TW200705092A - Method of producing a phase shift mask blank and method of producing a phase shift mask - Google Patents

Method of producing a phase shift mask blank and method of producing a phase shift mask

Info

Publication number
TW200705092A
TW200705092A TW095117775A TW95117775A TW200705092A TW 200705092 A TW200705092 A TW 200705092A TW 095117775 A TW095117775 A TW 095117775A TW 95117775 A TW95117775 A TW 95117775A TW 200705092 A TW200705092 A TW 200705092A
Authority
TW
Taiwan
Prior art keywords
producing
phase shift
shift mask
transparent film
light semi
Prior art date
Application number
TW095117775A
Other languages
Chinese (zh)
Other versions
TWI403829B (en
Inventor
Toshiyuki Suzuki
Minoru Sakamoto
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200705092A publication Critical patent/TW200705092A/en
Application granted granted Critical
Publication of TWI403829B publication Critical patent/TWI403829B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

In a method of producing a phase shift mask blank including a transparent substrate and a light semi-transparent film formed thereon and having a predetermined transmittance with respect to an exposure wavelength, the light semi-transparent film containing metal, silicon, nitrogen and/oroxygen as main components is formed on the transparent substrate. The light semi-transparent film is subjected to heat treatment, for example, by a heating plate. Immediately after the heat treatment, the hght semi-transparent film is cooled by coohng means (for example, a cooling plate or the like) which is capable of carrying out a cooling operation at an in-plane uniform cooling rate and capable of carrying out a forced cooling operation.
TW095117775A 2005-05-20 2006-05-19 Method of producing a phase shift mask blank and method of producing a phase shift mask TWI403829B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005147695A JP4930964B2 (en) 2005-05-20 2005-05-20 Method for manufacturing phase shift mask blank and method for manufacturing phase shift mask

Publications (2)

Publication Number Publication Date
TW200705092A true TW200705092A (en) 2007-02-01
TWI403829B TWI403829B (en) 2013-08-01

Family

ID=37431202

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095117775A TWI403829B (en) 2005-05-20 2006-05-19 Method of producing a phase shift mask blank and method of producing a phase shift mask

Country Status (4)

Country Link
JP (1) JP4930964B2 (en)
KR (1) KR100922913B1 (en)
TW (1) TWI403829B (en)
WO (1) WO2006123630A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5286455B1 (en) 2012-03-23 2013-09-11 Ｈｏｙａ株式会社 Mask blank, transfer mask, and manufacturing method thereof
US9470971B2 (en) 2012-05-16 2016-10-18 Hoya Corporation Mask blank, transfer mask, and methods of manufacturing the same
CN111133379B (en) * 2017-09-21 2024-03-22 Hoya株式会社 Mask blank, transfer mask, and method for manufacturing semiconductor device
JP7192731B2 (en) 2019-09-27 2022-12-20 信越化学工業株式会社 Halftone phase shift photomask blank, manufacturing method thereof, and halftone phase shift photomask
KR102444967B1 (en) * 2021-04-29 2022-09-16 에스케이씨솔믹스 주식회사 Blank mask and photomask using the same
KR102465982B1 (en) * 2021-07-13 2022-11-09 에스케이씨솔믹스 주식회사 Blank mask and photomask using the same
KR102503790B1 (en) * 2021-10-07 2023-02-23 에스케이엔펄스 주식회사 Blank mask and photomask using the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4503713B2 (en) * 1997-01-22 2010-07-14 株式会社アルバック Substrate cooling method for vacuum film formation
JP2000268418A (en) * 1999-03-12 2000-09-29 Sony Corp Annealing apparatus and production of disk for recording medium
JP2000348996A (en) * 1999-06-02 2000-12-15 Matsushita Electronics Industry Corp Stencil mask, manufacture thereof and reduction projection exposure method using the same
JP3722029B2 (en) * 2000-09-12 2005-11-30 Ｈｏｙａ株式会社 Phase shift mask blank manufacturing method and phase shift mask manufacturing method
JP3608654B2 (en) * 2000-09-12 2005-01-12 Ｈｏｙａ株式会社 Phase shift mask blank, phase shift mask
JP2002156742A (en) * 2000-11-20 2002-05-31 Shin Etsu Chem Co Ltd Phase shift mask blank, phase shift mask and method for manufacturing the same
JP2002229183A (en) * 2000-12-01 2002-08-14 Hoya Corp Lithography mask blank and method for manufacturing the same
JP2002289537A (en) * 2001-03-27 2002-10-04 Mitsui Eng & Shipbuild Co Ltd CVD-SiC HOLLOW VERTICAL WAFER BOAT
JP4099328B2 (en) * 2001-11-26 2008-06-11 キヤノンアネルバ株式会社 Method for preventing particle generation in sputtering apparatus, sputtering method, sputtering apparatus, and covering member
JP4158885B2 (en) * 2002-04-22 2008-10-01 Ｈｏｙａ株式会社 Photomask blank manufacturing method
JP4049372B2 (en) * 2002-10-23 2008-02-20 Ｈｏｙａ株式会社 Method for manufacturing halftone phase shift mask blanks

Also Published As

Publication number Publication date
JP2006323236A (en) 2006-11-30
JP4930964B2 (en) 2012-05-16
KR100922913B1 (en) 2009-10-22
TWI403829B (en) 2013-08-01
WO2006123630A1 (en) 2006-11-23
KR20080015453A (en) 2008-02-19

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees