TW200715335A - Vacuum reaction chamber with X-lamp heater - Google Patents
Vacuum reaction chamber with X-lamp heaterInfo
- Publication number
- TW200715335A TW200715335A TW095133932A TW95133932A TW200715335A TW 200715335 A TW200715335 A TW 200715335A TW 095133932 A TW095133932 A TW 095133932A TW 95133932 A TW95133932 A TW 95133932A TW 200715335 A TW200715335 A TW 200715335A
- Authority
- TW
- Taiwan
- Prior art keywords
- vacuum chamber
- light array
- reaction chamber
- lamp heater
- vacuum reaction
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K15/00—Electron-beam welding or cutting
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
- H01J2237/0041—Neutralising arrangements
- H01J2237/0044—Neutralising arrangements of objects being observed or treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3156—Curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/316—Changing physical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3165—Changing chemical properties
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US71738605P | 2005-09-15 | 2005-09-15 | |
US78190806P | 2006-03-13 | 2006-03-13 | |
US11/383,383 US20060289795A1 (en) | 2005-06-02 | 2006-05-15 | Vacuum reaction chamber with x-lamp heater |
US11/425,974 US7777197B2 (en) | 2005-06-02 | 2006-06-22 | Vacuum reaction chamber with x-lamp heater |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200715335A true TW200715335A (en) | 2007-04-16 |
TWI357089B TWI357089B (en) | 2012-01-21 |
Family
ID=37889325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095133932A TWI357089B (en) | 2005-09-15 | 2006-09-13 | Vacuum reaction chamber with x-lamp heater |
Country Status (3)
Country | Link |
---|---|
US (1) | US7777197B2 (zh) |
TW (1) | TWI357089B (zh) |
WO (1) | WO2007035389A2 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9823133B2 (en) | 2009-07-20 | 2017-11-21 | Applied Materials, Inc. | EMI/RF shielding of thermocouples |
US10475626B2 (en) * | 2015-03-17 | 2019-11-12 | Applied Materials, Inc. | Ion-ion plasma atomic layer etch process and reactor |
WO2017004042A1 (en) | 2015-06-29 | 2017-01-05 | Applied Materials, Inc. | Temperature controlled additive manufacturing |
US10991617B2 (en) | 2018-05-15 | 2021-04-27 | Applied Materials, Inc. | Methods and apparatus for cleaving of semiconductor substrates |
EP3599632A1 (en) * | 2018-07-24 | 2020-01-29 | ASML Netherlands B.V. | Substrate positioning device with remote temperature sensor |
EP3935658A1 (en) * | 2019-03-04 | 2022-01-12 | AGC Glass Europe | Charge neutralizing apparatus |
US20220199379A1 (en) * | 2019-04-26 | 2022-06-23 | Lam Research Corporation | High temperature heating of a substrate in a processing chamber |
US11664195B1 (en) | 2021-11-11 | 2023-05-30 | Velvetch Llc | DC plasma control for electron enhanced material processing |
US11688588B1 (en) | 2022-02-09 | 2023-06-27 | Velvetch Llc | Electron bias control signals for electron enhanced material processing |
US11869747B1 (en) | 2023-01-04 | 2024-01-09 | Velvetch Llc | Atomic layer etching by electron wavefront |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3939012A (en) | 1975-04-21 | 1976-02-17 | Instrumatics, Inc. | Multipoint thermocouple assembly using coil springs |
US4242148A (en) | 1979-08-03 | 1980-12-30 | Thermo Electric Co., Inc. | Thermocouple surface probe |
US4297189A (en) | 1980-06-27 | 1981-10-27 | Rockwell International Corporation | Deposition of ordered crystalline films |
US5003178A (en) | 1988-11-14 | 1991-03-26 | Electron Vision Corporation | Large-area uniform electron source |
MY113904A (en) * | 1995-05-08 | 2002-06-29 | Electron Vision Corp | Method for curing spin-on-glass film utilizing electron beam radiation |
US5757018A (en) | 1995-12-11 | 1998-05-26 | Varian Associates, Inc. | Zero deflection magnetically-suppressed Faraday for ion implanters |
US5925038A (en) | 1996-01-19 | 1999-07-20 | Ep Technologies, Inc. | Expandable-collapsible electrode structures for capacitive coupling to tissue |
JP3956057B2 (ja) * | 1996-01-31 | 2007-08-08 | エイエスエム アメリカ インコーポレイテッド | 熱処理のモデル規範型予測制御 |
US6258287B1 (en) * | 1996-08-28 | 2001-07-10 | Georgia Tech Research Corporation | Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment |
GB9622127D0 (en) * | 1996-10-24 | 1996-12-18 | Nordiko Ltd | Ion gun |
WO1998021925A2 (en) | 1996-11-04 | 1998-05-28 | Lamberts Robert L | Method for making a sinusoidal test object |
US5864282A (en) * | 1996-11-29 | 1999-01-26 | Marchi Associates, Inc. | Unique strain relief junction |
US6010056A (en) | 1997-06-18 | 2000-01-04 | Swanson; David W. | Gimbal horn pressure head with shape of pivot rod bearing corresponding to shape of contact surface |
US6504393B1 (en) * | 1997-07-15 | 2003-01-07 | Applied Materials, Inc. | Methods and apparatus for testing semiconductor and integrated circuit structures |
US6592661B1 (en) | 1998-02-25 | 2003-07-15 | Micron Technology, Inc. | Method for processing wafers in a semiconductor fabrication system |
US5970214A (en) | 1998-05-14 | 1999-10-19 | Ag Associates | Heating device for semiconductor wafers |
EP1077479A1 (en) | 1999-08-17 | 2001-02-21 | Applied Materials, Inc. | Post-deposition treatment to enchance properties of Si-O-C low K film |
US6582777B1 (en) | 2000-02-17 | 2003-06-24 | Applied Materials Inc. | Electron beam modification of CVD deposited low dielectric constant materials |
US6310323B1 (en) | 2000-03-24 | 2001-10-30 | Micro C Technologies, Inc. | Water cooled support for lamps and rapid thermal processing chamber |
JP4073174B2 (ja) * | 2001-03-26 | 2008-04-09 | 株式会社荏原製作所 | 中性粒子ビーム処理装置 |
US7026634B2 (en) * | 2001-06-28 | 2006-04-11 | E-Beam & Light, Inc. | Method and apparatus for forming optical materials and devices |
KR20030072324A (ko) | 2001-07-09 | 2003-09-13 | 이비덴 가부시키가이샤 | 세라믹 히터 및 세라믹 접합체 |
US6793114B2 (en) | 2002-04-05 | 2004-09-21 | Pace, Incorporated | Soldering heater cartridge with replaceable tips and soldering iron for use therewith |
US20040101632A1 (en) | 2002-11-22 | 2004-05-27 | Applied Materials, Inc. | Method for curing low dielectric constant film by electron beam |
US7323399B2 (en) | 2002-05-08 | 2008-01-29 | Applied Materials, Inc. | Clean process for an electron beam source |
US6839507B2 (en) | 2002-10-07 | 2005-01-04 | Applied Materials, Inc. | Black reflector plate |
US6857776B2 (en) | 2002-12-12 | 2005-02-22 | Ametek, Inc. | Connectorized high-temperature thermocouple |
US6911403B2 (en) | 2003-08-20 | 2005-06-28 | Applied Materials, Inc. | Methods of reducing plasma-induced damage for advanced plasma CVD dielectrics |
-
2006
- 2006-06-22 US US11/425,974 patent/US7777197B2/en not_active Expired - Fee Related
- 2006-09-13 TW TW095133932A patent/TWI357089B/zh not_active IP Right Cessation
- 2006-09-13 WO PCT/US2006/035753 patent/WO2007035389A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2007035389A3 (en) | 2008-07-17 |
TWI357089B (en) | 2012-01-21 |
WO2007035389A2 (en) | 2007-03-29 |
US20060272772A1 (en) | 2006-12-07 |
WO2007035389A8 (en) | 2007-10-11 |
US7777197B2 (en) | 2010-08-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |