TW200629010A - Photoresist strip using solvent vapor - Google Patents

Photoresist strip using solvent vapor

Info

Publication number
TW200629010A
TW200629010A TW094142768A TW94142768A TW200629010A TW 200629010 A TW200629010 A TW 200629010A TW 094142768 A TW094142768 A TW 094142768A TW 94142768 A TW94142768 A TW 94142768A TW 200629010 A TW200629010 A TW 200629010A
Authority
TW
Taiwan
Prior art keywords
solvent vapor
photoresist
photoresist strip
processing
wafer
Prior art date
Application number
TW094142768A
Other languages
English (en)
Inventor
Woo-Sik Yoo
Original Assignee
Wafermasters Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wafermasters Inc filed Critical Wafermasters Inc
Publication of TW200629010A publication Critical patent/TW200629010A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31127Etching organic layers
    • H01L21/31133Etching organic layers by chemical means
    • H01L21/31138Etching organic layers by chemical means by dry-etching
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/427Stripping or agents therefor using plasma means only

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW094142768A 2004-12-10 2005-12-05 Photoresist strip using solvent vapor TW200629010A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/009,764 US20060128160A1 (en) 2004-12-10 2004-12-10 Photoresist strip using solvent vapor

Publications (1)

Publication Number Publication Date
TW200629010A true TW200629010A (en) 2006-08-16

Family

ID=36578414

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094142768A TW200629010A (en) 2004-12-10 2005-12-05 Photoresist strip using solvent vapor

Country Status (3)

Country Link
US (1) US20060128160A1 (zh)
TW (1) TW200629010A (zh)
WO (1) WO2006062795A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI749410B (zh) * 2019-11-28 2021-12-11 智和股份有限公司 物料快速脫除溶劑之裝置及製程

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030036242A1 (en) * 2001-08-16 2003-02-20 Haining Yang Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions
US7642205B2 (en) * 2005-04-08 2010-01-05 Mattson Technology, Inc. Rapid thermal processing using energy transfer layers
US8429526B2 (en) * 2006-04-10 2013-04-23 Oracle International Corporation Efficient evaluation for diff of XML documents
KR20090094368A (ko) * 2006-12-11 2009-09-04 어플라이드 머티어리얼스, 인코포레이티드 건식 포토레지스트 스트립핑 프로세스 및 장치
US8026200B2 (en) * 2008-05-01 2011-09-27 Advanced Technology Materials, Inc. Low pH mixtures for the removal of high density implanted resist
TW201043724A (en) * 2009-03-16 2010-12-16 Alta Devices Inc Heating lamp system and methods thereof
US20110146724A1 (en) * 2009-12-19 2011-06-23 Mr. WAI MUN LEE Photoresist stripping solutions
CN103472694B (zh) * 2013-09-26 2016-05-04 京东方科技集团股份有限公司 光刻胶的去除方法、曝光装置以及显示基板的制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5201960A (en) * 1991-02-04 1993-04-13 Applied Photonics Research, Inc. Method for removing photoresist and other adherent materials from substrates
KR940012061A (ko) * 1992-11-27 1994-06-22 가나이 쯔또무 유기물제거방법 및 그 방법을 이용하기 위한 유기물제거장치
US5785875A (en) * 1996-02-13 1998-07-28 Micron Technology, Inc. Photoresist removal process using heated solvent vapor
US7264680B2 (en) * 1997-05-09 2007-09-04 Semitool, Inc. Process and apparatus for treating a workpiece using ozone
JP2963443B1 (ja) * 1998-06-19 1999-10-18 キヤノン販売株式会社 半導体装置の製造装置
US6499425B1 (en) * 1999-01-22 2002-12-31 Micron Technology, Inc. Quasi-remote plasma processing method and apparatus
US6228563B1 (en) * 1999-09-17 2001-05-08 Gasonics International Corporation Method and apparatus for removing post-etch residues and other adherent matrices
US6740597B1 (en) * 2000-08-31 2004-05-25 Micron Technology, Inc. Methods of removing at least some of a material from a semiconductor substrate
JP4014127B2 (ja) * 2000-10-04 2007-11-28 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US6562700B1 (en) * 2001-05-31 2003-05-13 Lsi Logic Corporation Process for removal of resist mask over low k carbon-doped silicon oxide dielectric material of an integrated circuit structure, and removal of residues from via etch and resist mask removal
KR100442869B1 (ko) * 2002-02-02 2004-08-02 삼성전자주식회사 반도체 기판 세정공정용 반도체 제조장치 및 그를 이용한반도체 기판 세정공정

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI749410B (zh) * 2019-11-28 2021-12-11 智和股份有限公司 物料快速脫除溶劑之裝置及製程

Also Published As

Publication number Publication date
WO2006062795A3 (en) 2007-05-18
WO2006062795A2 (en) 2006-06-15
US20060128160A1 (en) 2006-06-15

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