TW200607024A - Ion sources and ion implanters and methods including the same - Google Patents

Ion sources and ion implanters and methods including the same

Info

Publication number
TW200607024A
TW200607024A TW094126024A TW94126024A TW200607024A TW 200607024 A TW200607024 A TW 200607024A TW 094126024 A TW094126024 A TW 094126024A TW 94126024 A TW94126024 A TW 94126024A TW 200607024 A TW200607024 A TW 200607024A
Authority
TW
Taiwan
Prior art keywords
region
arc chamber
ion
source gas
regions
Prior art date
Application number
TW094126024A
Other languages
English (en)
Inventor
Yong-Kwon Kim
Jae-Chul Lee
Sung-Ho Kang
Sang-Chul Lee
Ui-Yong Jeoung
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200607024A publication Critical patent/TW200607024A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/3233—Discharge generated by other radiation using charged particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H01J2237/082—Electron beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
TW094126024A 2004-08-04 2005-08-01 Ion sources and ion implanters and methods including the same TW200607024A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040061268A KR100599037B1 (ko) 2004-08-04 2004-08-04 이온 소스 및 이를 갖는 이온 주입 장치

Publications (1)

Publication Number Publication Date
TW200607024A true TW200607024A (en) 2006-02-16

Family

ID=36703700

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094126024A TW200607024A (en) 2004-08-04 2005-08-01 Ion sources and ion implanters and methods including the same

Country Status (4)

Country Link
US (1) US20060030134A1 (zh)
KR (1) KR100599037B1 (zh)
CN (1) CN1758409A (zh)
TW (1) TW200607024A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI562184B (en) * 2014-07-02 2016-12-11 Varian Semiconductor Equipment Apparatus for temperature control of ion source
TWI739820B (zh) * 2016-04-04 2021-09-21 美商艾克塞利斯科技公司 改良式離子源斥拒極罩及具有改良式離子源斥拒極罩之離子源

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EA030379B1 (ru) 2008-08-04 2018-07-31 Эй-Джи-Си Флет Гласс Норт Эмерике, Инк. Способ нанесения тонкопленочных покрытий с использованием плазменно-химического осаждения из газовой фазы (варианты)
CN101685753B (zh) * 2008-09-28 2011-02-09 和舰科技(苏州)有限公司 具有气体缓冲均匀功能的离子源
FR2939173B1 (fr) * 2008-11-28 2010-12-17 Ecole Polytech Propulseur a plasma electronegatif a injection optimisee.
BR112017011612A2 (pt) 2014-12-05 2018-01-16 Agc Glass Europe, S.A fonte de plasma de cátodo oco
JP6508746B2 (ja) 2014-12-05 2019-05-08 エージーシー フラット グラス ノース アメリカ，インコーポレイテッドＡｇｃ Ｆｌａｔ Ｇｌａｓｓ Ｎｏｒｔｈ Ａｍｅｒｉｃａ，Ｉｎｃ． マクロ粒子低減コーティングを利用したプラズマ源ならびにマクロ粒子低減コーティングを用いたプラズマ源を薄膜コーティングおよび表面改質に使用する方法
JP6959914B2 (ja) 2015-11-05 2021-11-05 アクセリス テクノロジーズ， インコーポレイテッド イオン注入システム用の、リップを有するイオン源ライナー
US9721764B2 (en) 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Method of producing plasma by multiple-phase alternating or pulsed electrical current
US9721765B2 (en) 2015-11-16 2017-08-01 Agc Flat Glass North America, Inc. Plasma device driven by multiple-phase alternating or pulsed electrical current
US10573499B2 (en) 2015-12-18 2020-02-25 Agc Flat Glass North America, Inc. Method of extracting and accelerating ions
US10242846B2 (en) 2015-12-18 2019-03-26 Agc Flat Glass North America, Inc. Hollow cathode ion source
SG11201805171YA (en) * 2015-12-18 2018-07-30 Agc Flat Glass Na Inc Hollow cathode ion source and method of extracting and accelerating ions
JP6802277B2 (ja) 2016-01-19 2020-12-16 アクセリス テクノロジーズ， インコーポレイテッド 改善されたイオン源のカソードシールド
CN106373846B (zh) * 2016-11-16 2019-01-18 上海华力微电子有限公司 一种晶圆高能离子注入机金属污染改善方法
US10892136B2 (en) * 2018-08-13 2021-01-12 Varian Semiconductor Equipment Associates, Inc. Ion source thermal gas bushing
US11607323B2 (en) 2018-10-15 2023-03-21 Howmedica Osteonics Corp. Patellofemoral trial extractor
US10748738B1 (en) * 2019-03-18 2020-08-18 Applied Materials, Inc. Ion source with tubular cathode

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US5262652A (en) * 1991-05-14 1993-11-16 Applied Materials, Inc. Ion implantation apparatus having increased source lifetime
US5466942A (en) * 1991-07-04 1995-11-14 Kabushiki Kaisha Toshiba Charged beam irradiating apparatus having a cleaning means and a method of cleaning a charged beam irradiating apparatus
JPH06223756A (ja) * 1993-01-26 1994-08-12 Japan Steel Works Ltd:The イオン源
JPH07272671A (ja) * 1994-03-29 1995-10-20 Ulvac Japan Ltd ガス分析装置及びガス分析方法
US5497006A (en) * 1994-11-15 1996-03-05 Eaton Corporation Ion generating source for use in an ion implanter
US6022258A (en) * 1996-03-27 2000-02-08 Thermoceramix, Llc ARC chamber for an ion implantation system
US5892232A (en) * 1996-10-25 1999-04-06 Mosel Vitelic Inc. Arc chamber for ion implanter
GB9623327D0 (en) * 1996-11-08 1997-01-08 British Gas Plc An electric power generation system
KR19990008723A (ko) * 1997-07-03 1999-02-05 윤종용 이온주입 설비용 이온 발생장치의 구조
US6184532B1 (en) * 1997-12-01 2001-02-06 Ebara Corporation Ion source
JP3494889B2 (ja) * 1998-06-03 2004-02-09 セイコーインスツルメンツ株式会社 集束イオンビーム加工装置
US6300636B1 (en) * 1999-10-02 2001-10-09 Taiwan Semiconductor Manufacturing Company, Ltd. Ion source head
JP2002008582A (ja) 2000-06-23 2002-01-11 Sony Corp イオン注入装置
US6627901B2 (en) * 2001-01-04 2003-09-30 Nec Electronics, Inc. Apparatus and method for distribution of dopant gases or vapors in an arc chamber for use in an ionization source
KR100413145B1 (ko) * 2001-01-11 2003-12-31 삼성전자주식회사 가스 인젝터 및 이를 갖는 식각 장치
KR20030085087A (ko) * 2001-04-03 2003-11-01 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 이온 공급원 필라멘트 및 방법
KR20030097284A (ko) * 2002-06-20 2003-12-31 삼성전자주식회사 이온 주입 설비의 이온 소스
US6894296B2 (en) * 2002-07-30 2005-05-17 Taiwan Semiconductor Manufacturing Co., Ltd Multi-inlet PFS arc chamber for hi-current implanter
KR100485387B1 (ko) * 2002-11-26 2005-04-27 삼성전자주식회사 이온 주입 장치의 모니터링 방법 및 이를 수행하기 위한섀도우 지그를 갖는 이온 주입 장치
KR20040046571A (ko) * 2002-11-27 2004-06-05 주식회사 피앤아이 이온빔을 이용한 재료의 표면 처리 장치

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI562184B (en) * 2014-07-02 2016-12-11 Varian Semiconductor Equipment Apparatus for temperature control of ion source
TWI739820B (zh) * 2016-04-04 2021-09-21 美商艾克塞利斯科技公司 改良式離子源斥拒極罩及具有改良式離子源斥拒極罩之離子源

Also Published As

Publication number Publication date
KR20060012684A (ko) 2006-02-09
US20060030134A1 (en) 2006-02-09
KR100599037B1 (ko) 2006-07-12
CN1758409A (zh) 2006-04-12

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