TW200620486A - Design method and architecture for power gate switch placement - Google Patents
Design method and architecture for power gate switch placementInfo
- Publication number
- TW200620486A TW200620486A TW094129877A TW94129877A TW200620486A TW 200620486 A TW200620486 A TW 200620486A TW 094129877 A TW094129877 A TW 094129877A TW 94129877 A TW94129877 A TW 94129877A TW 200620486 A TW200620486 A TW 200620486A
- Authority
- TW
- Taiwan
- Prior art keywords
- cells
- power
- power gate
- unoccupied
- logic
- Prior art date
Links
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/998,204 US7590962B2 (en) | 2003-12-17 | 2004-11-26 | Design method and architecture for power gate switch placement |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200620486A true TW200620486A (en) | 2006-06-16 |
TWI393189B TWI393189B (zh) | 2013-04-11 |
Family
ID=48803329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94129877A TWI393189B (zh) | 2004-11-26 | 2005-08-31 | 用於電源閘開關配置之設計方法與架構 |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI393189B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106055725A (zh) * | 2015-04-09 | 2016-10-26 | 三星电子株式会社 | 制造半导体装置的方法 |
TWI736810B (zh) * | 2018-01-17 | 2021-08-21 | 南韓商三星電子股份有限公司 | 包含切換單元的半導體元件 |
USRE49545E1 (en) | 2015-04-09 | 2023-06-06 | Samsung Electronics Co., Ltd. | Semiconductor device including polygon-shaped standard cell |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030218478A1 (en) * | 2002-05-24 | 2003-11-27 | Sani Mehdi Hamidi | Regulation of crowbar current in circuits employing footswitches/headswitches |
US7055007B2 (en) * | 2003-04-10 | 2006-05-30 | Arm Limited | Data processor memory circuit |
-
2005
- 2005-08-31 TW TW94129877A patent/TWI393189B/zh active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106055725A (zh) * | 2015-04-09 | 2016-10-26 | 三星电子株式会社 | 制造半导体装置的方法 |
USRE49545E1 (en) | 2015-04-09 | 2023-06-06 | Samsung Electronics Co., Ltd. | Semiconductor device including polygon-shaped standard cell |
TWI736810B (zh) * | 2018-01-17 | 2021-08-21 | 南韓商三星電子股份有限公司 | 包含切換單元的半導體元件 |
Also Published As
Publication number | Publication date |
---|---|
TWI393189B (zh) | 2013-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7200832B2 (en) | Macro cell for integrated circuit physical layer interface | |
Liu et al. | Power consumption estimation in CMOS VLSI chips | |
WO2010008948A3 (en) | Methods for cell phasing and placement in dynamic array architecture and implementation of the same | |
TW200620655A (en) | Self-biasing transistor structure and an SRAM cell having less than six transistors | |
CN100416579C (zh) | 埋入式可切换功率环 | |
TW200701437A (en) | Design and operation of a resistance switching memory cell with diode | |
WO2005054932A3 (en) | Simple matrix addressing in a display | |
GB2329281A (en) | Memory cell design with vertically stacked crossovers | |
TWI265521B (en) | Operation scheme with charge balance for charge trapping non-volatile memory | |
TW200733355A (en) | Memory array structure with strapping cells | |
TW200636929A (en) | Multi-thickness dielectric for semiconductor memory | |
TW200620486A (en) | Design method and architecture for power gate switch placement | |
TW200518092A (en) | Semiconductor memory device and method for manufacturing same | |
CN103166616B (zh) | 模拟开关电路结构 | |
Mukundrajan et al. | Ultra low power circuit design using tunnel FETs | |
NZ591078A (en) | Protective element for cyclist pants with an intermediate layer positioned between the internal cushions and the surface | |
TW200737640A (en) | Multi-chip module for battery power control | |
WO2005107360A3 (en) | Fuel cell system | |
IT1271946B (it) | Dispositivo di memoria a semiconduttore con struttura a tripla zona a pozzetto | |
TW200503254A (en) | Semiconductor memory device and manufacturing method for the same | |
BR0014858A (pt) | Métodos e vetores para recombinação de sìtio especìfico em plastìdios de células de plantas | |
TW200419799A (en) | Circuit layout structure | |
WO2008068336A3 (de) | Solarzelle und verfahren zur herstellung einer solarzelle | |
AU2003264084A8 (en) | Semiconductor memory with vertical memory transistors in a cell field arrangement with 1-2f2 cells | |
CN110555269B (zh) | 片上系统的顶层时钟树结构 |