TW200718270A - Apparatus for continuous metal deposition for mass production - Google Patents

Apparatus for continuous metal deposition for mass production

Info

Publication number
TW200718270A
TW200718270A TW095137835A TW95137835A TW200718270A TW 200718270 A TW200718270 A TW 200718270A TW 095137835 A TW095137835 A TW 095137835A TW 95137835 A TW95137835 A TW 95137835A TW 200718270 A TW200718270 A TW 200718270A
Authority
TW
Taiwan
Prior art keywords
deposition
boats
chamber
casing
metal
Prior art date
Application number
TW095137835A
Other languages
Chinese (zh)
Inventor
Chang-Hun Hwang
Kyoung-Ook Lee
Jeong-Su Ann
Ki-Ju Park
You-Tae Won
Original Assignee
Doosan Dnd Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Doosan Dnd Co Ltd filed Critical Doosan Dnd Co Ltd
Publication of TW200718270A publication Critical patent/TW200718270A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Disclosed herein is an apparatus for continuous metal deposition. The apparatus comprises at least one casing 20 located on a bottom surface of a deposition chamber, two or more metal boats 30 received in the casing, and a cooling unit to cool the casing 20 and the metal boats 30. Specifically, the chamber is provided with a pair of casings 20, each of which has four metal boats 30 received therein. The apparatus further comprises a transfer unit to horizontally move the casings 20 within the chamber. The apparatus enables continuous deposition of a metallic thin film without destroying vacuum of the deposition chamber for replacement of the boats.
TW095137835A 2005-10-19 2006-10-14 Apparatus for continuous metal deposition for mass production TW200718270A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050098462A KR100697699B1 (en) 2005-10-19 2005-10-19 Apparatus for continuous metal deposition process in OLED manufacturing

Publications (1)

Publication Number Publication Date
TW200718270A true TW200718270A (en) 2007-05-01

Family

ID=37962687

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095137835A TW200718270A (en) 2005-10-19 2006-10-14 Apparatus for continuous metal deposition for mass production

Country Status (3)

Country Link
KR (1) KR100697699B1 (en)
TW (1) TW200718270A (en)
WO (1) WO2007046623A1 (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62142761A (en) 1985-12-17 1987-06-26 Matsushita Electric Ind Co Ltd Vacuum deposition device
JPH01184269A (en) * 1988-01-14 1989-07-21 Toshiba Corp Molten metal holder for generating metal vapor
JP3863988B2 (en) 1998-02-06 2006-12-27 株式会社アルバック Vapor deposition equipment
US20040123804A1 (en) * 2002-09-20 2004-07-01 Semiconductor Energy Laboratory Co., Ltd. Fabrication system and manufacturing method of light emitting device
KR100589939B1 (en) * 2004-02-24 2006-06-19 엘지전자 주식회사 Apparatus and method for physical vapor deposition

Also Published As

Publication number Publication date
KR100697699B1 (en) 2007-03-20
WO2007046623A1 (en) 2007-04-26

Similar Documents

Publication Publication Date Title
TW555874B (en) Cylindrical target and its production method
MY134467A (en) Microstructure cooler and use thereof
SG170052A1 (en) An electrolysis apparatus
TW200711029A (en) Substrate processing apparatus and substrate stage used therein
TW200624578A (en) Deposition source and deposition apparatus including deposition source
MY151477A (en) Apparatus for an optimized plasma chamber grounded electrode assembly
USD609770S1 (en) Rail mounting apparatus
TW200739686A (en) Method for seed film formation, plasma film forming apparatus, and memory medium
TW200741434A (en) Cooling apparatus and method employing discrete cold plates disposed between a module enclosure and electronics components to be cooled
TW200732490A (en) Sputtering with cooled target
TW200710253A (en) Integrated metrology tools for monitoring and controlling large area substrate processing chambers
TW200506105A (en) Improved tin plating method
WO2006087690A3 (en) A cooling device
HK1038332A1 (en) Temperature coltrol method and apparatus.
TW200741854A (en) Upper electrode, plasma processing apparatus, and plasma processing method
TW200704799A (en) Sputtering target
TW200706373A (en) Display surface material and a display incorporating the same
TW200642562A (en) Housing of projection apparatus
TW200746350A (en) Wafer holder, method for producing the same and semiconductor production apparatus
CN111164234B (en) Coating device for efficient low-temperature coating
EP1672086A4 (en) HIGH-PURITY Ni-V ALLOY, TARGET THEREFROM, HIGH-PURITY Ni-V ALLOY THIN FILM AND PROCESS FOR PRODUCING HIGH-PURITY Ni-V ALLOY
TW200510558A (en) Sputtering target and method for finishing surface of such target
CA2444096A1 (en) Externally cooled moving mold
TW200718270A (en) Apparatus for continuous metal deposition for mass production
TW200734478A (en) Sheet plasma film forming apparatus