128491 f.doc/r 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種半導體裝置與半導體製程，且特 別是有關於一種濕式蝕刻裴置以及控制多晶矽蝕刻率的方 法。 【先前技術】 近年來，半導體工業發展快速，其在製造技術上已將 晶圓尺寸由八忖擴大為十二时，以提高製程良率、機器使 用率以及節省製程成本。然而，十二对晶圓薇與八口寸晶圓 廠在製造设備上的需求不盡相同，且亦無法將既有之八对 晶圓庭的製程技術轉移至十二吋晶圓廠使用。 目前，在十二对晶圓座的製程上常會出現-些製程上 的異常，而無法克服。舉例來說，在多晶賴刻製程方面， -般是以餘刻液(氨水/雙氧水/水)進行濕式姓刻製程，但 二叶晶11賴廠義超純水驗之要求及機纟使設 率ίί接:成其多晶侧率較8吁晶圓廉的 夕曰曰㈣刻率為快，進而嚴重影響到製程的可靠度與良率。 fi題為j 十二忖晶赚的多晶独刻率異常之 刻率’但是此種方法會造成氨水使用量增加， 的處理成本。 亚徒回廢液 产…一般而言，银刻液中的水溶液是使用超純水，而通當 程序以過濾超純水中的2仃一連串的預處理 的_負。另外，在超純水製造過程中， 5 12849獻㈤r 為避免超純水與空氣接觸進而污染超純水水質 統，於密閉系統製造及供應，而在超純水儲存緩衝槽内 通常會通入精製氮氣(n2)用以封存。於改善 常之問題的期間，操作人員= 備脫軋朕(Membrane Degasifler)模組 =的讎大，脫氣膜模组的作用^ 洛乳(d1SS〇lved oxygen)。在多晶矽蝕刻製程中 f呈條件’而僅改變是否使用脫氣賴_條件下，若啟 約权組:則超純水中的溶氧量約為2卯b，溶氮量 A/;in; ，多晶 慢。 錢里的夕春會影響多晶石夕钱刻率的快 上述之發現有助於操作人g ::刻率的目的，因此如何能约 成為目前半導體製程發展的重點之一。 夕侧革已 【發明内容】 置，ίίϊί/f 的就是在提供一種濕式钱刻裝 I，以有效控制多晶魏刻率。 ㈣赵，，、屯水之減 128494¾^ 本發明的另-目岐提供—種控制多晶抑刻率的 控制製程末端超 刻样本式#刻裝置’其包括循環系統、钱 ^ "罘一ί、水官路、溫度控制器、第一儲存槽以及 =槽。其中，循環系統包括用以承裝已進行脫氧、充氮 ?序之純，儲水槽、連接儲水槽之第-供水管路、連接 =改t水轉無水槽之循環回流管路、配置於第一供水 =路上之泵浦m度驢單元。上述， 二己回流管路上，其係用以調整循環系 儲水槽中純水之溶氮量。另外，_槽是 承衣濕式侧製程中所使用之_混合液，而第二供 環^之第—供水管路與㈣槽。溫度控制 在、商^弟—供水官路上’其係用以控制純水之溫度維持 ΐ適=反應溫度。第-儲存槽’用以承裝-氨水溶 二=氨ΐ溶液輸_刻槽中。第 將雙氧水溶液輸送液’亚猎由第二進料管路 依照本發明的實施例所述，上述 揭環回流管路上，且位於溫度調整單元:栗=配置於 第-貫施例所述，上述之第二控制閥配置於 仏水目路上’且位於溫度控制ϋ與泵浦之間。 於錯發明的實施例所述，更包括排氣閥，其是配置 7 1284端_ 至少-"Tj㈣的實施綱述’上述之溫度纏單元包括 ΐ;哭至少一冷卻器以及溫度感測器，其中溫度 感劂π疋用以感測儲水槽中之純水之溫度。 連接ΐΐί發Γ的實施例所述，更包括二水供應管路， 钇，/、係用以供應純水至儲水槽中。 依照本發明的實施例所述，上 加熱器、-冷卻器或其組合。Κ皿度㈣益包括一 ^明，出—種控制多晶軸刻率的方法’此方法 (b)利二循氧、充氮程序之純水注人循環系統中。 护制〜控舰水之溶氮量在—溶H定值。（C)將已 j 之純水輸送錄刻槽中，並控制純水之溫度在 將氨水溶液與雙氧水溶液輸送絲 具有多晶石夕層的-晶圓置入蝴曹 p /了m而得到—_率。若钱刻率大於- 刻率等於預定之蝕刻率。 （）直到蝕 純水實施卿述，上述之利用循環系統控制 溫度調整包:外 定值的方法包括利用溫度調整H 令亂 溫度，而調低溶氮定值的方====統中純水之 循環系統中純水之溫度。U婦單元調高 依照本發明的實施例所述，上述之將純水注入循環系 統中的方法包括利用一純水供應管路。 輸送述r之將純水由猶環系統 接，將財輪送絲刻=用一供水管路與钱刻槽連 依,、、、本發明的實施例所述’上述之栋純P 在適當的蝕刻反庫ί的二=7这之使純水之溫度維持 之溫度控制器 的方法包括利用配置於供水管路上 水。依照本發_實施例所述，上述之純水例如是超純 水之ίΓ係f祕職置中之溫度觀單元，調整超純 溶=對水之溶氮量也 f’進一步達到有效控制多晶石夕 易懂為和其他上的、特徵和優點能更明顯 下。 貝& 1亚配合所附圖式，作詳細說明如 【實施方式】 氣膜曰Γ钱刻製私中，操作人員由廠務純水供應端脫 石夕餘刻率越慢，相反地 m錢里越夕’則夕曰曰 ^ M ^ M hk η 、、、7中的溶氮量越少，則多晶石夕 有效柝二1 : ΐ ’错由調整純水中的溶氮量’達到 I工制夕晶石夕钱刻率的目的。 圖1為依照本發明實施例崎示之濕式银刻裝置的配128491 f.doc/r IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a semiconductor device and a semiconductor process, and more particularly to a wet etch device and a method of controlling polysilicon etch rate. [Prior Art] In recent years, the semiconductor industry has developed rapidly, and its manufacturing technology has expanded the wafer size from gossip to twelve o'clock to improve process yield, machine utilization, and process cost savings. However, the demand for manufacturing equipment in twelve pairs of wafers and eight-port wafer fabs is not the same, and it is impossible to transfer the existing eight-pair wafer process technology to the twelve-inch wafer fab. . At present, there are often some process anomalies in the process of twelve pairs of wafer holders, which cannot be overcome. For example, in the process of polycrystalline etching, the wet-type engraving process is usually carried out with residual liquid (ammonia/hydrogen peroxide/water), but the requirements and equipment of the two-leaf 11 Laiyi ultra-pure water test The setting rate is ί 接: the polycrystalline side rate is faster than the 吁 曰曰 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四Fi is titled j. The rate of abnormality of polycrystalline singularity earned by twelve crystals is 'but this method will increase the processing cost of ammonia usage. Atomic waste liquid production... In general, the aqueous solution in the silver engraving liquid is ultrapure water, and the routine is used to filter the series of pretreatment _ negative in ultrapure water. In addition, in the process of ultrapure water production, 5 12849 (5) r in order to avoid ultra-pure water contact with air and pollute the ultra-pure water quality system, manufactured and supplied in a closed system, and usually in the ultra-pure water storage buffer tank Refined nitrogen (n2) is used for storage. During the improvement of the usual problems, the operator = Membrane Degasifler module = large, degassing membrane module ^ l1SS〇lved oxygen. In the polysilicon etch process, f is the condition 'and only changes whether or not the degassing lag is used. If the group is activated, the dissolved oxygen in the ultrapure water is about 2 卯b, and the amount of dissolved nitrogen is A/;in; , polycrystalline is slow. The spring of the money will affect the speed of the polycrystalline stone. The above findings are helpful for the purpose of operating the human g::, so how to become one of the current developments in semiconductor manufacturing. Xixia leather has been [invented content] set, ίίϊί / f is to provide a wet money engraving I to effectively control the polycrystalline weave rate. (4) Zhao,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, ί, Shuiguan Road, temperature controller, first storage tank and = tank. The circulation system includes a first water supply line for carrying out deoxidation, nitrogen filling, a water storage tank, and a water supply pipe connected to the water storage tank, and a circulation return line for changing the water to no water tank, and is arranged in the first A water supply = pumping m degree unit on the road. In the above, the two-return line is used to adjust the amount of dissolved nitrogen in the pure water in the circulating water storage tank. In addition, the _ tank is the _ mixed liquid used in the wet side process of the garment, and the second supply ring is the water supply line and the (four) tank. The temperature control is used to control the temperature of pure water to maintain the temperature of the water. The first storage tank is used to hold - ammonia water soluble two = ammonia solution solution in the groove. The first hydrogen peroxide aqueous solution is sub-hunted by the second feed line according to the embodiment of the present invention, the above-mentioned uncovering loop return line, and located in the temperature adjusting unit: the pump is disposed in the first embodiment, The second control valve described above is disposed on the side of the water and is located between the temperature control port and the pump. As described in the embodiment of the invention, there is further included an exhaust valve which is a configuration of the configuration 1 1284 end _ at least -"Tj (4) 'The above temperature entangled unit includes ΐ; crying at least one cooler and temperature sensor The temperature sense 劂π疋 is used to sense the temperature of the pure water in the water storage tank. In connection with the embodiment of the invention, the second water supply line, 钇, /, is used to supply pure water into the water storage tank. In accordance with an embodiment of the invention, an upper heater, a cooler, or a combination thereof. Κ 度 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( The amount of nitrogen dissolved in the control ship is controlled at a constant value of H. (C) transporting the pure water of the j to the recording tank, and controlling the temperature of the pure water to be obtained by placing the ammonia aqueous solution and the aqueous solution of the hydrogen peroxide solution with the polycrystalline stone layer into the wafer. -_rate. If the engraving rate is greater than - the engraving rate is equal to the predetermined etching rate. () Until the implementation of the etched pure water, the above-mentioned method of controlling the temperature adjustment package using the circulation system: the method of setting the external value includes using the temperature adjustment H to make the temperature disorder, and lowering the value of the dissolved nitrogen value ==== The temperature of pure water in the water circulation system. U Women's Unit Height Adjustment In accordance with an embodiment of the present invention, the above method of injecting pure water into a circulation system includes utilizing a pure water supply line. The pure water is conveyed by the Juxuan system, and the cash wheel is sent to the wire. The water supply line is connected with the money groove, and the above-mentioned pure P is suitable in the embodiment of the present invention. The method of etching the anti-accumulator ί 2 = 7 which maintains the temperature of the pure water is controlled by the use of water disposed on the water supply line. According to the embodiment of the present invention, the above-mentioned pure water is, for example, a temperature observation unit in the ultra-pure water, and the ultra-pure solution = the amount of dissolved nitrogen in the water is also f' further effective control. The spar is easy to understand and other features, advantages and advantages can be more obvious. Bay & 1 sub-combination with the drawings, for a detailed description, such as [embodiment] air film money engraving private, the operator from the pure water supply end of the factory, the slower the remaining rate, on the contrary m The more the amount of dissolved nitrogen in the M ^ M hk η , , and 7 is less, the more the polycrystalline stone is effective. 2: ΐ 'The error is adjusted by the amount of dissolved nitrogen in pure water' To achieve the purpose of I work in the evening. 1 is a configuration of a wet silver engraving device according to an embodiment of the present invention.
12849潑twf.d〇c/r 置示意圖。 晴茶照圖1，本發明之濕式餘刻裝置1〇〇包括 統102、|虫刻槽1 〇4、第-供火总狄彳. 衣系 蜜針姚 路106、溫度控制器108、 弟一儲存槽110以及第二儲存槽112。 上，，循環系統1〇2包括儲水槽114、第一供水管 116、循環回流管路118、泵浦12〇以及溫度調整單元1^2。 ，中。，儲水槽114是用以承裝廠務端供應已進行脫氧、充 亂程序之純水，本發明所使用之純水例如是超純水 (ultmpUre water，upw)。第一供水管路116連接儲水槽 114,其係肋將儲水槽114中之純水排出。另外，循環^ 流管路118連接第一供水管路116與儲水槽114，而泵浦 12^配置於第—供水管路116上，藉由啟動泵浦120可將 經第一供水管路116所傳送之純水，再由循環回流管路ιΐ8 回至儲水槽114中。溫度調整單元122配置於循環回 机盲路118上，其係用來調整儲水槽114中的純水之溫度， 以控制儲水槽114中純水的溶氮量。 值传’主思的是’由於氮氣是非極性(non-polar)氣體， 不易溶解於水中，而氮氣的溶解度遵循亨利定律(Henry，s law)和道耳吞定律pait〇n’s iaw)，溶進水的氣體量與水溫 度成反比。而且，由廠務端所供應之純水，無論純水的溫 度n低’其溶氮量都相同，差別在於純水的溫度較高，溶 氮1為過飽和狀態。當純水自廠務端供應至儲水槽114中 時’純水在儲水槽Π4内的溫度高低會影響其飽和溶解 度’而此時過飽和含氮之純水會釋放氮氣至達到水溫之飽 128491,doc/r 和溶解度。亦即是，若溫度越高，則儲水槽114内之純水 洛氮1越少；若溫度越低，則儲水槽114内之純水溶氮量 越多。因此，利用調整純水之溫度，可控制純水中之溶氮 量，進而可有效控制多晶矽蝕刻率。 人 在一實施例中，溫度調整單元122可例如是由加熱器 122a、冷卻器122b以及溫度感測器122c所組成。上述， 利用溫度調整單元122調整儲水槽114中純水的溫度之方 法例如是’切溫度感測器既感測儲水槽114中之純 的溫度，再依實際情況需要選擇啟動加熱器122a，以提言 儲水槽114中純水的溫度，或者是選擇啟動冷卻器咖， 以降低儲水槽114中純水的溫度。當然，上述實施例係以 設置-個加熱器與-個冷卻器反應槽為實例做說明，本 明也可以視實際需要而兩個以上之加熱器以及冷卻器。X 另外，本發明的循環系、統102還包括一排氣闕以， =置於儲水槽m上。當_溫度調整單元122調整儲 二而曰二：Γ:水的溫度時，溶於純水中之氮氣會因溫度提 同而由純水中釋放出來，此時若儲水槽m中之屢力達= :定？，，排牙!閥124會開啟，以咖水槽m中之璧 力。此外，循裱系統102還可包括連接 供應管路126，其係用以供應純水至儲水槽Γ14中。 承上述’蝕刻槽104是用以承裝 用之钱刻混合液，且苴係用來各傲、隹：、、式剌衣程中所使 所。第二供水管路_:==刻=場 …蝴請。另外，溫度控制器：== 11 1284943 17583twf.doc/r &路106上，其係用以控制純水之溫度維持在適當的蝕刻 反應溫度。溫度控制H⑽可例如是加熱器、冷卻器或其 組合。 、、本，明所使用之飿刻混合液為氨水/雙氧水/水 ，因此 上述，第—储存槽11G與第二儲存槽112係分別例如是來 Ϊ衣氨水：液與雙氧水溶液。而且，第-儲存槽110藉由 弟-進料管路128將氨水溶液輪送至⑽槽綱中，第二 二藉ί ί=進料管路13G將雙氧水溶液輸送至· iV鱼-中:貫施例中，如圖1所示，第—進料管路 妾二二?料管路m是分別與第二供水管路刚連 弟一進料管路128與第二進料管路130亦可分 1疋連接，本發明並不對此做制之限定。 第-=例:Γ ’本發明之濕式㈣裝置綱還包括 更包括第二控制閥134，其配J第在::實施例中，還 且位於溫度控制器⑽與泵浦 純水經第-供水管路1! 6排出後，—方ί 114中的 132控制通過流量，並進行溫度制閥 Γ二 1Γ方面，同時將儲存於儲水槽…純t槽 由罘一控制閥134進行流量_ w 中之，、、屯水， 溫度維持麵當的=度控難⑽將其 以下，係說明利用蝴水槽…中。 軸刻率的方法。述之濟式银刻裝置進行控制多晶 12 128494¾ 3twf.doc/r12849 splash twf.d〇c/r set the diagram. According to Fig. 1, the wet type engraving device 1 of the present invention includes a system 102, a insect engraving tank 1 〇 4, a first-supply fire Di Di. a clothing honey needle Yao Road 106, a temperature controller 108, The first storage tank 110 and the second storage tank 112. Above, the circulation system 1〇2 includes a water storage tank 114, a first water supply pipe 116, a circulation return line 118, a pump 12〇, and a temperature adjustment unit 1^2. ,in. The water storage tank 114 is for supplying the pure water which has been subjected to the deoxidation and refrigerating process, and the pure water used in the present invention is, for example, ultrapure water (upwUre water, upw). The first water supply line 116 is connected to the water storage tank 114, and the ribs discharge the pure water in the water storage tank 114. In addition, the circulation line 118 connects the first water supply line 116 and the water storage tank 114, and the pump 12 is disposed on the first water supply line 116. The first water supply line 116 can be passed by starting the pump 120. The pure water that is transferred is returned to the water storage tank 114 by the circulation return line ι8. The temperature adjustment unit 122 is disposed on the circulation return blind 118 for adjusting the temperature of the pure water in the water storage tank 114 to control the amount of dissolved nitrogen in the water storage tank 114. The value of the 'main thinking' is because nitrogen is a non-polar gas, it is not easy to dissolve in water, and the solubility of nitrogen follows Henry's law and pain〇n's iaw. The amount of water in the water is inversely proportional to the temperature of the water. Moreover, the pure water supplied by the factory side, regardless of the temperature of the pure water n, is the same, the difference is that the temperature of the pure water is higher, and the dissolved nitrogen 1 is supersaturated. When pure water is supplied from the factory side to the storage tank 114, 'the temperature of the pure water in the storage tank Π4 will affect its saturated solubility'. At this time, the supersaturated nitrogen-containing pure water will release nitrogen to reach the water temperature of 128491. , doc/r and solubility. That is, if the temperature is higher, the amount of pure water nitrogen in the water storage tank 114 is less; if the temperature is lower, the amount of pure water dissolved in the water storage tank 114 is more. Therefore, by adjusting the temperature of the pure water, the amount of dissolved nitrogen in the pure water can be controlled, and the polysilicon etch rate can be effectively controlled. In one embodiment, the temperature adjustment unit 122 can be comprised, for example, of a heater 122a, a cooler 122b, and a temperature sensor 122c. In the above, the method for adjusting the temperature of the pure water in the water storage tank 114 by using the temperature adjusting unit 122 is, for example, the 'cutting temperature sensor sensing both the pure temperature in the water storage tank 114, and then selecting the starting heater 122a according to actual conditions. The temperature of the pure water in the water storage tank 114 is referred to, or the cooler is selectively activated to lower the temperature of the pure water in the water storage tank 114. Of course, the above embodiment is described by taking a heater and a cooler reaction tank as an example, and it is also possible to use two or more heaters and coolers according to actual needs. Further, the circulation system 102 of the present invention further includes an exhaust gas ,, placed on the water storage tank m. When the temperature adjustment unit 122 adjusts the temperature of the second and the second: Γ: water, the nitrogen dissolved in the pure water is released from the pure water due to the temperature increase, and at this time, if the water storage tank m is repeatedly used Da = : fixed? ,, the teeth! Valve 124 will open, to the pressure in the coffee machine m. In addition, the circulatory system 102 can also include a connection supply line 126 for supplying pure water to the sump 14 . The above-mentioned 'etching groove 104 is used for the preparation of the mixed liquid, and the lanthanum is used in various arrogance, 隹:, and 剌. The second water supply line _:== engraved = field ... butterfly please. In addition, the temperature controller: == 11 1284943 17583twf.doc / r & path 106, which is used to control the temperature of pure water to maintain the appropriate etching reaction temperature. The temperature control H (10) can be, for example, a heater, a cooler, or a combination thereof. In the present invention, the first storage tank 11G and the second storage tank 112 are, for example, a liquid ammonia solution and a hydrogen peroxide aqueous solution, respectively. Moreover, the first storage tank 110 transfers the aqueous ammonia solution to the (10) tank by the di-feed line 128, and the second aqueous carrier 13G delivers the aqueous hydrogen peroxide solution to the iV fish-in: In the embodiment, as shown in FIG. 1 , the first feeding line and the second feeding line m are respectively connected with the second water supply line, a feed line 128 and a second feed line 130. It can also be connected in one step, and the invention is not limited thereto. -=Example: Γ 'The wet (four) device of the present invention further includes a second control valve 134, which is equipped with the following: in the embodiment, and is located in the temperature controller (10) and the pumped pure water - After the water supply line 1! 6 is discharged, the 132 in the square 145 controls the flow rate and performs the temperature control valve Γ2Γ, and will be stored in the water storage tank... The pure t tank is flown by the first control valve 134 _ In the w, the water temperature, the temperature is maintained, the degree is difficult to control (10), and the following is used to illustrate the use of the butterfly sink. The method of the axial engraving rate. The Ji-style silver engraving device controls the polycrystalline 12 1284943⁄4 3twf.doc/r
圖2為依照本發明實施例所緣示之控制多晶石夕餘刻率 的方法之步驟流程圖。 X 請同時參照圖1與圖2,首先將純水注入循環系統1〇2 中（步驟200)。上述之純水為已進行脫氧、充氮程序之純 水，其可例如是超純水。另外，上述將純水注入循環系統 102中之方法為利用一純水供應管路126，將純水注入到 银糸統102中。2 is a flow chart showing the steps of a method for controlling the polylithic rate in accordance with an embodiment of the present invention. X Referring to Fig. 1 and Fig. 2 simultaneously, pure water is first injected into the circulation system 1〇2 (step 200). The pure water described above is pure water which has been subjected to a deoxidation and nitrogen charging process, and may be, for example, ultrapure water. Further, the above method of injecting pure water into the circulation system 102 is to inject pure water into the crucible 102 by using a pure water supply line 126.
然後，利用循環系統102來控制純水的溶氮量在一定 值(Y驟210)。自於，氮氣的飽和溶解度與純水的溫度成反 比。亦即是，絲水的溫度越高，f路中純水氮氣飽和溶 解度越低；若純水的溫度越低，管路中純水氮氣飽和溶解 度越局。因此，在儲水槽⑴裝置中，氮氣之飽和溶解度 =當下水溫之含氮量。在純水的溫度調整過程中，利用ς 環系統=2控觀水之溶氮量在—溶氮定值的方法包括， 利用循環純1〇2的溫度調整單元122，明整純水之 度。 /皿Then, the circulation system 102 is used to control the amount of dissolved nitrogen in the pure water to a certain value (Y step 210). Since the saturated solubility of nitrogen is inversely proportional to the temperature of pure water. That is, the higher the temperature of the silk water, the lower the saturated solubility of pure water nitrogen in the f-path; if the temperature of the pure water is lower, the saturation solubility of the pure water nitrogen in the pipeline is more severe. Therefore, in the tank (1) device, the saturated solubility of nitrogen = the nitrogen content of the current water temperature. In the process of temperature adjustment of pure water, the method of using the helium ring system = 2 to control the amount of nitrogen dissolved in the water - the method of determining the value of nitrogen is included, using the temperature adjusting unit 122 of the circulating pure 1 〇 2, the degree of pure water . / dish
^接著將、、’屯水由循環系統輸送至|虫刻槽中（步 =20):亚使純水之溫度維持在適當的蝕刻反應溫度，： 同％將氨水與雙氧水輸送至蝕刻槽1〇4中。 、上述，將純水由循環系統1〇2輸送至钱刻槽1〇 方法為利用第—供水f路116與第 Π4 ’將越水輪送至_ KH中。二= 置；在適當的蝕刻反應溫度之方法為，利用配 置於弟-i、水官路刚上之溫度控制器⑽，將純水之溫 13 I2849^3twfd〇c/r 度控制在姓刻反應溫度，此餘刻反應溫度例如是t， 當然此蝕刻反應溫度可需視實際製程上之要求而定。^ Then, the water is transported from the circulation system to the insect groove (step = 20): the temperature of the pure water is maintained at the appropriate etching reaction temperature, and the ammonia water and hydrogen peroxide are transported to the etching tank 1 〇4. In the above, the pure water is transported from the circulation system 1〇2 to the money groove 1〇. The method is to use the first water supply path 116 and the fourth water to send the waterwheel to the _KH. 2 = setting; in the appropriate etching reaction temperature method, using the temperature controller (10) disposed on the brother-i, Shuiguan Road, the temperature of the pure water 13 I2849^3twfd〇c / r degree is controlled at the surname The reaction temperature, for example, the reaction temperature is, for example, t. Of course, the etching reaction temperature may be determined according to the requirements of the actual process.
請繼續同時參照圖1與圖2，之後，將待蝕刻之具有 多晶矽層的一晶圓置入蝕刻槽1〇4中（步驟23〇)，以進行蝕 刻步驟，而得到一蝕刻率。若此蝕刻率大於一預定之蝕刻 率，則可調高步驟210中之溶氮定值，若蝕刻率小於預^ 之蝕刻率，則調低溶氮定值，並重複步驟210〜230，直 到所得到蝕刻率等於預定之蝕刻率。其中，所謂的預定之 韻刻率是指視實際製程所需而定之鍅刻率。 上述，調高純水的溶氮量之方法為，利用循環系統1〇2 的溫度調整單元122，以職純水之溫度。相反地’’調低 純水的溶氮量之方法為，利關環系統搬的溫度調 元122，以調高純水之溫度。 而 之問 标上所述，本發明係利用調整純水之溫度，以 材的溶氮量，進而達到有效控制多晶魏刻率的目工的 另方面’利用本發明以控制多晶石夕钱刻率之方法 ^加钱刻液之用量，因此可避免廢液處理成本的提高之^ 圍内，當可作脫離本發明之精神和範 之申請專利範_界定者為準。 【圖式簡單說明】 圖1為依照本發明實施例所緣示之濕式侧裝置的配 14 I2849^3twf.doc/r 置示意圖。 圖2為依照本發明實施例所繪示之控制多晶矽蝕刻率 的方法之步驟流程圖。 【主要元件符號說明】 100 :濕式蝕刻裝置 102 :循環系統 104 :蝕刻槽 106 :第二供水管路 I 108 :溫度控制器 110 :第一儲存槽 112 :第二儲存槽 114 :儲水槽 116 :第一供水管路 118 :循環回流管路 120 :泵浦 122 :溫度調整單元 122a :加熱器 | 122b :冷卻器 122c :溫度感測器 124 :排氣閥 126 :純水供應管路 128 :第一進料管路 130 :第二進料管路 132 :第一控制閥 134 :第二控制閥 200、210、220、230 :步驟 15Referring to FIG. 1 and FIG. 2 simultaneously, a wafer having a polysilicon layer to be etched is placed in the etching trench 1〇4 (step 23A) to perform an etching step to obtain an etching rate. If the etch rate is greater than a predetermined etch rate, the nitrogen soda setting in step 210 can be increased. If the etch rate is less than the pre-etch rate, the dissolved nitrogen setting is lowered, and steps 210-230 are repeated until The resulting etch rate is equal to the predetermined etch rate. Among them, the so-called predetermined rhyme rate refers to the engraving rate depending on the actual process requirements. In the above, the method of increasing the nitrogen solubilization amount of the pure water is to use the temperature adjustment unit 122 of the circulation system 1〇2 to determine the temperature of the pure water. Conversely, the method of lowering the amount of dissolved nitrogen in pure water is to increase the temperature of the pure water by moving the temperature adjustment unit 122. As described above, the present invention utilizes the method of adjusting the temperature of pure water to achieve the amount of nitrogen dissolved in the material, thereby achieving the objective of effectively controlling the polycrystalline weissing rate. The method of money engraving rate ^ the amount of money engraving liquid, so that the cost of waste liquid treatment can be avoided, and the patent application model defined in the spirit and scope of the present invention shall prevail. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the arrangement of a wet side device according to an embodiment of the present invention. 2 is a flow chart showing the steps of a method for controlling a polysilicon etch rate according to an embodiment of the invention. [Main component symbol description] 100: wet etching apparatus 102: circulation system 104: etching tank 106: second water supply line I 108: temperature controller 110: first storage tank 112: second storage tank 114: water storage tank 116 : First water supply line 118 : circulation return line 120 : pump 122 : temperature adjustment unit 122a : heater | 122b : cooler 122c : temperature sensor 124 : exhaust valve 126 : pure water supply line 128 : First feed line 130: second feed line 132: first control valve 134: second control valve 200, 210, 220, 230: step 15