TW200504923A - Forming method of isolation region - Google Patents

Forming method of isolation region

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Publication number
TW200504923A
TW200504923A TW092120332A TW92120332A TW200504923A TW 200504923 A TW200504923 A TW 200504923A TW 092120332 A TW092120332 A TW 092120332A TW 92120332 A TW92120332 A TW 92120332A TW 200504923 A TW200504923 A TW 200504923A
Authority
TW
Taiwan
Prior art keywords
trench
semiconductor substrate
layer
isolation region
oxide layer
Prior art date
Application number
TW092120332A
Other languages
Chinese (zh)
Other versions
TWI326477B (en
Inventor
Ching-Nan Hsiao
Chung-Lin Huang
Chia-Cheng Chen
Original Assignee
Nanya Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanya Technology Corp filed Critical Nanya Technology Corp
Priority to TW092120332A priority Critical patent/TW200504923A/en
Publication of TW200504923A publication Critical patent/TW200504923A/en
Application granted granted Critical
Publication of TWI326477B publication Critical patent/TWI326477B/zh

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Abstract

A kind of method for forming the isolation region is provided in the present invention. At first, a semiconductor substrate, which has an ion implantation region and a mask layer, is provided. Then, a trench exposing the ion implantation region is formed on the semiconductor substrate; and a doped glass layer is formed on the trench bottom portion. A spacer is then formed on the sidewall of the trench; and the doped glass layer is removed. After that, a blocking layer is formed on the trench bottom portion; and an isotropic etching step is conducted onto the semiconductor substrate to form a side trench at the trench bottom portion. The blocking layer is removed; and a thermal oxidization step is performed onto the semiconductor substrate having the exposed surface to form the first oxide layer. The second oxide layer is formed on the trench such that the first oxide layer and the second oxide layer commonly form a combined isolation region.
TW092120332A 2003-07-25 2003-07-25 Forming method of isolation region TW200504923A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW092120332A TW200504923A (en) 2003-07-25 2003-07-25 Forming method of isolation region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW092120332A TW200504923A (en) 2003-07-25 2003-07-25 Forming method of isolation region

Publications (2)

Publication Number Publication Date
TW200504923A true TW200504923A (en) 2005-02-01
TWI326477B TWI326477B (en) 2010-06-21

Family

ID=45074344

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092120332A TW200504923A (en) 2003-07-25 2003-07-25 Forming method of isolation region

Country Status (1)

Country Link
TW (1) TW200504923A (en)

Also Published As

Publication number Publication date
TWI326477B (en) 2010-06-21

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