200533428 (1) 九、發明說明 【發明所屬之技術領域】 本發明是有關在將處理液塗佈於被處理基板上形成膜 時，可防止噴嘴前端部之處理液的著液不足，均一地塗佈 處理液於被處理基板之塗佈膜形成裝置及塗佈膜形成方法 Φ 【先前技術】 例如在LCD的製造中，在被處理基板的LCD基板形 成所定的膜之後，塗佈光阻劑液，而形成光阻劑膜，對應 於電路圖案來使光阻劑膜曝光，予以進行顯像處理，亦即 藉由所謂的光蝕刻微影技術來形成電路圖案。在此光蝕刻 微影技術中，被處理基板的LCD基板主要是經由洗淨處 理—^脫水烘烤—附著（a d h e s i ο η )(疏水化）處短—光阻劑 塗佈―^預烘烤—曝光—顯像—後烘烤之一連串的處理，在 φ 光阻劑層形成所定的電路圖案。 以往，這樣的處理是在搬送路的兩側考量製程的形態 下配置進行各處理的處理單元，藉由配置1個或複數個製 程區塊而成的處理系統來進行，該製程區塊是藉由可行走 於搬送路的中央搬送裝置來進行各處理單元之被處理基板 的搬出入。由於如此的處理系統基本上是隨機存取，因此 處理的自由度極高。 在如此的處理系統中，將光阻劑液塗佈於L C D基板 而形成光阻劑膜的方法，例如有使帶狀塗佈光阻劑液的光 -5- 200533428 (2) 阻劑供給噴嘴與L C D基板相對移動於與噴嘴噴出口的長 度方向正交的方向而進行塗佈的方法。此情況，在光阻劑 供給噴嘴設置具有延伸於基板的寬度方向的微小間隙之縫 隙狀噴出口，將由此縫隙狀噴出口所帶狀噴出的光阻劑液 予以供給至基板的表面全體，藉此來形成光阻劑膜。 若利用此方法，則可從基板一邊到另一邊帶狀噴出（ 供給）光阻劑液，因此可在不浪費光阻劑液的情況下，於 g 角型基板的全面平均形成光阻劑膜。有關採用如此塗佈膜 形成方法的塗佈膜形成裝置，如專利文獻1 (日本特開平 1 0- 1 5 625 5號公報）所揭示。 〔專利文獻1〕日本特開平1 0- 1 5 625 5號公報（第3 頁右欄第5行乃至第4頁左欄第6行，第1圖） 由於上述塗佈膜形成方法在塗佈處理中自噴嘴噴出的 光阻劑液會附著於噴出口周邊，因此在塗佈處理後，光阻 劑液會在不均一的狀態下附著於噴出口周邊全體。亦即， φ 若在此狀態下進行下次的塗佈處理，則來自噴出口之光阻 劑液的噴出會凌亂，無法對基板面進行均一的塗佈處理。 爲了規避此問題，以往是如圖1 3所示，在待機中， 接近使噴嘴201旋轉的打底滾輪202，將所定量的光阻劑 液R噴出至打底滾輪202的周面，藉此來使附著於噴嘴前 端的光阻劑液R均一化（以下稱爲打底（priming)處理 )。並且，在圖1 3所示的以往例中，爲了容易去除附著 於打底滾輪202周面的光阻劑液，而使打底滾輪202的下 部浸漬於溶劑的稀釋劑204中。亦即，使附著於該打底滾 200533428 (3) 輪2 0 2周面的光阻劑液溶解於稀釋劑2 〇 4中。而且，在此 構成中’使固定式的刷件2 0 3安裝於打底滾輪2 〇 2的周面 ，去除附著於打底滾輪202的多餘光阻劑液r。 【發明內容】 (發明所欲解決的課題） 圖1 4是表示由寬度側來看圖1 3所示的噴嘴2 0 1前端 ϋ 的擴大剖面圖。上述噴嘴2 0 1的前端部是由其寬度側來看 時呈錐狀，沿著噴嘴寬度方向在噴出口 201a的前後分別 形成有下端面201b及傾斜面201c。 如圖示，在打底處理中，由噴出口 201a來對旋轉的 打底滾輪202的周面噴出光阻劑液R。此刻，由於光阻劑 液R是沿著打底滾輪202的旋轉方向來流動，因此在噴嘴 前端部，如圖示，滾輪旋轉方向側的下端面2 0 1 b及傾斜 面20 1 c的一部份會因爲光阻劑液R而呈浸溼的狀態（附 φ 著有光阻劑液R的狀態）。 以往的打底處理中，打底滾輪202的旋轉開始的時間 與來自噴嘴2 0 1的光阻劑液R的噴出時間會大致同時。此 情況，自噴嘴201噴出的光阻劑液R會馬上由打底滾輪 2 02所捲取。此刻，如圖1 5的噴嘴長度側的擴大圖所示’ 會因爲往噴嘴前端部之光阻劑液的著液不足’ # ^ #傾 斜面20 1 c的下部產生被光阻劑液R所浸淫的部份及未浸 溼的部份。 在此打底處理後，如圖1 6所示，對基板G塗佈光阻 200533428 (4) 劑液R時，附著於傾斜面201 c的光阻劑液R會將自噴出 口 2 0 1 a噴出的光阻劑液r牽引至噴嘴行進方向的相反方 向，且也會牽引至與噴嘴行進方向呈正交方向（噴嘴長度 方向）。 亦即’若在圖1 5所示噴嘴前端的狀態下對基板g塗 佈處理光阻劑液R，則因爲附著於傾斜面2 0 1 c的光阻劑 液R會牽引自噴出口 2 0 1 a噴出的光阻劑液R，所以只有 φ 該部份的膜厚會變厚。因此，塗佈開始位置的光阻劑膜厚 會形成不均一 ’如圖1 7所示，會有產生掃帚狀條紋l等 的問題。 有鑑於上述情事，本發明的目的是在於提供一種在將 處理液塗佈於被處理基板上形成膜時，可防止噴嘴前端部 之處理液的著液不足，均一地塗佈處理液於被處理基板之 塗佈膜形成裝置及塗佈膜形成方法。 φ (用以解決課題的手段） 爲了解決上述課題，本發明之塗佈膜形成裝置的特徵 係具備： 處理液供給噴嘴，其係具有延伸於被處理基板的寬度 方向之縫隙狀的噴出口； 噴出控制手段，其係控制來自上述處理液供給噴嘴的 處理液噴出； 滾輪，其係設置於上述處理液供給噴嘴的待機位置， 形成旋轉自由；及 -8 - 200533428 (5) 滾輪旋轉控制手段，其係控制上述滾輪的旋轉； 使處理液由上述噴出口來噴出至上述滾輪的周面，且 藉由旋轉上述滾輪來使附著於上述噴出口的處理液進行均 一化處理， 在上述待機位置，上述噴出控制手段會使所定量的處 理液由處理液供給噴嘴噴出後，隔一所定時間，上述滾輪 旋轉控制手段開始旋轉上述滾輪。 ϋ 若利用此構成，則可控制成自處理液供給噴嘴開始噴 出處理液之後，隔一所定時間，開始旋轉滾輪。藉此，可 形成處理液滯留於噴出口周邊的狀態，使充分量的處理液 附著於噴出口周邊。 而且，在打底處理後，利用此處理液供給噴嘴來對被 處理基板進行塗佈處理時，由於在噴出口周邊附著有伺樣 充分的處理液，因此可在塗佈開始位置使膜厚形成均一， 進而能夠抑止掃帚狀條紋的發生等。 φ 又，最好更具備一噴嘴移動手段，其係使上述處理液 供給噴嘴對被處理基板移動， 在上述處理液供給噴嘴的待機位置，上述滾輪旋轉控 制手段係上述滾輪旋轉於一方向，而使附著於上述處理液 供給噴嘴的噴出口的處理液能夠以上述噴出口的長度方向 爲境界來大多附著於一方側， 且在上述處理液供給噴嘴的使用位置，上述噴嘴移動 手段係以上述噴出口的長度方向爲境界，以處理液附著少 的一側爲行進方向來使處理液供給噴嘴移動。 200533428 (6) 若利用此構成，則可在打底處理後，至少於滾輪的旋 轉方向側同樣地使充分的處理液附著於噴出口周邊。又， 若利用上述構成，則在開始對被處理基板塗佈時，其同樣 且充分附著的處理液會將自噴出口噴出的處理液予以均一 地牽引至噴嘴行進方向的相反方向，且亦均一地牽引至與 噴嘴行進方向正交的方向（噴嘴長度方向）。且結果，在 塗佈開始位置，可更確實地使膜厚形成均一，進而能夠抑 g 止掃帚狀條紋的發生等。 又，亦可在上述待機位置，來自處理液供給噴嘴之處 理液的噴出終了後，上述滾輪旋轉控制手段會使上述滾輪 的旋轉開始。 又，爲了解決上述課題，本發明的塗佈膜形成方法， 係從具有延伸於被處理基板的寬度方向之縫隙狀的噴出口 的處理液供給噴嘴來使所定量的處理液噴出至形成旋轉自 由的滾輪的周面，且藉由旋轉上述滾輪來使附著於上述噴 φ 出口的處理液進行均一化處理， 其特徵爲包含： 在上述處理液供給噴嘴的待機位置，使處理液由上述 處理液供給噴嘴噴出開始後，隔一所定時間，使上述滾輪 旋轉開始之步驟；及 使上述處理液供給噴嘴從待機位置移動至被處理基板 上，藉由從上述處理液供給噴嘴所噴出的處理液來成膜於 上述被處理基板之步驟。 若利用此構成，則可控制成自處理液供給噴嘴開始噴 -10- 200533428 (7) 出處理液之後，隔一所定時間，開始旋轉滾輪。藉此，可 形成處理液滯留於噴出口周邊的狀態，使充分量的處理液 附著於噴出口周邊。 而且，在打底處理後，利用此處理液供給噴嘴來對被 處理基板進行塗佈處理時，由於在噴出口周邊附著有同樣 充分的處理液，因此可在塗佈開始位置使膜厚形成均一， 進而能夠抑止掃帚狀條紋的發生等。 g 又，在上述處理液供給噴嘴的待機位置，使上述滾輪 旋轉於一方向，而使處理液以上述噴出口的長度方向爲境 界來大多附著於一方側， 且在上述處理液供給噴嘴的使用位置，以上述噴出口 的長度方向爲境界，以處理液附著少的一側爲處理液供給 噴嘴的行進方向。 若利用此構成，則可在噴出口周邊，至少於滾輪的旋 轉方向側同樣地使充分的處理液附著。而且，在開始對被 φ 處理基板塗佈時，其同樣且充分附著的處理液會將自噴出 口噴出的處理液予以均一地牽引至噴嘴行進方向的相反方 向，且亦均一地牽引至與噴嘴行進方向正交的方向（噴嘴 長度方向）。且結果，在塗佈開始位置，可更確實地使膜 厚形成均一，進而能夠抑止掃帚狀條紋的發生等。 又，可包含： 在上述處理液供給噴嘴的待機位置，使處理液由上述 處理液供給噴嘴噴出開始後，隔一所定時間，使上述滾輪 旋轉開始之步驟； -11 - 200533428 (8) 使處理液由上述處理液供給噴嘴噴出開始之步驟；及 上述處理液的噴出終了後，使上述滾輪的旋轉開始之 步驟。 〔發明的效果〕 若利用本發明，則可提供一種在將處理液塗佈於被處 理基板上形成膜時，可防止噴嘴前端部之處理液的著液不 足’均一地塗佈處理液於被處理基板之塗佈膜形成裝置及 塗佈膜形成方法。 【實施方式】 以下，根據圖面來說明本發明的實施形態。圖1是表 示具備本發明的塗佈膜形成裝置（光阻劑塗佈裝置）之光 阻劑塗佈顯像處理裝置的全體構成平面圖。 此光阻劑塗佈顯像處理裝置1 00具備： 卡匣站1，其係載置複數個卡匣C，該等卡匣C係收 容被處理基板，亦即複數個LCD基板G (以下稱爲基板G )； 處理站2，其係具備複數各個處理單元，該等處理單 元係對基板G實施包含處理液（光阻劑液）的塗佈及顯像 之一連串的處理；及 接口站3，其係供以和曝光裝置4之間進行基板G的 傳遞。 並且，在上述處理站2的兩端分別配置有上述卡匣站 -12- 200533428 Ο) 1及接口站3。而且，在圖1中’以光阻劑塗佈顯像處理 裝置1〇〇的長度方向作爲□方向’以平面上與X方向正交 @方向作爲Y方向。 卡匣站1具備：供以在卡匣c與處理站2之間進行基 板G的搬出入之搬送裝置11。此搬送裝置11具有搬送手 臂1 1 a，可移動於沿著卡匣C的配列方向之Y方向而設置 之搬送路10上，藉由搬送手臂在卡匣C與處理站2 B 之間進行基板G的搬出入。 處理站2具有延伸於X方向之基板G搬送用的平行2 列的搬送線A，B，且沿著搬送線A從卡匣站1側往接口 站3來配列有洗滌洗浄處理單元（SCR) 21，第1熱處理 蓽元部份26，光阻劑處理單元23及第2熱處理單元部份 27的一部份。 此外，在洗滌洗浄處理單元（SCR ) 2 1上的一部份設 有準分子UV照射單元（e-UV ) 22。 ® 另外，沿著搬送線B從接口站3側往卡匣站1來配列 有第2熱處理單元部份27的一部份，顯像處理單元（ DEV) 24，i線UV照射單元（i-UV) 25及第3熱處理單 元28。 再者，於處理站2中，如構成上述2列的搬送線A， B所示，且以基本上能夠形成處理的順序之方式，配置各 處理單元及搬送裝置，且於該等搬送線A，B之間設有空 間部4 0。而且，設有可使該空間部4 0往復移動的梭子4 1 。此梭子41可保持基板G，基板G可於搬送線A，B之 -13- 200533428 (10) 間傳遞。 又’接口站3具有：在處理站2與曝光裝置4之間進 行基板G的搬出入之搬送裝置42，及配置緩衝卡匣的緩 衝平台（BUF ) 43 ’以及具備冷卻機能的基板傳遞部之延 長冷卻台（EXT COL) 44。又，上下層疊序號機（ TITLER )與周邊曝光裝置（EE )的外部裝置區塊45會鄰 設於搬送裝置42。並且，搬送裝置42具備搬送手臂42a φ ，藉此搬送手臂42a在處理站2與曝光裝置4之間進行基 板G的搬出入。 在如此構成的光阻劑塗佈顯像裝置1 00中，首先，配 置於卡匣站1的卡匣C内之基板G會在藉由搬送裝置11 來搬入處理站2之後，首先進行準分子UV照射單元（e-UV ) 22之洗滌前處理，及洗滌洗浄處理單元（SCR ) 21 之洗滌洗浄處理。 其次，基板G會被搬入第1熱處理單元部份26所屬 φ 的熱處理單元區塊（TB) 31，32，進行一連串的熱處理（ 脫水烘烤處理，疏水化處理等）。並且，第1熱處理單元 部份26内的基板搬送是藉由搬送裝置33來進行。 然後，基板G會被搬入光阻劑塗佈處理單元2 3，施 以光阻劑液的膜形成處理。此光阻劑塗佈處理單元23是 首先在光阻劑塗佈裝置（CT ) 23a中對基板G塗佈光阻劑 液，其次在減壓乾燥單元（VD) 23 b中進行減壓乾燥處理 〇 此光阻劑塗佈處理單元23是包含作爲本發明的塗佈 -14- 200533428 (11) 月吴形成裝置之光阻劑塗佈裝置（C T ) 2 3 a的單元，詳細如 後述。 在上述光阻劑塗佈處理單元2 3的光阻劑成膜處理後 ，基板G是被搬入第2熱處理單元部份27所属的熱處理 單元區塊（TB ) 3 4，3 5，進行一連串的熱處理（預烘烤處 理等）。並且’第2熱處理單元部份27内的基板搬送是 藉由搬送裝置36來進行。 g 其次，基板G是藉由搬送裝置36來搬送至接口站3 的延長冷卻台（EXT COL) 44，且藉由搬送裝置42來搬 送至外部裝置區塊45的周邊曝光裝置（EE)。在此，對 基板G進行供以去除周邊光阻劑的曝光，其次藉由搬送裝 置42來搬送至曝光裝置4，基板G上的光阻劑膜會被曝 光而形成所定的圖案。並且，依情況，在緩衝平台（BUF )43上的緩衝卡匣收容基板G之後搬送至曝光裝置4。 曝光終了後，基板G會藉由接口站3的搬送裝置42 φ 來搬送至外部裝置區塊45的上段的序號機（TITLER)， 對基板G記上所定的資訊。然後，基板G會被載置於延 長冷卻台（EXT COL ) 44，由此再度被搬送至處理站2。 然後，例如藉由滾輪搬送機構來將基板G搬送至顯像處理 單元（PEV ) 24，於此施以顯像處理。 顯像處理終了後，基板G會從顯像處理單元（DEV ) 24來搬入i線UV照射單元（i-UV ) 25，對基板G施以脫 色處理。然後，基板G會被搬入第3熱處理單元部份28 ，在熱處理單元區塊（TB) 37，38中施以一連串的熱處 -15- 200533428 (12) 理（後烘烤處理等）。並且，第3熱處理單元部 的基板搬送是藉由搬送裝置39來進行。 而且，基板G會在第3熱處理單元部份28 所定温度之後，藉由卡匣站1的搬送裝置1 1來 定的卡匣C。 其次，根據圖2來説明有關光阻劑塗佈處理 圖2是表示構成光阻劑塗佈處理單元2 3的光阻 φ 置（CT) 23a，及減壓乾燥單元（VD) 23b的平 等光阻劑塗佈裝置（CT ) 2 3 a，減壓乾燥單元（ 是在支持台60上按照處理步驟的順序來配置成 在支持台60的兩側鋪設有一對的導軌62，可藉 導軌62而平行移動的一組或複數組搬送手臂64 理基板G於單元間。 圖2所示的減壓乾燥單元（VD ) 23b具有： 口的托盤或底淺容器型的下部處理室66，及可氣 φ 崁合於該下部處理室66的上面而構成之蓋狀的 室（未圖示）。下部處理室66爲略四角形，在 置有供以水平載置支持基板G的平台70，在底 落設有排氣口 72。並且，連接於各排氣口 72的 未圖示）會通往真空泵（未圖示）。而且，可在 部處理室覆蓋於下部處理室66的狀態下，藉由 來使兩處理室内的處理空間減壓至所定的真空度 如此構成的減壓乾燥單元（V D ) 2 3 b是針對 佈裝置（C T ) 2 3 a中被塗佈光阻劑液的基板G施 Η分2 8内 被冷卻至 收容至所 單元23。 劑塗佈裝 面圖。該 VD ) 23b 橫一列。 由沿著該 來直接處 上面呈開 密接合或 上部處理 中心部配 面的四角 排氣管（ 使上述上 該真空泵 〇 光阻劑塗 以不依靠 -16- 200533428 (13) 加熱的減壓乾燥。亦即，減壓乾燥時，光阻劑中的溶劑會 慢慢地被放出，不會產生加熱乾燥時那樣的急速乾燥，因 此該減壓乾燥單元（V D ) 2 3 b可在不對光阻劑造成不良影 響的情況下促進光阻劑的乾燥。 又，根據圖2 ’圖3來詳細説明有關光阻劑塗佈裝置 (CT) 23a。 圖3是表示光阻劑塗佈裝置（CT) 23a的外觀立體圖 。如圖示，該光阻劑塗佈裝置（CT) 23a具備：使基板G 保持水平之水平移動可能的保持手段的載置台5 0，及配設 於該載置台5 0上方的光阻劑供給噴嘴（處理液供給噴嘴 )5 1，及使該光阻劑供給墳嘴5 1 (以下稱爲噴嘴5 1 )水 平移動的噴嘴移動手段86。 在此構成中，藉由噴嘴移動手段86來水平移動噴嘴 5 1，藉此使載置台50上的基板G與噴嘴5 1能夠相對水平 移動。 並且，在載置台50之噴嘴51的移動方向的一端部設 有待機部5 5，該待機部5 5具有：供以使待機時附著於噴 嘴5 1的前端的光阻劑液均一化之可旋轉自由的打底滾輪 (滾輪）52，及使該打底滾輪52浸漬於稀釋劑的容器53 〇 上述噴嘴5 1具有：延伸於基板G的寬度方向之縫隙 狀的噴出口 5 1 a，及連通於該噴出口 5 1 a的光阻劑液収容 室（未圖示），且經由連接於該光阻劑液収容室的光阻劑 液供給管道5 7來連接光阻劑液供給源9 5。並且，噴嘴5 1 -17- 200533428 (14) 的前端部，由其寬度側來看呈錐狀，沿著噴嘴寬度方向在 噴出口 5 1 a的前後分別形成有下端面5 1 b及傾斜面5 1 c。 此外，在噴出口 5 1 a的長度方向的兩側設有降低從該 噴出口 5 1 a噴出的光阻劑液R的噴出壓之膜厚控制手段 80。此膜厚控制手段80是由分別連接於連通至噴出口 51a 的長度方向的兩側的連通路8 1之吸引管8 2，及設置於吸 引管82之例如隔膜泵之類的吸引泵83所構成，藉由吸引 φ 泵8 3的驅動來降低噴出口 5 1 a的兩側的噴出壓。並且， 吸引管82之吸引泵83的吸引側亦即噴嘴51側介設一開 閉閥84。 其次，說明有關上述構成的光阻劑塗佈裝置（CT ) 23 a之光阻劑液塗佈處理時的動作形態。首先，在使噴嘴 51接近待機部55的打底滾輪52之狀態下，將藉由搬送手 臂64而搬送的基板G予以吸著保持於載置台50上。其次 ，從光阻劑液供給源95供給光阻劑液R至噴嘴5 1内的光 φ 阻劑液収容室，且藉由噴嘴移動手段8 6來使噴嘴5 1從待 機部55移動至基板G上。 其次，噴嘴51會一邊從噴出口 5 1 a來噴出光阻劑液 R，一邊移動於基板G上。並且，在圖3中，爲了說明其 構成，而擴大圖示噴出口 51a與基板G間的距離，實際上 噴出口 51a與基板G的距離是設置成40〜150 μιη的程度 ，較理想爲設定成60μηι。 此刻，驅動吸引泵83來吸引噴出口 5 1 a的長度方向 的兩側，藉此噴出口 5 1 a的兩側之光阻劑液R的噴出壓會 -18- 200533428 (15) 減少，在噴出口 5 1 a的中央部側的噴出壓與兩側的噴出壓 會大致成相等的狀態下’亦即光阻劑液R的液厚成相等的 狀態下，帶狀噴出（供給）於基板G上。因此，可藉由基 板G與噴嘴5 1的相對水平移動，在基板G的表面上帶狀 供給光阻劑液R，而使於基板G的表面全體形成均一膜厚 的光阻劑膜。 如此，在基板G表面形成光阻劑膜之後，停止光阻劑 φ 液R的供給，且將噴嘴5 1移動至待機位置，使噴嘴5 1的 噴出口 5 1 a接近待機部5 5内的打底滾輪5 2，而執行其次 的塗佈處理。並且，形成有光阻劑膜的基板G會藉由搬送 手臂64來從載置台50搬送至減壓乾燥單元（VD) 23b。 接著，根據圖4乃至圖6來説明有關在光阻劑塗佈裝 置（CT) 23a中，當噴嘴51位於待機位置時的動作。圖4 是表示光阻劑塗佈裝置（CT) 23a之待機狀態的機能構成 的方塊圖。圖5是用以說明附著於噴嘴5 1前端的光阻劑 φ 液的均一化處理（打底處理）步驟。圖6是表示圖5的步 驟流程。 在圖4中，在基板G的光阻劑膜形成後，藉由全體控 制部8 5來控制噴嘴移動手段8 6，完成塗佈操作的噴嘴5 1 會從使用位置移動至待機位置a，執行次回的塗佈。在此 待機位置a設有由光感測器所構成的待機位置檢測器8 7， 當噴嘴5 1位於待機位置a時，其待機位置檢測信號P1會 產生，且被輸入全體控制部85。 亦即，在被輸入上述待機位置檢測信號P1的期間， -19- 200533428 (16) 全體控制部8 5會判斷噴嘴5 1位於待機位置a，適 行待機狀態之光阻劑塗佈裝置（C T ) 2 3 a的動作控启 當噴嘴5 1位於待機位置a時，噴嘴前端會接 滾輪5 2的周面而配置（圖6的步驟S1 )。噴嘴前 出口 5 1 a與打底滾輪5 2的距離是設定成和塗佈處 噴出口 5 1 a與基板G的距離相同。亦即，其距離是 40〜150μπι的程度，較理想是設定成60μιη。 φ 又，光阻劑液供給源95的噴出控制手段（例 操作閥等）8 8會根據來自全體控制部8 5的指示而 如圖5 ( a )所示，從噴嘴5 1的噴出口 5 1 a來對打 52的周面噴出（例如0.1 cc的光阻劑液R會以 0.05 sec的時間來噴出）所定量的光阻劑液R (例 4cps)。此刻，打底滾輪52還是旋轉停止狀態（S 步驟S2 )。 在此，由於從噴出口 5 1 a噴出的光阻劑液R會 φ 打底滾輪5 2的周面上，因此噴嘴5 1前端會形成一 於光阻劑液R中的狀態，在傾斜面5 1 c的下部，光 R會例如以1〇〜20 μπι的高度來充分地附著於全體。 其次，自噴嘴5 1開始噴出光阻劑液後，若經 時間Τ (圖6的步驟S3 )，則如圖5 ( b )所示， 輪52會藉由滾輪旋轉控制手段92開始旋轉於一方 如，滾輪直徑90mm，速度60mm/sec )，使附著於 5 1 a周邊的光阻劑液R形成均一（圖6的步驟S 4 ) 在此，由於從噴嘴5 1的噴出口 5 1 a噴出的光 當地進 近打底 端的噴 理時之 設定成 如氣體 開放， 底滾輪 0.03 〜 如黏度 B 6的 滯留於 時浸漬 阻劑液 過所定 打底滾 向（例 噴出口 〇 阻劑液 -20-200533428 (1) IX. Description of the invention [Technical field to which the invention belongs] The present invention relates to the application of a treatment liquid on a substrate to be processed to form a film. Coating film forming device and method for forming coating solution on substrate to be processed Φ [Prior art] For example, in the manufacture of LCD, after a predetermined film is formed on the LCD substrate of the substrate to be processed, a photoresist liquid is applied To form a photoresist film, the photoresist film is exposed in accordance with the circuit pattern and subjected to development processing, that is, a circuit pattern is formed by a so-called photolithography technique. In this photoetching lithography technology, the LCD substrate of the substrate to be processed is mainly subjected to a cleaning process— ^ dehydration baking—adhesi ο η (hydrophobization) at a short-photoresist coating— ^ pre-baking —Exposure—Development—A series of post-baking processes to form a predetermined circuit pattern on the φ photoresist layer. In the past, such processing has been performed by processing units configured with processes in consideration of processes on both sides of the transport path, and is performed by a processing system configured with one or a plurality of process blocks. The process blocks are borrowed The central transfer device that can walk on the transfer path carries in and out of the substrate to be processed in each processing unit. Since such a processing system is basically random access, the degree of freedom in processing is extremely high. In such a processing system, a method of forming a photoresist film by applying a photoresist liquid to an LCD substrate includes, for example, applying a photoresist liquid in a strip shape to a photo-5- 200533428 (2) a resist supply nozzle A method in which coating is performed by moving relative to the LCD substrate in a direction orthogonal to the longitudinal direction of the nozzle discharge port. In this case, a slit-shaped ejection port having a minute gap extending in the width direction of the substrate is provided in the photoresist supply nozzle, and the photoresist liquid ejected from the slit-shaped ejection port is supplied to the entire surface of the substrate. This forms a photoresist film. If this method is used, the photoresist liquid can be ejected (supplied) from one side of the substrate to the other, so the photoresist film can be formed on the entire surface of the g-angle substrate without wasting the photoresist liquid. . A coating film forming apparatus using such a coating film forming method is disclosed in Patent Document 1 (Japanese Patent Application Laid-Open No. 10-1-562525). [Patent Document 1] Japanese Patent Application Laid-Open No. 1 0- 1 5 625 5 (5th row in the right column on the third page, and 6th row in the left column on the 4th page, Figure 1) The photoresist liquid sprayed from the nozzle during the process adheres to the periphery of the ejection port. Therefore, after the coating process, the photoresist liquid adheres to the entire periphery of the ejection port in a non-uniform state. In other words, if the next coating process is performed in this state, the discharge of the photoresist liquid from the discharge port will be disordered, and a uniform coating process cannot be performed on the substrate surface. In order to avoid this problem, as shown in FIG. 13 in the past, in the standby mode, the bottom roller 202 that rotates the nozzle 201 is approached, and a predetermined amount of the photoresist liquid R is ejected to the peripheral surface of the bottom roller 202. The photoresist liquid R attached to the front end of the nozzle is made uniform (hereinafter referred to as a priming process). Further, in the conventional example shown in Fig. 13, in order to easily remove the photoresist liquid adhering to the peripheral surface of the primer roller 202, the lower portion of the primer roller 202 is immersed in the solvent diluent 204. That is, the photoresist solution adhered to the peripheral surface of the primer roll 200533428 (3) wheel 202 was dissolved in the diluent 204. Furthermore, in this configuration, a fixed brush member 203 is mounted on the peripheral surface of the primer roller 202, and the excess resist liquid r attached to the primer roller 202 is removed. [Summary of the Invention] (Problems to be Solved by the Invention) FIG. 14 is an enlarged cross-sectional view showing the front end ϋ of the nozzle 201 shown in FIG. 13 as viewed from the width side. The front end portion of the nozzle 201 is tapered when viewed from the width side, and a lower end surface 201b and an inclined surface 201c are formed in front of and behind the discharge port 201a along the nozzle width direction, respectively. As shown in the figure, in the priming process, the photoresist liquid R is sprayed onto the peripheral surface of the rotating priming roller 202 from the discharge port 201a. At this moment, the photoresist liquid R flows along the rotation direction of the bottom roller 202. Therefore, at the front end portion of the nozzle, as shown in the figure, one of the lower end surface 2 0 b of the roller rotation direction side and the inclined surface 20 1 c Part of the photoresist liquid R will be wet (with the photoresist liquid R attached). In the conventional priming process, the start time of the rotation of the priming roller 202 and the ejection time of the photoresist liquid R from the nozzle 201 are approximately the same. In this case, the photoresist liquid R ejected from the nozzle 201 is immediately taken up by the priming roller 202. At this moment, as shown in the enlarged view of the nozzle length side in FIG. 15, 'the liquid injection of the photoresist liquid to the front end of the nozzle is insufficient' # ^ #The inclined surface 20 1 c is generated by the photoresist liquid R Soaked and unwetted parts. After this priming process, as shown in FIG. 16, when the photoresist 200533428 is applied to the substrate G (4) the agent liquid R, the photoresist liquid R attached to the inclined surface 201 c will self-eject 2 0 1 a The sprayed photoresist liquid r is drawn to the opposite direction of the nozzle traveling direction, and is also drawn to a direction orthogonal to the nozzle traveling direction (nozzle length direction). That is, 'if the photoresist liquid R is coated and processed on the substrate g in the state of the front end of the nozzle shown in FIG. 15, the photoresist liquid R adhered to the inclined surface 2 1 c will be pulled from the ejection outlet 2 0 1 The photoresist liquid R sprayed by a, so only the film thickness of the portion of φ becomes thicker. Therefore, the thickness of the photoresist film at the application start position becomes uneven, as shown in FIG. 17, and there is a problem that a broom-like streak 1 is generated. In view of the foregoing, an object of the present invention is to provide a method for preventing a shortage of the processing liquid in the front end portion of a nozzle when coating a processing liquid on a substrate to be processed to form a film, and to uniformly apply the processing liquid to the processing target. A coating film forming apparatus and a coating film forming method for a substrate. φ (means for solving the problem) In order to solve the above-mentioned problem, the coating film forming apparatus of the present invention is characterized by including: a processing liquid supply nozzle having a slit-shaped discharge port extending in a width direction of a substrate to be processed; The discharge control means controls the discharge of the processing liquid from the processing liquid supply nozzle; the roller is provided at the standby position of the processing liquid supply nozzle to form free rotation; and -8-200533428 (5) the rotation control method of the roller, It controls the rotation of the roller; the processing liquid is ejected from the discharge port to the peripheral surface of the roller, and the processing liquid attached to the discharge port is homogenized by rotating the roller, and in the standby position, The ejection control means causes the predetermined amount of processing liquid to be ejected from the processing liquid supply nozzle, and the roller rotation control means starts to rotate the roller at a predetermined time. ϋ With this configuration, it can be controlled to start rotating the roller at a predetermined time after the processing liquid supply nozzle starts to discharge the processing liquid. Thereby, a state in which the treatment liquid stays around the discharge port can be achieved, and a sufficient amount of the treatment liquid can adhere to the vicinity of the discharge port. In addition, when the substrate to be processed is coated with the processing liquid supply nozzle after the priming process, since a sufficient processing liquid is adhered to the periphery of the ejection port, the film thickness can be formed at the coating start position. The uniformity can further suppress the occurrence of broom-like streaks and the like. φ It is preferable to further include a nozzle moving means for moving the processing liquid supply nozzle to the substrate to be processed, and in a standby position of the processing liquid supply nozzle, the roller rotation control means rotates the roller in one direction, and The processing liquid attached to the discharge port of the processing liquid supply nozzle can be mostly attached to one side with the longitudinal direction of the discharge port as a boundary, and in the use position of the processing liquid supply nozzle, the nozzle moving means uses the spray The length direction of the outlet is the boundary, and the processing liquid supply nozzle is moved with the side where the processing liquid adheres little as the traveling direction. 200533428 (6) With this configuration, it is possible to make sufficient processing liquid adhere to the periphery of the ejection outlet at least on the rotation direction side of the roller after the priming process. In addition, if the above-mentioned configuration is used, when the substrate to be processed is started to be coated, the same and sufficiently adhered processing liquid will uniformly pull the processing liquid ejected from the ejection outlet to the direction opposite to the traveling direction of the nozzle, and also uniform Draw to the direction orthogonal to the nozzle travel direction (nozzle length direction). As a result, it is possible to more uniformly form the film thickness at the application start position, and to suppress the occurrence of broom-like streaks and the like. Alternatively, the roller rotation control means may start the rotation of the roller after the discharge of the physical liquid from the processing liquid supply nozzle is completed at the standby position. In order to solve the above-mentioned problem, the coating film forming method of the present invention is a method in which a predetermined amount of processing liquid is discharged from a processing liquid supply nozzle having a slit-shaped discharge port extending in a width direction of a substrate to be processed to be freely rotated. The peripheral surface of the roller and rotating the roller to homogenize the processing liquid attached to the spray φ outlet are characterized in that: the processing liquid is supplied from the processing liquid to the standby position of the processing liquid supply nozzle at a standby position of the processing liquid supply nozzle. A step of starting the rotation of the roller at a predetermined time after the ejection of the supply nozzle is started; and moving the processing liquid supply nozzle from the standby position to the substrate to be processed, and the processing liquid ejected from the processing liquid supply nozzle is used to Forming a film on the substrate to be processed; With this configuration, it can be controlled to start spraying from the processing liquid supply nozzle -10- 200533428 (7) After the processing liquid is discharged, the roller is rotated at a predetermined time. Thereby, a state in which the treatment liquid stays around the discharge port can be achieved, and a sufficient amount of the treatment liquid can adhere to the vicinity of the discharge port. In addition, when the substrate to be processed is coated with the processing liquid supply nozzle after the priming process, the same sufficient processing liquid is adhered to the periphery of the ejection port, so that the film thickness can be uniformly formed at the coating start position. In addition, the occurrence of broom-like streaks can be suppressed. g In the standby position of the processing liquid supply nozzle, the roller is rotated in one direction, and the processing liquid is mostly attached to one side with the longitudinal direction of the discharge port as a boundary, and the processing liquid supply nozzle is used. The position is defined by the longitudinal direction of the ejection port as a boundary, and the side where the treatment liquid adheres little is the traveling direction of the treatment liquid supply nozzle. According to this configuration, a sufficient treatment liquid can be adhered to the periphery of the ejection outlet at least in the rotation direction side of the roller. In addition, when the substrate to be processed with φ is started to be coated, the same and sufficiently adhered processing liquid will uniformly pull the processing liquid ejected from the ejection outlet to the direction opposite to the nozzle traveling direction, and also uniformly to the nozzle traveling direction. Orientation direction (nozzle length direction). As a result, the film thickness can be more uniformly formed at the application start position, and the occurrence of broom-like streaks can be suppressed. In addition, the method may include: a step of causing the processing liquid to be discharged from the processing liquid supply nozzle at a standby position of the processing liquid supply nozzle to start the rotation of the roller at a predetermined time; -11-200533428 (8) enabling the processing A step of starting the discharge of the liquid from the processing liquid supply nozzle; and a step of starting the rotation of the roller after the discharge of the processing liquid is completed. [Effects of the Invention] According to the present invention, when a processing liquid is formed on a substrate to be processed and a film is formed, it is possible to prevent a shortage of the processing liquid of the processing liquid at the front end portion of the nozzle. A coating film forming apparatus and method for processing a substrate. [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a plan view showing the entire configuration of a photoresist coating development processing apparatus provided with a coating film forming apparatus (photoresist coating apparatus) of the present invention. This photoresist-coated development processing apparatus 100 includes: a cassette station 1 which houses a plurality of cassettes C, and the cassettes C house a substrate to be processed, that is, a plurality of LCD substrates G (hereinafter referred to as Is a substrate G); a processing station 2 having a plurality of processing units that performs a series of processing including coating and development of a processing liquid (photoresist liquid) on the substrate G; and an interface station 3 It is used to transfer the substrate G to and from the exposure device 4. In addition, the cassette station -12-200533428 0) 1 and the interface station 3 are arranged at both ends of the processing station 2 respectively. Further, in Fig. 1, "the longitudinal direction of the photoresist-coated development processing apparatus 100 is taken as the" direction ", and the plane orthogonal to the X direction is taken as the @ direction as the Y direction. The cassette station 1 includes a transfer device 11 for carrying in and out of the substrate G between the cassette c and the processing station 2. This conveying device 11 has a conveying arm 1 1 a, which can be moved on a conveying path 10 provided along the Y direction of the arrangement direction of the cassettes C, and the substrate is carried between the cassette C and the processing station 2 B by the conveying arm G's move in and out. The processing station 2 has two parallel rows of transfer lines A and B for substrate G transfer in the X direction, and a washing and cleaning processing unit (SCR) is arranged along the transfer line A from the cassette station 1 to the interface station 3. 21, the first heat treatment unit portion 26, the photoresist treatment unit 23, and a portion of the second heat treatment unit portion 27. In addition, an excimer UV irradiation unit (e-UV) 22 is provided on a part of the washing and cleaning processing unit (SCR) 21. ® In addition, along the transfer line B, from the interface station 3 to the cassette station 1, a second heat treatment unit 27, a development processing unit (DEV) 24, and an i-line UV irradiation unit (i- UV) 25 and third heat treatment unit 28. Furthermore, in the processing station 2, as shown in the above-mentioned two lines of the transfer lines A and B, each processing unit and the transfer device are arranged in a manner that can basically form a processing sequence, and the transfer lines A There is a space section 40 between B and B. In addition, a shuttle 41 is provided to allow the space portion 40 to reciprocate. This shuttle 41 can hold the substrate G, and the substrate G can be transferred between the transfer lines A and B -13- 200533428 (10). The interface station 3 includes a transfer device 42 for carrying substrates G in and out between the processing station 2 and the exposure device 4, a buffer platform (BUF) 43 provided with a buffer cassette, and a substrate transfer unit having a cooling function. Extended cooling table (EXT COL) 44. Further, the upper and lower serial numbering machines (TITLER) and the external device block 45 of the peripheral exposure device (EE) are adjacent to the conveying device 42. In addition, the conveying device 42 includes a conveying arm 42a φ, whereby the conveying arm 42a carries in and out the substrate G between the processing station 2 and the exposure device 4. In the photoresist-coated imaging device 100 configured as described above, first, the substrate G arranged in the cassette C of the cassette station 1 is carried into the processing station 2 by the transfer device 11, and then the excimer is first performed. UV washing unit (e-UV) 22 pre-washing treatment, and washing and washing processing unit (SCR) 21 washing and washing treatment. Next, the substrate G is transferred to the heat treatment unit block (TB) 31, 32 of φ to which the first heat treatment unit portion 26 belongs, and is subjected to a series of heat treatments (dehydration baking treatment, hydrophobic treatment, etc.). The substrate transfer in the first heat treatment unit section 26 is performed by a transfer device 33. Then, the substrate G is carried into a photoresist coating processing unit 23, and is subjected to a film forming treatment of a photoresist liquid. In this photoresist coating processing unit 23, a substrate G is first coated with a photoresist liquid in a photoresist coating device (CT) 23a, and then a reduced pressure drying process is performed in a reduced pressure drying unit (VD) 23b. This photoresist coating processing unit 23 is a unit including a photoresist coating device (CT) 2 3 a which is a coating device of the present invention, which is a coating device 14-200533428 (11), and the details will be described later. After the photoresist film-forming treatment of the photoresist coating processing unit 23, the substrate G is carried into the heat treatment unit block (TB) 3 4, 3 5 belonging to the second heat treatment unit section 27, and a series of Heat treatment (pre-baking treatment, etc.). The substrate transfer in the second heat treatment unit portion 27 is performed by the transfer device 36. g Next, the substrate G is conveyed to the extended cooling stage (EXT COL) 44 of the interface station 3 by the conveying device 36, and is conveyed to the peripheral exposure device (EE) of the external device block 45 by the conveying device 42. Here, the substrate G is subjected to exposure for removing peripheral photoresist, and is then conveyed to the exposure device 4 by the conveying device 42. The photoresist film on the substrate G is exposed to form a predetermined pattern. In addition, the buffer cassette housing substrate G on the buffer platform (BUF) 43 is transported to the exposure device 4 as appropriate. After the exposure is completed, the substrate G is transferred to the upper serial number machine (TITLER) of the external device block 45 by the transfer device 42 φ of the interface station 3, and the predetermined information is recorded on the substrate G. Then, the substrate G is placed on the extended cooling stage (EXT COL) 44 and is transferred to the processing station 2 again. Then, for example, the substrate G is transferred to a development processing unit (PEV) 24 by a roller transfer mechanism, and development processing is performed there. After the development process is completed, the substrate G is carried from the development processing unit (DEV) 24 into the i-ray UV irradiation unit (i-UV) 25, and the substrate G is subjected to a decoloring process. Then, the substrate G is moved into the third heat treatment unit section 28, and a series of heat treatments are performed in the heat treatment unit blocks (TB) 37, 38 -15- 200533428 (12) processing (post-baking treatment, etc.). The substrate transfer in the third heat treatment unit is performed by the transfer device 39. Then, the substrate G is subjected to the cassette C determined by the transport device 11 of the cassette station 1 after the temperature set by the third heat treatment unit portion 28. Next, the photoresist coating process will be described with reference to FIG. 2. FIG. 2 shows the equal photoresist (CT) 23a and the reduced pressure drying unit (VD) 23b constituting the photoresist coating processing unit 23. The resist coating device (CT) 2 3a, a reduced-pressure drying unit (is arranged on the support table 60 in the order of processing steps, and a pair of guide rails 62 are laid on both sides of the support table 60. A group or a complex array of moving arms 64 moves substrates G between the units. The reduced-pressure drying unit (VD) 23b shown in Fig. 2 has: a tray or a bottom-bottomed container-type lower processing chamber 66, and a gas-fillable unit. φ A lid-shaped chamber (not shown) formed by being coupled to the upper surface of the lower processing chamber 66. The lower processing chamber 66 is slightly rectangular, and a platform 70 for horizontally supporting the substrate G is placed on the bottom. An exhaust port 72 is provided. A vacuum pump (not shown) is connected to each exhaust port 72 (not shown). In addition, a vacuum drying unit (VD) 2 3 b configured in such a manner that the processing space in the two processing chambers can be decompressed to a predetermined degree of vacuum while the partial processing chamber is covered by the lower processing chamber 66 can be applied to the cloth device. (CT) The substrate G to which the photoresist solution is applied in 2 3 a is cooled to the storage unit 23 within 2 to 8 minutes. Agent coating surface. The VD) 23b is in a row. A four-corner exhaust pipe with an open-close joint or a central processing surface of the upper processing center directly along the top (the above-mentioned vacuum pump is coated with photoresist and dried under reduced pressure without relying on -16-200533428 (13) heating That is, when drying under reduced pressure, the solvent in the photoresist will be slowly released without rapid drying like heating drying, so the reduced pressure drying unit (VD) 2 3 b can The photoresist drying process is promoted when the additive has an adverse effect. The photoresist coating device (CT) 23a will be described in detail with reference to FIGS. 2 to 3. FIG. 3 shows the photoresist coating device (CT) An external perspective view of 23a. As shown in the figure, the photoresist coating device (CT) 23a includes a mounting table 50 which is a holding means capable of horizontally moving the substrate G, and is disposed above the mounting table 50. Photoresist supply nozzle (treatment liquid supply nozzle) 51, and nozzle moving means 86 for horizontally moving the photoresist supply nozzle 5 1 (hereinafter referred to as nozzle 51). In this configuration, the nozzle The moving means 86 moves the nozzle 5 1 horizontally, thereby making the load The substrate G on the stage 50 and the nozzle 51 can move relatively horizontally. Further, a standby portion 5 5 is provided at one end portion of the nozzle 51 in the moving direction of the mounting table 50, and the standby portion 55 has: The photoresist liquid at the front end of the nozzle 51 is uniformly rotatable and a bottoming roller (roller) 52 which can be rotated freely, and the container 53 in which the bottoming roller 52 is immersed in a diluent. A slit-shaped ejection opening 5 1 a in the width direction of G and a photoresist liquid storage chamber (not shown) communicating with the ejection opening 5 1 a, and a photoresist connected to the photoresist liquid storage chamber The agent liquid supply pipe 57 is connected to the photoresist liquid supply source 95. The front end of the nozzle 5 1 -17- 200533428 (14) is tapered when viewed from the width side, and is sprayed along the nozzle width direction. A lower end surface 5 1 b and an inclined surface 5 1 c are formed at the front and rear of the outlet 5 1 a, respectively. In addition, on both sides in the longitudinal direction of the ejection outlet 5 1 a, a photoresist for reducing the ejection from the ejection outlet 5 1 a is provided. The film thickness control means 80 of the liquid R discharge pressure. This film thickness control means 80 is connected to The suction pipe 8 2 of the communication path 8 1 on both sides in the longitudinal direction to the ejection port 51 a and a suction pump 83 such as a diaphragm pump provided in the suction pipe 82 are configured, and are driven by the suction φ pump 8 3 The ejection pressure on both sides of the ejection port 5 1 a is reduced. Further, an on-off valve 84 is provided on the suction side of the suction pump 83 of the suction pipe 82, that is, on the nozzle 51 side. Next, the photoresist coating device having the above-mentioned configuration will be described. (CT) Operation mode during photoresist solution coating process of 23a. First, the substrate G transferred by the transfer arm 64 is sucked while the nozzle 51 is brought close to the bottom roller 52 of the standby portion 55. It is held on the mounting table 50. Next, the photoresist liquid R is supplied from the photoresist liquid supply source 95 to the photoφ resist liquid storage chamber in the nozzle 51, and the nozzle 51 is moved from the standby portion 55 to the substrate by the nozzle moving means 86. G on. Next, the nozzle 51 moves on the substrate G while ejecting the photoresist liquid R from the ejection port 5 1 a. In addition, in FIG. 3, in order to explain the structure, the distance between the ejection port 51a and the substrate G shown in the figure is enlarged. Actually, the distance between the ejection port 51a and the substrate G is set to about 40 to 150 μm. Into 60μηι. At this moment, the suction pump 83 is driven to attract both sides in the longitudinal direction of the ejection port 5 1 a, whereby the ejection pressure of the photoresist liquid R on both sides of the ejection port 5 1 a is reduced by -18-200533428 (15). In the state where the discharge pressure on the central portion side of the discharge port 5 1 a and the discharge pressure on both sides are approximately equal, that is, in a state where the liquid thickness of the photoresist liquid R is equal, the tape is discharged (supplied) to the substrate G on. Therefore, by relatively horizontally moving the substrate G and the nozzle 51, the photoresist liquid R can be supplied in a strip shape on the surface of the substrate G, so that a uniform film thickness of the photoresist film can be formed on the entire surface of the substrate G. In this way, after the photoresist film is formed on the surface of the substrate G, the supply of the photoresist φ liquid R is stopped, and the nozzle 51 is moved to the standby position, so that the discharge port 5 1 a of the nozzle 51 is close to the inside of the standby portion 55. The priming roller 5 2 performs a subsequent coating process. The substrate G on which the photoresist film is formed is transferred from the mounting table 50 to the reduced-pressure drying unit (VD) 23b by a transfer arm 64. Next, the operation when the nozzle 51 is positioned at the standby position in the photoresist coating device (CT) 23a will be described with reference to Figs. 4 to 6. Fig. 4 is a block diagram showing a functional configuration of a photoresist coating device (CT) 23a in a standby state. FIG. 5 is a diagram for explaining a homogenizing process (priming process) of the photoresist φ liquid attached to the front end of the nozzle 51. Fig. 6 is a flowchart showing the steps of Fig. 5. In FIG. 4, after the photoresist film of the substrate G is formed, the nozzle moving means 86 is controlled by the overall control section 85, and the nozzle 51 that has completed the coating operation is moved from the use position to the standby position a, and executed Second coating. A standby position detector 87 composed of a light sensor is provided at the standby position a. When the nozzle 51 is located at the standby position a, a standby position detection signal P1 is generated and input to the entire control unit 85. That is, during the period in which the standby position detection signal P1 is input, -19- 200533428 (16) the entire control unit 85 determines that the nozzle 51 is located in the standby position a and is suitable for a photoresist coating device (CT When the nozzle 51 is in the standby position a, the front end of the nozzle is arranged to contact the peripheral surface of the roller 52 (step S1 in FIG. 6). The distance between the front exit 5 1 a of the nozzle and the bottom roller 5 2 is set to be the same as the distance from the application point. The distance between the exit 5 1 a and the substrate G is the same. That is, the distance is about 40 to 150 μm, and it is more preferably set to 60 μm. φ In addition, the discharge control means (such as an operation valve) of the photoresist liquid supply source 95 will follow the instructions from the overall control unit 85 as shown in FIG. 5 (a). 1 a to spray the peripheral surface of the punch 52 (for example, 0.1 cc of the photoresist liquid R will be ejected in 0.05 sec) of the quantitative photoresist liquid R (example 4cps). At this moment, the bottoming roller 52 is still in a rotation stop state (S step S2). Here, since the photoresist liquid R sprayed from the ejection port 5 1 a will φ hit the peripheral surface of the bottom roller 5 2, the tip of the nozzle 51 will form a state in the photoresist liquid R on the inclined surface. In the lower part of 5 1 c, the light R is sufficiently attached to the entire body at a height of, for example, 10 to 20 μm. Secondly, after the photoresist liquid is ejected from the nozzle 51, if time T (step S3 in FIG. 6) elapses, as shown in FIG. 5 (b), the wheel 52 will start to rotate on one side by the roller rotation control means 92 For example, the roller diameter is 90mm, and the speed is 60mm / sec), so that the photoresist liquid R adhered to the periphery of 5 1 a is uniform (step S 4 in FIG. 6). When the spraying is performed at the bottom end of the approach, the setting is such as that the gas is opened, and the bottom roller is 0.03 ~ When the viscosity of B 6 stays, the resist liquid is impregnated and rolled over the predetermined bottom (for example, the spray outlet is 0 resist liquid-20 -
200533428 (17) R是沿著打底滾輪5 2的旋轉方向而流動，因此附著 嘴5 1前端的光阻劑液R也會以噴出口 5 1 a的長度力 境界來大多附著於打底滾輪5 2的旋轉方向側。特別 打底滾輪5 2的旋轉開始前，噴嘴5 1前端的傾斜面5 下部會形成全體爲光阻劑液R所浸溼的狀態，因此藉 底滾輪5 2的旋轉而流動的光阻劑液R會被捲取於打 輪5 2的周面，同時也容易流入傾斜面5 1 c。藉此在傾 5 1 c的下部，會有一樣多的光阻劑液R附著於打底滾 的旋轉方向側。 如圖5 ( c )所示，若所定量的光阻劑液噴出終了 6的步驟S5)，則如圖5(d)所示，噴嘴51會藉由 移動手段8 6來離開打底滾輪5 2 (圖6的步驟S 6 )。 ，圖6所示的流程並無限定從噴出口 5 1 a噴出光阻劑 的終了時間及打底滾輪52的旋轉開始時間之順序， 是哪一方先皆可。 若利用上述打底處理，則在傾斜面5 1 c的下部， 於打底滾輪5 2的旋轉方向側，如圖7所示，同樣地 有光阻劑液R。利用此狀態的噴嘴5 1來對基板G進 佈處理時，在傾斜面5 1 c的下部，將打底滾輪5 2的 方向側，亦即光阻劑液R更多同樣附著的一側配置於 行進方向的反對側（背側），進行噴嘴5 1的移動。 ，在其塗佈處理開始時，附著於傾斜面5 1 c的下部的 劑液R會將自噴出口 5 1 a噴出的光阻劑液R牽引至噴 進方向的相反方向，且亦牽引至與噴嘴行進方向正交 :於噴 '向爲 是在 1 c的 由打 ‘底滾 :斜面 輪52 (圖 噴嘴 此外 液R 無論 至少 附著 行塗 旋轉 噴嘴 然後 光阻 嘴行 的方 -21 - 200533428 (18) 向（噴嘴長度方向）。因爲光阻劑液R會同樣地附著於該 傾斜面5 1 c的下部，所以如圖8所不’基板G上的塗佈處 理開始位置的膜厚會大致形成均一’可抑止掃帚狀條紋等 的發生。 又，如圖4所示，在本構成中’爲了容易去除附者於 打底滾輪5 2周面的光阻劑液R ’而使打底滾輪5 2的下部 浸漬於溶劑的稀釋劑8 9中。亦即，使附著於打底滾輪5 2 p 周面的光阻劑液能夠在稀釋劑8 9中溶解。 又，於打底滾輪5 2的途中設有刷件9 1。此刷件9 1是 由耐藥性的樹脂所構成，前端會連接於打底滾輪52的周 面，使能夠去除周面上前次旋轉進的不要光阻劑液或稀釋 劑89。 又，刷件9 1的前端形狀只要是能夠發揮其光阻劑液 除去機能即可，除了此例中所使用的楔形剖面以外，亦可 採用矩形剖面或分叉狀的剖面形狀的任意形狀。 φ 又，此刷件9 1可藉由汽缸9 0來升降於和打底滾輪5 2 周面接觸的下位置與離開打底滾輪5 2周面的上位置之間 ，且可因應所需來變更其位置。 若利用以上的實施形態，則於待機中的打底處理中， 會控制成自噴嘴5 1開始噴出光阻劑液R後，隔一所定時 間T，開始旋轉打底滾輪5 2。藉此，形成光阻劑液R會 留於噴嘴5 1前端的狀態，即使在打底處理後，照樣能夠 形成在噴嘴5 1前端的傾斜面5 1 c的下部全體充分地附著 光阻劑液R的狀態。 -22- 200533428 (19) 而且，在打底處理後，利用此噴嘴5 1來對基板G進 行塗佈處理時，在塗佈開始時附者於傾斜面5 1 c下部的光 阻劑液R會將自噴出口 5 1 a噴出的光阻劑液R牽引至噴嘴 行進方向的相反方向，且亦牽引至與噴嘴行進方向正交的 方向（噴嘴長度方向）。因爲光阻劑液R會同樣地附著於 傾斜面5 1 c.的下部全體，所以在塗佈處理開始位置，可使 膜厚形成均一，進而能夠抑止掃帚狀條紋的發生。 _ 又，若利用本實施形態，則在噴嘴5 1前端，會以噴 出口 5 1 a的長度方向爲境界，使更多附著於打底滾輪5 2 的旋轉方向側。而且，在對基板G之光阻劑膜形成處理中 ，控制成以噴出口 5 1 a的長度方向爲境界，光阻劑液較少 附著的一側爲行進方向。亦即，在噴嘴5 1前端的傾斜面 5 1 c的下部，至少打底滾輪5 2的旋轉方向側，光阻劑液R 會同樣地附著，因此在塗佈開始位置，可更確實地使膜厚 形成均一，進而能夠抑止掃帚狀條紋的發生。 ^ 又，上述實施形態中，雖是以在LCD基板塗佈形成 光阻劑膜時爲例，但並非限於此，亦可適用於將處理液供 給至被處理基板上的任意塗佈膜形成裝置。本發明的處理 液’除了光阻劑液以外，例如亦可爲層間絶縁材料，介電 質材料’配線材料等的液體。又，本發明的被處理基板並 非限於L C D，亦可爲半導體晶圓，c D基板，玻璃基板， 光罩，印刷基板等。 〔實施例〕 -23- 200533428 (20) 接著，根據實施例來説明有關本發明的塗佈膜形成裝 置。 〔比較例〕 附著於待機時的噴嘴前端之光阻劑液的均一化處理（ 打底處理）中，從噴嘴開始噴出光阻劑液的時間與打底滾 輪的旋轉開始時間爲同時（以往的時序）進行實驗。此實 驗是首先根據上述以往的時序來進行附著於噴嘴前端的光 阻劑液的均一化處理後，對基板面進行光阻劑膜形成處理 。然後，觀察膜形成狀態，且進行塗佈開始位置之膜厚的 測定。實驗條件爲以下的表1所示。 〔表1〕 1 光阻劑液黏性（cps) 4 2 打底滾輪直徑（mm) 90 3 打底滾輪旋轉速度（mm/sec) 60 4 光阻劑液噴出量（ml ) 0.1 5 從光阻劑被噴出開始到滾輪旋轉開始爲 止的時間T ( sec ) 0200533428 (17) R flows along the rotation direction of the bottom roller 5 2. Therefore, the photoresist liquid R at the front end of the attachment nozzle 5 1 also adheres to the bottom roller with the length of the ejection port 5 1 a. 5 2 rotation direction side. Before the rotation of the bottom roller 5 2 is started, the lower portion of the inclined surface 5 at the front end of the nozzle 5 1 will be wetted by the entire photoresist liquid R. Therefore, the photoresist liquid flowing through the rotation of the bottom roller 5 2 R will be wound around the peripheral surface of the wheel 5 2 and will easily flow into the inclined surface 5 1 c. Thereby, in the lower part of the tilt 5 1 c, as much photoresist liquid R adheres to the rotation direction side of the primer roll. As shown in FIG. 5 (c), if the measured amount of the photoresist liquid is discharged at step S5), as shown in FIG. 5 (d), the nozzle 51 will leave the bottoming roller 5 by moving means 86. 2 (step S 6 in FIG. 6). The sequence shown in FIG. 6 does not limit the order of the end time of the photoresist to be ejected from the ejection port 5 1 a and the start time of the rotation of the bottom roller 52, whichever is the first. According to the above-mentioned priming process, a photoresist liquid R is similarly provided on the lower side of the inclined surface 5 1 c on the rotation direction side of the priming roller 52 as shown in FIG. 7. When using the nozzle 51 in this state to feed the substrate G, the direction of the bottom roller 5 2 is arranged below the inclined surface 5 1 c, that is, the side on which the photoresist liquid R adheres more. The nozzle 51 is moved on the opposite side (back side) of the traveling direction. At the beginning of the coating process, the agent liquid R attached to the lower portion of the inclined surface 5 1 c will pull the photoresist liquid R sprayed from the spray outlet 5 1 a to the direction opposite to the spraying direction, and also to the nozzle. The direction of travel is orthogonal: the direction of the spray is at 1 c. The bottom is rolled: the bevel wheel 52 (the nozzle is in addition to the liquid R. At least the line is coated with a rotating nozzle and then the photoresist nozzle is lined. 21-200533428 (18 ) Direction (nozzle length direction). Since the photoresist liquid R will similarly adhere to the lower part of the inclined surface 5 1 c, the film thickness at the start position of the coating process on the substrate G will be approximately as shown in FIG. 8. Uniformity 'can suppress the occurrence of broom-like streaks and the like. In this configuration, as shown in FIG. 4, in order to easily remove the photoresist liquid R 2 on the peripheral surface of the primer roller 5, the primer roller 5 is used. The lower part of 2 is immersed in the thinner 8 9 of the solvent. That is, the photoresist liquid adhered to the peripheral surface of the primer roller 5 2 p can be dissolved in the diluent 8 9. A brush 9 1 is provided on the way. This brush 9 1 is made of resistant resin, and the front end is connected. On the peripheral surface of the bottoming roller 52, it is possible to remove the photoresist-free liquid or diluent 89 that was rotated in the previous rotation on the peripheral surface. The shape of the tip of the brush 91 may be capable of exhibiting its photo-resist liquid removal function. That is, in addition to the wedge-shaped cross-section used in this example, any shape of a rectangular cross-section or a bifurcated cross-sectional shape can also be adopted. Φ In addition, the brush 9 1 can be raised and lowered by the cylinder 90. The position between the lower surface where the roller 5 2 is in contact with the upper surface and the upper surface where the roller 5 2 is away from the bottom surface, and the position can be changed as required. If the above embodiment is used, it is in the processing of the bottom during standby. Will be controlled so that after the photoresist liquid R starts to be ejected from the nozzle 51, the primer roller 5 2 will be rotated at a predetermined time T. As a result, a state where the photoresist liquid R will remain at the front end of the nozzle 51 is formed. Even after the priming process, the photoresist liquid R can be fully adhered to the entire lower portion of the inclined surface 5 1 c at the front end of the nozzle 51. -22- 200533428 (19) Moreover, after the priming process, When the substrate G is coated with the nozzle 51, the coating At first, the photoresist liquid R attached to the lower part of the inclined surface 5 1 c will pull the photoresist liquid R sprayed from the ejection outlet 5 1 a to the opposite direction of the nozzle traveling direction, and also to the orthogonal direction of the nozzle traveling direction. Direction (nozzle length direction). Since the photoresist liquid R is similarly attached to the entire lower part of the inclined surface 5 1 c., The film thickness can be made uniform at the starting position of the coating process, and the broom-like streak can be suppressed. _ In addition, according to this embodiment, at the front end of the nozzle 5 1, the length direction of the discharge port 5 1 a is taken as the boundary, and more adheres to the rotation direction side of the primer roller 5 2. In the photoresist film formation process for the substrate G, the length direction of the ejection port 5 1 a is used as the boundary, and the side where the photoresist liquid is less adhered is the traveling direction. That is, at the lower part of the inclined surface 5 1 c at the front end of the nozzle 51, at least the rotation direction side of the bottom roller 52, the photoresist liquid R adheres in the same manner. The uniform film thickness can suppress the occurrence of broom-like streaks. ^ In the above embodiment, the photoresist film is formed on the LCD substrate as an example, but it is not limited to this, and it can also be applied to any coating film forming apparatus that supplies a processing liquid to a substrate . In addition to the photoresist liquid, the treatment liquid of the present invention may be a liquid such as an interlayer insulation material, a dielectric material, or a wiring material. The substrate to be processed in the present invention is not limited to L C D, and may be a semiconductor wafer, a C D substrate, a glass substrate, a photomask, a printed substrate, or the like. [Examples] -23- 200533428 (20) Next, a coating film forming apparatus according to the present invention will be described based on examples. [Comparative example] In the homogenization process (priming process) of the photoresist liquid attached to the tip of the nozzle during standby, the time when the photoresist liquid was ejected from the nozzle and the start time of the rotation of the primer roller were the same (conventional Timing). In this experiment, a photoresist film forming process was first performed on the substrate surface after the photoresist liquid was homogenized on the front end of the nozzle according to the conventional sequence described above. Then, the film formation state was observed, and the film thickness at the application start position was measured. The experimental conditions are shown in Table 1 below. [Table 1] 1 Photoresist liquid viscosity (cps) 4 2 Base roller diameter (mm) 90 3 Base roller rotation speed (mm / sec) 60 4 Photoresist liquid ejection amount (ml) 0.1 5 from light Time T (sec) from when the resist is ejected to when the rotation of the roller starts
將此實驗的膜厚測定結果顯示於圖9 ( a )的表及圖 1 0的圖表。該等的結果是分別在圖9 ( b )所示的基板上 的不同位置（Back，l/2Back，Center，l/2Front，Front ) ，沿著噴嘴行進方向來測定基板端部（0 m m )〜1 0 0 m m之 -24- 200533428 (21) 間（塗佈開始位置）的膜厚之結果。 如圖1 〇的圖表所示，若測定位置爲3 0mm以上’則 基板上的各位置間的膜厚大致安定成均一，但若測定位置 爲0〜3 0mm之間，則基板上的各位置間的膜厚會出現不 均。並且，觀察膜形成狀態的結果，在塗佈開始位置’會 出現掃帚狀的條紋或粒狀的痕跡。 〔實施例〕 利用上述實施形態所示構成的光阻劑塗佈裝置來進行 實驗。此實驗，首先是在進行噴嘴前端的光阻劑液均一化 處理之後，對基板面進行光阻劑膜形成處理。然後，觀察 膜形成狀態，且進行進行塗佈開始位置之膜厚的測定。在 此，將實驗條件顯示於以下的表2。 〔表2〕 _1 光阻劑液黏性（c p s ) 4 2 打底滾輪直徑（mm) 90 3 打底滾輪旋轉速度（mm/sec ) 60 4 光阻劑液噴出量（ml ) 0.1 5 從光阻劑被噴出開始到滾輪旋轉開始爲 止的時間T ( sec ) 1 .0The film thickness measurement results of this experiment are shown in the table of FIG. 9 (a) and the graph of FIG. 10. As a result, the end of the substrate (0 mm) was measured at different positions (Back, 1/2/2, Center, 1/2/2 Front, Front) on the substrate shown in FIG. 9 (b) along the nozzle travel direction. Result of film thickness between -24- 200533428 (21) (applying start position) to 100 mm. As shown in the graph of FIG. 10, if the measurement position is 30 mm or more, the film thickness between the positions on the substrate is approximately stable, but if the measurement position is between 0 and 30 mm, the positions on the substrate are uniform. Uneven film thickness may occur. As a result of observing the film formation state, a broom-like streak or grainy trace appeared at the application start position '. [Examples] Experiments were performed using a photoresist coating device having the structure shown in the above embodiment. In this experiment, first, after the photoresist liquid homogenization treatment at the front end of the nozzle is performed, the substrate surface is subjected to a photoresist film formation treatment. Then, the film formation state was observed, and the film thickness at the application start position was measured. The experimental conditions are shown in Table 2 below. [Table 2] _1 Photoresist liquid viscosity (cps) 4 2 Diameter roller diameter (mm) 90 3 Basal roller rotation speed (mm / sec) 60 4 Spray amount of photoresist liquid (ml) 0.1 5 Time T (sec) from the time when the resist is ejected to the start of the rotation of the roller is 1.0
將此實驗的膜厚測定結果顯示於圖11 ( a )的表及圖 1 2的圖表。該等的結果是分別在圖丨1 ( b )所示的基板上 -25- 200533428 (22) 的不同位置（Back，l/2Back’ Center，l/2Fro ，沿著噴嘴行進方向來測定基板端部（0mm )' 間（塗佈開始位置）的膜厚之結果。 如圖1 2的圖表所示，本實驗可確認出在 位置，基板上的各位置間的膜厚大致安定成均 觀察膜形成狀態的結果，在塗佈開始位置，未 的條紋或粒狀的痕跡。 g 由以上實施例的結果可確認出本發明的塗 置及塗佈膜形成方法在將處理液塗佈於基板進 ，可防止噴嘴前端部之處理液的著液不足，而 液均一地塗佈於基板。 〔産業上的利用可能性〕 本發明可適用於在LCD基板或半導體晶 液成膜之塗佈膜形成裝置，亦即可適用於半導 φ ，電子裝置製造業界等。 【圖式簡單說明】 圖1是表示具備本發明的塗佈膜形成裝置 佈裝置）之光阻劑塗佈顯像處理裝置的全體構月 圖2是表示圖1之光阻劑塗佈顯像處理裝 光阻劑塗佈處理單元的平面圖。 圖3是表示構成圖2的光阻劑塗佈處理單 塗佈裝置的外觀立體圖。 n t，Front ) 〜1 0 0 m m之 所有的測定 ~ 0 並且， 發現掃帚狀 佈膜形成裝 行膜形成時 能夠將處理 圓等使處理 體製造業界 (光阻劑塗 ζ平面圖。 置所具備的 元之光阻劑 -26- 200533428 (23) 圖4是表示圖3之光阻劑塗佈裝置的待機狀態下的機 能構成區塊圖。 圖5是用以說明光阻劑塗佈裝置所具備的光阻劑供給 噴嘴的噴出口附近的光阻劑液均一化處理步驟。 圖6是表示圖5的步驟流程。 圖7是用以說明藉圖5的步驟而被均一化處理之噴嘴 前端的狀態之噴嘴前端擴大圖。 g 圖8是用以說明利用藉圖5的步驟而被均一化處理之 光阻劑供給噴嘴來進行塗佈處理的基板狀態的平面圖。 圖9是表示比較例爲利用以往的光阻劑塗佈裝置來進 行光阻劑液的塗佈處理，測定塗佈開始時的膜厚之結果的 表。 圖10是表示使圖9圖表化者。 圖1 1是表示利用圖3及圖4所示構成的光阻劑塗佈 裝置來進行光阻劑液的塗佈處理，測定塗佈開始時的膜厚 φ 之結果的表。 圖12是表示使圖11圖表化者。 圖1 3是用以說明以往的光阻劑供給噴嘴的噴出口附 近的光阻劑液均一化處理。 圖1 4是表示圖1 3所示之噴嘴的前端部的擴大剖面圖 〇 圖15是用以說明以往的均一化處理之噴嘴前端的狀 態之噴嘴前端擴大圖。 圖16是用以說明對基板進行塗佈處理的狀態之噴嘴 -27- 200533428 (24) 前端的擴大剖面圖。 圖1 7是用以在以往的光阻劑塗佈裝置中所發生之光 阻劑液的塗佈開始時的掃帚狀條紋的平面圖。 【主要元件符號說明】 2 3 :光阻劑塗佈處理單元 23 a :光阻劑塗佈裝置（塗佈膜形成裝眞） p 5 1 :光阻劑供給噴嘴（處理液供給噴嘴） 5 1 a :噴出口 5 1 b :下端面 5 1 c :傾斜面 52 :打底滾輪（滾輪） 8 6 :噴嘴移動手段 8 8 :噴出控制手段 92 :滾輪旋轉控制手段 φ 1 00 :光阻劑塗佈顯像處理裝置 G : LCD基板（被處理基板） R :光阻劑液（處理液） -28 -The film thickness measurement results of this experiment are shown in the table of FIG. 11 (a) and the graph of FIG. 12. The results are measured at different positions (Back, l / 2Back 'Center, l / 2Fro) of -25-200533428 (22) on the substrate shown in Fig. 1 (b), and the substrate end is measured along the direction of the nozzle. The result of the film thickness of the part (0mm) '(coating start position). As shown in the graph of Fig. 12, this experiment can confirm that the film thickness between each position on the substrate is approximately stable and the film is observed. As a result of the formation state, there are no streaks or grainy marks at the coating start position. G From the results of the above examples, it can be confirmed that the coating method and the coating film forming method of the present invention apply a processing liquid to a substrate. It can prevent the shortage of the treatment liquid in the front end of the nozzle and uniformly apply the liquid to the substrate. [Industrial application possibility] The present invention can be applied to the formation of a coating film for forming an LCD substrate or a semiconductor crystal liquid. The device can also be applied to the semiconductor φ, the electronic device manufacturing industry, etc. [Simplified illustration of the drawing] FIG. 1 shows a photoresist coating development processing device provided with the coating film forming device cloth device of the present invention. Fig. 2 shows the light of Fig. 1 Plan view of the resist coating processing unit processing apparatus developing agent is applied. Fig. 3 is a perspective view showing an external appearance of a photoresist coating process single coating device constituting Fig. 2. nt, Front) All measurements ~ 100 mm ~ 0 It was also found that when a broom-like cloth film is formed and a film is formed, a processing circle or the like can be used in the manufacturing industry (photoresist coating ζ plan view). Yuanzhi Photoresist-26- 200533428 (23) Fig. 4 is a block diagram showing the functional configuration of the photoresist coating device in Fig. 3 in the standby state. Fig. 5 is a diagram for explaining the photoresist coating device. Photoresist liquid homogenization process steps near the discharge port of the photoresist supply nozzle. Fig. 6 shows the process flow of Fig. 5. Fig. 7 illustrates the front end of the nozzle that is homogenized by the steps of Fig. 5. The enlarged view of the front end of the nozzle in the state. G FIG. 8 is a plan view for explaining the state of the substrate subjected to the coating process by using the photoresist supply nozzle that has been uniformized by the step of FIG. 5. A conventional photoresist coating apparatus performs a coating process of a photoresist solution and measures the film thickness at the start of coating. FIG. 10 is a graph showing FIG. 9. FIG. 3 and 4 photoresist coating device The photoresist liquid coating process is performed, and the result of measuring the film thickness φ at the start of coating is shown in the table. Fig. 12 shows a graph of Fig. 11. Fig. 13 is a view explaining a conventional photoresist supply nozzle. The photoresist liquid is homogenized in the vicinity of the ejection port. Fig. 14 is an enlarged cross-sectional view showing the tip of the nozzle shown in Fig. 13. Fig. 15 is a view illustrating the state of the tip of the nozzle in the conventional homogenization process. An enlarged view of the front end of the nozzle. Fig. 16 is an enlarged cross-sectional view of the front end of the nozzle-27- 200533428 (24) to explain the state of coating the substrate. Fig. 17 is used in a conventional photoresist coating device. A plan view of a broom-like streak at the beginning of the application of the photoresist solution. [Explanation of symbols of main elements] 2 3: Photoresist coating processing unit 23a: Photoresist coating device (coating film forming device)眞) p 5 1: Photoresist supply nozzle (treatment liquid supply nozzle) 5 1 a: Ejection port 5 1 b: Lower end surface 5 1 c: Inclined surface 52: Priming roller (roller) 8 6: Nozzle moving means 8 8: Ejection control means 92: Roller rotation control means φ 1 00: Photoresist coating Development processing device G: LCD substrate (substrate to be processed) R: Photoresist liquid (treatment liquid) -28-