TW200619238A - Polymer comound, positive resist composition and method for forming resist pattern - Google Patents

Polymer comound, positive resist composition and method for forming resist pattern

Info

Publication number
TW200619238A
TW200619238A TW094134017A TW94134017A TW200619238A TW 200619238 A TW200619238 A TW 200619238A TW 094134017 A TW094134017 A TW 094134017A TW 94134017 A TW94134017 A TW 94134017A TW 200619238 A TW200619238 A TW 200619238A
Authority
TW
Taiwan
Prior art keywords
group
lower alkyl
comound
polymer
hydrogen atom
Prior art date
Application number
TW094134017A
Other languages
Chinese (zh)
Other versions
TWI266770B (en
Inventor
Hideo Hada
Syogo Matsumaru
Masaru Takeshita
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200619238A publication Critical patent/TW200619238A/en
Application granted granted Critical
Publication of TWI266770B publication Critical patent/TWI266770B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A polymer compound includes a structural unit (a1) derived from an (α-lower alkyl) acrylic ester containing an acid dissociable dissolution inhibiting group, wherein the structural unit (a1) contains a structural unit (a1-0) represented by a general formula (a1-0), , wherein R represents a hydrogen atom or a lower alkyl group, R1 and R2 each represents, independently, a hydrogen atom or a lower alkyl group, R3 to R6 each represent, independently, a hydrogen atom or a lower alkyl group, s represents 0 or an integer from 1 to 3, t represents an integer from 1 to 3, X represents an aliphatic cyclic group which may include at least one substituent group selected from the group consisting of a lower alkyl group and a polar group, and Y represents a polar group.
TW094134017A 2004-10-06 2005-09-29 Polymer compound, positive resist composition and method for forming resist pattern TWI266770B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004293959A JP2006104353A (en) 2004-10-06 2004-10-06 Polymer compound, positive resist composition, and method for forming resist pattern

Publications (2)

Publication Number Publication Date
TW200619238A true TW200619238A (en) 2006-06-16
TWI266770B TWI266770B (en) 2006-11-21

Family

ID=36142472

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094134017A TWI266770B (en) 2004-10-06 2005-09-29 Polymer compound, positive resist composition and method for forming resist pattern

Country Status (3)

Country Link
JP (1) JP2006104353A (en)
TW (1) TWI266770B (en)
WO (1) WO2006038387A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5548416B2 (en) 2008-09-29 2014-07-16 富士フイルム株式会社 Positive photosensitive composition and pattern forming method using the same
JP6613615B2 (en) * 2015-05-19 2019-12-04 信越化学工業株式会社 Polymer compound and monomer, resist material and pattern forming method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6806026B2 (en) * 2002-05-31 2004-10-19 International Business Machines Corporation Photoresist composition
JP2004085900A (en) * 2002-08-27 2004-03-18 Fuji Photo Film Co Ltd Positive resist composition
JP2004138790A (en) * 2002-10-17 2004-05-13 Fuji Photo Film Co Ltd Positive resist composition
JP3900135B2 (en) * 2002-10-29 2007-04-04 Ｊｓｒ株式会社 Radiation sensitive resin composition
JP2004220009A (en) * 2002-12-28 2004-08-05 Jsr Corp Radiation sensitive resin composition
JP2004317575A (en) * 2003-04-11 2004-11-11 Tokyo Ohka Kogyo Co Ltd Method for producing hydroxyacid compound, negative resist material and method for forming wiring

Also Published As

Publication number Publication date
JP2006104353A (en) 2006-04-20
WO2006038387A1 (en) 2006-04-13
TWI266770B (en) 2006-11-21

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