition for mass production

Info

Publication number
TW200718270A
TW200718270A TW095137835A TW95137835A TW200718270A TW 200718270 A TW200718270 A TW 200718270A TW 095137835 A TW095137835 A TW 095137835A TW 95137835 A TW95137835 A TW 95137835A TW 200718270 A TW200718270 A TW 200718270A
Authority
TW
Taiwan
Prior art keywords
deposition
boats
chamber
casing
metal
Prior art date
Application number
TW095137835A
Other languages
English (en)
Chinese (zh)
Inventor
Chang-Hun Hwang
Kyoung-Ook Lee
Jeong-Su Ann
Ki-Ju Park
You-Tae Won
Original Assignee
Doosan Dnd Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Doosan Dnd Co Ltd filed Critical Doosan Dnd Co Ltd
Publication of TW200718270A publication Critical patent/TW200718270A/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/246Replenishment of source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
TW095137835A 2005-10-19 2006-10-14 Apparatus for continuous metal deposition for mass production TW200718270A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050098462A KR100697699B1 (ko) 2005-10-19 2005-10-19 양산용 금속박막 연속 증착장치

Publications (1)

Publication Number Publication Date
TW200718270A true TW200718270A (en) 2007-05-01

Family

ID=37962687

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095137835A TW200718270A (en) 2005-10-19 2006-10-14 Apparatus for continuous metal deposition for mass production

Country Status (3)

Country Link
KR (1) KR100697699B1 (ko)
TW (1) TW200718270A (ko)
WO (1) WO2007046623A1 (ko)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62142761A (ja) 1985-12-17 1987-06-26 Matsushita Electric Ind Co Ltd 真空蒸着装置
JPH01184269A (ja) * 1988-01-14 1989-07-21 Toshiba Corp 金属蒸気発生用溶融金属保持装置
JP3863988B2 (ja) 1998-02-06 2006-12-27 株式会社アルバック 蒸着装置
US20040123804A1 (en) * 2002-09-20 2004-07-01 Semiconductor Energy Laboratory Co., Ltd. Fabrication system and manufacturing method of light emitting device
KR100589939B1 (ko) * 2004-02-24 2006-06-19 엘지전자 주식회사 물리적 기상 증착 장치 및 방법

Also Published As

Publication number Publication date
KR100697699B1 (ko) 2007-03-20
WO2007046623A1 (en) 2007-04-26

Similar Documents

Publication Publication Date Title
TW555874B (en) Cylindrical target and its production method
MY134467A (en) Microstructure cooler and use thereof
SG170052A1 (en) An electrolysis apparatus
TW200711029A (en) Substrate processing apparatus and substrate stage used therein
TW200624578A (en) Deposition source and deposition apparatus including deposition source
MY151477A (en) Apparatus for an optimized plasma chamber grounded electrode assembly
USD609770S1 (en) Rail mounting apparatus
TW200739686A (en) Method for seed film formation, plasma film forming apparatus, and memory medium
TW200741434A (en) Cooling apparatus and method employing discrete cold plates disposed between a module enclosure and electronics components to be cooled
TW200732490A (en) Sputtering with cooled target
TW200710253A (en) Integrated metrology tools for monitoring and controlling large area substrate processing chambers
TW200506105A (en) Improved tin plating method
WO2006087690A3 (en) A cooling device
HK1038332A1 (en) Temperature coltrol method and apparatus.
TW200741854A (en) Upper electrode, plasma processing apparatus, and plasma processing method
TW200704799A (en) Sputtering target
TW200706373A (en) Display surface material and a display incorporating the same
TW200642562A (en) Housing of projection apparatus
TW200746350A (en) Wafer holder, method for producing the same and semiconductor production apparatus
CN111164234B (zh) 用于进行高效低温涂覆的涂覆设备
EP1672086A4 (en) HIGH-PURITY NI-V ALLOY, TARGET COMPOSED THEREOF, THIN FILM OF HIGH-PURITY NI-V ALLOY, AND PROCESS FOR PRODUCING SAID ALLOY
TW200510558A (en) Sputtering target and method for finishing surface of such target
CA2444096A1 (en) Externally cooled moving mold
TW200718270A (en) Apparatus for continuous metal deposition for mass production
TW200734478A (en) Sheet plasma film forming apparatus