TW200534459A - Package structure - Google Patents

Abstract

The invention provides a package structure for image sensor with protected sensing area. The image sensor forms at least a conductive interconnection circuit in the lower surface of transparent substrate. A semiconductor image sensing chip connects electricity to the conductive interconnection circuit of the transparent substrate. The surrounding of the chip is filled with encapsulation. The periphery of the image sensing area of the semiconductor image sensing chip defines a dam. The electric connecting point of the semiconductor image sensing chip locates outside the dam.

Description

200534459 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a chip packaged on a flip chip packaged image sensor. Peripheral structures are used to isolate pollution and prevent rain light scattering. ', [Previous technology] The current packaging technology trend is towards the flip-chip (F 1 丨 p ch ip) encapsulation method. This process requires long bumps on the wafer (Bu = process and then after singulation) Soldering back to the circuit contacts on the substrate, the package volume released by it can reach the minimum chip size, and the chip can have direct heat dissipation protection, so the flip chip package is quite in line with the current miniaturization of electronic products. Figure 10 shows a known image sensor flip-chip package 1. The lower surface of the upper glass substrate 80 is formed with a conductive interconnection circuit 8 and a body image. The sensor chip is provided with a large number of pads, which are semi-thermally conductive or reflowed, and are electrically connected to the conductive circuit. 2 ς $ blocks are filled around the die (Underf 丨 丨 丨) And the circuit 〃 8 3 in the peripheral area of the glass substrate constitutes the adhesion of the surface of the airtight circuit board. The problem of this design; _ a tin ball is planted as a filling with the electrical (1) grain around (Underf, In =. The gap between the crystal and the glass substrate is inserted. The image of the grain or the whole coverage to the crystal grains is not easy to control when preparing the plastic material. Therefore, the blurred image of the sensed image is generated (2) The grain image is outside the area of the image, as shown in Figure 11 below. You Gou's broken glass substrate can still be captured by the light-transmitting kernel. For example, the first line T1 and Ding 2 are in Japan _ Coarse Page 200534459 V. Description of the invention (2) The surface is reflected under the glass substrate. The total reflection of the surface is then projected into the image sensing area ^ Therefore, the image sensed at the periphery of the image sensing area will be disturbed. (3) When the conductor image sensor chip and the glass substrate are combined with solder paste reflow soldering or lead or tin bumps In the block manufacturing process, a flux (F 1 ux) is often applied to the welding surface. When reflowing, the solvent volatile gas of the high-temperature flux is partly escaped into the grain image sensing area, thus causing pollution of the image sensing area. Or oxidation, so the quality of image capture is directly affected. [Summary of the invention] The main purpose of the present invention is to solve the above problems and provide a space between the chip sensing area and the pad area of a flip-chip packaged image sensor. To isolate pollution sources and block light scattering In order to achieve the aforementioned object, the present invention provides a protective packaging structure for a sensing area of an image sensing device. The image sensor includes: a transparent substrate, the transparent substrate defines an upper surface and a lower surface, at least on the lower surface of the transparent substrate A conductive connection circuit is formed. The upper surface of a semiconductor image sensing chip is electrically connected to the conductive connection circuit on the lower surface of the light-transmitting substrate, and a plastic material is filled around the die. The periphery of the image sensing area of the semiconductor image sensing chip A bank is defined, and the electrical connection point of the semiconductor image sensing chip is defined outside the bank. The above-mentioned objects and advantages of the present invention can be easily understood from the detailed description and accompanying drawings of the selected embodiments below. . [Implementation method] Please refer to Figs. 1 and 2, the ones shown in the figures are selected for the present invention.

Page 6 200534459 V. Description of the invention (3) The structure of the embodiment "This is for illustration only" is not subject to patent applications; such structure is limited. The image sensor of this embodiment includes: a light-transmitting substrate 1, the light-transmitting substrate defines an upper surface 11 and a lower surface 1 2, and at least a conductive connection circuit 1 2 1 is formed on the lower surface of the light-transmitting substrate and a surrounding The frame-shaped dam 1 2 2 is shown in FIG. 3. The method of manufacturing the dam is one of the following methods: (1) Applying a screen printing method to a predetermined position on the lower surface of the light-transmitting substrate. (2) Applying on a predetermined position on the lower surface of the light-transmitting substrate by a dispensing method. (3) It is formed at a predetermined position on the lower surface of the light-transmitting substrate by injection. (4) The dam forming method is formed on the surface of the light-transmitting substrate at a predetermined position by a deposition method. (5) The dam is integrally injection-molded with the light-transmitting substrate, as shown in FIG. 4 (6) The dam-forming method is an independent frame prefabricated by, for example, injection molding technology, and the dam is adhered to the surface of the light-transmitting substrate for a predetermined time. Location, as shown in Figure 5. The dam material is selected from UV glue, epoxy resin, rubber, plastic or other non-conductive materials.

A semiconductor image sensing wafer 2 has a pad 2 on its upper surface electrically connected to a conductive connection circuit on the lower surface of a light-transmitting substrate. In this example, a solder ball 22 is used as a reference for the electrical connection method. The pre-curing step, for example, (1), (2) The dam material in the manufacturing method uses UV glue, which can be quickly cured by UV light exposure, and finally filled around the crystal grains (Under fi 1 1

Page 7 200534459 Wuming 2 Dezhiming 4 Hair spray The photogram of the finished device ’s sensory image is shown in the figure. The embankment is on the embankment 2-2 with ball tin tin and surrounding 1 outside 2 ο pad 2 welding area In the test, the sensing crystal should be like a special film, the body crystal guide, the semi-sensing, the image fixing circle, and the guiding half should be set to 4 2. The dyke will be the main example to implement it. On the side of the outer soil, the area of the square is measured by a 9-square method. The image of the sensing dam is measured by the t / selection method. The dam is covered with a square screen to measure the image. The plate crystal sensor image is positioned halfway in the preset surface. The outer area is set as shown in the figure to surround the outer area. The rubber-coated coated square sensor image is used for the film crystal image sensor. The setting image of the preset surface is shown in the figure as shown in Figure 7. For example, if the prefabrication technique of the body frame is independently formed to form the wall of the wall and the outer area of the bank, the sensor image will be guided to the sticky bank or plastic moon rubber. Oxygen 〇 ring display, the rubber map V 8 U Di Yuru 'was selected as a bit material fixed material pre-dam surface high dyke bad dyke in the real device measurement ◦ sensor material image material shadow_c 一二 ^ 一一Two types of electrical conductivity revealed bh and, in January he asked for it It is necessary to pass through the plate under the surface and touch the light to penetrate. After the termination is connected to the dam dyke, the chip is mounted and tested. It feels like a shadow, and the body h3 lead is half as small as possible. Sensing the outer area of the film

Page 8 200534459

The embankment is isolated, and the outside of the dam is cleaned when the subsequent agent volatile gases are all covered by the dam rubber. Semiconductor image sensing wafers, such as solder balls, are blocked by the reflow process, of course, including the adhesive material that blocks the escape. Therefore, the solder pads are defined by the flux filling (U nderfi 1 1) generated by the bank to effectively maintain the sensor. On the other hand, as shown in Figure 9, when the dam is made of black or non-reflective material, the captured image light L1 and L2 pass through the glass substrate and are projected on the periphery of the substrate grain image sensing area. The surface of the crystal grain is reflected and blocked by the dam '. Therefore, the image sensed at the periphery of the image sensing area will not be disturbed. Similarly, the captured image light L3 passes through the glass substrate and is projected in the field. Therefore, when the dam material is non-reflective The light material, light L 3 is suppressed and not reflected to the image sensing area. Say

Page 9 200534459 Brief description of the diagram [Schematic diagram 1st 2nd 3rd 4th 5th 6th 7th 8th 9th 1st 1st [illustration (Xi glass substrate solder ball 8 2 (description of this order The drawing is the first drawing of the present invention. The drawing is the structural diagram of the present invention. The schematic diagram of the position of the present invention is the outside map of the sensing area of the present invention. The predetermined value of the present invention is the surface pre-drawing of the present invention. The present invention is not intended. 0 is a picture of the prior art. 1 is a picture of the inadvertent. The use part) 8 0 invention part) the structural diagram of the image sensor with a polycrystalline package. Top view of the structure of a flip-chip packaged image sensor. The dam is provided on the lower surface of the transparent substrate. Image sensing of the dyke and the transparent substrate integrally formed 〇 After the dyke is formed, it is adhered to the predetermined image on the surface of the transparent substrate. Schematic image of the dam set on the semiconductor image sensing chip. Semiconductor images are not intended. After the dam is formed ... To Semiconductor Image Sensing Set the image capture light path of the daily package image detection. Composition. Nong W image sensing π shirt image capture light path table said conductive connection circuit 8 filling plastic 8 3

200534459 Schematic description of the bottom surface of the light-transmitting substrate 1 1 2 dam 1 2 2 2 2 pads 2 1 filling material 2 3 2 1—I piece 2 day 0a 1 road sense 1 electric image ο ^ ~ ^ 2 2 surface conjoined 2 zone surface conductivity ball to measure the upper half of the sense of tin

Page 11

Claims (1)

200534459 6. Scope of patent application An image sensor includes: a lower surface, a conductive connecting adhesive material for (conduct i volume image sensing), and a semi-conductor 2 4 one bank contact according to application and sealing chip Jingyi application of sealing material. The application of the protective conductor and the application of the dam, and the application of the patented structure on the dam, the patented structure of the structure, the electrical structure of the patented structure, the patented structure, and the patented structure of the measuring instrument. The sensing area protects the light-transmitting substrate. The light transmission is less than the lower surface of the light-transmitting substrate. The upper surface of the chip is electrically connected to the circuit, and the perimeter of the grain lies in: The volume image sensing wafer thus defines the outside of the semiconductor. Scope The item described in item 1, wherein the dam is the periphery of the sensing area. The item described in item 2, wherein the height of the dam is connected to the underside of the transparent substrate. The item described in item 3, wherein the dam material is selected from a packaging structure. The image sensing substrate defines an upper surface and a conductive connection circuit (on circuit) formed on the surface; and is connected to the transparent substrate surrounding filling (Underf half of the lower surface is ill) ) The electrically connected image sensing device sensing area defining an image sensing chip on the periphery of the image sensing area is shaped to prevent the sensing area of the semiconductor image sensing image sensing device from forming at least a gap formed by the semiconductor image sensing surface. . The sensing area of the image sensing device is protected from black, non-reflective light. The sensing area of the sensing area of the image sensing device described in item 4 above is formed by screen printing on a predetermined position on the surface of the semi-detecting wafer. The sensing area of the image sensing device described in item 4 of the scope, the dam forming method is applied in a semi-dispensed manner Page 12 200534459 VI. Patent application scope Conductor image 7 · Specially packaged junction conductor image 8 as required by application · Specially packaged junction conductor image 9 as required by application · Special protection package independent frame predetermined position 10 upon application · Protective cover as requested 〇1 1 · Protect the image sensor pitch according to the application area. 1 2 · Area protection according to application Black, 1 3 · Area protection according to application Cover the predetermined position on the surface of the transmissive sensor. According to the fourth aspect of the invention, the dam forming method is an injection molding method for forming a semi-sensing wafer surface at a predetermined position on the surface of the semi-sensor wafer. According to the fourth aspect of the invention, the dam forming method is a method of forming a dam on a semi-sensing wafer surface at a predetermined position on the surface of a semi-sensor wafer. The structure of the sensing area of the image sensing device described in item 4 of the scope of interest, the dam forming method is prefabricated by molding technology, and then the dam is adhered to the surface of the semiconductor image sensing wafer. The image described in item 1 of the patent range The sensing device structure of the sensing device, wherein the dam is an image sensing device sensing package structure described in item 10 of the patent scope of the following table, wherein the height of the dam is at least the electrical property of the semiconductor chip The image-sensing device sensing package structure described in item 11 of the patent scope formed by being connected to the lower surface of the light-transmitting substrate, wherein the selection conditions of the dam material are to select non-reflecting light materials. The image sensing device sensing package structure described in item 12 of the patent scope 'The bank formation method is to apply a screen printing method to a predetermined position on the surface of a substrate. Page 13 200534459 < Scope of patent application 4 · By applying for zone protection Overlay 5 · By applying for zone protection type at through 6 · By applying for zone protection type at through 7 · In accordance with the application of zone protection system unique position. 8 · According to the application area protection type. Patent scope No. package structure, optical substrate surface patent range No. package structure, optical substrate surface patent range No. package structure, optical substrate surface patent range No. package structure, stand frame, and then patent scope No. package structure No. 12 The location of the dam at the predetermined location 12 is the location of the dam at the 12 location. The location of the dam at the 12 location is the location of the dam at 12 locations. The image sensing method of the shooting method is based on the method of the image sensing method of the shooting method. The method of coating the device sensing method is to apply the device sensing glue method to the device sensing type by writing to the transparent substrate. The technical pre-surface is scheduled to be sensed by the image sensing device as described in Item 2 wherein the dam is integrated with the light-transmitting substrate Φ Page 14