TW200609318A - Composition for chemical-mechanical polishing (cmp) - Google Patents

Composition for chemical-mechanical polishing (cmp)

Info

Publication number
TW200609318A
TW200609318A TW094112721A TW94112721A TW200609318A TW 200609318 A TW200609318 A TW 200609318A TW 094112721 A TW094112721 A TW 094112721A TW 94112721 A TW94112721 A TW 94112721A TW 200609318 A TW200609318 A TW 200609318A
Authority
TW
Taiwan
Prior art keywords
composition
cmp
chemical
mechanical polishing
particles
Prior art date
Application number
TW094112721A
Other languages
English (en)
Chinese (zh)
Inventor
Gerhard Auer
Frank Hipler
Gerfried Zwicker
Original Assignee
Kerr Mcgee Pigments Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kerr Mcgee Pigments Gmbh filed Critical Kerr Mcgee Pigments Gmbh
Publication of TW200609318A publication Critical patent/TW200609318A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW094112721A 2004-04-22 2005-04-21 Composition for chemical-mechanical polishing (cmp) TW200609318A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE200410020230 DE102004020230A1 (de) 2004-04-22 2004-04-22 Zusammesetzung für das Chemisch-Mechanische Polieren (CMP)

Publications (1)

Publication Number Publication Date
TW200609318A true TW200609318A (en) 2006-03-16

Family

ID=34963660

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094112721A TW200609318A (en) 2004-04-22 2005-04-21 Composition for chemical-mechanical polishing (cmp)

Country Status (3)

Country Link
DE (1) DE102004020230A1 (de)
TW (1) TW200609318A (de)
WO (1) WO2005104205A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2208767A3 (de) 2009-01-12 2010-08-18 crenox GmbH Verfahren zum Polieren mit Hilfe titanhaltiger Poliermittel

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177026B1 (en) * 1998-05-26 2001-01-23 Cabot Microelectronics Corporation CMP slurry containing a solid catalyst
KR100447552B1 (ko) * 1999-03-18 2004-09-08 가부시끼가이샤 도시바 수계 분산체 및 반도체 장치의 제조에 사용하는 화학 기계연마용 수계 분산체 및 반도체 장치의 제조 방법 및 매립배선의 형성 방법
US6652611B1 (en) * 2000-08-18 2003-11-25 J. M. Huber Corporation Method for making abrasive compositions and products thereof
JP2003113370A (ja) * 2001-07-30 2003-04-18 Toshiba Corp 化学的機械的研磨用スラリー、半導体装置の製造方法、半導体装置の製造装置、及び化学的機械的研磨用スラリーの取り扱い方法
KR100432637B1 (ko) * 2001-08-07 2004-05-22 제일모직주식회사 구리배선 연마용 ｃｍｐ 슬러리
TWI231523B (en) * 2003-06-18 2005-04-21 Hon Hai Prec Ind Co Ltd Method of cleaning surface of semiconductor wafer

Also Published As

Publication number Publication date
WO2005104205A1 (de) 2005-11-03
DE102004020230A1 (de) 2005-11-24

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