TW200710855A - Nonvolatile memory device and method of reducing an effect of over-erased nonvolatile memory cells - Google Patents

Nonvolatile memory device and method of reducing an effect of over-erased nonvolatile memory cells

Info

Publication number
TW200710855A
TW200710855A TW095124123A TW95124123A TW200710855A TW 200710855 A TW200710855 A TW 200710855A TW 095124123 A TW095124123 A TW 095124123A TW 95124123 A TW95124123 A TW 95124123A TW 200710855 A TW200710855 A TW 200710855A
Authority
TW
Taiwan
Prior art keywords
nonvolatile memory
over
erased
memory cell
memory cells
Prior art date
Application number
TW095124123A
Other languages
English (en)
Inventor
Nicola Telecco
Victor Nguyen
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Publication of TW200710855A publication Critical patent/TW200710855A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3477—Circuits or methods to prevent overerasing of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits

Landscapes

  • Read Only Memory (AREA)
TW095124123A 2005-07-11 2006-07-03 Nonvolatile memory device and method of reducing an effect of over-erased nonvolatile memory cells TW200710855A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/178,965 US7180779B2 (en) 2005-07-11 2005-07-11 Memory architecture with enhanced over-erase tolerant control gate scheme

Publications (1)

Publication Number Publication Date
TW200710855A true TW200710855A (en) 2007-03-16

Family

ID=37618160

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095124123A TW200710855A (en) 2005-07-11 2006-07-03 Nonvolatile memory device and method of reducing an effect of over-erased nonvolatile memory cells

Country Status (6)

Country Link
US (1) US7180779B2 (zh)
EP (1) EP1905043A4 (zh)
JP (1) JP2009502001A (zh)
CN (1) CN101253572A (zh)
TW (1) TW200710855A (zh)
WO (1) WO2007008326A2 (zh)

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US8929139B2 (en) 2011-04-13 2015-01-06 Macronix International Co., Ltd. Method and apparatus for leakage suppression in flash memory
US9390799B2 (en) * 2012-04-30 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Non-volatile memory cell devices and methods, having a storage cell with two sidewall bit cells
CN104376872B (zh) * 2013-08-16 2018-07-06 北京兆易创新科技股份有限公司 一种对快闪存储器擦除中断的处理方法
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Also Published As

Publication number Publication date
WO2007008326A2 (en) 2007-01-18
JP2009502001A (ja) 2009-01-22
EP1905043A4 (en) 2008-12-17
US7180779B2 (en) 2007-02-20
CN101253572A (zh) 2008-08-27
US20070008775A1 (en) 2007-01-11
WO2007008326A3 (en) 2007-04-05
EP1905043A2 (en) 2008-04-02

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