TW200644253A - Switching device for a pixel electrode and methods for fabricating the same - Google Patents
Switching device for a pixel electrode and methods for fabricating the sameInfo
- Publication number
- TW200644253A TW200644253A TW094119478A TW94119478A TW200644253A TW 200644253 A TW200644253 A TW 200644253A TW 094119478 A TW094119478 A TW 094119478A TW 94119478 A TW94119478 A TW 94119478A TW 200644253 A TW200644253 A TW 200644253A
- Authority
- TW
- Taiwan
- Prior art keywords
- fabricating
- methods
- pixel electrode
- same
- switching device
- Prior art date
Links
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 abstract 3
- 229910021360 copper silicide Inorganic materials 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094119478A TWI261929B (en) | 2005-06-13 | 2005-06-13 | Switching device for a pixel electrode and methods for fabricating the same |
US11/247,510 US7411212B2 (en) | 2005-06-13 | 2005-10-11 | Switching device for a pixel electrode and methods for fabricating the same |
US12/170,620 US7888190B2 (en) | 2005-06-13 | 2008-07-10 | Switching device for a pixel electrode and methods for fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094119478A TWI261929B (en) | 2005-06-13 | 2005-06-13 | Switching device for a pixel electrode and methods for fabricating the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI261929B TWI261929B (en) | 2006-09-11 |
TW200644253A true TW200644253A (en) | 2006-12-16 |
Family
ID=37523354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094119478A TWI261929B (en) | 2005-06-13 | 2005-06-13 | Switching device for a pixel electrode and methods for fabricating the same |
Country Status (2)
Country | Link |
---|---|
US (2) | US7411212B2 (zh) |
TW (1) | TWI261929B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104882488A (zh) * | 2015-06-15 | 2015-09-02 | 合肥鑫晟光电科技有限公司 | 薄膜晶体管、阵列基板及其制作方法、显示装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI267195B (en) * | 2005-06-20 | 2006-11-21 | Au Optronics Corp | Switching device for a pixel electrode and methods for fabricating the same |
TWI305682B (en) * | 2006-08-14 | 2009-01-21 | Au Optronics Corp | Bottom substrate for liquid crystal display device and the method of making the same |
KR101326134B1 (ko) * | 2007-02-07 | 2013-11-06 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
JP2009004518A (ja) * | 2007-06-20 | 2009-01-08 | Kobe Steel Ltd | 薄膜トランジスタ基板、および表示デバイス |
KR20110028313A (ko) * | 2008-07-03 | 2011-03-17 | 가부시키가이샤 고베 세이코쇼 | 배선 구조, 박막 트랜지스터 기판 및 그 제조 방법 및 표시 장치 |
US9331667B2 (en) * | 2014-07-21 | 2016-05-03 | Triquint Semiconductor, Inc. | Methods, systems, and apparatuses for temperature compensated surface acoustic wave device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4175437B2 (ja) * | 1997-09-16 | 2008-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
US6492266B1 (en) | 1998-07-09 | 2002-12-10 | Advanced Micro Devices, Inc. | Method of forming reliable capped copper interconnects |
JP2000332015A (ja) | 1999-05-12 | 2000-11-30 | United Microelectronics Corp | 銅キャッピング層の製造方法 |
US6562668B2 (en) * | 2000-08-12 | 2003-05-13 | Jin Jang | Method of fabricating thin film transistor using buffer layer and the thin film transistor |
US6911385B1 (en) * | 2002-08-22 | 2005-06-28 | Kovio, Inc. | Interface layer for the fabrication of electronic devices |
US6844258B1 (en) | 2003-05-09 | 2005-01-18 | Novellus Systems, Inc. | Selective refractory metal and nitride capping |
CN1622298A (zh) | 2004-12-13 | 2005-06-01 | 友达光电股份有限公司 | 制造薄膜晶体管的方法以及装置 |
TWI267195B (en) * | 2005-06-20 | 2006-11-21 | Au Optronics Corp | Switching device for a pixel electrode and methods for fabricating the same |
-
2005
- 2005-06-13 TW TW094119478A patent/TWI261929B/zh active
- 2005-10-11 US US11/247,510 patent/US7411212B2/en active Active
-
2008
- 2008-07-10 US US12/170,620 patent/US7888190B2/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104882488A (zh) * | 2015-06-15 | 2015-09-02 | 合肥鑫晟光电科技有限公司 | 薄膜晶体管、阵列基板及其制作方法、显示装置 |
CN104882488B (zh) * | 2015-06-15 | 2018-03-20 | 合肥鑫晟光电科技有限公司 | 薄膜晶体管、阵列基板及其制作方法、显示装置 |
US10658516B2 (en) | 2015-06-15 | 2020-05-19 | Boe Technology Group Co., Ltd. | Thin film transistor, array substrate, method for manufacturing the same, and display device |
Also Published As
Publication number | Publication date |
---|---|
US7411212B2 (en) | 2008-08-12 |
TWI261929B (en) | 2006-09-11 |
US7888190B2 (en) | 2011-02-15 |
US20080268586A1 (en) | 2008-10-30 |
US20060278872A1 (en) | 2006-12-14 |
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