200533728 · (1) ' 九、發明說明 【發明所屬之技術領域】 本發明係關於適合於將保持基板暫時接著於提供1虫刻 、 的半導體晶圓之暫時接著用蠟。 _ 【先前技術】 在對於半導體晶圓實施貫通飩刻等的加工之情況時’ 使用在形成有光阻劑膜之半導體晶圓預先暫時接著保持基 · 板者（以下稱爲「被蝕刻材」）。 其理由如下。 例如，在藉由電漿處理進行貫通蝕刻之情況時’通常 ，爲了防止基板的高溫化，而在基板的背面側塡充有冷卻 氣體之狀態下進行。因此，當僅經半導體晶圓提供貫通蝕 刻時，則在貫通時此冷卻氣體會釋放至處理室。因此，爲 了防止冷卻氣體釋出，而將保持基板暫時接著於半導體晶 圓的背面。又，在厚度爲ΙΟΟμπι左右的極薄半導體晶圓單 f 體，不具有可承受貫通蝕刻加工等的強度，會造成在加工 過程中產生裂縫或彎曲等的缺點。因此，進行將半導體晶 圓暫時接著於較該晶圓厚且具有充分強度之保持基板。以 _ 往，將接合劑塗佈於保持基板，係藉由網板印刷來進行。 _ 圖1係顯示以往使用網板印刷之暫時接著方法的圖， (a )爲顯示將接合劑塗佈至保持基板之塗佈方法，（b ) 爲顯不保持基板與半導體晶圓之暫時接著的過程，（c ) 爲顯示黏合這些之後的狀態。如圖1 ( a )所示，準備在固 -4- 200533728 (2) 定保持基板1之上部承載接合劑2之網板3，藉由使橡膠 片等的葉片4移動於網板3上，將接合劑2塗佈於保持基 板1上。如圖1 ( b )所示，將半導體晶圓5承載於塗佈有 網板3之保持基板1上，藉由將其在真空烘箱內加熱、脫 泡，獲得如圖1 ( c )所示的被蝕刻材。200533728 · (1) 发明 Description of the invention [Technical field to which the invention belongs] The present invention relates to the temporary bonding of a holding substrate to a semiconductor wafer provided with a worm, and a temporary bonding with wax. _ [Prior art] When semiconductor wafers are subjected to processing such as through-etching, etc., 'A semiconductor wafer on which a photoresist film is formed is used to temporarily hold a substrate and a board in advance (hereinafter referred to as "etched material"). ). The reason is as follows. For example, in the case of through-etching by plasma treatment, it is generally performed in a state where a cooling gas is filled on the back side of the substrate in order to prevent the substrate from becoming hot. Therefore, when the through etching is provided only through the semiconductor wafer, the cooling gas is released to the processing chamber during the through. Therefore, in order to prevent the release of the cooling gas, the holding substrate is temporarily adhered to the back surface of the semiconductor wafer. In addition, an ultra-thin semiconductor wafer unit f having a thickness of about 100 μm does not have the strength to withstand through-etching and the like, and may cause defects such as cracks or warpage during processing. Therefore, a semiconductor wafer is temporarily attached to a holding substrate that is thicker than the wafer and has sufficient strength. Application of the bonding agent to the holding substrate from _ is performed by screen printing. _ Figure 1 is a diagram showing a temporary bonding method using conventional screen printing. (A) shows a coating method for applying a bonding agent to a holding substrate, and (b) shows temporary bonding between a holding substrate and a semiconductor wafer. (C) shows the state after gluing these. As shown in FIG. 1 (a), a stencil 3 for carrying the bonding agent 2 on the upper part of the solid holding substrate 1 200533728 (2) is prepared, and the blade 4 such as a rubber sheet is moved on the stencil 3, The bonding agent 2 is applied onto the holding substrate 1. As shown in FIG. 1 (b), the semiconductor wafer 5 is carried on a holding substrate 1 coated with a stencil 3, and it is heated and defoamed in a vacuum oven to obtain the shape shown in FIG. 1 (c). Etched material.
在網板印刷，由於不易將黏度低的接合劑均等地塗佈 至保持基板上，並且如此黏度低之接合劑不易在保持基板 上安置，故塗佈時須要使用具有l〇Pa*s以上的高黏度之 接合劑。一方面，在如此黏度高之接合劑，由於不易將塗 佈厚度作薄（通常塗佈厚度爲5 0 Ομτη左右），故以熱傳導 性低之接合劑，無法有效地防止在進行蝕刻時所造成的半 導體晶圓高溫化。In screen printing, it is not easy to evenly apply a low-viscosity adhesive to a holding substrate, and it is difficult to place such a low-viscosity adhesive on a holding substrate. Therefore, it is necessary to use High viscosity bonding agent. On the one hand, because of the high viscosity of the adhesive, it is difficult to make the coating thickness thin (usually the coating thickness is about 50 μτη). Therefore, the adhesive with low thermal conductivity cannot effectively prevent the problem caused by etching. High temperature of semiconductor wafers.
因此，在網板印刷，使用例如氮化鋁及聚合體的混合 劑等黏度高並且熱傳導性良好之滑脂（以下稱爲「熱傳導 性滑脂」）。但，在根據使用熱傳導性滑脂的網板印刷之 塗佈方法，會產生下述問題。 (1 )由於熱傳導性滑脂之黏度高，故在塗佈後的熱 傳導性滑脂內容易產生細微的氣泡。 (2 )由於熱傳導性滑脂之黏度高，不易控制厚度， 故容易產生塗佈厚度之不均。 (3 )半導體晶圓係經過加工工序後加熱，而由保持 基板剝離。此時，熱傳導性滑脂內的氮化鋁不會熔融’殘 存於半導體晶圓之背面，這會產生污染。 (4 )熱傳導性滑脂，爲市面販賣者，但由於爲非常 - 5- 200533728 (3) 昂貴之材料，故會導致製造成本上升。 當在藉由以往的方法所製造的被蝕刻材實施控溝蝕刻 (trench etching )之情況，-.旦產生上述（丨）或（2 )之 問題時，則蝕刻中的冷卻變得不均等，蝕刻形狀變得不穩 定。又’通常’半導體晶圓係在藉由蝕刻加工成預定形狀 後，安裝玻璃等的構件，但一旦產生上述（3 )之問題時 ’則半導體晶圓與玻璃等的構件之密著性變差。 【發明內容】 〔發明所欲解決之課題〕 因此’本發明者們係作爲代替網板印刷之嶄新的黏合 構件之製造方法，提案出：針對圖2及圖3所示的黏合構 件之暫時接著，使用鱲之方法（如日本特願2003-176445 號）。關於其詳細內容如後所述，但若根據此方法的話， 則能夠在保持基板上不會產生大量的氣泡，且能夠均等且 薄狀地塗佈蠟膜。又，蠟比起前述熱傳導性滑脂廉價，且 不含有造成半導體晶圓背面的污染之原因的氮化鋁等。因 此，能夠解決上述（1 )〜（4 )之問題。 本發明者們精心硏究之結果，可得知，在此薪新的被 蝕刻材的製造方法，所使用的蠟被要求下述物性。 (a )在半導體晶圓與保持基板之暫時接著工序，爲 了在保持基板上均等且薄狀地形成躐膜，必須蠟具有流動 性也就是充分地熔融。其中，當黏合時基板的溫度超過 Π 〇 t，則會有形成於半導體晶圓上的光阻劑膜熔融，其 -6 - 200533728 (4) 側壁垂下’蝕刻後的尺寸精度降低之情況。因此，使用於 此方法的鱲係被要求在1 1 〇 °C下也具有充分之流動性。 (b )被蝕刻材係進行蝕刻時，加熱至5 0〜7 0 °C左右 。此時’當蠟熔融而由黏合面滲出時，則曝露於電漿而粉 狀化，飛散處理室內。一旦此附著至電極時，則會導致蝕 刻裝置故障。因此，使用於此方法的蠟係被要求在8 0 °C以 下幾乎不會熔融。 (c )被蝕刻材係藉由浸漬於在蝕刻後保持於丨〇 5〜 1 l〇°C左右的一定溫度之NMP ( N-甲基-2-吡咯烷酮）來剝 離。當此時的蠟之黏度過高則進行剝離需要長時間。又， 由能量成本'的觀點來看，被要求儘可能地藉由浸漬於低溫 之NMP，使得容易剝離。 即使在矽晶圓之製造工序，例如進行硏磨時，爲了確 保晶圓的強度，而使用暫時接著有保持基板者。然後，晶 圓一般係於硏磨後，藉由刮刀由保持基板機械性地剝離。 但’實施有貫通蝕刻之半導體晶圓係由於不具有可承受如 此機械性剝離之強度，故浸漬於上述NMP，藉由化學手段 加以剝離。 本發明之目的係在於提供一種即使在暫時接著、蝕刻 及剝離之任一工序，不會產生壞影響之被蝕刻材的暫時接 著用蠟。 〔用以解決課題之手段〕 本發明之要旨係「一種被蝕刻材的暫時接著用蠟，其 -7- 200533728 (5) 特徵爲：在8(TC之黏度爲1.7Pa · s以上，且在100°C之 度爲0.5 0 P a · s以下，而軟化點爲5 7 °C以上。」此蠛係 如以質量％，含有4 0〜5 0 %之松香、2 0〜3 0 %之酸改質 香、2 0〜3 0 %之高級脂肪酸。 【實施方式】 1 .針對本發明之蠟 本發明之蠟，其特徵爲在80 °C之黏度爲1.7Pa*s 上，且在100°C之黏度爲〇.50Pa· s以下，而軟化點爲 °C以上。再者，黏度係在將蠟加熱至預定溫度後，使 C F T - 5 0 0 (島津製作所製造）所測定到的値。 (A) 80°C之黏度：1.7Pa· s以上 在8 0 °C之黏度未滿1 · 7 P a · s之情況，當進行蝕刻 ，蠟熔融而由黏合面滲出。如此所滲出之蠟係曝露於電 而粉狀化，飛散處理室內。因此’將在8 0 °C之黏度作 1.7Pa · s以上。而由蝕刻的觀點來看’在8(TC之黏度若 1 .7Pa · s以上的話，則不會產生問題，但當超過2.5 Pa 以上時，則爲了使蠟流動所進行加熱之時間變成需要長 間。因此，在80°C之黏度期望爲2.5Pa · s以上。 (B) 100°C 之黏度：〇.5〇Pa· s 以下 在loot之黏度超過0.5 OPa · S時’則無法獲得充 之流動性。因此，在塗佈蠟時，會有無法均等地塗佈， 法獲得充分之接著強度的問題產生。又’進行蠟之剝離 需要長時間。因此，將l〇〇°C之黏度作成0.50Pa · s以 黏 例 松 以 57 用 時 漿 成 爲 .s 時 分 Μ 下 200533728 (6) (C )軟化點：5 7 °C以上 在軟化點未滿5 7 C之情況時，即使8 0 °C之黏度爲 2 · 5 P a · s以上’當進行蝕刻時，蠟也會熔融，而由黏合面 滲出，其露於電漿而粉狀化，飛散處理室內。因此，需要 將本發明的繼之軟化點作成57°C以上。軟化點係根據jIS K-2207所規定之環球法來測定。 本發明之蠟係可舉出例如以質量％，含有40〜50%之 松香、2 0〜3 0 %之酸改質松香、2 0〜3 0 %之高級脂肪酸。 (D )松香：4 0〜5 0 % 松香係天然樹脂的一種，以松香酸爲主成分之各種異 性體的混合物。具有引出蠟之接著力的效果。但，在其含 有量未滿40%之情況時，接著力不充分，而當超過5〇%時 ’則不易進行軟化點、黏度之調整。因此，松香之含有量 期望爲4 0〜5 0 %。再者，作爲使用於本發明的蠟之松香， 具有固松脂、無油松香（colophony)、松脂。 (E )酸改質松香：2 0〜3 0 % 酸改質松香係二鹽基酸與松香之改質物，始有使黏度 、軟化點改變之效果。在酸改質松香之含有量未滿2 〇 %時 ，則在80°C之黏度、軟化點變得不充分，如前所述，在進 行鈾刻時’容易產生滲出、粉狀化之問題。而當超過3 〇% 之情況時’則會有在1 0 0 °C之黏度過高，變得不易將蠟進 行均等塗佈，又，進行晶圓剝離時需要花費長時間之虞。 因此’酸改質松香之含有量期望爲20〜3〇%。再者，作爲 -9- 200533728 (7) 酸改質松香，能夠使用丁烯二酸改質松香。 (F )高級脂肪酸：20〜30% 高級脂肪酸係指鏈式單羧酸中碳素數大者。高級脂肪 — 酸係具有使黏度、軟化點改變之效果◦在其含有量未滿 - 20%之情況時，則會有1 00 °C之黏度過高，變得不易將蠟 進行均等塗佈，又，進行晶圓剝離時需要花費長時間之情 況產生。一方面，當超過30%之情況時，在80 °C之黏度、 軟化點變得不充分，如前所述，在進行蝕刻時，容易產生 φ 滲出、粉狀化之問題。因此，高級脂肪酸之含有量期望爲 20〜3 0%。再者，作爲高級脂肪酸，能夠使用硬脂酸、軟 脂酸。 在本發明之蠟，除了上述成分以外，亦可含有用來提 高與矽氧化膜之親和性的界面活性劑等。又，本發明之蠟 係例如能夠藉由同時將上述松香、酸改質松香、高級脂肪 酸裝入至鍋，在將鍋之溫度保持於100〜25 0°C之狀態下進 行攪拌，來加以製造。 · 2 ·本發明之蠟的使用例 針對本發明之蠟的使用方法不特別限定，但例如可藉 ， 由下述方法來使用。以下，說明關於本發明之蠟的使用例 〇 圖2及圖3係顯示本發明者們所先提案之新的被蝕刻 材之製造裝置的圖。如圖2所示，新的被蝕刻材之製造裝 置6係具有：用來保持液體狀蠟7之密閉容器8、將液體 -10- 200533728 (8) 狀蠘7塗佈於保持基板1之塗佈片1 0、及將液體狀蠟7輸 送至塗佈片之管11。此時’在密閉容器8內係藉由加 熱器（加熱，在1 1 0 °c以下的一定溫度受到保持。 在密閉容器8之空隙部’因導入非反應性氣體’所以 液體狀蠟7經由管1 1從塗佈片1 0滲出。在此狀態下藉由 使保持基板1下降接觸於塗佈片1 〇，將蠟7塗佈至保持基 板1。如此，若再以非反應性氣體的壓力使蠟7由塗佈片 1 0滲出之狀態下，將蠟7塗佈至保持基板1的話，則在被 塗佈的蠟7中不會產生氣泡。 如圖3 ( a )所示，在新的被蝕刻材之製造裝置6，例 如在藉由旋轉手段1 3支承其上面之保持基板1的下面塗 佈有蠟7後，使旋轉手段1 3上升至預定位置。在此位置 ，旋轉手段1 3旋轉，塗佈於保持基板1的下面之蠟7係 藉由離心力由旋轉中心朝外側寬廣地塗佈。然後，如圖3 (b )所示，多餘地塗佈之蠟7係由於受到離心力所飛散 ，固在保持基板1的表面不會有塗佈厚度不均之情況，能 夠形成均等且薄型之蠟膜。 被蝕刻材係使用上述裝置將蠟塗佈於保持基板後，將 預先形成有光阻劑之半導體晶圓，例如在蠟熔融的狀態下 承載，將其在真空烘箱內加熱、脫泡來製造。此被蝕刻材 係一旦冷卻至常溫後，供給進行蝕刻。 〔實施例1〕 使用表1所示之蠟，使用圖2及圖3所示的裝置將保 -11 - 200533728 (9) 持基板（厚度5 2 5 μιη )暫時接著於被蝕刻材（厚度1 0 0 μηι )者，藉由電漿處理提供至貫通蝕刻，進行評價蠟的塗佈 容易度（塗佈性）、蝕刻時的舉動（蝕刻性）、及剝離容 易度（剝離性）之實驗。將這些結果，以「◎」顯示最優 良、「〇」顯示良好、「X」顯示不良，記錄於表1。Therefore, for screen printing, a grease with high viscosity and good thermal conductivity, such as a mixture of aluminum nitride and a polymer (hereinafter referred to as "thermally conductive grease"), is used. However, according to the coating method using screen printing using thermally conductive grease, the following problems arise. (1) Since the thermally conductive grease has a high viscosity, fine bubbles are liable to be generated in the thermally conductive grease after coating. (2) Since the viscosity of the thermal conductive grease is high, it is not easy to control the thickness, so it is easy to cause uneven coating thickness. (3) The semiconductor wafer is heated after being processed, and is peeled from the holding substrate. At this time, the aluminum nitride in the thermally conductive grease does not melt and remains on the back surface of the semiconductor wafer, which may cause contamination. (4) Thermally conductive grease is a seller on the market, but because it is very-5-200533728 (3) expensive material, it will increase the manufacturing cost. When trench etching is performed on a material to be etched manufactured by a conventional method,-once the above problems (丨) or (2) occur, the cooling during etching becomes uneven, The etched shape becomes unstable. Also, the "normal" semiconductor wafer is a member that is mounted with a glass or the like after being processed into a predetermined shape by etching, but once the above-mentioned problem (3) occurs, the adhesion between the semiconductor wafer and the member such as glass deteriorates . [Summary of the Invention] [Problems to be Solved by the Invention] Therefore, the present inventors have proposed a new bonding member manufacturing method instead of screen printing, and proposed: temporarily bonding the bonding member shown in FIG. 2 and FIG. 3 , Using the method of 鱲 (such as Japanese Patent Application No. 2003-176445). The details will be described later, but according to this method, a wax film can be applied uniformly and thinly without generating a large number of bubbles on the holding substrate. In addition, wax is cheaper than the aforementioned thermally conductive grease and does not contain aluminum nitride or the like that causes contamination on the back surface of semiconductor wafers. Therefore, the problems (1) to (4) described above can be solved. As a result of careful study by the present inventors, it can be understood that the wax used in the new method for producing a material to be etched requires the following physical properties. (a) In the temporary subsequent process of the semiconductor wafer and the holding substrate, in order to form a thin film uniformly and thinly on the holding substrate, the wax must have fluidity, that is, be sufficiently melted. Among them, when the temperature of the substrate exceeds Π t at the time of bonding, the photoresist film formed on the semiconductor wafer may be melted, and its dimensional accuracy may decrease after the side wall is etched. Therefore, the actinides used in this method are required to have sufficient fluidity even at 110 ° C. (b) When the material to be etched is etched, it is heated to about 50 to 70 ° C. At this time, when the wax melts and oozes out from the bonding surface, it is exposed to the plasma to be powdered and scattered in the processing chamber. Once this is attached to the electrode, it will cause the etching device to malfunction. Therefore, waxes used in this method are required to hardly melt below 80 ° C. (c) The material to be etched is peeled off by immersion in NMP (N-methyl-2-pyrrolidone) maintained at a constant temperature of about 1-5 to 10 ° C after the etching. When the viscosity of the wax at this time is too high, it takes a long time to perform peeling. From the viewpoint of energy cost, it is required to be easily peeled by immersing in NMP at a low temperature as much as possible. Even in the manufacturing process of silicon wafers, such as honing, in order to ensure the strength of the wafer, a person who temporarily holds a substrate is used. Then, the crystal circle is generally subjected to honing, and then mechanically peeled from the holding substrate by a doctor blade. However, since the semiconductor wafer subjected to through-etching does not have the strength to withstand such mechanical peeling, it is immersed in the NMP and peeled off by chemical means. An object of the present invention is to provide a wax for temporary bonding of an etched material which does not have a bad influence even in any of the steps of temporary bonding, etching and peeling. [Means to Solve the Problem] The gist of the present invention is "a wax to be temporarily adhered to a material to be etched, and its -7-200533728 (5) is characterized in that its viscosity at 8 (TC is 1.7Pa · s or more, and The temperature at 100 ° C is 0.5 0 P a · s or less, and the softening point is 57 ° C. or higher. "This is based on mass%, which contains 40 to 50% of rosin and 20 to 30% of rosin. Acid-modified fragrance, 20 ~ 30% higher fatty acid. [Embodiment] 1. The wax of the present invention is characterized in that the viscosity at 80 ° C is 1.7Pa * s, and at 100 The viscosity at ° C is below 0.50 Pa · s and the softening point is above ° C. In addition, the viscosity is determined by heating the wax to a predetermined temperature and then measuring CFT-5 0 0 (manufactured by Shimadzu Corporation). (A) Viscosity at 80 ° C: 1.7Pa · s or more at 80 ° C and less than 1 · 7 P a · s. When etching is performed, the wax melts and oozes out from the bonding surface. So oozing out The wax is exposed to electricity, powdered, and scattered in the processing chamber. Therefore, 'the viscosity at 80 ° C will be 1.7 Pa · s or more. From the viewpoint of etching', the viscosity at 8 (TC is 1. 7 Pa ·If it is more than s, no problem will occur, but if it exceeds 2.5 Pa or more, it takes a long time to heat the wax for flowing. Therefore, the viscosity at 80 ° C is expected to be 2.5 Pa · s or more. B) Viscosity at 100 ° C: 0.50Pa · s or less When the viscosity of the loot exceeds 0.5 OPa · S, sufficient fluidity cannot be obtained. Therefore, when applying wax, there is a possibility that it cannot be applied evenly. However, the problem of obtaining sufficient bonding strength occurred. It also took a long time to peel the wax. Therefore, the viscosity at 100 ° C was made 0.50Pa · s to make it loose for 57 hours and the pulp became .s hours. 200533728 (6) (C) Softening point under Μ: 5 7 ° C or more When the softening point is less than 5 7 C, even if the viscosity at 80 ° C is 2 · 5 P a · s or more 'When performing etching The wax also melts, but oozes out from the bonding surface. It is exposed to the plasma and powdered and scattered in the processing chamber. Therefore, the softening point of the present invention needs to be made above 57 ° C. The softening point is based on jIS K- It can be measured by the ring and ball method specified in 2207. Examples of the wax system of the present invention include 4% by mass and 4% by mass. 0 ~ 50% of rosin, 20 ~ 30% of acid-modified rosin, and 20 ~ 30% of higher fatty acids. (D) Rosin: 40 ~ 50% of rosin is a natural resin based on rosin acid It is a mixture of various heterosexual bodies as the main component. It has the effect of drawing out the adhesive force of wax. However, when the content is less than 40%, the adhesive force is insufficient, and when it exceeds 50%, it is difficult to adjust the softening point and viscosity. Therefore, the content of rosin is desirably 40 to 50%. Furthermore, as the rosin of the wax used in the present invention, there are solid rosin, oil-free rosin (colophony), and rosin. (E) Acid modified rosin: 20 ~ 30% acid modified rosin is a modified product of dibasic acid and rosin, which has the effect of changing viscosity and softening point. When the content of acid-modified rosin is less than 20%, the viscosity and softening point at 80 ° C become insufficient. As mentioned above, the problem of oozing and powdering is easy to occur when uranium carving is performed. . When it exceeds 30%, the viscosity at 100 ° C is too high, which makes it difficult to uniformly coat the wax, and it may take a long time to perform wafer peeling. Therefore, the content of the 'acid-modified rosin' is desirably 20 to 30%. Furthermore, as -9-200533728 (7) acid-modified rosin, butadiene-modified rosin can be used. (F) Higher fatty acids: 20 ~ 30% Higher fatty acids refer to the larger carbon number in the chain monocarboxylic acid. High-grade fat-acid system has the effect of changing the viscosity and softening point. When the content is less than -20%, the viscosity at 100 ° C will be too high, making it difficult to evenly coat the wax. In addition, it takes a long time to perform wafer peeling. On the other hand, when it exceeds 30%, the viscosity and softening point at 80 ° C become insufficient. As described above, when etching is performed, problems such as φ bleeding and powdering tend to occur. Therefore, the content of higher fatty acids is expected to be 20 to 30%. Further, as the higher fatty acid, stearic acid and palmitic acid can be used. The wax of the present invention may contain, in addition to the above-mentioned components, a surfactant and the like for improving the affinity with the silicon oxide film. In addition, the wax system of the present invention can be produced by, for example, simultaneously loading the above-mentioned rosin, acid-modified rosin, and higher fatty acids into a pot, and stirring while maintaining the temperature of the pot at 100 to 25 ° C. . · 2 · Examples of using the wax of the present invention The method of using the wax of the present invention is not particularly limited, but it can be used, for example, by the following method. Hereinafter, an example of using the wax of the present invention will be described. FIG. 2 and FIG. 3 are diagrams showing a manufacturing apparatus of a new material to be etched proposed by the present inventors. As shown in FIG. 2, the new manufacturing device 6 for the material to be etched has a sealed container 8 for holding a liquid wax 7, and a coating for applying liquid -10- 200533728 (8) shape 蠘 7 to the holding substrate 1. The cloth sheet 10 and the liquid wax 7 are conveyed to the tube 11 of the coated sheet. At this time, 'the sealed container 8 is maintained by a heater (heated and maintained at a certain temperature of 110 ° C or lower. In the gap portion of the sealed container 8' a non-reactive gas is introduced ', the liquid wax 7 passes through The tube 11 oozes from the coating sheet 10. In this state, the holding substrate 1 is brought down into contact with the coating sheet 10, and the wax 7 is applied to the holding substrate 1. Thus, if a non-reactive gas When the wax 7 is exuded from the coating sheet 10 under pressure, when the wax 7 is applied to the holding substrate 1, no bubbles are generated in the coated wax 7. As shown in FIG. 3 (a), The new manufacturing apparatus 6 for the material to be etched is, for example, coated with a wax 7 on the lower surface of the holding substrate 1 supported by the rotating means 13 to raise the rotating means 13 to a predetermined position. At this position, the rotating means 1 3 Rotation, the wax 7 applied on the lower surface of the holding substrate 1 is widely applied from the center of rotation to the outside by centrifugal force. Then, as shown in FIG. 3 (b), the excessively applied wax 7 is subjected to The centrifugal force is scattered, and the surface of the holding substrate 1 does not have uneven coating thickness. An even and thin wax film is formed. The material to be etched is coated with a wax on a holding substrate using the above-mentioned device, and then a semiconductor wafer in which a photoresist is formed in advance is carried, for example, in a state where the wax is melted, and the wafer is placed in a vacuum oven It is manufactured by internal heating and defoaming. Once the material to be etched is cooled to normal temperature, it is supplied for etching. [Example 1] The wax shown in Table 1 was used, and the equipment shown in Figure 2 and Figure 3 was used to protect Bao-11. -200533728 (9) Those who hold the substrate (thickness 5 2 5 μm) temporarily adhere to the material to be etched (thickness 100 μm) and provide through-etching by plasma treatment to evaluate the ease of coating the wax (coating The results are shown in the following table: "◎", the most excellent, "0", good, and "X" bad, and recorded in the table. 1.
-12- (10)200533728 I 結果 剝離性 ◎ ◎ ◎ ◎ ◎ ◎ 1 ◎ 丨蝕刻性 ◎ ◎ X X X X 1 X 塗佈性 ◎ 〇 ◎ ◎ ◎ ◎ X ◎ 組成(質量％) 萜烯酚 1 1 1 1 1 o 1 眶 非離子型界面活性劑 <1.0 1 <1.0 1 1 1 1 1 鑛物性鱲 1 1 1 1 1 1 1 蜜鱲 1 1 1 1 1 1 1 高級脂肪酸 Ό CN 37** 37** 36** -** j 1 42** 酸改質松香 00 <N 1 14** -1 70** 42** 松香 〇 On 30** 16** 黏度(Pa · S) 100°C 0.39 ! 0.34 0.06 0.07 0.07 0.26 0.52* 0.22 80°C 2.12 1.72 0.14* 0.10* 0.20* 1.10* 未熔解 0.78* 軟化點 (°c) 00 Ό 00 v〇 * iT) 00 CN 區分 r-H CN Η <Ν cn 寸 in 本發 明例 ：Η 鎰冢-12- (10) 200533728 I Results peelability ◎ ◎ ◎ ◎ ◎ 1 ◎ 丨 etchability ◎ XXXX 1 X Coating properties ◎ ○ ◎ ◎ ◎ X ◎ Composition (% by mass) Terpene phenol 1 1 1 1 1 o 1 orbital nonionic surfactant < 1.0 1 < 1.0 1 1 1 1 1 mineral 鱲 1 1 1 1 1 1 1 1 honey 鱲 1 1 1 1 1 1 1 higher fatty acid Ό CN 37 ** 37 * * 36 **-** j 1 42 ** Acid modified rosin 00 < N 1 14 ** -1 70 ** 42 ** Rosin 〇On 30 ** 16 ** Viscosity (Pa · S) 100 ° C 0.39! 0.34 0.06 0.07 0.07 0.26 0.52 * 0.22 80 ° C 2.12 1.72 0.14 * 0.10 * 0.20 * 1.10 * Unmelted 0.78 * Softening point (° c) 00 Ό 00 v〇 * iT) 00 CN Differentiate rH CN Η < Ν cn inch in Example of the invention:
-13- 200533728 (11) 如表1所示，本發明例1及2係在8 01之黏度、在 1 〇〇 °c之黏度及軟化點均在本發明所規定之範圍內，塗佈 性、蝕刻性、及剝離性之性能均良好。在本發明例2，於 蝕刻等，會產生不會造成問題程度之塗佈不均，但本發明 例1係其組成位於申請專利範圍第2項所規定之範圍內， 在塗佈性，顯示較本發明例2更優良之性能。 相對於此，在比較例1〜4及6，在8 0。(：之黏度過低 ，當進行蝕刻時’蠟由黏合面滲出。又，比較例5係即使 在8 0 °C也不會熔解，無法進行蠟之塗佈，因此中止了實驗 〔產業上之利用可能性〕 本發明之蠟係在不會對於形成於半導體晶圓上之光阻 劑膜產生壞影響之Π 0 °C以下的黏合溫度下，容易流動化 ，而在5 0〜7 0 °C之蝕刻溫度，不會產生流動化，在進行了 蝕刻後，能以1 05〜1 1 0°C之較低溫將半導體晶圓由保持基 板剝離。又，此蠟係能夠均等、其內部不會存在有氣泡、 且極薄之層厚度塗佈於保持基板。因此，在半導體晶圓能 夠尺寸精度極爲良好地進行蝕刻。又，此蠟係比起以往所 使用的熱傳導滑脂廉價，並且也不會造成在半導體晶圓的 背面產生污染。 【圖式簡單說明】 圖1係顯示以往使用網板印刷之暫時接著方法的圖， -14- 200533728 (12) (a )爲顯示將接合劑塗佈至保持基板之塗佈方法，（b ) 爲顯示保持基板與半導體晶圓之暫時接著的過程，（c ) 爲顯示黏合這些之後的狀態。 圖2係顯示能夠使用本發明之蠟的被蝕刻材之製造裝 置之圖。 圖3係顯示旋轉手段之動作狀態的圖。-13- 200533728 (11) As shown in Table 1, Examples 1 and 2 of the present invention have a viscosity of 8 01, a viscosity of 100 ° C and a softening point within the range specified in the present invention. , Etching, and peeling properties are good. In Example 2 of the present invention, coating unevenness will occur to the extent that it does not cause a problem in etching or the like. However, Example 1 of the present invention has a composition within the range specified in the second patent application range. Better performance than Example 2 of the present invention. On the other hand, in Comparative Examples 1 to 4, and 6, it was 80. (: The viscosity is too low, and the wax oozed out of the bonding surface when etching was performed. In addition, Comparative Example 5 did not melt even at 80 ° C, and was unable to coat the wax, so the experiment was suspended [industrial Possibility of use] The wax of the present invention is easy to flow at a bonding temperature of Π 0 ° C or less, which does not adversely affect the photoresist film formed on a semiconductor wafer, and is 50 to 70 ° The etching temperature of C does not cause fluidization. After the etching, the semiconductor wafer can be peeled from the holding substrate at a low temperature of 105 to 110 ° C. In addition, the wax can be uniform, and the interior is not There are bubbles, and a very thin layer thickness is applied to the holding substrate. Therefore, the semiconductor wafer can be etched with extremely good dimensional accuracy. In addition, this wax is cheaper than the conventional thermal conductive grease, and It will not cause contamination on the back of the semiconductor wafer. [Brief description of the figure] Figure 1 is a diagram showing a temporary bonding method using conventional screen printing. -14- 200533728 (12) (a) To the coating side of the holding substrate (B) shows the process of temporarily holding the substrate and the semiconductor wafer, and (c) shows the state after bonding these. Fig. 2 is a diagram showing a manufacturing apparatus of an etched material that can use the wax of the present invention. FIG. 3 is a diagram showing an operation state of the rotation means.
【主要元件符號說明】 1…保持基板 2…接合劑 3…網板 4…葉片 5…半導體晶圓 6…被蝕刻材之製造裝置 7…蠟 8…密閉容器 9 · 1、9 - 2…加熱器 1 0…塗佈片 1 1…管 12…支承構件 13…旋轉手段 14···棚架（booth) -15-[Description of main component symbols] 1 ... holding substrate 2 ... bonding agent 3 ... screen 4 ... blade 5 ... semiconductor wafer 6 ... production equipment for etching material 7 ... wax 8 ... closed container 9 · 1, 9-2 ... heating Device 1 0 ... coating sheet 1 1 ... tube 12 ... support member 13 ... rotation means 14 ... booth -15-