TW200604370A - Plasma enhanced chemical vapor deposition system for forming carbon nanotubes - Google Patents

Plasma enhanced chemical vapor deposition system for forming carbon nanotubes

Info

Publication number
TW200604370A
TW200604370A TW094123432A TW94123432A TW200604370A TW 200604370 A TW200604370 A TW 200604370A TW 094123432 A TW094123432 A TW 094123432A TW 94123432 A TW94123432 A TW 94123432A TW 200604370 A TW200604370 A TW 200604370A
Authority
TW
Taiwan
Prior art keywords
vapor deposition
chemical vapor
carbon nanotubes
plasma enhanced
enhanced chemical
Prior art date
Application number
TW094123432A
Other languages
English (en)
Inventor
Sung-Gu Kang
Woo-Kyung Bae
Original Assignee
Cdream Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cdream Corp filed Critical Cdream Corp
Publication of TW200604370A publication Critical patent/TW200604370A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/162—Preparation characterised by catalysts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Carbon And Carbon Compounds (AREA)
TW094123432A 2004-07-12 2005-07-11 Plasma enhanced chemical vapor deposition system for forming carbon nanotubes TW200604370A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/889,807 US20060008594A1 (en) 2004-07-12 2004-07-12 Plasma enhanced chemical vapor deposition system for forming carbon nanotubes

Publications (1)

Publication Number Publication Date
TW200604370A true TW200604370A (en) 2006-02-01

Family

ID=35541690

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094123432A TW200604370A (en) 2004-07-12 2005-07-11 Plasma enhanced chemical vapor deposition system for forming carbon nanotubes

Country Status (5)

Country Link
US (1) US20060008594A1 (zh)
EP (1) EP1781836A4 (zh)
JP (1) JP2008514531A (zh)
TW (1) TW200604370A (zh)
WO (1) WO2006017340A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI480405B (zh) * 2012-11-28 2015-04-11 Beijing Nmc Co Ltd Physical vapor deposition device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4781662B2 (ja) * 2004-11-17 2011-09-28 シャープ株式会社 カーボンナノチューブの作製方法およびカーボンナノチューブの作製装置
KR100806129B1 (ko) * 2006-08-02 2008-02-22 삼성전자주식회사 탄소 나노 튜브의 형성 방법
US7794797B2 (en) * 2007-01-30 2010-09-14 Cfd Research Corporation Synthesis of carbon nanotubes by selectively heating catalyst
JP5995108B2 (ja) * 2011-08-24 2016-09-21 日本ゼオン株式会社 カーボンナノチューブ配向集合体の製造装置及び製造方法
JP6131095B2 (ja) * 2012-06-19 2017-05-17 株式会社アマダホールディングス 金型位置検出装置、曲げ加工装置、金型、被装着装置に対する装着部材の位置検出方法
US10246060B2 (en) * 2015-08-20 2019-04-02 Fca Us Llc Integrated vacuum for motor vehicle
CN108504096B (zh) * 2018-04-19 2020-02-18 天津大学 一种碳纳米管/聚合物复合材料的制备方法
CN109259045A (zh) * 2018-10-19 2019-01-25 恩智浦美国有限公司 具有可重新定位电极的解冻设备
JP7406965B2 (ja) * 2019-01-09 2023-12-28 東京エレクトロン株式会社 プラズマ処理装置
US11955314B2 (en) * 2019-01-09 2024-04-09 Tokyo Electron Limited Plasma processing apparatus
KR20230137037A (ko) 2022-03-21 2023-10-04 주식회사 씨에이티빔텍 탄소나노튜브 제조 장치 및 탄소나노튜브 제조 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3257328B2 (ja) * 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
JP3119172B2 (ja) * 1995-09-13 2000-12-18 日新電機株式会社 プラズマｃｖｄ法及び装置
US7004107B1 (en) * 1997-12-01 2006-02-28 Applied Materials Inc. Method and apparatus for monitoring and adjusting chamber impedance
JP2000277003A (ja) * 1999-03-23 2000-10-06 Futaba Corp 電子放出源の製造方法及び電子放出源
KR100360470B1 (ko) * 2000-03-15 2002-11-09 삼성에스디아이 주식회사 저압-ｄｃ-열화학증착법을 이용한 탄소나노튜브 수직배향증착 방법
CN1325372C (zh) * 2001-07-27 2007-07-11 萨里大学 碳纳米管的制备
KR20030028296A (ko) * 2001-09-28 2003-04-08 학교법인 한양학원 플라즈마 화학기상증착 장치 및 이를 이용한 탄소나노튜브제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI480405B (zh) * 2012-11-28 2015-04-11 Beijing Nmc Co Ltd Physical vapor deposition device

Also Published As

Publication number Publication date
EP1781836A4 (en) 2009-03-18
US20060008594A1 (en) 2006-01-12
WO2006017340A3 (en) 2007-12-13
WO2006017340A2 (en) 2006-02-16
JP2008514531A (ja) 2008-05-08
EP1781836A2 (en) 2007-05-09

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