TW200702479A - Synthesis of a self assembled hybrid of ultrananocrystalline diamond and carbon nanotubes - Google Patents

Synthesis of a self assembled hybrid of ultrananocrystalline diamond and carbon nanotubes

Info

Publication number
TW200702479A
TW200702479A TW095111522A TW95111522A TW200702479A TW 200702479 A TW200702479 A TW 200702479A TW 095111522 A TW095111522 A TW 095111522A TW 95111522 A TW95111522 A TW 95111522A TW 200702479 A TW200702479 A TW 200702479A
Authority
TW
Taiwan
Prior art keywords
carbon nanotubes
diamond
synthesis
substrate
self assembled
Prior art date
Application number
TW095111522A
Other languages
English (en)
Inventor
xing-cheng Xiao
Orlando Auciello
Dieter M Gruen
John A Carlisle
Jeffery W Elam
Original Assignee
Univ Chicago
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Chicago filed Critical Univ Chicago
Publication of TW200702479A publication Critical patent/TW200702479A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/272—Diamond only using DC, AC or RF discharges
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
TW095111522A 2005-04-01 2006-03-31 Synthesis of a self assembled hybrid of ultrananocrystalline diamond and carbon nanotubes TW200702479A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/097,603 US20060222850A1 (en) 2005-04-01 2005-04-01 Synthesis of a self assembled hybrid of ultrananocrystalline diamond and carbon nanotubes

Publications (1)

Publication Number Publication Date
TW200702479A true TW200702479A (en) 2007-01-16

Family

ID=37070860

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095111522A TW200702479A (en) 2005-04-01 2006-03-31 Synthesis of a self assembled hybrid of ultrananocrystalline diamond and carbon nanotubes

Country Status (2)

Country Link
US (1) US20060222850A1 (zh)
TW (1) TW200702479A (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8298623B2 (en) 2009-03-21 2012-10-30 Tsinghua University Method for making composite material
TWI411574B (zh) * 2008-10-24 2013-10-11 Hon Hai Prec Ind Co Ltd 奈米碳管複合材料及其製備方法
US8790744B2 (en) 2008-11-14 2014-07-29 Tsinghua University Method for making nanowire structure

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US7572332B2 (en) * 2005-10-11 2009-08-11 Dimerond Technologies, Llc Self-composite comprised of nanocrystalline diamond and a non-diamond component useful for thermoelectric applications
US20110005564A1 (en) * 2005-10-11 2011-01-13 Dimerond Technologies, Inc. Method and Apparatus Pertaining to Nanoensembles Having Integral Variable Potential Junctions
US7718000B2 (en) * 2005-10-11 2010-05-18 Dimerond Technologies, Llc Method and article of manufacture corresponding to a composite comprised of ultra nonacrystalline diamond, metal, and other nanocarbons useful for thermoelectric and other applications
US20110107473A1 (en) * 2006-03-15 2011-05-05 Wisconsin Alumni Research Foundation Diamond-like carbon coated nanoprobes
US8642123B1 (en) * 2006-03-22 2014-02-04 University Of South Florida Integration of ZnO nanowires with nanocrystalline diamond fibers
US7947329B2 (en) * 2006-09-11 2011-05-24 Wisconsin Alumni Research Foundation Methods of applying a nanocrystalline diamond film to a cutting tool
US20090017258A1 (en) * 2007-07-10 2009-01-15 Carlisle John A Diamond film deposition
US20090214826A1 (en) * 2008-01-04 2009-08-27 Charles West Controlling diamond film surfaces
US8227350B2 (en) * 2008-01-04 2012-07-24 Advanced Diamond Technologies, Inc. Controlling diamond film surfaces and layering
US8496993B2 (en) * 2009-05-27 2013-07-30 GM Global Technology Operations LLC Nanocomposite coatings on cemented carbide
US8586999B1 (en) 2012-08-10 2013-11-19 Dimerond Technologies, Llc Apparatus pertaining to a core of wide band-gap material having a graphene shell
US9040395B2 (en) 2012-08-10 2015-05-26 Dimerond Technologies, Llc Apparatus pertaining to solar cells having nanowire titanium oxide cores and graphene exteriors and the co-generation conversion of light into electricity using such solar cells
US8829331B2 (en) 2012-08-10 2014-09-09 Dimerond Technologies Llc Apparatus pertaining to the co-generation conversion of light into electricity
WO2014076576A2 (en) 2012-11-14 2014-05-22 The Pontificia Universidad Católica Madre Y Maestra Carbon nanotubes conformally coated with diamond nanocrystals or silicon carbide, methods of making the same and methods of their use
JP2022535268A (ja) 2019-06-03 2022-08-05 ダイムロンド テクノロジーズ， エルエルシー 高効率グラフェン／ワイドバンドギャップ半導体ヘテロ接合太陽電池セル
JP7352073B2 (ja) * 2019-08-23 2023-09-28 富士通株式会社 半導体装置、半導体装置の製造方法及び電子装置

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US5079233A (en) * 1987-01-30 1992-01-07 American Cyanamid Company N-acyl derivatives of the LL-E33288 antitumor antibiotics, composition and methods for using the same
US5109046A (en) * 1991-02-28 1992-04-28 Atochem North America, Inc. Liquid organotinthioalkanol stabilizer compositions and vinyl halide resin compositions containing the same
US5209916A (en) * 1991-11-25 1993-05-11 Gruen Dieter M Conversion of fullerenes to diamond
FR2695645B1 (fr) * 1992-09-15 1994-12-16 Rhone Poulenc Chimie Procédé de préparation de polyaminoborazines.
DE19948570C2 (de) * 1999-10-08 2001-07-26 Infineon Technologies Ag Anordnung zur Verdrahtung von Leiterbahnen
JP3851167B2 (ja) * 2000-02-16 2006-11-29 フラーレン インターナショナル コーポレイション 効率的な電子電界放出のためのダイヤモンド／カーボンナノチューブ構造体
KR20020049630A (ko) * 2000-12-19 2002-06-26 임지순 전계방출 에미터
US6783589B2 (en) * 2001-01-19 2004-08-31 Chevron U.S.A. Inc. Diamondoid-containing materials in microelectronics
US7247980B2 (en) * 2002-08-04 2007-07-24 Iljin Idamond Co., Ltd Emitter composition using diamond, method of manufacturing the same and field emission cell using the same
US7097906B2 (en) * 2003-06-05 2006-08-29 Lockheed Martin Corporation Pure carbon isotropic alloy of allotropic forms of carbon including single-walled carbon nanotubes and diamond-like carbon

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI411574B (zh) * 2008-10-24 2013-10-11 Hon Hai Prec Ind Co Ltd 奈米碳管複合材料及其製備方法
US8790744B2 (en) 2008-11-14 2014-07-29 Tsinghua University Method for making nanowire structure
US8298623B2 (en) 2009-03-21 2012-10-30 Tsinghua University Method for making composite material

Also Published As

Publication number Publication date
US20060222850A1 (en) 2006-10-05

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