TW200717720A - Method for fabricating nonvolatile memory array - Google Patents
Method for fabricating nonvolatile memory arrayInfo
- Publication number
- TW200717720A TW200717720A TW094136133A TW94136133A TW200717720A TW 200717720 A TW200717720 A TW 200717720A TW 094136133 A TW094136133 A TW 094136133A TW 94136133 A TW94136133 A TW 94136133A TW 200717720 A TW200717720 A TW 200717720A
- Authority
- TW
- Taiwan
- Prior art keywords
- gate
- nonvolatile memory
- memory array
- fabricating nonvolatile
- forming
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
A method for fabricating nonvolatile memory array is disclosed, which comprises the steps of: providing a substrate with at least a pair of gate structures thereon, wherein each of the gate structure comprises a controlling gate overlying a floating gate; forming a conductive spacer on the sidewall of each gate structure; forming a mask covering the gate structures and the conductive spacer, so as to expose a bitline contact region between the gate structures; and removing defects on the bitline contact region by etching.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94136133A TWI281232B (en) | 2005-10-17 | 2005-10-17 | Method for fabricating nonvolatile memory array |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94136133A TWI281232B (en) | 2005-10-17 | 2005-10-17 | Method for fabricating nonvolatile memory array |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200717720A true TW200717720A (en) | 2007-05-01 |
TWI281232B TWI281232B (en) | 2007-05-11 |
Family
ID=38741662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94136133A TWI281232B (en) | 2005-10-17 | 2005-10-17 | Method for fabricating nonvolatile memory array |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI281232B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI500085B (en) * | 2012-12-25 | 2015-09-11 | Hitachi High Tech Corp | Manufacturing method of semiconductor device |
US11362099B2 (en) | 2020-02-20 | 2022-06-14 | Powerchip Semiconductor Manufacturing Corporation | Non-volatile memory device and manufacturing method thereof |
CN117915663A (en) * | 2024-03-20 | 2024-04-19 | 合肥晶合集成电路股份有限公司 | Flash memory and manufacturing method thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI745919B (en) * | 2020-04-08 | 2021-11-11 | 旺宏電子股份有限公司 | Memory device |
-
2005
- 2005-10-17 TW TW94136133A patent/TWI281232B/en active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI500085B (en) * | 2012-12-25 | 2015-09-11 | Hitachi High Tech Corp | Manufacturing method of semiconductor device |
US11362099B2 (en) | 2020-02-20 | 2022-06-14 | Powerchip Semiconductor Manufacturing Corporation | Non-volatile memory device and manufacturing method thereof |
TWI775049B (en) * | 2020-02-20 | 2022-08-21 | 力晶積成電子製造股份有限公司 | Non-volatile memory device and manufacturing method thereof |
CN117915663A (en) * | 2024-03-20 | 2024-04-19 | 合肥晶合集成电路股份有限公司 | Flash memory and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
TWI281232B (en) | 2007-05-11 |
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