TW200626733A - Metal alloy wire for bonding wire having excellent bonding properties, linearity, and resin flow resistance properties - Google Patents

Metal alloy wire for bonding wire having excellent bonding properties, linearity, and resin flow resistance properties

Info

Publication number
TW200626733A
TW200626733A TW094144861A TW94144861A TW200626733A TW 200626733 A TW200626733 A TW 200626733A TW 094144861 A TW094144861 A TW 094144861A TW 94144861 A TW94144861 A TW 94144861A TW 200626733 A TW200626733 A TW 200626733A
Authority
TW
Taiwan
Prior art keywords
wire
properties
bonding
metal alloy
linearity
Prior art date
Application number
TW094144861A
Other languages
Chinese (zh)
Other versions
TWI391503B (en
Inventor
Kazunari Maki
Yuji Nakata
Masayoshi Nagao
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of TW200626733A publication Critical patent/TW200626733A/en
Application granted granted Critical
Publication of TWI391503B publication Critical patent/TWI391503B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
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    • H01L2924/01079—Gold [Au]
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    • H01L2924/01082—Lead [Pb]
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    • H01L2924/20—Parameters
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    • H01L2924/20751—Diameter ranges larger or equal to 10 microns less than 20 microns

Abstract

The present invention provides: a metal alloy wire for a bonding wire that has excellent bonding properties, linearity, and resin flow resistance properties. [Solution] The metal alloy for a bonding wire has a component composition in which Ca: 40-80 ppm and Eu:5-40 ppm are contained, Be: 1-10 ppm is contained as required, one or two kinds or more of Ba, Sr, Bi, Y, La, Ce, Pr, Nd, Sm, Tb, Ho, Er, Tm, Yb and Lu totaling 5-19 ppm are contained as required, and moreover Ag: 1-10 ppm is contained as required, and the rest is composed of Au and unavoidable impurities, wherein assuming that the 0.2% proof stress of the metal alloy wire for a bonding wire is σ0.2, Young's modulus is E, and elongation is EL, then E ≥ 75GPa, (σ 0.2/E) ≥ 2.2×10-3, and 3% < EL ≤10%.
TW094144861A 2004-12-21 2005-12-16 Wire with gold alloy wire TWI391503B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004369381 2004-12-21
JP2005321153A JP4641248B2 (en) 2004-12-21 2005-11-04 Gold alloy wire for bonding wires with excellent bondability, straightness and resin flow resistance

Publications (2)

Publication Number Publication Date
TW200626733A true TW200626733A (en) 2006-08-01
TWI391503B TWI391503B (en) 2013-04-01

Family

ID=36960839

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094144861A TWI391503B (en) 2004-12-21 2005-12-16 Wire with gold alloy wire

Country Status (2)

Country Link
JP (1) JP4641248B2 (en)
TW (1) TWI391503B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5240890B2 (en) * 2006-08-07 2013-07-17 田中電子工業株式会社 Gold alloy wire for bonding wire with high initial bondability, high bond reliability, high roundness of crimped ball, high loop controllability and low specific resistance
CN104388861B (en) * 2014-10-10 2016-08-17 河南理工大学 A kind of polycrystalline series LED manufacture method of fine silver billon bonding line

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3104442B2 (en) * 1992-10-28 2000-10-30 住友金属鉱山株式会社 Bonding wire
JP3657087B2 (en) * 1996-07-31 2005-06-08 田中電子工業株式会社 Gold alloy wire for wedge bonding
JP3690902B2 (en) * 1996-07-31 2005-08-31 田中電子工業株式会社 Gold alloy wire for wedge bonding
JP3573321B2 (en) * 1996-12-11 2004-10-06 住友金属鉱山株式会社 Au bonding wire
JP3494175B2 (en) * 2001-02-19 2004-02-03 住友金属鉱山株式会社 Bonding wire and manufacturing method thereof
JP2004255464A (en) * 2003-02-03 2004-09-16 Nippon Steel Corp Metal wire and method for manufacturing the same
US8440137B2 (en) * 2004-11-26 2013-05-14 Tanaka Denshi Kogyo K.K. Au bonding wire for semiconductor device

Also Published As

Publication number Publication date
JP4641248B2 (en) 2011-03-02
TWI391503B (en) 2013-04-01
JP2006203164A (en) 2006-08-03

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