TW200643627A - Positive resist composition and process for forming resist pattern - Google Patents

Positive resist composition and process for forming resist pattern

Info

Publication number
TW200643627A
TW200643627A TW095104927A TW95104927A TW200643627A TW 200643627 A TW200643627 A TW 200643627A TW 095104927 A TW095104927 A TW 095104927A TW 95104927 A TW95104927 A TW 95104927A TW 200643627 A TW200643627 A TW 200643627A
Authority
TW
Taiwan
Prior art keywords
structural unit
derived
groups
acid
hydroxyl
Prior art date
Application number
TW095104927A
Other languages
Chinese (zh)
Other versions
TWI302639B (en
Inventor
Akiyoshi Yamazaki
Waki Ohkubo
Naoto Motoike
Satoshi Maemori
Yuichi Suzuki
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200643627A publication Critical patent/TW200643627A/en
Application granted granted Critical
Publication of TWI302639B publication Critical patent/TWI302639B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C08F212/24—Phenols or alcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/30—Sulfur
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F228/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur
    • C08F228/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur by a bond to sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

This positive resist composition includes (A) a resin component having alkali solubility which increases under the action of an acid and (B) an acid generating agent component which generates an acid upon being exposed, in which the component (A) contains a first resin component having a first structural unit which is derived from hydroxyl styrene, a second structural unit which is derived from (meth)acrylic ester having alcoholic hydroxyl groups, a third structural unit in which hydroxyl groups of the structural unit derived from hydroxyl styrene are protected by acid dissociable, dissolution inhibiting groups, and/or a fourth structural unit in which alcoholic hydroxyl groups of the structural unit derived from (meth)acrylic ester having alcoholic hydroxyl groups are protected by acid dissociable, dissolution inhibiting groups; and a second resin component which contains a fifth structural unit derived from hydroxyl styrene, and a sixth structural unit in which hydroxyl groups of the structural unit derived from hydroxyl styrene are protected by acid dissociable, dissolution inhibiting groups.
TW095104927A 2005-03-04 2006-02-14 Positive resist composition and process for forming resist pattern TWI302639B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005060518A JP4184352B2 (en) 2005-03-04 2005-03-04 Positive resist composition and resist pattern forming method

Publications (2)

Publication Number Publication Date
TW200643627A true TW200643627A (en) 2006-12-16
TWI302639B TWI302639B (en) 2008-11-01

Family

ID=36953142

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095104927A TWI302639B (en) 2005-03-04 2006-02-14 Positive resist composition and process for forming resist pattern

Country Status (4)

Country Link
JP (1) JP4184352B2 (en)
KR (1) KR100881304B1 (en)
TW (1) TWI302639B (en)
WO (1) WO2006095540A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101458469B (en) * 2007-12-14 2012-07-04 株式会社理光 Electrophotography image forming method and apparatus
JP5844613B2 (en) * 2010-11-17 2016-01-20 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ Photosensitive copolymer and photoresist composition
CN105143291B (en) 2013-04-23 2017-03-22 三菱瓦斯化学株式会社 Novel alicyclic ester compound, and (meth)acrylic copolymer and photosensitive resin composition containing same
KR102142648B1 (en) 2013-12-16 2020-08-10 삼성디스플레이 주식회사 Photo-sensitive resin composition, method for manufacturing organic layer using the composition, and display device comprising the organic layer
US9951163B2 (en) 2014-01-31 2018-04-24 Mitsubishi Gas Chemical Company, Inc. (Meth)acrylate compound, (meth)acrylic copolymer and photosensitive resin composition containing same
CN105980347B (en) 2014-02-14 2019-08-16 三菱瓦斯化学株式会社 The manufacturing method of novel ester ring type ester compounds, novel ester ring type ester compounds, (methyl) acrylic acid series copolymer being polymerized and the photosensitive polymer combination comprising it
JP5802785B2 (en) * 2014-03-24 2015-11-04 富士フイルム株式会社 Pattern forming method and resist composition

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3587413B2 (en) * 1995-12-20 2004-11-10 東京応化工業株式会社 Chemically amplified resist composition and acid generator used therein
JP4069497B2 (en) * 1998-06-10 2008-04-02 Ｊｓｒ株式会社 Radiation sensitive resin composition
JP3757731B2 (en) * 1999-01-28 2006-03-22 住友化学株式会社 Resist composition
JP3785846B2 (en) * 1999-02-05 2006-06-14 住友化学株式会社 Chemically amplified positive resist composition
JP4178645B2 (en) * 1999-02-09 2008-11-12 Ｊｓｒ株式会社 Radiation sensitive resin composition
JP4329214B2 (en) * 2000-03-28 2009-09-09 住友化学株式会社 Chemically amplified positive resist composition
AU2003289430A1 (en) * 2002-12-26 2004-07-22 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method for forming resist pattern
JP4152810B2 (en) * 2003-06-13 2008-09-17 東京応化工業株式会社 Positive resist composition and resist pattern forming method
TWI316645B (en) * 2003-09-18 2009-11-01 Tokyo Ohka Kogyo Co Ltd Positive resist composition and resist pattern formation method

Also Published As

Publication number Publication date
JP2006243474A (en) 2006-09-14
TWI302639B (en) 2008-11-01
WO2006095540A1 (en) 2006-09-14
JP4184352B2 (en) 2008-11-19
KR20070101367A (en) 2007-10-16
KR100881304B1 (en) 2009-02-03

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