TW200603442A - Nitride semiconductor light emitting element - Google Patents
Nitride semiconductor light emitting elementInfo
- Publication number
- TW200603442A TW200603442A TW094113619A TW94113619A TW200603442A TW 200603442 A TW200603442 A TW 200603442A TW 094113619 A TW094113619 A TW 094113619A TW 94113619 A TW94113619 A TW 94113619A TW 200603442 A TW200603442 A TW 200603442A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- type
- concentration
- light emitting
- dopanted
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
Abstract
A GaN based light emitting element using Mg as a p-type dopant in a P-type layer is proposed. A P-type clad layer 31 comprising A1xGa1-xN (0 ≤ ≤ 1) is formed in the lowest part of the P-type layer. A heavily Mg-dopanted layer 33 comprising A1yGa1-xN (0 ≤ y ≤ 1) is provided on the clad layer with at least one hetero interface interposed therebetween, and a P-type contact layer 34 comprising A1zGa1-zN(y < z ≤ 1) is provided immediatley thereabove. The P-type contact layer has a layer thickness of 10nm or less, and a Mg concentration a of 5x1019cm-3 ≤ a. The heavily Mg dopanted layer has a layer thickness of 5nm - 20 nm and a Mg concentration b of 2x1019cm-3 < b. The layer interposed between the heavily Mg dopanted layer and the light emitting layer has a Mg concentration c of 1x1019cm>-3 ≤c < b. The p-type layer excluding the P-type contact layer has an average value of Mg concentration of less than 5x1019cm-3. By reducing the total amount of Mg to be added to the P-type layer while maintaining a high concentration of the Mg concentration in the surface layer of the P-type contact layer, the light absorption caused by Mg can be much reduced even with a suppressed operation voltage rise.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004134704 | 2004-04-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200603442A true TW200603442A (en) | 2006-01-16 |
TWI295859B TWI295859B (en) | 2008-04-11 |
Family
ID=35241951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94113619A TWI295859B (en) | 2004-04-28 | 2005-04-28 | Nitride semiconductor lihgt emitting element |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5082444B2 (en) |
TW (1) | TWI295859B (en) |
WO (1) | WO2005106979A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI463553B (en) * | 2008-05-01 | 2014-12-01 | Sumitomo Electric Industries | Group iii nitride crystal and method for surface treatment thereof, group iii nitride stack and manufacturing method thereof, and group iii nitride semiconductor device and manufacturing method thereof |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009021424A (en) * | 2007-07-12 | 2009-01-29 | Opnext Japan Inc | Nitride semiconductor light emitting element, and manufacturing method thereof |
WO2015029578A1 (en) * | 2013-08-27 | 2015-03-05 | 富士電機株式会社 | Semiconductor device manufacturing method and semiconductor device |
JP6229609B2 (en) * | 2014-07-18 | 2017-11-15 | 豊田合成株式会社 | Group III nitride semiconductor light emitting device manufacturing method |
JP2017050439A (en) * | 2015-09-03 | 2017-03-09 | 豊田合成株式会社 | Uv light-emitting device and method for manufacturing the same |
JP6902255B2 (en) * | 2016-02-01 | 2021-07-14 | 国立研究開発法人理化学研究所 | Ultraviolet light emitting element |
JP6438542B1 (en) | 2017-07-27 | 2018-12-12 | 日機装株式会社 | Semiconductor light emitting device |
CN114038958B (en) * | 2021-08-05 | 2023-03-24 | 重庆康佳光电技术研究院有限公司 | Light-emitting chip epitaxial wafer, manufacturing method thereof and light-emitting chip |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2666237B2 (en) * | 1994-09-20 | 1997-10-22 | 豊田合成株式会社 | Group III nitride semiconductor light emitting device |
JP3250438B2 (en) * | 1995-03-29 | 2002-01-28 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
JP3543498B2 (en) * | 1996-06-28 | 2004-07-14 | 豊田合成株式会社 | Group III nitride semiconductor light emitting device |
JP3374737B2 (en) * | 1997-01-09 | 2003-02-10 | 日亜化学工業株式会社 | Nitride semiconductor device |
JP3314666B2 (en) * | 1997-06-09 | 2002-08-12 | 日亜化学工業株式会社 | Nitride semiconductor device |
JP2000286451A (en) * | 1998-11-17 | 2000-10-13 | Nichia Chem Ind Ltd | Nitride semiconductor device |
JP4149054B2 (en) * | 1998-11-27 | 2008-09-10 | シャープ株式会社 | Semiconductor device |
JP3551101B2 (en) * | 1999-03-29 | 2004-08-04 | 日亜化学工業株式会社 | Nitride semiconductor device |
JP3614070B2 (en) * | 2000-01-17 | 2005-01-26 | 日亜化学工業株式会社 | Nitride semiconductor light emitting diode |
JP3956941B2 (en) * | 2001-06-15 | 2007-08-08 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device and light emitting device using the same |
JP2004006970A (en) * | 2003-07-31 | 2004-01-08 | Toyoda Gosei Co Ltd | Group iii nitride semiconductor light emitting element |
-
2005
- 2005-04-26 WO PCT/JP2005/008389 patent/WO2005106979A1/en active Application Filing
- 2005-04-26 JP JP2006512867A patent/JP5082444B2/en active Active
- 2005-04-28 TW TW94113619A patent/TWI295859B/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI463553B (en) * | 2008-05-01 | 2014-12-01 | Sumitomo Electric Industries | Group iii nitride crystal and method for surface treatment thereof, group iii nitride stack and manufacturing method thereof, and group iii nitride semiconductor device and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
JPWO2005106979A1 (en) | 2008-03-21 |
JP5082444B2 (en) | 2012-11-28 |
TWI295859B (en) | 2008-04-11 |
WO2005106979A1 (en) | 2005-11-10 |
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