TW200702906A - Photomask structures providing improved photolithographic process windows and methods of manufacturing same - Google Patents

Photomask structures providing improved photolithographic process windows and methods of manufacturing same

Info

Publication number
TW200702906A
TW200702906A TW095113608A TW95113608A TW200702906A TW 200702906 A TW200702906 A TW 200702906A TW 095113608 A TW095113608 A TW 095113608A TW 95113608 A TW95113608 A TW 95113608A TW 200702906 A TW200702906 A TW 200702906A
Authority
TW
Taiwan
Prior art keywords
feature
printing
methods
printable element
photolithographic process
Prior art date
Application number
TW095113608A
Other languages
English (en)
Inventor
Ho-Chul Kim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200702906A publication Critical patent/TW200702906A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW095113608A 2005-04-15 2006-04-17 Photomask structures providing improved photolithographic process windows and methods of manufacturing same TW200702906A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US67162605P 2005-04-15 2005-04-15
US67366905P 2005-04-21 2005-04-21
US11/325,081 US20060234137A1 (en) 2005-04-15 2006-01-03 Photomask structures providing improved photolithographic process windows and methods of manufacturing same

Publications (1)

Publication Number Publication Date
TW200702906A true TW200702906A (en) 2007-01-16

Family

ID=37108868

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095113608A TW200702906A (en) 2005-04-15 2006-04-17 Photomask structures providing improved photolithographic process windows and methods of manufacturing same

Country Status (5)

Country Link
US (1) US20060234137A1 (zh)
JP (1) JP2006301631A (zh)
KR (1) KR100763222B1 (zh)
DE (1) DE102006018074A1 (zh)
TW (1) TW200702906A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI422986B (zh) * 2008-08-28 2014-01-11 Synopsys Inc 用於光學近接修正的粗修影像模式化
US8830458B2 (en) 2012-09-24 2014-09-09 Industrial Technology Research Institute Measurement systems and measurement methods

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7642019B2 (en) 2005-04-15 2010-01-05 Samsung Electronics Co., Ltd. Methods for monitoring and adjusting focus variation in a photolithographic process using test features printed from photomask test pattern images; and machine readable program storage device having instructions therefore
US7493590B1 (en) * 2006-07-11 2009-02-17 Kla-Tencor Technologies Corporation Process window optical proximity correction
KR100762245B1 (ko) * 2006-09-29 2007-10-01 주식회사 하이닉스반도체 포토마스크의 패턴 결함 수정 방법
US7821061B2 (en) * 2007-03-29 2010-10-26 Intel Corporation Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications
KR100909629B1 (ko) * 2007-10-31 2009-07-27 주식회사 하이닉스반도체 포토마스크의 형성방법
US8071262B2 (en) 2008-11-05 2011-12-06 Micron Technology, Inc. Reticles with subdivided blocking regions
CN102346384B (zh) * 2010-07-30 2014-04-16 上海微电子装备有限公司 将硅片调整至最佳焦平面的方法及其曝光装置
KR102238708B1 (ko) * 2014-08-19 2021-04-12 삼성전자주식회사 리소그래피 공정의 초점 이동 체크 방법 및 이를 이용한 전사 패턴 오류 분석 방법
CN107710073B (zh) 2015-06-12 2021-04-30 Asml荷兰有限公司 检查设备、检查方法、光刻设备、图案化装置及制造方法
US9711420B1 (en) * 2016-03-14 2017-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Inline focus monitoring
US10599046B2 (en) 2017-06-02 2020-03-24 Samsung Electronics Co., Ltd. Method, a non-transitory computer-readable medium, and/or an apparatus for determining whether to order a mask structure
KR102368435B1 (ko) * 2017-07-28 2022-03-02 삼성전자주식회사 기판 검사 장치, 기판 검사 방법 및 이를 이용한 반도체 소자의 제조 방법
US10650111B2 (en) * 2017-11-30 2020-05-12 International Business Machines Corporation Electrical mask validation
US10811492B2 (en) 2018-10-31 2020-10-20 Texas Instruments Incorporated Method and device for patterning thick layers

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3416973B2 (ja) * 1992-07-21 2003-06-16 ソニー株式会社 位相シフト・マスクの製造方法
JPH0455857A (ja) * 1990-06-25 1992-02-24 Matsushita Electron Corp フォトマスク
US5718829A (en) * 1995-09-01 1998-02-17 Micron Technology, Inc. Phase shift structure and method of fabrication
KR100219548B1 (ko) * 1996-08-19 1999-09-01 윤종용 위상반전마스크 및 그 제조방법
DE10136291B4 (de) * 2001-07-25 2008-05-08 Qimonda Ag Photolithographische Maske
TWI274969B (en) * 2002-09-11 2007-03-01 Asml Masktools Bv Method and computer program product of generating masks and mask generated thereby, device manufacturing method and device manufactured thereby, and method of printing pattern
KR20040079613A (ko) * 2003-03-08 2004-09-16 삼성전자주식회사 포토 마스크와 그를 이용한 콘택-홀 형성 방법
KR20050002372A (ko) * 2003-06-30 2005-01-07 주식회사 하이닉스반도체 반도체 소자의 마스크 제작 방법
US7172840B2 (en) * 2003-12-05 2007-02-06 Sandisk Corporation Photomask features with interior nonprinting window using alternating phase shifting

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI422986B (zh) * 2008-08-28 2014-01-11 Synopsys Inc 用於光學近接修正的粗修影像模式化
US8830458B2 (en) 2012-09-24 2014-09-09 Industrial Technology Research Institute Measurement systems and measurement methods

Also Published As

Publication number Publication date
KR20060109307A (ko) 2006-10-19
DE102006018074A1 (de) 2006-11-16
JP2006301631A (ja) 2006-11-02
US20060234137A1 (en) 2006-10-19
KR100763222B1 (ko) 2007-10-04

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