WO2008099700A1 - Double gate transistor, method for manufacturing the same, and active matrix substrate comprising double gate transistor - Google Patents

Double gate transistor, method for manufacturing the same, and active matrix substrate comprising double gate transistor Download PDF

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Publication number
WO2008099700A1
WO2008099700A1 PCT/JP2008/051757 JP2008051757W WO2008099700A1 WO 2008099700 A1 WO2008099700 A1 WO 2008099700A1 JP 2008051757 W JP2008051757 W JP 2008051757W WO 2008099700 A1 WO2008099700 A1 WO 2008099700A1
Authority
WO
WIPO (PCT)
Prior art keywords
gate transistor
double gate
forming
semiconductor layer
manufacturing
Prior art date
Application number
PCT/JP2008/051757
Other languages
French (fr)
Japanese (ja)
Inventor
Hidehito Kitakado
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Publication of WO2008099700A1 publication Critical patent/WO2008099700A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)

Abstract

Disclosed is a method for manufacturing a double gate transistor (100), which comprises a step for forming a bottom gate electrode (110), a step for forming a first gate insulating film (120) covering the bottom gate electrode (110), a step for forming a semiconductor layer facing the bottom gate electrode (110) through the first gate insulating film (120), a step for obtaining a crystalline semiconductor layer (130) by irradiating the semiconductor layer with a laser beam, a step for forming a second gate insulating film (140) covering the crystalline semiconductor layer (130), and a step for forming a top gate electrode (150) facing the crystalline semiconductor layer (130) through the second gate insulating film (140). The bottom gate electrode (110) has a surface composed of a conductive metal oxide.
PCT/JP2008/051757 2007-02-16 2008-02-04 Double gate transistor, method for manufacturing the same, and active matrix substrate comprising double gate transistor WO2008099700A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007035929 2007-02-16
JP2007-035929 2007-02-16

Publications (1)

Publication Number Publication Date
WO2008099700A1 true WO2008099700A1 (en) 2008-08-21

Family

ID=39689944

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051757 WO2008099700A1 (en) 2007-02-16 2008-02-04 Double gate transistor, method for manufacturing the same, and active matrix substrate comprising double gate transistor

Country Status (1)

Country Link
WO (1) WO2008099700A1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010113312A1 (en) * 2009-04-02 2010-10-07 パイオニア株式会社 Display device
JP2015130511A (en) * 2009-07-18 2015-07-16 株式会社半導体エネルギー研究所 semiconductor device
WO2017179504A1 (en) * 2016-04-15 2017-10-19 シャープ株式会社 Thin film transistor
JP2021129352A (en) * 2020-02-12 2021-09-02 シチズン時計株式会社 Electromechanical transducer
CN113447858A (en) * 2020-11-11 2021-09-28 重庆康佳光电技术研究院有限公司 Circuit backboard detection device and detection method
JP2023014101A (en) * 2009-09-04 2023-01-26 株式会社半導体エネルギー研究所 Light-emitting device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10209467A (en) * 1997-01-24 1998-08-07 Sony Corp Thin film semiconductor device
JP2002033481A (en) * 2000-07-14 2002-01-31 Sony Corp Thin-film semiconductor device
JP2002367905A (en) * 2001-04-06 2002-12-20 Seiko Epson Corp Method of manufacturing thin film semiconductor device
JP2003273361A (en) * 2002-03-15 2003-09-26 Sharp Corp Semiconductor device and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10209467A (en) * 1997-01-24 1998-08-07 Sony Corp Thin film semiconductor device
JP2002033481A (en) * 2000-07-14 2002-01-31 Sony Corp Thin-film semiconductor device
JP2002367905A (en) * 2001-04-06 2002-12-20 Seiko Epson Corp Method of manufacturing thin film semiconductor device
JP2003273361A (en) * 2002-03-15 2003-09-26 Sharp Corp Semiconductor device and manufacturing method thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010113312A1 (en) * 2009-04-02 2010-10-07 パイオニア株式会社 Display device
JP2015130511A (en) * 2009-07-18 2015-07-16 株式会社半導体エネルギー研究所 semiconductor device
JP2023014101A (en) * 2009-09-04 2023-01-26 株式会社半導体エネルギー研究所 Light-emitting device
JP7480255B2 (en) 2009-09-04 2024-05-09 株式会社半導体エネルギー研究所 Light-emitting device
WO2017179504A1 (en) * 2016-04-15 2017-10-19 シャープ株式会社 Thin film transistor
JP2021129352A (en) * 2020-02-12 2021-09-02 シチズン時計株式会社 Electromechanical transducer
JP7408431B2 (en) 2020-02-12 2024-01-05 シチズン時計株式会社 electromechanical converter
CN113447858A (en) * 2020-11-11 2021-09-28 重庆康佳光电技术研究院有限公司 Circuit backboard detection device and detection method

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