TW200634884A - Analysing system and charged particle beam device - Google Patents

Analysing system and charged particle beam device

Info

Publication number
TW200634884A
TW200634884A TW095106002A TW95106002A TW200634884A TW 200634884 A TW200634884 A TW 200634884A TW 095106002 A TW095106002 A TW 095106002A TW 95106002 A TW95106002 A TW 95106002A TW 200634884 A TW200634884 A TW 200634884A
Authority
TW
Taiwan
Prior art keywords
detector
charged particle
particle beam
beam device
energy beam
Prior art date
Application number
TW095106002A
Other languages
English (en)
Other versions
TWI330861B (en
Inventor
Juergen Frosien
Stefan Lanio
Original Assignee
Integrated Circuit Testing
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Integrated Circuit Testing filed Critical Integrated Circuit Testing
Publication of TW200634884A publication Critical patent/TW200634884A/zh
Application granted granted Critical
Publication of TWI330861B publication Critical patent/TWI330861B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/44—Energy spectrometers, e.g. alpha-, beta-spectrometers
    • H01J49/46—Static spectrometers
    • H01J49/48—Static spectrometers using electrostatic analysers, e.g. cylindrical sector, Wien filter
    • H01J49/488—Static spectrometers using electrostatic analysers, e.g. cylindrical sector, Wien filter with retarding grids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2446—Position sensitive detectors
    • H01J2237/24465—Sectored detectors, e.g. quadrants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24475—Scattered electron detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Tubes For Measurement (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW095106002A 2005-03-17 2006-02-22 Analysing system and charged particle beam device TWI330861B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05005886A EP1703537B9 (en) 2005-03-17 2005-03-17 Analysing system and charged particle beam device

Publications (2)

Publication Number Publication Date
TW200634884A true TW200634884A (en) 2006-10-01
TWI330861B TWI330861B (en) 2010-09-21

Family

ID=35509284

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095106002A TWI330861B (en) 2005-03-17 2006-02-22 Analysing system and charged particle beam device

Country Status (6)

Country Link
US (1) US7439500B2 (zh)
EP (1) EP1703537B9 (zh)
JP (1) JP4523558B2 (zh)
KR (1) KR100776067B1 (zh)
DE (1) DE602005006967D1 (zh)
TW (1) TWI330861B (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103069536A (zh) * 2010-04-09 2013-04-24 卡尔蔡司Smt有限责任公司 带电粒子探测系统和多小波束检查系统
US8993981B2 (en) 2009-06-12 2015-03-31 Carl Zeiss Microscopy, Llc Charged particle source with light monitoring for tip temperature determination
TWI603363B (zh) * 2012-12-21 2017-10-21 Ｉｃｔ積體電路測試股份有限公司 二次帶電粒子偵測系統、帶電粒子束裝置及偵測二次帶電粒子的方法
TWI748379B (zh) * 2019-03-20 2021-12-01 德商Ｉｃｔ積體電路測試股份有限公司 用於帶電粒子裝置的分束器及產生帶電粒子射束之方法

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US9153413B2 (en) 2007-02-22 2015-10-06 Applied Materials Israel, Ltd. Multi-beam scanning electron beam device and methods of using the same
EP2122655A2 (en) * 2007-02-22 2009-11-25 Applied Materials Israel Ltd. High throughput sem tool
EP2051278B1 (en) * 2007-10-17 2011-09-07 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Energy filter for cold field emission electron beam apparatus
US7838833B1 (en) * 2007-11-30 2010-11-23 Kla-Tencor Technologies Corporation Apparatus and method for e-beam dark imaging with perspective control
TWI479570B (zh) 2007-12-26 2015-04-01 Nawotec Gmbh 從樣本移除材料之方法及系統
EP2219204B1 (en) 2009-02-12 2012-03-21 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Arrangement and method for the contrast improvement in a charged particle beam device for inspecting a specimen
CN102484027A (zh) * 2009-07-17 2012-05-30 克拉-坦科股份有限公司 带电粒子能量分析器
DE102010061178A1 (de) * 2010-12-13 2012-06-14 Gsi Helmholtzzentrum Für Schwerionenforschung Gmbh Chromatischer Energiefilter
EP2660825B1 (en) * 2010-12-27 2015-04-01 Sumitomo Heavy Industries, Ltd. Energy degrader and charged-particle irradiation system provided with same
EP2511939B1 (en) * 2011-04-13 2016-03-23 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Arrangement and method for the contrast improvement in a charged particle beam device for inspecting a specimen
JP5663412B2 (ja) 2011-06-16 2015-02-04 株式会社日立ハイテクノロジーズ 荷電粒子線装置
WO2013062158A1 (ko) * 2011-10-27 2013-05-02 에스엔유 프리시젼 주식회사 주사전자현미경용 빈필터 제어방법 및 전자빔 정렬 기능을 구비한 주사전자현미경
EP2629317B1 (en) * 2012-02-20 2015-01-28 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with dynamic focus and method of operating thereof
EP2654069B1 (en) * 2012-04-16 2016-02-24 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi channel detector, optics therefore and method of operating thereof
EP2682978B1 (en) * 2012-07-05 2016-10-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Contamination reduction electrode for particle detector
JP6216515B2 (ja) * 2013-01-30 2017-10-18 株式会社日立ハイテクノロジーズ 電子ビーム装置、及び電子ビーム観察方法
US8933414B2 (en) * 2013-02-27 2015-01-13 Fei Company Focused ion beam low kV enhancement
JP6177919B2 (ja) * 2013-08-30 2017-08-09 株式会社日立製作所 スピン検出器、及び荷電粒子線装置および光電子分光装置
EP2879155B1 (en) * 2013-12-02 2018-04-25 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-beam system for high throughput EBI
JP5899299B2 (ja) * 2014-12-05 2016-04-06 株式会社日立ハイテクノロジーズ 荷電粒子線装置
KR20170131583A (ko) 2015-03-24 2017-11-29 케이엘에이-텐코 코포레이션 향상된 이미지 빔 안정화 및 인터로게이션을 갖는 하전 입자 현미경 검사를 위한 방법 및 시스템
US10192716B2 (en) * 2015-09-21 2019-01-29 Kla-Tencor Corporation Multi-beam dark field imaging
JP6882972B2 (ja) * 2017-10-24 2021-06-02 株式会社日立ハイテク 荷電粒子線装置、断面形状推定プログラム
US11239043B2 (en) * 2020-05-19 2022-02-01 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device and method for inspecting and/or imaging a sample

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DE3941178A1 (de) * 1989-12-13 1991-06-20 Siemens Ag Verfahren zur quantitativen potentialmessung mit einer korpuskularsonde
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US5644132A (en) * 1994-06-20 1997-07-01 Opan Technologies Ltd. System for high resolution imaging and measurement of topographic and material features on a specimen
WO1996008835A1 (en) * 1994-09-13 1996-03-21 Metrologix, Inc. Particle beam detector providing z-axis and topographic contrast
US5894124A (en) * 1995-03-17 1999-04-13 Hitachi, Ltd. Scanning electron microscope and its analogous device
JP3434165B2 (ja) 1997-04-18 2003-08-04 株式会社日立製作所 走査電子顕微鏡
JPH1167139A (ja) * 1997-08-25 1999-03-09 Hitachi Ltd 走査電子顕微鏡
JP3661592B2 (ja) * 1998-03-27 2005-06-15 株式会社日立製作所 パターン検査装置
KR20000034962A (ko) * 1998-11-19 2000-06-26 하이든 마틴 하전입자의 이중-모드 검출 장치 및 방법
JP3728956B2 (ja) * 1998-12-22 2005-12-21 株式会社日立製作所 回路パターン検査装置
DE60042758D1 (de) * 2000-03-31 2009-09-24 Hitachi Ltd Abtast-elektronenmikroskop
JP2001357808A (ja) * 2000-06-14 2001-12-26 Hitachi Ltd 回路パターン検査装置および方法
US6888150B2 (en) * 2001-12-13 2005-05-03 Sony International (Europe) Gmbh Method for defect and conductivity engineering of a conducting nanoscaled structure

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8993981B2 (en) 2009-06-12 2015-03-31 Carl Zeiss Microscopy, Llc Charged particle source with light monitoring for tip temperature determination
TWI506665B (zh) * 2009-06-12 2015-11-01 Carl Zeiss Microscopy Llc 氣體場離子系統、使用一氣體場離子源的方法以及操作一氣體場離子裝置之方法
CN103069536A (zh) * 2010-04-09 2013-04-24 卡尔蔡司Smt有限责任公司 带电粒子探测系统和多小波束检查系统
CN103069536B (zh) * 2010-04-09 2016-04-06 卡尔蔡司Smt有限责任公司 带电粒子探测系统和多小波束检查系统
US9336981B2 (en) 2010-04-09 2016-05-10 Applied Materials Israel Ltd. Charged particle detection system and multi-beamlet inspection system
TWI603363B (zh) * 2012-12-21 2017-10-21 Ｉｃｔ積體電路測試股份有限公司 二次帶電粒子偵測系統、帶電粒子束裝置及偵測二次帶電粒子的方法
TWI748379B (zh) * 2019-03-20 2021-12-01 德商Ｉｃｔ積體電路測試股份有限公司 用於帶電粒子裝置的分束器及產生帶電粒子射束之方法

Also Published As

Publication number Publication date
US20060226361A1 (en) 2006-10-12
KR100776067B1 (ko) 2007-11-15
US7439500B2 (en) 2008-10-21
EP1703537B1 (en) 2008-05-21
TWI330861B (en) 2010-09-21
KR20060101263A (ko) 2006-09-22
EP1703537A1 (en) 2006-09-20
DE602005006967D1 (de) 2008-07-03
EP1703537B9 (en) 2008-10-22
JP2006261111A (ja) 2006-09-28
JP4523558B2 (ja) 2010-08-11

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MM4A Annulment or lapse of patent due to non-payment of fees