TW200625405A - Method of forming a photoresist pattern - Google Patents

Method of forming a photoresist pattern

Info

Publication number
TW200625405A
TW200625405A TW094140267A TW94140267A TW200625405A TW 200625405 A TW200625405 A TW 200625405A TW 094140267 A TW094140267 A TW 094140267A TW 94140267 A TW94140267 A TW 94140267A TW 200625405 A TW200625405 A TW 200625405A
Authority
TW
Taiwan
Prior art keywords
photoresist pattern
forming
photolithography system
semiconductor wafer
photoresist
Prior art date
Application number
TW094140267A
Other languages
English (en)
Other versions
TWI383431B (zh
Inventor
Christopher J Smith
Steven M Hues
Cassandra M Jordan Hawk
Amanda M Kroll
Andrew G Nagy
Paul W Winebarger
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200625405A publication Critical patent/TW200625405A/zh
Application granted granted Critical
Publication of TWI383431B publication Critical patent/TWI383431B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW094140267A 2004-11-30 2005-11-16 形成一光阻圖案之方法 TWI383431B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2004/040237 WO2006060015A1 (en) 2004-11-30 2004-11-30 Method for forming a photoresist pattern

Publications (2)

Publication Number Publication Date
TW200625405A true TW200625405A (en) 2006-07-16
TWI383431B TWI383431B (zh) 2013-01-21

Family

ID=36565341

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094140267A TWI383431B (zh) 2004-11-30 2005-11-16 形成一光阻圖案之方法

Country Status (4)

Country Link
JP (1) JP2008522403A (zh)
CN (1) CN100468642C (zh)
TW (1) TWI383431B (zh)
WO (1) WO2006060015A1 (zh)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0822945A (ja) * 1994-07-07 1996-01-23 Fujitsu Ltd 半導体装置の製造方法
JPH08339950A (ja) * 1995-06-09 1996-12-24 Sony Corp フォトレジストパターン形成方法及びフォトレジスト処理装置
JPH10261624A (ja) * 1997-03-19 1998-09-29 Nec Corp エッチング方法及び多層配線構造
JPH1145845A (ja) * 1997-07-24 1999-02-16 Fujitsu Ltd 半導体装置の製造方法及びファンフィルタユニット
US6541164B1 (en) * 1997-10-22 2003-04-01 Applied Materials, Inc. Method for etching an anti-reflective coating
JPH11177080A (ja) * 1997-12-11 1999-07-02 Ricoh Co Ltd 半導体装置の製造方法
US6316168B1 (en) * 1999-04-12 2001-11-13 Siemens Aktiengesellschaft Top layer imaging lithography for semiconductor processing
JP4678665B2 (ja) * 2001-11-15 2011-04-27 東京エレクトロン株式会社 基板処理方法および基板処理装置
US6936551B2 (en) * 2002-05-08 2005-08-30 Applied Materials Inc. Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
TWI299535B (en) * 2002-09-24 2008-08-01 Extraction Systems Inc System and method for monitoring contamination
JP2004207590A (ja) * 2002-12-26 2004-07-22 Ｆａｓｌ Ｊａｐａｎ 株式会社 半導体装置の製造方法
JP4050631B2 (ja) * 2003-02-21 2008-02-20 株式会社ルネサステクノロジ 電子デバイスの製造方法
TWI240302B (en) * 2003-04-08 2005-09-21 Nanya Technology Corp Method for increasing adhesion of rework photoresist on oxynitride film

Also Published As

Publication number Publication date
CN100468642C (zh) 2009-03-11
WO2006060015A1 (en) 2006-06-08
JP2008522403A (ja) 2008-06-26
TWI383431B (zh) 2013-01-21
CN101044599A (zh) 2007-09-26

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees