TW200605413A - Group Ⅲ nitride semiconductor light emitting device - Google Patents

Group Ⅲ nitride semiconductor light emitting device

Info

Publication number
TW200605413A
TW200605413A TW094119935A TW94119935A TW200605413A TW 200605413 A TW200605413 A TW 200605413A TW 094119935 A TW094119935 A TW 094119935A TW 94119935 A TW94119935 A TW 94119935A TW 200605413 A TW200605413 A TW 200605413A
Authority
TW
Taiwan
Prior art keywords
nitride semiconductor
group iii
iii nitride
light emitting
emitting device
Prior art date
Application number
TW094119935A
Other languages
English (en)
Other versions
TWI269466B (en
Inventor
Takaki Yasuda
Akira Bandoh
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200605413A publication Critical patent/TW200605413A/zh
Application granted granted Critical
Publication of TWI269466B publication Critical patent/TWI269466B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
TW094119935A 2004-06-18 2005-06-16 Group III nitride semiconductor light emitting device TWI269466B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004181561 2004-06-18

Publications (2)

Publication Number Publication Date
TW200605413A true TW200605413A (en) 2006-02-01
TWI269466B TWI269466B (en) 2006-12-21

Family

ID=38291558

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094119935A TWI269466B (en) 2004-06-18 2005-06-16 Group III nitride semiconductor light emitting device

Country Status (3)

Country Link
US (1) US20070241352A1 (zh)
TW (1) TWI269466B (zh)
WO (1) WO2005124879A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110473943A (zh) * 2018-05-11 2019-11-19 松下知识产权经营株式会社 发光二极管元件、以及发光二极管元件的制造方法

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JP4939014B2 (ja) * 2005-08-30 2012-05-23 国立大学法人徳島大学 Ｉｉｉ族窒化物半導体発光素子およびｉｉｉ族窒化物半導体発光素子の製造方法
WO2007060931A1 (ja) * 2005-11-22 2007-05-31 Rohm Co., Ltd. 窒化物半導体素子
KR100784065B1 (ko) * 2006-09-18 2007-12-10 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR101495381B1 (ko) * 2007-11-21 2015-02-24 미쓰비시 가가꾸 가부시키가이샤 질화물 반도체의 결정 성장 방법
KR101020961B1 (ko) * 2008-05-02 2011-03-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101154596B1 (ko) * 2009-05-21 2012-06-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
CN102034912B (zh) * 2009-12-29 2015-03-25 比亚迪股份有限公司 发光二极管外延片、其制作方法及芯片的制作方法
KR101007136B1 (ko) * 2010-02-18 2011-01-10 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
CN102244168A (zh) * 2010-05-14 2011-11-16 展晶科技(深圳)有限公司 发光二极管及其制造方法
US9209359B2 (en) * 2010-11-02 2015-12-08 Koninklijke Philips N.V. Light emitting device with improved extraction efficiency
KR101778161B1 (ko) * 2011-01-26 2017-09-13 엘지이노텍 주식회사 발광소자
CN102916098B (zh) * 2011-08-01 2016-01-06 展晶科技(深圳)有限公司 发光二极管晶粒及其制作方法
CN103311391B (zh) * 2012-03-06 2016-07-20 展晶科技(深圳)有限公司 发光二极管晶粒及其制作方法
CN104779330B (zh) * 2015-04-29 2018-03-27 安徽三安光电有限公司 一种发光二极管结构及其制备方法
KR102464030B1 (ko) * 2015-12-29 2022-11-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

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JP2890390B2 (ja) * 1994-07-06 1999-05-10 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP3333330B2 (ja) * 1994-09-30 2002-10-15 株式会社東芝 半導体発光素子及びその製造方法
US5777350A (en) * 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
JP3822318B2 (ja) * 1997-07-17 2006-09-20 株式会社東芝 半導体発光素子及びその製造方法
KR100651145B1 (ko) * 1997-08-29 2006-11-28 크리 인코포레이티드 표준 응용에서 고신뢰성을 위한 강한 3족 질화물 발광다이오드
US6091085A (en) * 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
JP3786544B2 (ja) * 1999-06-10 2006-06-14 パイオニア株式会社 窒化物半導体素子の製造方法及びかかる方法により製造された素子
US6531719B2 (en) * 1999-09-29 2003-03-11 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device
JP2001168386A (ja) * 1999-09-29 2001-06-22 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
JP3556916B2 (ja) * 2000-09-18 2004-08-25 三菱電線工業株式会社 半導体基材の製造方法
JP4644942B2 (ja) * 2001-01-18 2011-03-09 ソニー株式会社 結晶膜、結晶基板および半導体装置の製造方法
KR100632760B1 (ko) * 2001-03-21 2006-10-11 미츠비시 덴센 고교 가부시키가이샤 반도체 발광 소자
JP3595277B2 (ja) * 2001-03-21 2004-12-02 三菱電線工業株式会社 ＧａＮ系半導体発光ダイオード
JP4233268B2 (ja) * 2002-04-23 2009-03-04 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
JP4438277B2 (ja) * 2002-09-27 2010-03-24 日亜化学工業株式会社 窒化物半導体結晶の成長方法及びそれを用いた素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110473943A (zh) * 2018-05-11 2019-11-19 松下知识产权经营株式会社 发光二极管元件、以及发光二极管元件的制造方法

Also Published As

Publication number Publication date
TWI269466B (en) 2006-12-21
US20070241352A1 (en) 2007-10-18
WO2005124879A1 (en) 2005-12-29

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