TW200717667A - Wet etching apparatus and controlling method of etching rate of polycrystalline silicon - Google Patents
Wet etching apparatus and controlling method of etching rate of polycrystalline siliconInfo
- Publication number
- TW200717667A TW200717667A TW094137593A TW94137593A TW200717667A TW 200717667 A TW200717667 A TW 200717667A TW 094137593 A TW094137593 A TW 094137593A TW 94137593 A TW94137593 A TW 94137593A TW 200717667 A TW200717667 A TW 200717667A
- Authority
- TW
- Taiwan
- Prior art keywords
- storage tank
- wet etching
- etching apparatus
- polycrystalline silicon
- controlling method
- Prior art date
Links
Abstract
A wet etching apparatus is provided. The wet etching apparatus comprises a circulating system, an etching tank, a second water supply pipe, a temperature controller, an ammonia storage tank and a hydrogen peroxide storage tank. The circulating system comprises a water storage tank, a first water supply pipe, a circulating reflux pipe, a pump and a temperature adjusted unit. The temperature adjusted unit is used to adjust the temperature of the pure water in the water storage tank so as to control the dissolved nitrogen content in the pure water.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94137593A TWI284943B (en) | 2005-10-27 | 2005-10-27 | Wet etching apparatus and controlling method of etching rate of polycrystalline silicon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94137593A TWI284943B (en) | 2005-10-27 | 2005-10-27 | Wet etching apparatus and controlling method of etching rate of polycrystalline silicon |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200717667A true TW200717667A (en) | 2007-05-01 |
TWI284943B TWI284943B (en) | 2007-08-01 |
Family
ID=39446024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94137593A TWI284943B (en) | 2005-10-27 | 2005-10-27 | Wet etching apparatus and controlling method of etching rate of polycrystalline silicon |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI284943B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104681421A (en) * | 2013-11-27 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | Method for improving wet-process etching efficiency |
CN111489959A (en) * | 2020-05-22 | 2020-08-04 | 北京北方华创微电子装备有限公司 | Semiconductor cleaning equipment |
-
2005
- 2005-10-27 TW TW94137593A patent/TWI284943B/en not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104681421A (en) * | 2013-11-27 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | Method for improving wet-process etching efficiency |
CN104681421B (en) * | 2013-11-27 | 2017-11-10 | 中芯国际集成电路制造(上海)有限公司 | A kind of method for improving wet etching efficiency |
CN111489959A (en) * | 2020-05-22 | 2020-08-04 | 北京北方华创微电子装备有限公司 | Semiconductor cleaning equipment |
CN111489959B (en) * | 2020-05-22 | 2023-11-14 | 北京北方华创微电子装备有限公司 | Semiconductor cleaning equipment |
Also Published As
Publication number | Publication date |
---|---|
TWI284943B (en) | 2007-08-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |