TW200623194A - Apparatus and methods for two-dimensional ion beam profiling - Google Patents

Apparatus and methods for two-dimensional ion beam profiling

Info

Publication number
TW200623194A
TW200623194A TW094138534A TW94138534A TW200623194A TW 200623194 A TW200623194 A TW 200623194A TW 094138534 A TW094138534 A TW 094138534A TW 94138534 A TW94138534 A TW 94138534A TW 200623194 A TW200623194 A TW 200623194A
Authority
TW
Taiwan
Prior art keywords
ion beam
methods
current sensors
dimensional ion
beam profiling
Prior art date
Application number
TW094138534A
Other languages
English (en)
Inventor
Gordon C Angel
Edward D Maclntosh
Thomas A Schaefer
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Publication of TW200623194A publication Critical patent/TW200623194A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
TW094138534A 2004-11-05 2005-11-03 Apparatus and methods for two-dimensional ion beam profiling TW200623194A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/981,887 US7109499B2 (en) 2004-11-05 2004-11-05 Apparatus and methods for two-dimensional ion beam profiling

Publications (1)

Publication Number Publication Date
TW200623194A true TW200623194A (en) 2006-07-01

Family

ID=36315383

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094138534A TW200623194A (en) 2004-11-05 2005-11-03 Apparatus and methods for two-dimensional ion beam profiling

Country Status (6)

Country Link
US (1) US7109499B2 (zh)
JP (1) JP2008519414A (zh)
KR (1) KR101185370B1 (zh)
CN (1) CN101167153B (zh)
TW (1) TW200623194A (zh)
WO (1) WO2006052622A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI828135B (zh) * 2021-07-15 2024-01-01 台灣積體電路製造股份有限公司 半導體製造方法

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7338683B2 (en) * 2004-05-10 2008-03-04 Superpower, Inc. Superconductor fabrication processes
US7598505B2 (en) * 2005-03-08 2009-10-06 Axcelis Technologies, Inc. Multichannel ion gun
US7417242B2 (en) * 2005-04-01 2008-08-26 Axcelis Technologies, Inc. Method of measuring ion beam position
KR100679263B1 (ko) * 2005-09-22 2007-02-05 삼성전자주식회사 페러데이 시스템 및 그를 이용한 이온주입설비
US7176470B1 (en) * 2005-12-22 2007-02-13 Varian Semiconductor Equipment Associates, Inc. Technique for high-efficiency ion implantation
US20080017811A1 (en) * 2006-07-18 2008-01-24 Collart Erik J H Beam stop for an ion implanter
US7683348B2 (en) * 2006-10-11 2010-03-23 Axcelis Technologies, Inc. Sensor for ion implanter
US7701230B2 (en) * 2007-04-30 2010-04-20 Axcelis Technologies, Inc. Method and system for ion beam profiling
US7755066B2 (en) * 2008-03-28 2010-07-13 Varian Semiconductor Equipment Associates, Inc. Techniques for improved uniformity tuning in an ion implanter system
US8168941B2 (en) * 2009-01-22 2012-05-01 Axcelis Technologies, Inc. Ion beam angle calibration and emittance measurement system for ribbon beams
US8309938B2 (en) * 2009-09-29 2012-11-13 Varian Semiconductor Equipment Associates, Inc. Ion beam incident angle detection assembly and method
CN102115874B (zh) * 2009-12-31 2012-12-19 上海凯世通半导体有限公司 束流密度分布和角度分布测量装置及方法、束流控制方法
CN102646567A (zh) * 2011-02-16 2012-08-22 和舰科技(苏州)有限公司 一种离子植入机用离子束监测装置
US9218938B2 (en) * 2011-09-23 2015-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Beam monitoring device, method, and system
US8766207B2 (en) * 2011-09-23 2014-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Beam monitoring device, method, and system
CN103295864B (zh) * 2012-03-02 2016-03-09 无锡华润上华科技有限公司 离子束浓度的检测方法及离子束检测系统
US9490185B2 (en) * 2012-08-31 2016-11-08 Axcelis Technologies, Inc. Implant-induced damage control in ion implantation
US20170005013A1 (en) 2015-06-30 2017-01-05 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Technique
CN105044764B (zh) * 2015-08-31 2017-11-10 中广核达胜加速器技术有限公司 一种电子加速器束流动态采集装置
US10222400B2 (en) * 2016-09-21 2019-03-05 Nissin Ion Equipment Co., Ltd. Beam current measuring device and charged particle beam irradiation apparatus
US10431421B2 (en) * 2017-11-03 2019-10-01 Varian Semiconductor Equipment Associates, Inc Apparatus and techniques for beam mapping in ion beam system
CN110556281B (zh) * 2018-06-01 2024-01-23 日新离子机器株式会社 离子束照射装置
KR102506984B1 (ko) * 2018-08-31 2023-03-08 주식회사 히타치하이테크 이온 밀링 장치
US10665421B2 (en) * 2018-10-10 2020-05-26 Applied Materials, Inc. In-situ beam profile metrology
CN111128656A (zh) * 2018-10-31 2020-05-08 北京中科信电子装备有限公司 一种宽带束束流二维检测的方法与装置
US11476084B2 (en) 2019-09-10 2022-10-18 Applied Materials, Inc. Apparatus and techniques for ion energy measurement in pulsed ion beams
JP7332437B2 (ja) 2019-11-01 2023-08-23 住友重機械イオンテクノロジー株式会社 イオン注入装置
US11598890B2 (en) 2020-06-17 2023-03-07 Battelle Energy Alliance, Llc Ion beam profiling system and related methods
CN112666594A (zh) * 2021-01-05 2021-04-16 中国原子能科学研究院 质子束流的测量装置及系统
CN114334591B (zh) * 2021-12-30 2024-03-08 粤芯半导体技术股份有限公司 离子束流分布的测定方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126918A (en) 1980-03-11 1981-10-05 Hitachi Ltd Injecting device for ion
US4980562A (en) 1986-04-09 1990-12-25 Varian Associates, Inc. Method and apparatus for high efficiency scanning in an ion implanter
JPS62295347A (ja) 1986-04-09 1987-12-22 イクリプス・イオン・テクノロジ−・インコ−ポレイテツド イオンビ−ム高速平行走査装置
JP2699170B2 (ja) * 1986-04-09 1998-01-19 イクリプス・イオン・テクノロジー・インコーポレイテッド イオンビーム走査方法および装置
US4751393A (en) 1986-05-16 1988-06-14 Varian Associates, Inc. Dose measurement and uniformity monitoring system for ion implantation
JPH0770296B2 (ja) 1989-05-15 1995-07-31 日新電機株式会社 イオン注入装置
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
US5811823A (en) 1996-02-16 1998-09-22 Eaton Corporation Control mechanisms for dosimetry control in ion implantation systems
JP3567749B2 (ja) 1998-07-22 2004-09-22 日新電機株式会社 荷電粒子ビームの分布測定方法およびそれに関連する方法
US6020592A (en) 1998-08-03 2000-02-01 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
US6050218A (en) 1998-09-28 2000-04-18 Eaton Corporation Dosimetry cup charge collection in plasma immersion ion implantation
US6847036B1 (en) * 1999-01-22 2005-01-25 University Of Washington Charged particle beam detection system
US6706541B1 (en) 1999-10-20 2004-03-16 Advanced Micro Devices, Inc. Method and apparatus for controlling wafer uniformity using spatially resolved sensors
JP3414337B2 (ja) * 1999-11-12 2003-06-09 日新電機株式会社 電磁界レンズの制御方法およびイオン注入装置
US6723998B2 (en) 2000-09-15 2004-04-20 Varian Semiconductor Equipment Associates, Inc. Faraday system for ion implanters
US6762423B2 (en) 2002-11-05 2004-07-13 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion beam neutralization in magnets

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI828135B (zh) * 2021-07-15 2024-01-01 台灣積體電路製造股份有限公司 半導體製造方法

Also Published As

Publication number Publication date
WO2006052622A2 (en) 2006-05-18
CN101167153B (zh) 2010-09-29
US7109499B2 (en) 2006-09-19
JP2008519414A (ja) 2008-06-05
US20060097195A1 (en) 2006-05-11
CN101167153A (zh) 2008-04-23
WO2006052622A3 (en) 2007-10-04
KR101185370B1 (ko) 2012-09-25
KR20070084236A (ko) 2007-08-24

Similar Documents

Publication Publication Date Title
TW200623194A (en) Apparatus and methods for two-dimensional ion beam profiling
WO2007115812A3 (en) Optoelectronic device for determining relative movements or relative positions of two objects
WO2020047010A8 (en) Increasing spatial array resolution
WO2009057114A3 (en) Optical sensor measurement and crosstalk evaluation
WO2009151867A3 (en) Multiple magnetic sensor ranging method and system
TW200641956A (en) Two dimensional stationary beam profile and angular mapping
TW200741185A (en) Optical wavefront sensor
WO2006072471A3 (de) Funkbasiertes ortungssystem mit synthetischer apertur
EP1778090A4 (en) ARRANGEMENT IN CONNECTION WITH INTRAORAL X-RAY PRESENTATION
WO2014113680A3 (en) Automated multiple location sampling analysis system
MX2012007689A (es) Metodo de agrupamiento mejorado para imagenes de pozo de sondeo.
WO2006110848A3 (en) Chromatographic and mass spectral data analysis
GB2470851A (en) Acoustic anisotrophy and imaging by means of high resolution azimuthal sampling
IN2012DN03405A (zh)
SG163509A1 (en) Lithographic apparatus and method for calibrating the same
PH12013000049A1 (en) Methods and apparatus to arbitrate valve position sensor redundancy
EA201290327A1 (ru) Усовершенствования в распределенном оптоволоконном считывании
WO2012133926A3 (en) Optical profile measuring apparatus, method for measuring profile, and method for manufacturing a structure with a profile
EP1568963A3 (en) Interferometric apparatus for measuring shapes
SG144163A1 (en) Lithographic apparatus with two-dimensional alignment measurement arrangement and two-dimensional alignment measurement method
WO2012142456A3 (en) Backscatter system with variable size of detector array
DE60331151D1 (de) Entfernungsmessgerät
TW200606403A (en) Optical type encoder
ATE421703T1 (de) Positionsbestimmende sonde für hochenergetische gammastrahlungen
WO2008043614A3 (de) Messelement mit einer als massverkörperung fungierenden spur und korrespondierendes, mit einem solchen messelement ausführbares messverfahren