Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/26—Bombardment with radiation
  • H01L21/263—Bombardment with radiation with high-energy radiation
  • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
  • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
  • H10D62/213—Channel regions of field-effect devices
  • H10D62/221—Channel regions of field-effect devices of FETs
  • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
  • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 

Landscapes

• Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• High Energy & Nuclear Physics (AREA)
• General Physics & Mathematics (AREA)
• Toxicology (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Health & Medical Sciences (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Thin Film Transistor (AREA)
• Insulated Gate Type Field-Effect Transistor (AREA)
• Semiconductor Memories (AREA)

Applications Claiming Priority (1)

Publications (2)

Family

ID=36202748

Family Applications (1)

Country Status (2)

Families Citing this family (1)

Family Cites Families (7)

• 2004
  • 2004-10-20 WO PCT/JP2004/015532 patent/WO2006043323A1/ja not_active Ceased
  • 2004-10-26 TW TW093132377A patent/TWI260092B/zh not_active IP Right Cessation

Also Published As

Similar Documents

Legal Events