TW200641964A - Cleaning composition solution and method of cleaning wafers using the same - Google Patents

Cleaning composition solution and method of cleaning wafers using the same

Info

Publication number
TW200641964A
TW200641964A TW094116324A TW94116324A TW200641964A TW 200641964 A TW200641964 A TW 200641964A TW 094116324 A TW094116324 A TW 094116324A TW 94116324 A TW94116324 A TW 94116324A TW 200641964 A TW200641964 A TW 200641964A
Authority
TW
Taiwan
Prior art keywords
cleaning
wafer
composition solution
layer
polishing
Prior art date
Application number
TW094116324A
Other languages
Chinese (zh)
Other versions
TWI319203B (en
Inventor
Hsin-Hsien Lu
Han-Hsin Kuo
Ying-Ho Chen
Syun-Ming Jang
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW94116324A priority Critical patent/TWI319203B/en
Publication of TW200641964A publication Critical patent/TW200641964A/en
Application granted granted Critical
Publication of TWI319203B publication Critical patent/TWI319203B/en

Links

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

A method for the cleaning of wafers typically during a chemical mechanical polishing (CMP) process. The method includes polishing a material layer on a wafer in sequential polishing steps, rinsing the wafer using a novel surfactant composition solution after at least one of the polishing steps and rinsing of the wafer using deionized water, respectively. The surfactant composition solution imparts a generally hydrophilic character to a hydrophobic material layer such as a low-k dielectric layer on the wafer. Consequently, the layer is rendered amenable to cleaning by deionized water, thereby significantly enhancing the removal of particles from the layer and reducing the number of defects related to the CMP process.
TW94116324A 2005-05-19 2005-05-19 Cleaning composition solution and method of cleaning wafers using the same TWI319203B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94116324A TWI319203B (en) 2005-05-19 2005-05-19 Cleaning composition solution and method of cleaning wafers using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94116324A TWI319203B (en) 2005-05-19 2005-05-19 Cleaning composition solution and method of cleaning wafers using the same

Publications (2)

Publication Number Publication Date
TW200641964A true TW200641964A (en) 2006-12-01
TWI319203B TWI319203B (en) 2010-01-01

Family

ID=45073604

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94116324A TWI319203B (en) 2005-05-19 2005-05-19 Cleaning composition solution and method of cleaning wafers using the same

Country Status (1)

Country Link
TW (1) TWI319203B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9592585B2 (en) 2012-12-28 2017-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for CMP station cleanliness
CN113161223A (en) * 2020-01-07 2021-07-23 夏泰鑫半导体(青岛)有限公司 Method and system for processing wafer with polycrystalline silicon layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9592585B2 (en) 2012-12-28 2017-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for CMP station cleanliness
CN113161223A (en) * 2020-01-07 2021-07-23 夏泰鑫半导体(青岛)有限公司 Method and system for processing wafer with polycrystalline silicon layer

Also Published As

Publication number Publication date
TWI319203B (en) 2010-01-01

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