TW200717720A - Method for fabricating nonvolatile memory array - Google Patents

Method for fabricating nonvolatile memory array

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Publication number
TW200717720A
TW200717720A TW094136133A TW94136133A TW200717720A TW 200717720 A TW200717720 A TW 200717720A TW 094136133 A TW094136133 A TW 094136133A TW 94136133 A TW94136133 A TW 94136133A TW 200717720 A TW200717720 A TW 200717720A
Authority
TW
Taiwan
Prior art keywords
gate
nonvolatile memory
memory array
fabricating nonvolatile
forming
Prior art date
Application number
TW094136133A
Other languages
Chinese (zh)
Other versions
TWI281232B (en
Inventor
Min-Liang Chen
Chia-Shun Hsiao
Hung-Kwei Liao
Ching-Hung Fu
Original Assignee
Promos Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Promos Technologies Inc filed Critical Promos Technologies Inc
Priority to TW94136133A priority Critical patent/TWI281232B/en
Publication of TW200717720A publication Critical patent/TW200717720A/en
Application granted granted Critical
Publication of TWI281232B publication Critical patent/TWI281232B/en

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

A method for fabricating nonvolatile memory array is disclosed, which comprises the steps of: providing a substrate with at least a pair of gate structures thereon, wherein each of the gate structure comprises a controlling gate overlying a floating gate; forming a conductive spacer on the sidewall of each gate structure; forming a mask covering the gate structures and the conductive spacer, so as to expose a bitline contact region between the gate structures; and removing defects on the bitline contact region by etching.
TW94136133A 2005-10-17 2005-10-17 Method for fabricating nonvolatile memory array TWI281232B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94136133A TWI281232B (en) 2005-10-17 2005-10-17 Method for fabricating nonvolatile memory array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94136133A TWI281232B (en) 2005-10-17 2005-10-17 Method for fabricating nonvolatile memory array

Publications (2)

Publication Number Publication Date
TW200717720A true TW200717720A (en) 2007-05-01
TWI281232B TWI281232B (en) 2007-05-11

Family

ID=38741662

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94136133A TWI281232B (en) 2005-10-17 2005-10-17 Method for fabricating nonvolatile memory array

Country Status (1)

Country Link
TW (1) TWI281232B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI500085B (en) * 2012-12-25 2015-09-11 Hitachi High Tech Corp Manufacturing method of semiconductor device
US11362099B2 (en) 2020-02-20 2022-06-14 Powerchip Semiconductor Manufacturing Corporation Non-volatile memory device and manufacturing method thereof
CN117915663A (en) * 2024-03-20 2024-04-19 合肥晶合集成电路股份有限公司 Flash memory and manufacturing method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI745919B (en) * 2020-04-08 2021-11-11 旺宏電子股份有限公司 Memory device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI500085B (en) * 2012-12-25 2015-09-11 Hitachi High Tech Corp Manufacturing method of semiconductor device
US11362099B2 (en) 2020-02-20 2022-06-14 Powerchip Semiconductor Manufacturing Corporation Non-volatile memory device and manufacturing method thereof
TWI775049B (en) * 2020-02-20 2022-08-21 力晶積成電子製造股份有限公司 Non-volatile memory device and manufacturing method thereof
CN117915663A (en) * 2024-03-20 2024-04-19 合肥晶合集成电路股份有限公司 Flash memory and manufacturing method thereof

Also Published As

Publication number Publication date
TWI281232B (en) 2007-05-11

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