TW200603338A - Polymers of polycyclic olefins having a polyhedral oligosilsesquioxane pendant group and uses thereof - Google Patents

Polymers of polycyclic olefins having a polyhedral oligosilsesquioxane pendant group and uses thereof

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Publication number
TW200603338A
TW200603338A TW094104192A TW94104192A TW200603338A TW 200603338 A TW200603338 A TW 200603338A TW 094104192 A TW094104192 A TW 094104192A TW 94104192 A TW94104192 A TW 94104192A TW 200603338 A TW200603338 A TW 200603338A
Authority
TW
Taiwan
Prior art keywords
polymers
pendant group
polyhedral oligosilsesquioxane
norbornene
addition
Prior art date
Application number
TW094104192A
Other languages
English (en)
Other versions
TWI375296B (en
Inventor
Larry F Rhodes
Larry Seger
Ramakrishna Ravikiran
Edmund Elce
Robert Shick
John-Henry Lipian
Original Assignee
Promerus Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Promerus Llc filed Critical Promerus Llc
Publication of TW200603338A publication Critical patent/TW200603338A/zh
Application granted granted Critical
Publication of TWI375296B publication Critical patent/TWI375296B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02134—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F230/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
    • C08F230/04—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
    • C08F230/08—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • H01L21/3124—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds layers comprising hydrogen silsesquioxane
TW094104192A 2004-02-13 2005-02-14 Polymers of polycyclic olefins having a polyhedral oligosilsesquioxane pendant group and uses thereof TWI375296B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54462304P 2004-02-13 2004-02-13
US11/054,963 US20050192409A1 (en) 2004-02-13 2005-02-10 Polymers of polycyclic olefins having a polyhedral oligosilsesquioxane pendant group and uses thereof

Publications (2)

Publication Number Publication Date
TW200603338A true TW200603338A (en) 2006-01-16
TWI375296B TWI375296B (en) 2012-10-21

Family

ID=34889829

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094104192A TWI375296B (en) 2004-02-13 2005-02-14 Polymers of polycyclic olefins having a polyhedral oligosilsesquioxane pendant group and uses thereof

Country Status (5)

Country Link
US (1) US20050192409A1 (zh)
EP (1) EP1730773B1 (zh)
DE (1) DE602005009935D1 (zh)
TW (1) TWI375296B (zh)
WO (1) WO2005081306A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104105726A (zh) * 2012-02-15 2014-10-15 默克专利股份有限公司 用于有机电子器件的平坦化层
TWI577702B (zh) * 2010-09-02 2017-04-11 馬克專利公司 用於電子裝置之夾層
TWI618723B (zh) * 2010-09-02 2018-03-21 馬克專利公司 用於有機電子裝置之閘極絕緣層
TWI701510B (zh) * 2015-09-30 2020-08-11 日商富士軟片股份有限公司 抗蝕劑組成物以及使用其的抗蝕劑膜、圖案形成方法及電子裝置的製造方法

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JP2008078557A (ja) * 2006-09-25 2008-04-03 Fujifilm Corp 組成物、膜、およびその製造方法
WO2008099904A1 (en) * 2007-02-09 2008-08-21 Nippon Shokubai Co., Ltd. Silane compound, production method thereof, and resin composition containing silane compound
US8215496B2 (en) * 2008-01-28 2012-07-10 Promerus Llc Polynorbornene pervaporation membrane films, preparation and use thereof
US8263709B2 (en) * 2009-11-16 2012-09-11 University Of Massachusetts Crystal nucleating agents, crystalline polymer composition, methods of manufacture thereof, and articles thereof
US8541523B2 (en) * 2010-04-05 2013-09-24 Promerus, Llc Norbornene-type polymers, compositions thereof and lithographic process using such compositions
WO2013138494A1 (en) * 2012-03-13 2013-09-19 California Institute Of Technology Periodic nanostructures from self assembled wedge-type block-copolymers
US10532020B2 (en) * 2012-08-22 2020-01-14 Revlon Consumer Products Corporation Nail coatings having enhanced adhesion
WO2014044359A1 (en) 2012-09-21 2014-03-27 Merck Patent Gmbh Organic semiconductor formulations
TWI712860B (zh) * 2015-02-26 2020-12-11 日商富士軟片股份有限公司 圖案形成方法、電子元件的製造方法及有機溶劑顯影用感光化射線性或感放射線性樹脂組成物
US10608280B2 (en) 2015-03-09 2020-03-31 California Institute Of Technology Brush block copolymer electrolytes and electrocatalyst compositions
CN110248725B (zh) 2016-12-22 2022-08-02 伊鲁米那股份有限公司 包括树脂膜和图案化的聚合物层的阵列
US11053356B2 (en) 2017-03-07 2021-07-06 California Institute Of Technology Control of polymer architectures by living ring-opening metathesis copolymerization
TWI683852B (zh) 2017-12-29 2020-02-01 財團法人工業技術研究院 組成物、包含其之絕緣材料及其製法

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US5912313A (en) * 1995-11-22 1999-06-15 The B. F. Goodrich Company Addition polymers of polycycloolefins containing silyl functional groups
WO1998020394A1 (en) * 1996-11-04 1998-05-14 The B.F. Goodrich Company Photodefinable dielectric compositions
EP0963603B1 (en) * 1997-01-21 2003-12-03 Georgia Tech Research Corporation Fabrication of a semiconductor device with air gaps for ultra-low capacitance interconnections
US5953627A (en) * 1997-11-06 1999-09-14 International Business Machines Corporation Process for manufacture of integrated circuit device
ID26627A (id) * 1998-02-23 2001-01-25 B F Goodrich Company Cs Komposisi-komposisi penahan polisiklik dengan tahanan etsa yang ditingkatkan
US6911518B2 (en) * 1999-12-23 2005-06-28 Hybrid Plastics, Llc Polyhedral oligomeric -silsesquioxanes, -silicates and -siloxanes bearing ring-strained olefinic functionalities
DE60218342T2 (de) * 2001-12-12 2007-10-31 Sumitomo Bakelite Co., Ltd. Polymerzusammensetzungen und deren verwendungen
TW200413417A (en) * 2002-10-31 2004-08-01 Arch Spec Chem Inc Novel copolymer, photoresist compositions thereof and deep UV bilayer system thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI577702B (zh) * 2010-09-02 2017-04-11 馬克專利公司 用於電子裝置之夾層
TWI618723B (zh) * 2010-09-02 2018-03-21 馬克專利公司 用於有機電子裝置之閘極絕緣層
CN104105726A (zh) * 2012-02-15 2014-10-15 默克专利股份有限公司 用于有机电子器件的平坦化层
CN104105726B (zh) * 2012-02-15 2017-05-31 默克专利股份有限公司 用于有机电子器件的平坦化层
TWI594471B (zh) * 2012-02-15 2017-08-01 馬克專利公司 用於有機電子裝置之平坦化層
TWI701510B (zh) * 2015-09-30 2020-08-11 日商富士軟片股份有限公司 抗蝕劑組成物以及使用其的抗蝕劑膜、圖案形成方法及電子裝置的製造方法

Also Published As

Publication number Publication date
TWI375296B (en) 2012-10-21
US20050192409A1 (en) 2005-09-01
DE602005009935D1 (de) 2008-11-06
EP1730773A1 (en) 2006-12-13
EP1730773B1 (en) 2008-09-24
WO2005081306A1 (en) 2005-09-01

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