TW200621815A - Composition for coating a photoresist pattern - Google Patents

Composition for coating a photoresist pattern

Info

Publication number
TW200621815A
TW200621815A TW094115477A TW94115477A TW200621815A TW 200621815 A TW200621815 A TW 200621815A TW 094115477 A TW094115477 A TW 094115477A TW 94115477 A TW94115477 A TW 94115477A TW 200621815 A TW200621815 A TW 200621815A
Authority
TW
Taiwan
Prior art keywords
composition
photoresist pattern
coating
pattern
formula
Prior art date
Application number
TW094115477A
Other languages
English (en)
Other versions
TWI311565B (en
Inventor
Geun-Su Lee
Seung-Chan Moon
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200621815A publication Critical patent/TW200621815A/zh
Application granted granted Critical
Publication of TWI311565B publication Critical patent/TWI311565B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
TW094115477A 2004-12-28 2005-05-13 Composition for coating a photoresist pattern TWI311565B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040113862A KR100682184B1 (ko) 2004-12-28 2004-12-28 감광막 패턴 수축용 조성물

Publications (2)

Publication Number Publication Date
TW200621815A true TW200621815A (en) 2006-07-01
TWI311565B TWI311565B (en) 2009-07-01

Family

ID=36612044

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094115477A TWI311565B (en) 2004-12-28 2005-05-13 Composition for coating a photoresist pattern

Country Status (5)

Country Link
US (1) US20060141390A1 (zh)
JP (1) JP4607663B2 (zh)
KR (1) KR100682184B1 (zh)
CN (1) CN1797195A (zh)
TW (1) TWI311565B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100745901B1 (ko) * 2005-05-19 2007-08-02 주식회사 하이닉스반도체 포토레지스트 패턴 코팅용 조성물 및 이를 이용한 미세패턴형성 방법
KR100732289B1 (ko) * 2005-05-30 2007-06-25 주식회사 하이닉스반도체 반도체 소자의 미세 콘택 형성방법
US8298744B2 (en) 2007-05-18 2012-10-30 Samsung Electronics Co., Ltd. Coating material for photoresist pattern and method of forming fine pattern using the same
US8323871B2 (en) * 2010-02-24 2012-12-04 International Business Machines Corporation Antireflective hardmask composition and a method of preparing a patterned material using same
KR101311447B1 (ko) * 2012-06-15 2013-09-25 금호석유화학 주식회사 아민 염 및 아민을 함유하는 중합체를 함유하는 미세패턴 형성용 수용성 수지 조성물 및 이를 이용한 미세패턴의 형성방법
KR101617169B1 (ko) * 2015-07-17 2016-05-03 영창케미칼 주식회사 포토리소그래피용 세정액 조성물 및 이를 이용한 포토레지스트 패턴의 형성방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU639844B2 (en) * 1990-11-09 1993-08-05 Otsuka Pharmaceutical Co., Ltd. Procaterol-containing plaster
DE19503546A1 (de) * 1995-02-03 1996-08-08 Basf Ag Wasserlösliche oder wasserdispergierbare Pfropfpolymerisate, Verfahren zu ihrer Herstellung und ihre Verwendung
WO2001077237A1 (fr) * 2000-04-11 2001-10-18 Seiko Epson Corporation Composition d'encre
JP3476081B2 (ja) * 2001-12-27 2003-12-10 東京応化工業株式会社 パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法
JP2004086203A (ja) * 2002-08-07 2004-03-18 Renesas Technology Corp 微細パターン形成材料および電子デバイスの製造方法
JP2004093832A (ja) * 2002-08-30 2004-03-25 Renesas Technology Corp 微細パターン形成材料、微細パターン形成方法および半導体装置の製造方法
KR100457044B1 (ko) * 2002-09-25 2004-11-10 삼성전자주식회사 반도체 소자의 제조 방법
US6818384B2 (en) * 2002-10-08 2004-11-16 Samsung Electronics Co., Ltd. Methods of fabricating microelectronic features by forming intermixed layers of water-soluble resins and resist materials
KR100929295B1 (ko) * 2003-06-30 2009-11-27 주식회사 하이닉스반도체 반도체소자의 미세 콘택 형성방법
EP1721951A4 (en) * 2004-03-03 2009-03-11 Nippon Kayaku Kk WATER - BASED ADHESIVE FOR POLARIZATION ELEMENTS AND POLARIZER OBTAINED BY USING THE SAID ADHESIVE
KR100618864B1 (ko) * 2004-09-23 2006-08-31 삼성전자주식회사 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법

Also Published As

Publication number Publication date
KR20060074747A (ko) 2006-07-03
US20060141390A1 (en) 2006-06-29
KR100682184B1 (ko) 2007-02-12
JP4607663B2 (ja) 2011-01-05
JP2006189757A (ja) 2006-07-20
TWI311565B (en) 2009-07-01
CN1797195A (zh) 2006-07-05

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