TW200643627A - Positive resist composition and process for forming resist pattern - Google Patents
Positive resist composition and process for forming resist patternInfo
- Publication number
- TW200643627A TW200643627A TW095104927A TW95104927A TW200643627A TW 200643627 A TW200643627 A TW 200643627A TW 095104927 A TW095104927 A TW 095104927A TW 95104927 A TW95104927 A TW 95104927A TW 200643627 A TW200643627 A TW 200643627A
- Authority
- TW
- Taiwan
- Prior art keywords
- structural unit
- derived
- groups
- acid
- hydroxyl
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/22—Oxygen
- C08F212/24—Phenols or alcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
- C08F212/30—Sulfur
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F228/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur
- C08F228/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur by a bond to sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Emergency Medicine (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
This positive resist composition includes (A) a resin component having alkali solubility which increases under the action of an acid and (B) an acid generating agent component which generates an acid upon being exposed, in which the component (A) contains a first resin component having a first structural unit which is derived from hydroxyl styrene, a second structural unit which is derived from (meth)acrylic ester having alcoholic hydroxyl groups, a third structural unit in which hydroxyl groups of the structural unit derived from hydroxyl styrene are protected by acid dissociable, dissolution inhibiting groups, and/or a fourth structural unit in which alcoholic hydroxyl groups of the structural unit derived from (meth)acrylic ester having alcoholic hydroxyl groups are protected by acid dissociable, dissolution inhibiting groups; and a second resin component which contains a fifth structural unit derived from hydroxyl styrene, and a sixth structural unit in which hydroxyl groups of the structural unit derived from hydroxyl styrene are protected by acid dissociable, dissolution inhibiting groups.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005060518A JP4184352B2 (en) | 2005-03-04 | 2005-03-04 | Positive resist composition and resist pattern forming method |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200643627A true TW200643627A (en) | 2006-12-16 |
TWI302639B TWI302639B (en) | 2008-11-01 |
Family
ID=36953142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095104927A TWI302639B (en) | 2005-03-04 | 2006-02-14 | Positive resist composition and process for forming resist pattern |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4184352B2 (en) |
KR (1) | KR100881304B1 (en) |
TW (1) | TWI302639B (en) |
WO (1) | WO2006095540A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101458469B (en) * | 2007-12-14 | 2012-07-04 | 株式会社理光 | Electrophotography image forming method and apparatus |
JP5844613B2 (en) * | 2010-11-17 | 2016-01-20 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | Photosensitive copolymer and photoresist composition |
CN105143291B (en) | 2013-04-23 | 2017-03-22 | 三菱瓦斯化学株式会社 | Novel alicyclic ester compound, and (meth)acrylic copolymer and photosensitive resin composition containing same |
KR102142648B1 (en) | 2013-12-16 | 2020-08-10 | 삼성디스플레이 주식회사 | Photo-sensitive resin composition, method for manufacturing organic layer using the composition, and display device comprising the organic layer |
US9951163B2 (en) | 2014-01-31 | 2018-04-24 | Mitsubishi Gas Chemical Company, Inc. | (Meth)acrylate compound, (meth)acrylic copolymer and photosensitive resin composition containing same |
CN105980347B (en) | 2014-02-14 | 2019-08-16 | 三菱瓦斯化学株式会社 | The manufacturing method of novel ester ring type ester compounds, novel ester ring type ester compounds, (methyl) acrylic acid series copolymer being polymerized and the photosensitive polymer combination comprising it |
JP5802785B2 (en) * | 2014-03-24 | 2015-11-04 | 富士フイルム株式会社 | Pattern forming method and resist composition |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3587413B2 (en) * | 1995-12-20 | 2004-11-10 | 東京応化工業株式会社 | Chemically amplified resist composition and acid generator used therein |
JP4069497B2 (en) * | 1998-06-10 | 2008-04-02 | Jsr株式会社 | Radiation sensitive resin composition |
JP3757731B2 (en) * | 1999-01-28 | 2006-03-22 | 住友化学株式会社 | Resist composition |
JP3785846B2 (en) * | 1999-02-05 | 2006-06-14 | 住友化学株式会社 | Chemically amplified positive resist composition |
JP4178645B2 (en) * | 1999-02-09 | 2008-11-12 | Jsr株式会社 | Radiation sensitive resin composition |
JP4329214B2 (en) * | 2000-03-28 | 2009-09-09 | 住友化学株式会社 | Chemically amplified positive resist composition |
AU2003289430A1 (en) * | 2002-12-26 | 2004-07-22 | Tokyo Ohka Kogyo Co., Ltd. | Positive resist composition and method for forming resist pattern |
JP4152810B2 (en) * | 2003-06-13 | 2008-09-17 | 東京応化工業株式会社 | Positive resist composition and resist pattern forming method |
TWI316645B (en) * | 2003-09-18 | 2009-11-01 | Tokyo Ohka Kogyo Co Ltd | Positive resist composition and resist pattern formation method |
-
2005
- 2005-03-04 JP JP2005060518A patent/JP4184352B2/en active Active
-
2006
- 2006-02-14 WO PCT/JP2006/302558 patent/WO2006095540A1/en active Application Filing
- 2006-02-14 TW TW095104927A patent/TWI302639B/en active
- 2006-02-14 KR KR1020077019784A patent/KR100881304B1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2006243474A (en) | 2006-09-14 |
TWI302639B (en) | 2008-11-01 |
WO2006095540A1 (en) | 2006-09-14 |
JP4184352B2 (en) | 2008-11-19 |
KR20070101367A (en) | 2007-10-16 |
KR100881304B1 (en) | 2009-02-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200643627A (en) | Positive resist composition and process for forming resist pattern | |
TW200613918A (en) | Evaluation method of resist composition | |
TW200741347A (en) | Resist composition for use in immersion lithography and process for forming resist pattern | |
TW200627071A (en) | Resist composition for immersion exposure and method for forming resist pattern | |
TW200707108A (en) | Positive resist composition and method for forming resist pattern | |
TW200641522A (en) | Positive resist composition, method for forming resist pattern and compound | |
TW200715057A (en) | Positive resist composition and method for forming resist pattern | |
TW200801810A (en) | Resist composition for immersion lithography, and method for forming resist pattern | |
TW200619850A (en) | Resist composition and resist pattern forming method | |
TW200641536A (en) | Positive resist composition and pattern-forming method using the same | |
TW200600972A (en) | Positive resist composition and method of forming a resist pattern | |
TW200705106A (en) | Positive photosensitive composition and pattern forming method using the same | |
TW200745759A (en) | A chemically amplified positive resist composition | |
WO2008120722A1 (en) | Polymer, and film or sheet comprising the same | |
MX2009000520A (en) | Methods for producing fuels and solvents. | |
TW200606581A (en) | A chemically amplified positive resist composition, a haloester derivative and a process for producing the same | |
WO2009019575A3 (en) | Underlayer coating composition based on a crosslinkable polymer | |
WO2006083344A3 (en) | Liquid stable thiol-acrylate/vinyl ether compositions | |
NZ598184A (en) | Composition for aqueous coating material and process for its production, and two-component curable aqueous coating material kit | |
TW200707107A (en) | Positive resist composition and method for forming resist pattern | |
TW200700921A (en) | Positive photoresist composition, thick-film photoresist layer laminate, method for forming thick-film resist pattern and method for forming connection terminal | |
TW200608143A (en) | Positive resist composition and method for forming resist pattern | |
TW200630753A (en) | Positive resist composition and resist pattern formation method | |
GB2487130B (en) | Bilayer systems including a polydimethylglutarimide-based bottom layer and compositions thereof | |
TW200604747A (en) | Positive resist composition and resist pattern formation method |