TW200709474A - Light emitting diode employing an array of nonorods and method of fabricating the same - Google Patents

Light emitting diode employing an array of nonorods and method of fabricating the same

Info

Publication number
TW200709474A
TW200709474A TW095122699A TW95122699A TW200709474A TW 200709474 A TW200709474 A TW 200709474A TW 095122699 A TW095122699 A TW 095122699A TW 95122699 A TW95122699 A TW 95122699A TW 200709474 A TW200709474 A TW 200709474A
Authority
TW
Taiwan
Prior art keywords
light emitting
emitting diode
array
fabricating
nanorods
Prior art date
Application number
TW095122699A
Other languages
English (en)
Other versions
TWI329369B (en
Inventor
Hwa-Mok Kim
Original Assignee
Seoul Opto Devices Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Opto Devices Co Ltd filed Critical Seoul Opto Devices Co Ltd
Publication of TW200709474A publication Critical patent/TW200709474A/zh
Application granted granted Critical
Publication of TWI329369B publication Critical patent/TWI329369B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
TW095122699A 2005-08-19 2006-06-23 Light emitting diode employing an array of nanorods and method of fabricating the same TWI329369B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050076205A KR20070021671A (ko) 2005-08-19 2005-08-19 나노막대들의 어레이를 채택한 발광 다이오드 및 그것을제조하는 방법
PCT/KR2006/002148 WO2007021069A1 (en) 2005-08-19 2006-06-05 Light emitting diode employing an array of nanorods and method of fabricating the same

Publications (2)

Publication Number Publication Date
TW200709474A true TW200709474A (en) 2007-03-01
TWI329369B TWI329369B (en) 2010-08-21

Family

ID=37757711

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095122699A TWI329369B (en) 2005-08-19 2006-06-23 Light emitting diode employing an array of nanorods and method of fabricating the same

Country Status (4)

Country Link
US (1) US7816700B2 (zh)
KR (1) KR20070021671A (zh)
TW (1) TWI329369B (zh)
WO (1) WO2007021069A1 (zh)

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EP2410582B1 (en) * 2005-05-24 2019-09-04 LG Electronics Inc. Nano rod type light emitting diode and method for fabricating a nano rod type light emitting diode
JP2008544567A (ja) * 2005-06-27 2008-12-04 ソウル オプト デバイス カンパニー リミテッド 窒化物多重量子ウェルを有するナノロッドアレイ構造の発光ダイオード、その製造方法、及びナノロッド
US8946674B2 (en) 2005-08-31 2015-02-03 University Of Florida Research Foundation, Inc. Group III-nitrides on Si substrates using a nanostructured interlayer
US8222057B2 (en) 2006-08-29 2012-07-17 University Of Florida Research Foundation, Inc. Crack free multilayered devices, methods of manufacture thereof and articles comprising the same
WO2008045423A1 (en) * 2006-10-10 2008-04-17 Structured Materials Inc. Self assembled controlled luminescent transparent conductive photonic crystals for light emitting devices
KR100872281B1 (ko) * 2006-12-15 2008-12-05 삼성전기주식회사 나노와이어 구조체를 이용한 반도체 발광소자 및 그제조방법
KR100878419B1 (ko) * 2007-07-13 2009-01-13 삼성전기주식회사 수발광소자
WO2010014032A1 (en) 2008-07-07 2010-02-04 Glo Ab A nanostructured LED
KR101515100B1 (ko) * 2008-10-21 2015-04-24 삼성전자주식회사 발광 다이오드 및 그 제조 방법
DE102008056175A1 (de) 2008-11-06 2010-05-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Strahlung emittierenden Dünnschichtbauelements und Strahlung emittierendes Dünnschichtbauelement
CN102449772A (zh) * 2009-03-25 2012-05-09 格罗有限公司 肖特基器件
FR2949278B1 (fr) * 2009-08-18 2012-11-02 Commissariat Energie Atomique Procede de fabrication d'un dispositif d'emission de lumiere a base de diodes electroluminescentes
KR101650840B1 (ko) 2009-08-26 2016-08-24 삼성전자주식회사 발광소자 및 이의 제조방법
KR101611412B1 (ko) * 2009-10-28 2016-04-11 삼성전자주식회사 발광 소자
KR100974626B1 (ko) * 2009-12-22 2010-08-09 동국대학교 산학협력단 접촉 구조의 나노로드 반도체 소자 및 그 제조 방법
US7906354B1 (en) * 2010-03-30 2011-03-15 Eastman Kodak Company Light emitting nanowire device
KR20110123118A (ko) 2010-05-06 2011-11-14 삼성전자주식회사 패터닝된 발광부를 구비한 수직형 발광소자
KR101125605B1 (ko) * 2010-06-04 2012-03-27 세종대학교산학협력단 고휘도 마이크로 어레이 발광 다이오드 소자의 구조 및 그 제조 방법
US8669125B2 (en) 2010-06-18 2014-03-11 Glo Ab Nanowire LED structure and method for manufacturing the same
KR101636915B1 (ko) * 2010-09-03 2016-07-07 삼성전자주식회사 그래핀 또는 탄소나노튜브를 이용한 반도체 화합물 구조체 및 그 제조방법과, 반도체 화합물 구조체를 포함하는 반도체 소자
KR101209449B1 (ko) * 2011-04-29 2012-12-07 피에스아이 주식회사 풀－칼라 ｌｅｄ 디스플레이 장치 및 그 제조방법
US8350251B1 (en) 2011-09-26 2013-01-08 Glo Ab Nanowire sized opto-electronic structure and method for manufacturing the same
EP2618388B1 (en) * 2012-01-20 2019-10-02 OSRAM Opto Semiconductors GmbH Light-emitting diode chip
KR101260790B1 (ko) * 2012-03-22 2013-05-06 한국표준과학연구원 나노선 어레이 상부전극 형성방법 및 상부전극이 형성된 나노선 어레이
TWI478382B (zh) * 2012-06-26 2015-03-21 Lextar Electronics Corp 發光二極體及其製造方法
FR3000294B1 (fr) 2012-12-21 2016-03-04 Aledia Support fonctionnel comprenant des nanofils et des nano-empreintes et procede de fabrication dudit support
CN104465934A (zh) * 2014-12-17 2015-03-25 聚灿光电科技(苏州)有限公司 Led芯片及其制作方法
CN106374023B (zh) * 2016-10-31 2018-10-30 华南理工大学 生长在镓酸锂衬底上的非极性纳米柱led及其制备方法
CN106299050B (zh) * 2016-11-17 2018-08-17 河北工业大学 一种深紫外半导体发光二极管及其制备方法
FR3064109A1 (fr) * 2017-03-20 2018-09-21 Commissariat A L'energie Atomique Et Aux Energies Alternatives Structure a nanofils et procede de realisation d'une telle structure
JP7424038B2 (ja) * 2019-12-23 2024-01-30 セイコーエプソン株式会社 発光装置、および、プロジェクター
CN111326590A (zh) * 2020-02-19 2020-06-23 珠海格力电器股份有限公司 半导体装置及其制造方法

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KR20010003987A (ko) * 1999-06-28 2001-01-15 정선종 실리콘 나노 선과 나노 점을 이용한 발광다이오드의 제조방법
US6340822B1 (en) * 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
JP4672839B2 (ja) 2000-09-06 2011-04-20 キヤノン株式会社 発光体、構造体及びその製造方法
KR101008294B1 (ko) 2001-03-30 2011-01-13 더 리전트 오브 더 유니버시티 오브 캘리포니아 나노구조체 및 나노와이어의 제조 방법 및 그로부터 제조되는 디바이스
KR100470904B1 (ko) * 2002-07-20 2005-03-10 주식회사 비첼 고휘도 질화물 마이크로 발광 다이오드 및 그 제조방법
JP2004084037A (ja) * 2002-08-28 2004-03-18 Seiko Epson Corp 表面処理方法、金属部品および時計
KR100554155B1 (ko) * 2003-06-09 2006-02-22 학교법인 포항공과대학교 금속/반도체 나노막대 이종구조를 이용한 전극 구조물 및그 제조 방법
US7012279B2 (en) * 2003-10-21 2006-03-14 Lumileds Lighting U.S., Llc Photonic crystal light emitting device
US7132677B2 (en) * 2004-02-13 2006-11-07 Dongguk University Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same
JP4160000B2 (ja) 2004-02-13 2008-10-01 ドンゴク ユニバーシティ インダストリー アカデミック コーポレイション ファウンデイション 発光ダイオードおよびその製造方法

Also Published As

Publication number Publication date
WO2007021069A1 (en) 2007-02-22
TWI329369B (en) 2010-08-21
US20080210956A1 (en) 2008-09-04
KR20070021671A (ko) 2007-02-23
US7816700B2 (en) 2010-10-19

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