TW200717667A - Wet etching apparatus and controlling method of etching rate of polycrystalline silicon - Google Patents

Wet etching apparatus and controlling method of etching rate of polycrystalline silicon

Info

Publication number
TW200717667A
TW200717667A TW094137593A TW94137593A TW200717667A TW 200717667 A TW200717667 A TW 200717667A TW 094137593 A TW094137593 A TW 094137593A TW 94137593 A TW94137593 A TW 94137593A TW 200717667 A TW200717667 A TW 200717667A
Authority
TW
Taiwan
Prior art keywords
storage tank
wet etching
etching apparatus
polycrystalline silicon
controlling method
Prior art date
Application number
TW094137593A
Other languages
Chinese (zh)
Other versions
TWI284943B (en
Inventor
Chien-Hsing Tu
Rui-Hui Wen
Original Assignee
Powerchip Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Powerchip Semiconductor Corp filed Critical Powerchip Semiconductor Corp
Priority to TW94137593A priority Critical patent/TWI284943B/en
Publication of TW200717667A publication Critical patent/TW200717667A/en
Application granted granted Critical
Publication of TWI284943B publication Critical patent/TWI284943B/en

Links

Abstract

A wet etching apparatus is provided. The wet etching apparatus comprises a circulating system, an etching tank, a second water supply pipe, a temperature controller, an ammonia storage tank and a hydrogen peroxide storage tank. The circulating system comprises a water storage tank, a first water supply pipe, a circulating reflux pipe, a pump and a temperature adjusted unit. The temperature adjusted unit is used to adjust the temperature of the pure water in the water storage tank so as to control the dissolved nitrogen content in the pure water.
TW94137593A 2005-10-27 2005-10-27 Wet etching apparatus and controlling method of etching rate of polycrystalline silicon TWI284943B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94137593A TWI284943B (en) 2005-10-27 2005-10-27 Wet etching apparatus and controlling method of etching rate of polycrystalline silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94137593A TWI284943B (en) 2005-10-27 2005-10-27 Wet etching apparatus and controlling method of etching rate of polycrystalline silicon

Publications (2)

Publication Number Publication Date
TW200717667A true TW200717667A (en) 2007-05-01
TWI284943B TWI284943B (en) 2007-08-01

Family

ID=39446024

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94137593A TWI284943B (en) 2005-10-27 2005-10-27 Wet etching apparatus and controlling method of etching rate of polycrystalline silicon

Country Status (1)

Country Link
TW (1) TWI284943B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104681421A (en) * 2013-11-27 2015-06-03 中芯国际集成电路制造(上海)有限公司 Method for improving wet-process etching efficiency
CN111489959A (en) * 2020-05-22 2020-08-04 北京北方华创微电子装备有限公司 Semiconductor cleaning equipment

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104681421A (en) * 2013-11-27 2015-06-03 中芯国际集成电路制造(上海)有限公司 Method for improving wet-process etching efficiency
CN104681421B (en) * 2013-11-27 2017-11-10 中芯国际集成电路制造(上海)有限公司 A kind of method for improving wet etching efficiency
CN111489959A (en) * 2020-05-22 2020-08-04 北京北方华创微电子装备有限公司 Semiconductor cleaning equipment
CN111489959B (en) * 2020-05-22 2023-11-14 北京北方华创微电子装备有限公司 Semiconductor cleaning equipment

Also Published As

Publication number Publication date
TWI284943B (en) 2007-08-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees