TW200623336A - Method for manufacturing single side buried strap of deep trench - Google Patents
Method for manufacturing single side buried strap of deep trenchInfo
- Publication number
- TW200623336A TW200623336A TW093140108A TW93140108A TW200623336A TW 200623336 A TW200623336 A TW 200623336A TW 093140108 A TW093140108 A TW 093140108A TW 93140108 A TW93140108 A TW 93140108A TW 200623336 A TW200623336 A TW 200623336A
- Authority
- TW
- Taiwan
- Prior art keywords
- screen layer
- layer
- etched
- screen
- single side
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 7
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 239000003990 capacitor Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000001039 wet etching Methods 0.000 abstract 1
Landscapes
- Semiconductor Memories (AREA)
Abstract
The present invention provides a method for manufacturing single side buried strap (SSBS). The method first provides a substrate with a deep trench (DT), and the DT further comprises a trench capacitor and a polysilicon layer covering on the trench capacitor. Then a first screen layer is deposited on the polysilicon layer. And a second screen layer is deposited on the first screen layer. After, atoms are implanted into the second screen layer by a tilted implantation process. The second screen layer without implanted atoms is etched by an etching process. Therefore, partial of the first screen layer is exposed. Next, atoms are implanted into the second screen and the exposed first screen layer by an ion implantation process. The exposed first screen layer is etched by a wet etching process. Finally, the non-etched first screen layer and the non-etched first screen layer is utilized as a hard mask to etch the polysilicon layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW093140108A TWI242844B (en) | 2004-12-22 | 2004-12-22 | Method for manufacturing single side buried strap of deep trench |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW093140108A TWI242844B (en) | 2004-12-22 | 2004-12-22 | Method for manufacturing single side buried strap of deep trench |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI242844B TWI242844B (en) | 2005-11-01 |
| TW200623336A true TW200623336A (en) | 2006-07-01 |
Family
ID=37022619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093140108A TWI242844B (en) | 2004-12-22 | 2004-12-22 | Method for manufacturing single side buried strap of deep trench |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI242844B (en) |
-
2004
- 2004-12-22 TW TW093140108A patent/TWI242844B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI242844B (en) | 2005-11-01 |
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