TW200536637A - Heat dissipating device and method of making same - Google Patents

Heat dissipating device and method of making same Download PDF

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Publication number
TW200536637A
TW200536637A TW093113626A TW93113626A TW200536637A TW 200536637 A TW200536637 A TW 200536637A TW 093113626 A TW093113626 A TW 093113626A TW 93113626 A TW93113626 A TW 93113626A TW 200536637 A TW200536637 A TW 200536637A
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Taiwan
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item
patent application
heat dissipation
scope
heat sink
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TW093113626A
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Chinese (zh)
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TWI250056B (en
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Charles Leu
Tai-Cherng Yu
Ga-Lane Chen
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Hon Hai Prec Ind Co Ltd
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Priority to TW093113626A priority Critical patent/TWI250056B/en
Priority to US11/044,839 priority patent/US20050252637A1/en
Publication of TW200536637A publication Critical patent/TW200536637A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736Metallic materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Powder Metallurgy (AREA)

Abstract

A heat dissipating device includes a base and a number of heat sinks formed thereon. The base and the heat sinks are both made from metal nano-particles. The base is integrally formed with the heat sinks by sintering. A method of making the same heat dissipating device is provided accordingly.

Description

200536637200536637

【發明所屬之技術領域】 本發明係關於一種散熱裝置及其製造方法 【先前技術】 / 現階段電腦CPU現有的散熱方法主要係使用空氣冷 式’其中具有散熱轉片的散熱器使用最為廣泛。其主7要1 具有良好導熱性能的金屬製成,利用其導熱性將熱量 帶離並傳導至週邊空氣中。並且’散熱器通常搭配有風 扇’由其導引空氣流動以提高散熱效率。 曰最初,散熱器多以鋁或鋁合金製成。但隨著CPU產生 熱篁愈來愈多,單純使用鋁製的散熱器開始不敷使 是以導熱性能更好的銅來製作的散熱片應運而生。但B 、 銅的密度約為鋁的3倍(銅的密度約為8 4x 10 :广’ 為2.7X 1〇3千克/米3),亦即相同體積的銅此 叫’: 散熱片通常置於CPU上方,其重量有一亶、力3七。而 相比’價格更為昂貴且加工性較差。㈤此'為。另’銅與鋁 佳導熱性能及的重量輕、易加工等,產 ^ = 式散熱器。 座生銅ί呂谩合 铭製= =熱Π:射出成型所得之 、 门 < 紙砟a又置銅片。使用時,錮M ^rDTT上[Technical field to which the invention belongs] The present invention relates to a heat dissipation device and a manufacturing method thereof. [Previous technology] / The current heat dissipation method of a computer CPU at the present stage mainly uses an air-cooled type, among which a heat sink with a heat sink is most widely used. The main part 7 is made of a metal with good thermal conductivity, and uses its thermal conductivity to remove heat and conduct it into the surrounding air. And the 'radiator is usually equipped with a fan' to guide the air flow to improve heat dissipation efficiency. Initially, most radiators were made of aluminum or aluminum alloy. However, as the CPU generates more and more heat, the simple use of aluminum heat sinks has become inadequate, and heat sinks made of copper with better thermal conductivity have come into being. However, the density of B and copper is about 3 times that of aluminum (the density of copper is about 8 4x 10: guang 'is 2.7X 103 kg / m 3), that is, the same volume of copper is called': heat sink is usually placed Above the CPU, it has a weight and a force of 37. In contrast, it is more expensive and has poor processability. ㈤This' is. In addition, copper and aluminum have good thermal conductivity and light weight, and are easy to process. They produce ^ = type radiators. Block of copper 谩 LV 谩 合 Inscription = = Hot Π: The door < paper 砟 a obtained by injection molding is set with copper sheet. When used, rM ^ rDTT

亚將其產生的熱量快速傳導至散熱鰭μ,再至:J妾η 中。其中,該銅片與鋁製散熱鰭片的 工氣 通過中間物進行間接式連接,如採用;::式 黏接物或者錫_ ; 2)直接連接,如採用/ 月旨等 硬焊、擴散接合、滾?、雷射焊接、塑性變形等Asia quickly conducts the heat generated by it to the heat dissipation fin μ, and then to: J 妾 η. Among them, the working gas of the copper sheet and the aluminum heat sink fin is indirectly connected through the intermediate, such as ::: Adhesive or tin_; 2) Direct connection, such as hard soldering and diffusion, such as / month purpose Joining, rolling, laser welding, plastic deformation, etc.

第4頁 200536637 五、發明說明(2) 兩者之接合。惟,這些傳統加工方式工藝繁瑣,且易使得 銅片與I呂製散熱鰭片之間的熱阻增大。另,射出成型所得 之散熱鰭片表面光滑,散熱面積有限’從而導致散熱效率 降低。 有鑑於此’提供一種基底與散熱鰭片之間之接觸熱阻 低且散熱效率高的散熱裝置及其製造方法實為必要。 【發明内容】 ' 為f決先前技術之散熱裝置之基底與散熱鰭片之間接 觸熱阻面、散熱效率底之問題,本發明之目的在於提供一 種基底與散熱鰭片之間之接觸熱阻低且散熱效率高的散埶 裝置。 … 本發明之另一目的在於提供上述散熱裝置之製造方 為貫現本發 置’其包括基底 底及散熱鰭片係 其中,構成 第一金屬及第二 用於提高 實現本發 設置有 為 散熱裝置之製造 提供一設有 变包括與該基底 二部位; 明之目的,本發明所提供之一種散熱裝 及位於其上之複數散熱鰭片。其中,該基 由金屬奈米粉粒經燒結一體成型而成。 。亥基底及散熱鰭片之金屬奈米粉粒分別為 金屬之奈米粉粒。該散熱裝置還可進一步 其性能之附著物,如奈米碳管。 ’ 明之另一目的,本發明所提供之一種上 方法,其包括步驟: 該散熱裝置之預定圖形的模型,其中該槿 對應的第一部位及與該散熱韓片對應^Page 4 200536637 V. Description of the invention (2) The combination of the two. However, these traditional processing methods are cumbersome and easy to increase the thermal resistance between the copper sheet and the heat sink fins made of I-Lu. In addition, the surface of the heat dissipation fin obtained by injection molding is smooth, and the heat dissipation area is limited ', which results in a decrease in heat dissipation efficiency. In view of this, it is necessary to provide a heat dissipation device with low thermal contact resistance between the substrate and the heat dissipation fin and high heat dissipation efficiency, and a manufacturing method thereof. [Summary of the Invention] In order to solve the problems of the contact thermal resistance surface and the heat dissipation efficiency between the substrate of the prior art heat sink and the heat dissipation fin, the object of the present invention is to provide a contact heat resistance between the substrate and the heat sink Dispersion device with low and high heat dissipation efficiency. … Another object of the present invention is to provide a manufacturer of the above-mentioned heat-dissipating device in order to realize the present device, which includes a base bottom and a heat-dissipating fin system, wherein the first metal and the second are used to improve the realization of the present device and are provided for heat dissipation. The manufacture of the device provides a heat-dissipating device and a plurality of heat-dissipating fins provided thereon. Among them, the base is formed by sintering and integrating the metal nano powder particles. . The metal nano particles of the base and the radiating fins are metal nano particles, respectively. The heat sink can be further attached to its performance, such as carbon nanotubes. ′ Another object of the present invention is to provide a method according to the present invention, comprising the steps of: a model of a predetermined pattern of the heat sink, wherein the first part corresponding to the hibiscus and the heat sink Korean sheet ^

第5頁 200536637 五、發明說明(3) 於該模型之第 部位及第二部位處分別灌入金屬奈米 粉粒 燒結 置用 法於 管。 將該裝有該金屬奈米粉粒之模型置於惰性氣氛中進行 以形成該散熱裝置。 其中,該製造方法可進一步包 於提高其性能之附著 該散熱裝置基底之遠 物的步驟 離該散熱 括於所得之散熱裝置設 ,如採用化學氣相沈積 鰭片之表面生長奈米碳 另,上述金屬奈米粉粒可選自 金之一種。該金屬奈米粉粒的粒徑 金、銀、銅、鋁及其合 可為1-99奈米。 置, 降低 性能 統加 提高【實 發明採用燒結方式製成散熱裝 片成為一整體,其接觸熱阻顯著 之基底及散熱鰭片均由具高導熱 ,其表面積將遠大於採用其他傳 所製得之同體型之散熱器,從而 5 0及 鰭片 造方 相對於先前技術,本 使得其基底與散熱鰭 。同時,該散熱裝置 的金屬奈米粉粒製成 工方式(如射出成型) 散熱效率。 施方式】 下面將結合附圖對本發明作進一步之詳細說明 請參閱第一圖,本發明提供之 鰭片5 2 。 散熱裝置5,其包括基底 其中,該基底50及散熱 體成型而成。 一種上述散熱裝置5的製 位於其上之複數散熱 5 2係由金屬奈米粉粒經燒結一 請參閱第二圖,本發明提供之 法6,包括以下步驟: 步驟6 0,提供一設有該散熱裝置5之預定圖形的模型Page 5 200536637 V. Description of the invention (3) The first and second parts of the model are respectively filled with metal nano-powder and sintered and placed in a tube. The mold containing the metal nano-powder was placed in an inert atmosphere to form the heat sink. Wherein, the manufacturing method can further include the step of distant objects attached to the base of the heat sink to improve its performance, and the heat sink is included in the obtained heat sink, such as the use of chemical vapor deposition of fins to grow nano carbon. The metal nano powder may be selected from gold. The metallic nano particles have a particle size of gold, silver, copper, aluminum, or a combination of 1 to 99 nanometers. In order to reduce the performance and increase the performance, the sintering method is used to make the heat dissipation fins as a whole. The substrate with significant contact thermal resistance and the heat dissipation fins have high thermal conductivity, and the surface area will be much larger than that made by other transmissions. The same type of heat sink, so 50 and fin manufacturing compared to the prior art, originally made its base and heat dissipation fins. At the same time, the metal nano-powder of the heat sink is made in a way (such as injection molding) for heat dissipation. Embodiment] The present invention will be further described in detail with reference to the accompanying drawings. Please refer to the first figure, the fin 5 2 provided by the present invention. The heat dissipation device 5 includes a base, wherein the base 50 and a heat sink are formed. A plurality of heat dissipation devices 5 2 made of the above-mentioned heat dissipation device 5 are sintered by metallic nano powder. Refer to the second figure. The method 6 provided by the present invention includes the following steps: Step 60, providing a Model of a predetermined pattern of the heat sink 5

200536637 五、發明說明(4) 其中該模型包括與該基底5 0對應的第一部位及與該散熱鰭 片5 2對應的第二部位; 步驟6 2,於該模型之第一部位及第二部位處分別灌入 金屬奈米粉粒; 步驟6 4,將該裝有該金屬奈米粉粒之模型置於惰性氣 氛中進行燒結以形成該散熱裝置5。 請一並參閱第一、二圖,上述之金屬奈米粉粒應選自 具有高導熱性能的金屬材料,如金、銀、銅、紹及其合金 之一種。該金屬奈米粉粒的粒徑最好為1-99奈米。 應指出的是,構成該基底5 0及散熱鰭片5 2之金屬奈米 粉粒可為同一金屬之奈米粉粒(如均選用鋁),亦可分別選 用不同金屬之奈米粉粒(如基底5 0用銅材料、散熱鰭片5 2用 鋁材料)。也就是說,步驟6 2中,可根據實際需要,於該模 型之第一部位及第二部位處分別灌入相同或不同之金屬奈 米粉粒。 另,該散熱裝置5可進一步設置有用於提高其性能之附 著物,如於散熱鰭片表面塗覆奈米碳球等材料以進一步提 高其散熱性能。本實施例中,該附著物為奈米碳管5 4。其 位於該基底50之遠離散熱鰭片52之表面501,且最好垂直於 該表面501。使用時,基於奈米碳管54之優異的軸向導熱 性,其將把CPU產生之熱量迅速傳導至基底50,從而使該散 熱裝置5之散熱效率大幅提高。 其中,該奈米碳管54係採用化學氣相沈積法生長而 成:於該基底5 0之表面5 0 1設置催化劑,並將其置於化學蒸200536637 V. Description of the invention (4) The model includes a first part corresponding to the base 50 and a second part corresponding to the heat dissipation fin 52 2; Step 62: In the first part and the second part of the model Place metal nano-powders into the parts respectively; Step 6.4: Place the model containing the metal nano-powders in an inert atmosphere and sinter to form the heat sink 5. Please refer to the first and second pictures together. The above metal nano particles should be selected from metal materials with high thermal conductivity, such as gold, silver, copper, Shao and their alloys. The particle size of the metallic nano-powder is preferably 1-99 nanometers. It should be noted that the metal nano particles constituting the substrate 50 and the heat dissipation fin 52 may be nano particles of the same metal (if both are selected from aluminum), or nano particles of different metals (such as the substrate 5) may be used separately. 0 with copper material, 5 with aluminum material). That is, in step 62, the same or different metal nano particles can be filled into the first part and the second part of the model according to actual needs. In addition, the heat dissipating device 5 may further be provided with an attachment for improving its performance, such as coating the surface of the heat dissipating fin with a material such as nano carbon balls to further improve its heat dissipating performance. In this embodiment, the attachment is a carbon nanotube 54. It is located on the surface 501 of the substrate 50 away from the heat-dissipating fins 52, and is preferably perpendicular to the surface 501. In use, based on the excellent axial thermal conductivity of the nano carbon tube 54, it will quickly transfer the heat generated by the CPU to the substrate 50, thereby greatly improving the heat dissipation efficiency of the heat dissipation device 5. Among them, the carbon nanotube 54 is grown by chemical vapor deposition: a catalyst is placed on the surface 50 of the substrate 50, and the substrate is placed in a chemical vapor deposition process.

200536637 五、發明說明(5) 氣成長反應器内,通入碳源氣且使其於預定溫度與催化劑 接觸使得奈米碳管5 4基本垂直於該表面5 〇 1長出。可以理解 的是,該製造方法6可進一步包括上述設置該附著物尤其是 該奈米碳管的步驟。 另,本領域技術人貝應知曉,本發明亦可用於製備習 知技術領域之其他形狀之散熱器,而不必限於上述實施 例0 相對於先前技術,本發明採用燒結方式製成散熱裝 置’使得其基底與散熱_片成為一整體,其接觸熱阻顯著 降低。同時,該散熱裝置之基底及散熱鰭片均由具高導熱 性此的金屬奈米粉粒製成,其表面積將遠 統…式(如射出成型)所製得之同體型之散 提尚散熱效率。 乡示上所述,本發明確已 出專利申請。惟,以上所述 舉凡热悉本案技藝之人士, 效修飾或變化,皆應包含於 符合發明專利要件,爰依法提 者僅為本發明之較佳實施例, 於援依本案發明精神所作之等 以下之申請專利範圍内。200536637 V. Description of the invention (5) In the gas growth reactor, a carbon source gas is passed in and brought into contact with the catalyst at a predetermined temperature, so that the carbon nano tube 5 4 grows substantially perpendicular to the surface 501. It can be understood that the manufacturing method 6 may further include the above-mentioned step of disposing the attachment, especially the nano carbon tube. In addition, those skilled in the art should know that the present invention can also be used to prepare other shapes of heat sinks in the conventional technical field, and is not necessarily limited to the above embodiment 0. Compared with the prior art, the present invention uses a sintering method to make a heat sink. The substrate and the heat sink are integrated, and the contact thermal resistance is significantly reduced. At the same time, the base of the heat sink and the heat sink fins are made of metal nano-powders with high thermal conductivity, and its surface area will be far away from the homogeneous type of heat dissipation efficiency (such as injection molding). . As stated above, the invention has indeed been patented. However, those who are well acquainted with the technology of this case, all modifications or changes should be included in compliance with the requirements of the patent for invention, and those who are based on the law are only the preferred embodiments of the present invention, and are made in accordance with the spirit of the invention The scope of the following patent applications.

200536637200536637

Claims (1)

200536637 六、申請專利範圍 1. 一種散熱裝置,其包括基底及位於其上之複數散熱鰭 片,其中,該基底及散熱鰭片係由金屬奈米粉粒經燒 結一體成型而成。 2. 如申請專利範圍第1項所述之散熱裝置,其中,構成該 基底及散熱鰭片之金屬奈米粉粒分別為第一金屬及第 二金屬之奈米粉粒。 3. 如申請專利範圍第1項或第2項所述之散熱裝置,其 中,該金屬奈米粉粒選自金、銀、銅、銘及其合金之 一種。 4. 如申請專利範圍第1項或第2項所述之散熱裝置,其 中,該金屬奈米粉粒的粒徑為1-99奈米。 5. 如申請專利範圍第1項所述之散熱裝置,其中,該散熱 裝置進一步設置有用於提高其性能之附著物。 6. 如申請專利範圍第5項所述之散熱裝置,其中,該附著 物為奈米碳管。 7. 如申請專利範圍第6項所述之散熱裝置,其中,該奈米 碳管位於該散熱裝置基底之遠離該散熱鰭片之表面。 8. —種包括基底及位於其上之複數散熱鰭片之散熱裝置 的製造方法,其包括步驟: 提供一設有該散熱裝置之預定圖形的模型,其中 該模型包括與該基底對應的第一部位及與該散熱鰭片 對應的第二部位; 於該模型之第一部位及第二部位處分別灌入金屬 奈米粉粒,200536637 6. Scope of patent application 1. A heat dissipation device comprising a base and a plurality of heat dissipation fins thereon, wherein the base and heat dissipation fins are integrally formed by sintering metal nano particles. 2. The heat dissipation device according to item 1 of the scope of patent application, wherein the metallic nano particles constituting the base and the heat dissipation fins are nano particles of a first metal and a second metal, respectively. 3. The heat dissipating device according to item 1 or item 2 of the patent application scope, wherein the metal nano particles are selected from the group consisting of gold, silver, copper, Ming, and alloys thereof. 4. The heat dissipation device according to item 1 or item 2 of the scope of patent application, wherein the particle size of the metal nano-powder is 1-99 nanometers. 5. The heat dissipation device according to item 1 of the scope of patent application, wherein the heat dissipation device is further provided with an attachment for improving its performance. 6. The heat dissipating device according to item 5 of the patent application scope, wherein the attachment is a carbon nanotube. 7. The heat sink according to item 6 of the patent application scope, wherein the carbon nanotube is located on a surface of the base of the heat sink away from the heat sink fin. 8. A method for manufacturing a heat sink including a substrate and a plurality of heat sink fins thereon, comprising the steps of: providing a model provided with a predetermined pattern of the heat sink, wherein the model includes a first corresponding to the substrate Part and a second part corresponding to the radiating fin; metal nano powder particles are poured into the first part and the second part of the model, respectively, 第10頁 200536637 六、申請專利範圍 將該裝有該金屬奈米粉粒之模型置於惰性氣氛中 進行燒結以形成該散熱裝置。 9.如申請專利範圍第8項所述之散熱裝置的製造方法,其 中,灌入該模型之第一部位及第二部位處之金屬奈米 粉粒分別為第一金屬及第二金屬之奈米粉粒。 1 〇.如申請專利範圍第8項或第9項所述之散熱裝置的製造 方法,其中,該金屬奈米粉粒選自金、銀、銅、銘及 其合金之一種。Page 10 200536637 6. Scope of patent application The model containing the metal nano powder particles is placed in an inert atmosphere and sintered to form the heat sink. 9. The method for manufacturing a heat dissipation device according to item 8 of the scope of the patent application, wherein the metal nano-powders in the first and second parts of the model are nano-powders of the first metal and the second metal, respectively. grain. 10. The method for manufacturing a heat dissipation device according to item 8 or item 9 of the scope of the patent application, wherein the metal nano particles are selected from the group consisting of gold, silver, copper, Ming, and alloys thereof. 11.如申請專利範圍第8項或第9項所述之散熱裝置的製造 方法,其中,該金屬奈米粉粒的粒徑為卜9 9奈米。 1 2.如申請專利範圍第8項所述之散熱裝置的製造方法,其 中,該製造方法進一步包括於所得之散熱裝置設置用 於提高其性能之附著物的步驟。 1 3.如申請專利範圍第1 2項所述之散熱裝置的製造方法, 其中,該附著物為奈米碳管。 1 4.如申請專利範圍第1 3項所述之散熱裝置的製造方法, 其中,該奈米碳管係採用化學氣相沈積法於該散熱裝 置基底之遠離該散熱鰭片之表面生長而成。11. The method for manufacturing a heat dissipation device according to item 8 or item 9 of the scope of patent application, wherein the particle size of the metal nano particles is 99.9 nanometers. 1 2. The method of manufacturing a heat sink as described in item 8 of the scope of the patent application, wherein the manufacturing method further includes a step of providing an attachment to the obtained heat sink to improve its performance. 1 3. The method for manufacturing a heat dissipation device according to item 12 of the scope of patent application, wherein the attachment is a carbon nanotube. 14. The method for manufacturing a heat sink as described in item 13 of the scope of the patent application, wherein the carbon nanotubes are grown by chemical vapor deposition on a surface of the heat sink base that is far from the heat sink fins. . 第11頁Page 11
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